| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Abrupt irreversible transformation of rhombohedral BN to a dense form in uniaxial compression of CVD material
|
Novikov, N.V
|
|
1999
|
8 |
2-5 |
p. 361-363
3 p.
|
article
|
| 2 |
A comparative study of composition, structure and elastic properties of boron nitride films deposited by magnetron and ion beam sputtering
|
Logothetidis, S
|
|
1999
|
8 |
2-5 |
p. 410-414
5 p.
|
article
|
| 3 |
A correlation between the microstructure and optical properties of hydrogenated amorphous carbon films prepared by RF magnetron sputtering
|
Clin, M
|
|
1999
|
8 |
2-5 |
p. 527-531
5 p.
|
article
|
| 4 |
Acoustic wave propagation in free standing CVD diamond: Influence of film quality and temperature
|
Whitfield, Michael D.
|
|
1999
|
8 |
2-5 |
p. 732-737
6 p.
|
article
|
| 5 |
Amorphous nitrogen containing carbon films deposited by plasma assisted chemical vapour deposition
|
Arora, M.K
|
|
1999
|
8 |
2-5 |
p. 623-627
5 p.
|
article
|
| 6 |
Analysis of transient currents due to the electron beam irradiation to boron-doped homoepitaxial diamond films
|
Tomokage, Hajime
|
|
1999
|
8 |
2-5 |
p. 892-896
5 p.
|
article
|
| 7 |
A new method for nucleation enhancement of diamond
|
Avigal, Y
|
|
1999
|
8 |
2-5 |
p. 127-131
5 p.
|
article
|
| 8 |
An investigation of structural defects in diamond films grown at low substrate temperatures
|
Stiegler, J
|
|
1999
|
8 |
2-5 |
p. 651-656
6 p.
|
article
|
| 9 |
An optically activated diamond field effect transistor
|
Lansley, S.P
|
|
1999
|
8 |
2-5 |
p. 946-951
6 p.
|
article
|
| 10 |
Application of aluminum nitride films for electronic devices
|
Belyanin, A.F
|
|
1999
|
8 |
2-5 |
p. 369-372
4 p.
|
article
|
| 11 |
A rectilinear plasma filtering system for vacuum-arc deposition of diamond-like carbon coatings
|
Aksenov, I.I.
|
|
1999
|
8 |
2-5 |
p. 468-471
4 p.
|
article
|
| 12 |
A simple model to describe the anisotropy of diamond polishing
|
van Bouwelen, F.M
|
|
1999
|
8 |
2-5 |
p. 840-844
5 p.
|
article
|
| 13 |
A study of deuterium interaction with diamond (110) single crystal surface by TPD, EELS and LEED
|
Bobrov, K
|
|
1999
|
8 |
2-5 |
p. 705-711
7 p.
|
article
|
| 14 |
A theoretical model of electron emission from amorphous carbon nitride films
|
Xanthakis, J.P
|
|
1999
|
8 |
2-5 |
p. 798-800
3 p.
|
article
|
| 15 |
Back-scattering CARS diagnostics on CVD diamond
|
Bühler, Jürgen
|
|
1999
|
8 |
2-5 |
p. 673-676
4 p.
|
article
|
| 16 |
Behavior of electron emission from phosphorus-doped epitaxial diamond films
|
Kimura, Chiharu
|
|
1999
|
8 |
2-5 |
p. 759-762
4 p.
|
article
|
| 17 |
Binding state transformation in high temperature synthesized CN thin films
|
Yap, Y.K
|
|
1999
|
8 |
2-5 |
p. 614-617
4 p.
|
article
|
| 18 |
Boron carbide thin films deposited by tuned-substrate RF magnetron sputtering
|
Pascual, E
|
|
1999
|
8 |
2-5 |
p. 402-405
4 p.
|
article
|
| 19 |
Carbide contacts on homoepitaxial diamond films
|
Muret, P
|
|
1999
|
8 |
2-5 |
p. 961-965
5 p.
|
article
|
| 20 |
Carbon and carbon nitride planar waveguides on silicon substrates
|
Huttel, I
|
|
1999
|
8 |
2-5 |
p. 628-630
3 p.
|
article
|
| 21 |
Carbon FED requirements — application to a PLD carbon cathode
|
Séméria, M.N
|
|
1999
|
8 |
2-5 |
p. 801-804
4 p.
|
article
|
| 22 |
Carbon nanostructures and diamond growth by HFCVD: role of the substrate preparation and synthesis conditions
|
Bonnot, A.M
|
|
1999
|
8 |
2-5 |
p. 631-635
5 p.
|
article
|
| 23 |
Cathodoluminescence of diamond films grown on pretreated Si (001) substrates by microwave plasma chemical vapour deposition
|
Kim, Do-Geun
|
|
1999
|
8 |
2-5 |
p. 712-716
5 p.
|
article
|
| 24 |
Characterization of ballas diamond depositions
|
Bühlmann, S
|
|
1999
|
8 |
2-5 |
p. 194-201
8 p.
|
article
|
| 25 |
CN x film characterization by surface sensitive methods: XPS and XAES
|
Dementjev, A.P
|
|
1999
|
8 |
2-5 |
p. 601-604
4 p.
|
article
|
| 26 |
Coatings for the protection of diamond in high-temperature environments
|
McGeoch, S.P
|
|
1999
|
8 |
2-5 |
p. 916-919
4 p.
|
article
|
| 27 |
Comparative study of band-A cathodoluminescence and Raman spectroscopy in CVD diamond films
|
Faggio, G
|
|
1999
|
8 |
2-5 |
p. 640-644
5 p.
|
article
|
| 28 |
Comparison of P, N and B additions during CVD diamond deposition
|
Haubner, R
|
|
1999
|
8 |
2-5 |
p. 171-178
8 p.
|
article
|
| 29 |
Conference
|
|
|
1999
|
8 |
2-5 |
p. xvii-xviii
nvt p.
|
article
|
| 30 |
Conference
|
|
|
1999
|
8 |
2-5 |
p. xvi-
1 p.
|
article
|
| 31 |
Confocal micro-Raman scattering and Rutherford backscattering characterization of lattice damage in aluminum implanted 6H–SiC
|
Campos, F.J
|
|
1999
|
8 |
2-5 |
p. 357-360
4 p.
|
article
|
| 32 |
Confocal Raman imaging for the analysis of CVD diamond films
|
Haouni, A
|
|
1999
|
8 |
2-5 |
p. 657-662
6 p.
|
article
|
| 33 |
Contribution of sp3 clusters in films and fibers obtained from camphor
|
Rzepka, E
|
|
1999
|
8 |
2-5 |
p. 481-484
4 p.
|
article
|
| 34 |
Control of ion energy using a screen-grid in an electron cyclotron resonance chemical vapour deposition system
|
Rusli, E
|
|
1999
|
8 |
2-5 |
p. 477-480
4 p.
|
article
|
| 35 |
3C SiC(001) surface structure studied by angular resolved photoelectron spectroscopy and reflectance anisotropy spectroscopy
|
Lübbe, M
|
|
1999
|
8 |
2-5 |
p. 331-334
4 p.
|
article
|
| 36 |
3-D determination of the location and absolute amount of sp2 and sp3 bound carbon and stress components in CVD diamond films using multi-color polarized Raman spectroscopy
|
Mossbrucker, J
|
|
1999
|
8 |
2-5 |
p. 663-667
5 p.
|
article
|
| 37 |
Deposition of carbon nitride films by reactive pulsed-laser ablation at high fluences
|
Zocco, A
|
|
1999
|
8 |
2-5 |
p. 582-585
4 p.
|
article
|
| 38 |
Deposition of titanium oxide and titanium carbide containing thin carbon films in a plasma activated process
|
Stricker, A.
|
|
1999
|
8 |
2-5 |
p. 500-503
4 p.
|
article
|
| 39 |
Diamond-coated tools
|
Faure, C
|
|
1999
|
8 |
2-5 |
p. 830-833
4 p.
|
article
|
| 40 |
Diamond deposition on Ni3Ge single- and polycrystalline substrates
|
Haubner, R.
|
|
1999
|
8 |
2-5 |
p. 246-250
5 p.
|
article
|
| 41 |
Diamond junction FETs based on δ-doped channels
|
Aleksov, A
|
|
1999
|
8 |
2-5 |
p. 941-945
5 p.
|
article
|
| 42 |
Diamond-like carbon: state of the art
|
Grill, Alfred
|
|
1999
|
8 |
2-5 |
p. 428-434
7 p.
|
article
|
| 43 |
Diamond-like two-phonon absorption in hydrogenated amorphous carbon modified with copper
|
Ivanov-Omskii, V.I.
|
|
1999
|
8 |
2-5 |
p. 554-557
4 p.
|
article
|
| 44 |
Diamond MEMS — a new emerging technology
|
Kohn, E
|
|
1999
|
8 |
2-5 |
p. 934-940
7 p.
|
article
|
| 45 |
Diamonds of new alkaline carbonate–graphite HP syntheses: SEM morphology, CCL-SEM and CL spectroscopy studies
|
Litvin, Yu.A
|
|
1999
|
8 |
2-5 |
p. 267-272
6 p.
|
article
|
| 46 |
Diamond tips and cantilevers for the characterization of semiconductor devices
|
Malavé, A
|
|
1999
|
8 |
2-5 |
p. 283-287
5 p.
|
article
|
| 47 |
Early stages of carbon film growth: carbide interface formation on molybdenum
|
Reinke, P
|
|
1999
|
8 |
2-5 |
p. 155-159
5 p.
|
article
|
| 48 |
Editorial
|
|
|
1999
|
8 |
2-5 |
p. xv-
1 p.
|
article
|
| 49 |
Effect of nitrogen incorporation into diamond-like carbon films by ECR-CVD
|
Fung, M.K
|
|
1999
|
8 |
2-5 |
p. 472-476
5 p.
|
article
|
| 50 |
Effect of oxygen on the bias-enhanced nucleation of diamond on silicon
|
Schreck, M
|
|
1999
|
8 |
2-5 |
p. 160-165
6 p.
|
article
|
| 51 |
Effect of Si on the electronic structure of sputter-deposited C films: an electron spectroscopy study
|
Speranza, G
|
|
1999
|
8 |
2-5 |
p. 517-521
5 p.
|
article
|
| 52 |
Effect of surface treatment and back contact material on field emission from tetrahedral amorphous carbon
|
Hart, A
|
|
1999
|
8 |
2-5 |
p. 809-813
5 p.
|
article
|
| 53 |
Effects of post-deposition annealing on different DLC films
|
Wächter, R
|
|
1999
|
8 |
2-5 |
p. 504-509
6 p.
|
article
|
| 54 |
Effects of the pretreatment of a cemented carbide surface on its properties and on the properties of diamond coatings deposited by oxygen–acetylene flame CVD
|
Stankovic, S
|
|
1999
|
8 |
2-5 |
p. 207-210
4 p.
|
article
|
| 55 |
Effects of titanium and aluminum incorporations on the structure of boron nitride thin films
|
Kolitsch, A
|
|
1999
|
8 |
2-5 |
p. 386-390
5 p.
|
article
|
| 56 |
Electrical characterisation of MNOS devices on p-type 6H-SiC
|
Berberich, S
|
|
1999
|
8 |
2-5 |
p. 305-308
4 p.
|
article
|
| 57 |
Electrochemical behavior of synthetic diamond thin film electrodes
|
Perret, A.
|
|
1999
|
8 |
2-5 |
p. 820-823
4 p.
|
article
|
| 58 |
Electron affinity and band bending of single crystal diamond (111) surface
|
Cui, J.B
|
|
1999
|
8 |
2-5 |
p. 748-753
6 p.
|
article
|
| 59 |
Electron emission and NEA from differently terminated, doped and oriented diamond surfaces
|
Diederich, L
|
|
1999
|
8 |
2-5 |
p. 743-747
5 p.
|
article
|
| 60 |
Electron field emission and structural properties of carbon chemically vapor-deposited films
|
Obraztsov, A.N
|
|
1999
|
8 |
2-5 |
p. 814-819
6 p.
|
article
|
| 61 |
Electronic and topographic structure of ta-C, ta-C:N and ta-C:B investigated by scanning tunnelling microscopy
|
Arena, C
|
|
1999
|
8 |
2-5 |
p. 435-439
5 p.
|
article
|
| 62 |
Electronic properties of nanocrystalline BN and AlN films deposited on Si and GaAs—a comparison
|
Szmidt, J
|
|
1999
|
8 |
2-5 |
p. 391-397
7 p.
|
article
|
| 63 |
Ellipsometric study of carbon nitride thin films with and without silicon addition
|
Chen, L.C
|
|
1999
|
8 |
2-5 |
p. 618-622
5 p.
|
article
|
| 64 |
Erosion of free-standing CVD diamond film
|
Kim, J.-H
|
|
1999
|
8 |
2-5 |
p. 865-870
6 p.
|
article
|
| 65 |
Etching process of hydrogenated amorphous carbon (a-C:H) thin films in a dual ECR–r.f. nitrogen plasma
|
Hong, Junegie
|
|
1999
|
8 |
2-5 |
p. 572-576
5 p.
|
article
|
| 66 |
Evaluation of biaxial stress in diamond films
|
Hua Fan, Qi
|
|
1999
|
8 |
2-5 |
p. 645-650
6 p.
|
article
|
| 67 |
Evidence of hydrogen–boron interactions in diamond from deuterium diffusion and infrared spectroscopy experiments
|
Chevallier, J
|
|
1999
|
8 |
2-5 |
p. 278-282
5 p.
|
article
|
| 68 |
Fabrication of aluminium nitride/diamond and gallium nitride/diamond SAW devices
|
Chalker, P.R
|
|
1999
|
8 |
2-5 |
p. 309-313
5 p.
|
article
|
| 69 |
Fabrication of nano-size conic diamond arrays by bias assisted PCVD
|
Jan, Yih-Trong
|
|
1999
|
8 |
2-5 |
p. 772-780
9 p.
|
article
|
| 70 |
Field emission measurements with micrometre resolution on carbon nanostructures
|
Stammler, M
|
|
1999
|
8 |
2-5 |
p. 792-797
6 p.
|
article
|
| 71 |
Fracture and erosion of CVD diamond
|
Telling, R.H
|
|
1999
|
8 |
2-5 |
p. 850-854
5 p.
|
article
|
| 72 |
Free-standing CVD diamond wafers for thermal management by d.c. arc jet technology
|
Gray, K.J
|
|
1999
|
8 |
2-5 |
p. 903-908
6 p.
|
article
|
| 73 |
Grain boundary field electron emission from CVD diamond films
|
Karabutov, A.V
|
|
1999
|
8 |
2-5 |
p. 763-767
5 p.
|
article
|
| 74 |
Growth and erosive wear performance of diamond coatings on WC substrates
|
Amirhaghi, S
|
|
1999
|
8 |
2-5 |
p. 845-849
5 p.
|
article
|
| 75 |
Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and Al x Ga1−x N
|
Hanser, Andrew D
|
|
1999
|
8 |
2-5 |
p. 288-294
7 p.
|
article
|
| 76 |
Growth of GaN on highly mismatched substrate and its application to novel devices
|
Amano, H
|
|
1999
|
8 |
2-5 |
p. 302-304
3 p.
|
article
|
| 77 |
Growth of nanocrystalline diamond films for low field electron emission
|
Proffitt, Simon S
|
|
1999
|
8 |
2-5 |
p. 768-771
4 p.
|
article
|
| 78 |
Haemocompatibility of DLC and TiC–TiN interlayers on titanium
|
Jones, M.I
|
|
1999
|
8 |
2-5 |
p. 457-462
6 p.
|
article
|
| 79 |
Highly-efficient flat electron emitter of single-crystalline CVD diamond
|
Nishimura, M
|
|
1999
|
8 |
2-5 |
p. 754-758
5 p.
|
article
|
| 80 |
High nucleation rate in pure SiC nanometric powder by a combination of room temperature plasmas and post-thermal treatments
|
Viera, G
|
|
1999
|
8 |
2-5 |
p. 364-368
5 p.
|
article
|
| 81 |
High-preformance diamond surface-channel field-effect transistors and their operation mechanism
|
Tsugawa, K
|
|
1999
|
8 |
2-5 |
p. 927-933
7 p.
|
article
|
| 82 |
High quality textured growth of oriented diamond thin films on Si (100) in a hot filament-CVD system
|
Janischowsky, K
|
|
1999
|
8 |
2-5 |
p. 179-184
6 p.
|
article
|
| 83 |
High-resolution electron microscopy and electron spin resonance studies on cubic boron nitride crystals made by high-pressure/high-temperature synthesis
|
Nistor, L
|
|
1999
|
8 |
2-5 |
p. 738-742
5 p.
|
article
|
| 84 |
HREM study of ultra-thin, amorphous carbon films and structural changes of carbon forms to diamond under ion bombardment
|
Komninou, Ph
|
|
1999
|
8 |
2-5 |
p. 688-692
5 p.
|
article
|
| 85 |
Index
|
|
|
1999
|
8 |
2-5 |
p. 973-977
5 p.
|
article
|
| 86 |
Index
|
|
|
1999
|
8 |
2-5 |
p. 978-992
15 p.
|
article
|
| 87 |
Influence of substrate nature on the d.c.-glow discharge induced nucleation of diamond
|
Gouzman, I.
|
|
1999
|
8 |
2-5 |
p. 132-138
7 p.
|
article
|
| 88 |
Infrared and Raman analysis of plasma CVD boron nitride thin films
|
Ben el Mekki, M
|
|
1999
|
8 |
2-5 |
p. 398-401
4 p.
|
article
|
| 89 |
Input power dependence of growth rate and quality of diamond films deposited in a d.c. arcjet system
|
Tang, W.Z.
|
|
1999
|
8 |
2-5 |
p. 211-214
4 p.
|
article
|
| 90 |
In situ measurements of methane and acetylene concentrations in a CVD reactor by infrared spectroscopy
|
Morell, G
|
|
1999
|
8 |
2-5 |
p. 166-170
5 p.
|
article
|
| 91 |
Instantaneous annealing of CVD diamond during high dose-rate ion implantation
|
Kalish, R
|
|
1999
|
8 |
2-5 |
p. 877-881
5 p.
|
article
|
| 92 |
Inversion domains generated at substrate steps in GaN/(0001) Al2O3 layers
|
Barbaray, B
|
|
1999
|
8 |
2-5 |
p. 314-318
5 p.
|
article
|
| 93 |
Investigation of plasma jet gas-dynamic effect on a substrate in conditions of diamond coating synthesis
|
Vasil'ev, V.V
|
|
1999
|
8 |
2-5 |
p. 202-206
5 p.
|
article
|
| 94 |
Investigation of the chemical reactivity and stability of c-BNP
|
Sachdev, H.
|
|
1999
|
8 |
2-5 |
p. 319-324
6 p.
|
article
|
| 95 |
Investigation of ultrathin DLC film growth by a novel X-ray reflectivity technique and in situ ellipsometry
|
Kondrashov, P.E.
|
|
1999
|
8 |
2-5 |
p. 532-537
6 p.
|
article
|
| 96 |
Ion implantation post-processing of amorphous carbon films
|
Ager III, J.W
|
|
1999
|
8 |
2-5 |
p. 451-456
6 p.
|
article
|
| 97 |
Laser approaches for deposition of carbon nitride films — chemical vapour deposition and ablation
|
Popov, C
|
|
1999
|
8 |
2-5 |
p. 577-581
5 p.
|
article
|
| 98 |
Manufacture and performance of diamond-coated thermocouples
|
Smith, N.P
|
|
1999
|
8 |
2-5 |
p. 956-960
5 p.
|
article
|
| 99 |
Mapping of 6H-SiC for implantation control
|
Morvan, E
|
|
1999
|
8 |
2-5 |
p. 335-340
6 p.
|
article
|
| 100 |
Mechanical and tribological properties of diamond-like carbon coatings films deposited from an electron cyclotron resonance plasma
|
Racine, B
|
|
1999
|
8 |
2-5 |
p. 567-571
5 p.
|
article
|
| 101 |
Mechanism of diamond nucleation enhancement by electron emission via hot filament chemical vapor deposition
|
Wang, W.L
|
|
1999
|
8 |
2-5 |
p. 123-126
4 p.
|
article
|
| 102 |
Micromechanical properties of BN and B–C–N coatings obtained by r.f. plasma-assisted CVD
|
Polo, M.C
|
|
1999
|
8 |
2-5 |
p. 423-427
5 p.
|
article
|
| 103 |
Microscopic measurements of the electrical properties of highly oriented B-doped diamond films: influence of grain boundaries
|
Steinbach, D
|
|
1999
|
8 |
2-5 |
p. 273-277
5 p.
|
article
|
| 104 |
Microstructure and mechanical properties of pulsed laser deposited boron nitride films
|
Weissmantel, Steffen
|
|
1999
|
8 |
2-5 |
p. 377-381
5 p.
|
article
|
| 105 |
Microstructure of c-BN thin films deposited on diamond films
|
Pascallon, J.
|
|
1999
|
8 |
2-5 |
p. 325-330
6 p.
|
article
|
| 106 |
Modelling of the gas phase chemistry during diamond CVD: the role of different hydrocarbon species
|
Tsang, R.S
|
|
1999
|
8 |
2-5 |
p. 242-245
4 p.
|
article
|
| 107 |
Molecular beam mass spectrometry studies of nitrogen additions to the gas phase during microwave-plasma-assisted chemical vapour deposition of diamond
|
Leeds, S.M
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Morphology and Raman spectra of diamond films grown with a plasma torch
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1999
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article
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Nano-carbon nitride synthesis from a bio-molecular target for ion beam sputtering at low temperature
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Wu, J.-J
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1999
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article
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Nanocrystalline C–BN synthesized by mechanical alloying
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Zhang, Y.F
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1999
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article
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Nanoindentation and nanoscratching studies of amorphous carbon films
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Charitidis, C
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article
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Nano-particles seeding and its characterization by X-ray photoelectron spectroscopy (XPS)
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Eliyahu, A
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1999
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article
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Negative electron affinity of cubic boron nitride
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Loh, Kian Ping
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1999
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Non-stoichiometry of composition and dissolution of oxygen in the cubic boron nitride crystal lattice
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Bezhenar, M
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1999
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Nucleation of c-BN on various substrate materials under high-pressure–high-temperature conditions
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Lux, B
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1999
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Optical and electrical properties of a-C:H deposited by magnetic confinement of r.f. PECVD plasma
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Tomozeiu, N
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1999
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article
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Optical observation of bonded and quasi-free hydrogen in diamond-like carbon
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Ivanov-Omskii, V.I
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1999
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article
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Optical properties and new carbon forms of sputtered amorphous carbon films
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Gioti, M
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1999
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article
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Optical-quality diamond growth from CO2-containing gas chemistries
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Mollart, T.P
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1999
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8 |
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article
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| 120 |
Optical reflectivity studies of GaN and AlN chemical beam epitaxy on GaAs(100)
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Chalker, P.R
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1999
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8 |
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article
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| 121 |
Optimising the electronic and optoelectronic properties of thin-film diamond
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Gaudin, Olivier
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1999
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8 |
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article
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| 122 |
Photoconductivity and recombination in diamond-like carbon
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Ilie, A.
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1999
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8 |
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article
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| 123 |
Photocurrent and optical absorption spectroscopic study of n-type phosphorus-doped CVD diamond
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Nesládek, M
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1999
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8 |
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article
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Photoionization cross-section of dominant defects in CVD diamond
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Rosa, J
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1999
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article
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| 125 |
Photoluminescence excitation and quenching spectra in CVD diamond films
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Iakoubovskii, K
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1999
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8 |
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article
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| 126 |
Plasma chemistry of an expanding Ar/C2H2 plasma used for fast deposition of a-C:H
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van de Sanden, M.C.M
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1999
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8 |
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article
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| 127 |
Preparation and wear behaviour of woodworking tools coated with superhard layers
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Endler, I
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1999
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article
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| 128 |
Progress towards high power thin film diamond transistors
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Looi, Hui Jin
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1999
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8 |
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p. 966-971
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article
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| 129 |
Properties of amorphous a-CH(:N) films synthesized by direct ion beam deposition and plasma-assisted chemical vapour deposition
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Lenardi, C
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1999
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8 |
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6 p.
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article
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| 130 |
Properties of large single crystal diamond
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Linares, Robert
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1999
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8 |
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p. 909-915
7 p.
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article
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| 131 |
Pulsed laser surface modifications of diamond thin films
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Cappelli, E.
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1999
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8 |
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p. 257-261
5 p.
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article
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| 132 |
Quality of diamond wafers grown by microwave plasma CVD: effects of gas flow rate
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Ralchenko, V
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1999
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8 |
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5 p.
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article
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| 133 |
Radiation-activated development of defective structure in type Ia diamond
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Ositinskaya, T.D
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1999
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8 |
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article
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| 134 |
Raman spectroscopy and scanning electron microscopy investigation of annealed amorphous carbon–germanium films deposited by d.c. magnetron sputtering
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Mariotto, G
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1999
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8 |
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article
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| 135 |
Reaction of palladium thin films with an Si-rich 6H-SiC(0001)(3×3) surface
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Veuillen, J.Y
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1999
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8 |
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article
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| 136 |
Reflection high-energy electron diffraction and low energy electron diffraction studies of the homoepitaxially grown diamond (111) and (001) surfaces
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Nishitani-Gamo, Mikka
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1999
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8 |
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p. 693-700
8 p.
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article
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| 137 |
RHEED and AFM studies of homoepitaxial diamond thin film on C(001) substrate produced by microwave plasma CVD
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Takami, T
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1999
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8 |
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p. 701-704
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article
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| 138 |
Semiconducting carbon films from a natural source: camphor
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Sharon, Maheshwar
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1999
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8 |
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article
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| 139 |
Semitransparent CVD diamond detectors for in situ synchrotron radiation beam monitoring
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Bergonzo, P.
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1999
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8 |
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7 p.
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article
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Sonoelectrochemistry at tungsten-supported boron-doped CVD diamond electrodes
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Goeting, Christiaan H
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1999
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article
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| 141 |
Status of SiC power devices at Northrop Grumman
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Agarwal, A.K
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1999
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8 |
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article
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| 142 |
Structural and compositional characterization of 6H–SiC implanted with N+ and Al+ ions using optical methods
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Pezoldt, J
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1999
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8 |
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6 p.
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article
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| 143 |
Structural and electronic properties of highly photoconductive amorphous carbon nitride
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Iwasaki, T
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1999
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8 |
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article
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| 144 |
Studies on structural properties of a-CN:H films prepared in electron cyclotron resonance plasma
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Bhattacharyya, S
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1999
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8 |
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5 p.
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article
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| 145 |
Study of diamond films grown at low temperatures and pressures by ECR-assisted CVD
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Gupta, S
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1999
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8 |
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4 p.
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article
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| 146 |
Study of the wear behavior and adhesion of diamond films deposited on steel substrates by use of a Cr–N interlayer
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Glozman, O
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1999
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8 |
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6 p.
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article
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| 147 |
Substrate temperature effects on the microhardness and adhesion of diamond-like thin films
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Martinez, E
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1999
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article
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| 148 |
Surface carbon saturation as a means of CVD diamond nucleation enhancement
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Shima Edelstein, R
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1999
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8 |
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7 p.
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article
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| 149 |
Surface properties of nanodiamond films deposited by electrophoresis on Si(100)
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Maillard-Schaller, E.
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1999
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4 p.
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article
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Surface quality and composition dependence of absolute quantum photoyield of CVD diamond films
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Laikhtman, A.
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1999
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8 |
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article
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| 151 |
Synthesis and purification of multi-walled carbon nanotubes for field emitter applications
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Yumura, M
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1999
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8 |
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7 p.
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article
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| 152 |
Synthesis of adhesive c-BN films in pure nitrogen radio-frequency plasma
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Yap, Y.K
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1999
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8 |
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p. 382-385
4 p.
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article
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| 153 |
Temperature behavior of the 6H-SiC pn diodes
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Badila, M
|
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1999
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8 |
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5 p.
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article
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| 154 |
The effect of nitrogen on the growth, morphology, and crystalline quality of MPACVD diamond films
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Asmussen, J
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1999
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8 |
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6 p.
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article
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| 155 |
The effect of refractive index on the friction coefficient of DLC coated polymer substrates
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Donnelly, K.
|
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1999
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3 p.
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article
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| 156 |
The effects of substrate temperature and laser wavelength on the formation of carbon thin films by pulsed laser deposition
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Yoshitake, Tsuyoshi
|
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1999
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8 |
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5 p.
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article
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| 157 |
The kinetics of sputtered deposited carbon on silicon: a phenomenological model
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Galdikas, A.
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1999
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8 |
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p. 490-494
5 p.
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article
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| 158 |
The preparation of high quality oriented diamond thin films via low temperature and hydrogen ion etched nucleation
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Gu, Changzhi
|
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1999
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8 |
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5 p.
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article
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| 159 |
Thermal annealing behaviour of alloyed DLC films on steel: Determination and modelling of mechanical properties
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Michler, J
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1999
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8 |
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p. 510-516
7 p.
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article
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| 160 |
The role of nitrogen in the deposition of polycrystalline diamond films
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Zhang, Qing
|
|
1999
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8 |
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p. 215-219
5 p.
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article
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| 161 |
The subimplantation model for diamond-like carbon films deposited by methane gas decomposition
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Lacerda, R.G.
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|
1999
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8 |
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5 p.
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article
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| 162 |
Thin film diamond alpha detectors for dosimetry applications
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Bergonzo, P
|
|
1999
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8 |
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p. 952-955
4 p.
|
article
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| 163 |
Three-dimensional diamond growth film simulations: correlations between nucleation and surface parameters
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Barrat, S
|
|
1999
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8 |
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p. 150-154
5 p.
|
article
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| 164 |
Transient photoresponse of CVD diamond-based detectors in the time domain 10−9 s–103 s
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Salvatori, S
|
|
1999
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8 |
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p. 871-876
6 p.
|
article
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| 165 |
UHREM investigation of stacking fault interactions in the CVD diamond structure
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Delclos, S
|
|
1999
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8 |
2-5 |
p. 682-687
6 p.
|
article
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| 166 |
Ultramicrohardness cross-profiling of CVD diamond/steel brazed junctions
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Fernandes, A.J.S
|
|
1999
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8 |
2-5 |
p. 855-858
4 p.
|
article
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| 167 |
Ultraviolet Raman characterisation of diamond-like carbon films
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Adamopoulos, G
|
|
1999
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8 |
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p. 541-544
4 p.
|
article
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| 168 |
Using fluorine and chlorine in the diamond CVD process
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Schmidt, Ingo
|
|
1999
|
8 |
2-5 |
p. 231-235
5 p.
|
article
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| 169 |
Variations of morphology and electrical property of diamond with doping using diborane in a methane–hydrogen gas mixture
|
Lee, Bum-Joo
|
|
1999
|
8 |
2-5 |
p. 251-256
6 p.
|
article
|
| 170 |
XPS spectra of thin CN x films prepared by chemical vapor deposition
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Beshkov, G
|
|
1999
|
8 |
2-5 |
p. 591-594
4 p.
|
article
|
Journal description