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                             80 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Aluminium implantation of p-SiC for ohmic contacts Spieβ, L.
 1997
 6 10 p. 1414-1419
6 p.
 artikel
2 Amorphous GaAs1 − x N x thin films on crystalline Si substrates: growth and characterizations Lollman, Dave
 1997
 6 10 p. 1568-1571
4 p.
 artikel
3 Analysis of transport properties of β-SiC films: determination of donor density and compensation ratio Contreras, S.
 1997
 6 10 p. 1329-1332
4 p.
 artikel
4 Angle resolved photoemission and the band structure of 6H-SiC Hollering, M.
 1997
 6 10 p. 1358-1361
4 p.
 artikel
5 An interface study of vapor-deposited rhenium with the two (0001) polar faces of single crystal 6H-SiC Kennou, S.
 1997
 6 10 p. 1424-1427
4 p.
 artikel
6 Anisotropic oxidation of silicon carbide Christiansen, Kai
 1997
 6 10 p. 1467-1471
5 p.
 artikel
7 Author index for volume 6 1997
 6 10 p. 1575-1580
6 p.
 artikel
8 “Carbon cluster model” for electronic states at SiC SiO2 interfaces Bassler, M.
 1997
 6 10 p. 1472-1475
4 p.
 artikel
9 Carrier lifetimes in SiC, studied by time resolved photoluminescence spectroscopy Bergman, J.P.
 1997
 6 10 p. 1324-1328
5 p.
 artikel
10 Characterization of electrically active deep level defects in 4H and 6H SiC Doyle, J.P.
 1997
 6 10 p. 1388-1391
4 p.
 artikel
11 Chemical conversion of Si to SiC by solid source MBE and RTCVD Pezoldt, J.
 1997
 6 10 p. 1311-1315
5 p.
 artikel
12 Colour sensing applications of hydrogenated amorphous silicon carbide Müller, Gerhard
 1997
 6 10 p. 1542-1546
5 p.
 artikel
13 Comparative investigation of ECR-RIE patterns on Si and C faces of 6H-SiC using a CF 4 O2 gas mixture Bonnot, R.
 1997
 6 10 p. 1463-1466
4 p.
 artikel
14 Conference calendar 1997
 6 10 p. 1573-1574
2 p.
 artikel
15 Contactless characterisation of 2D-electrons in GaN/AlGaN HFETs Alause, H.
 1997
 6 10 p. 1536-1538
3 p.
 artikel
16 Deep luminescent centres in electron-irradiated 6H SiC Son, N.T.
 1997
 6 10 p. 1378-1380
3 p.
 artikel
17 Defects formation in sublimation grown 6H-SiC single crystal boules Madar, R.
 1997
 6 10 p. 1249-1261
13 p.
 artikel
18 Effects of thermal and laser annealing on silicon carbide nanopowder produced in radio frequency glow discharge Viera, G.
 1997
 6 10 p. 1559-1563
5 p.
 artikel
19 Electrical properties of PECVD amorphous silicon—carbon alloys from amorphous—crystalline heterojunctions Marsal, L.F.
 1997
 6 10 p. 1555-1558
4 p.
 artikel
20 Emission and excitation spectra of silicon-related luminescent centers in CVD-grown diamond films Rossi, M.C.
 1997
 6 10 p. 1564-1567
4 p.
 artikel
21 Fabrication of high-quality oxides on SiC by remote PECVD Gölz, A.
 1997
 6 10 p. 1420-1423
4 p.
 artikel
22 Growth and doping via gas-source molecular beam epitaxy of SiC and SiC AlN heterostructures and their microstructural and electrical characterization Kern, R.S.
 1997
 6 10 p. 1282-1288
7 p.
 artikel
23 Growth of SiC films obtained by LPCVD Clavaguera-Mora, M.T.
 1997
 6 10 p. 1306-1310
5 p.
 artikel
24 Growth of SiC from the liquid phase: wetting and dissolution of SiC Syväjärvi, M.
 1997
 6 10 p. 1266-1268
3 p.
 artikel
25 Growth-related structural defects in seeded sublimation-grown SiC Tuominen, M.
 1997
 6 10 p. 1272-1275
4 p.
 artikel
26 Hafnium, cadmium and indium impurities in 4H-SiC observed by perturbed angular correlation spectroscopy Licht, T.
 1997
 6 10 p. 1436-1439
4 p.
 artikel
27 Hexagonal and cubic SiC thin films on SiC deposited by solid source MBE Fissel, Andreas
 1997
 6 10 p. 1316-1320
5 p.
 artikel
28 High field and high temperature stress of n-SiC MOS capacitors Bano, E.
 1997
 6 10 p. 1489-1493
5 p.
 artikel
29 High field/high temperature performance of semi-insulating silicon carbide Sudarshan, T.S.
 1997
 6 10 p. 1392-1395
4 p.
 artikel
30 High quality 4H-SiC grown on various substrate orientations Henry, A.
 1997
 6 10 p. 1289-1292
4 p.
 artikel
31 Hydrogen-, boron-, and hydrogen-boron-related low temperature photoluminescence of 6H-SiC Peppermüller, C.
 1997
 6 10 p. 1321-1323
3 p.
 artikel
32 Hydrogen incorporation in epitaxial layers of 4H- and 6H-silicon carbide grown by vapor phase epitaxy Schöner, Adolf
 1997
 6 10 p. 1293-1296
4 p.
 artikel
33 Identification of the cubic and hexagonal polytypes of GaN with X-ray absorption measurements Katsikini, M.
 1997
 6 10 p. 1539-1541
3 p.
 artikel
34 Investigation of modified 3C SiC(100) surfaces by surface-sensitive techniques Balster, T.
 1997
 6 10 p. 1353-1357
5 p.
 artikel
35 Investigation of the effects of high temperature implantation and post implantation annealing on the electrical behavior of nitrogen implanted β-SiC films Reichert, W.
 1997
 6 10 p. 1445-1447
3 p.
 artikel
36 Investigation of walk-out phenomena in SiC mesa diodes with SiO 2 Si3N4 passivation Ovuka, Zoran
 1997
 6 10 p. 1476-1479
4 p.
 artikel
37 Ion beam assisted deposition of a tungsten compound layer on 6H-silicon carbide Weishart, H.
 1997
 6 10 p. 1432-1435
4 p.
 artikel
38 2.5 kV ion-implanted p + n diodes in 6H-SiC Rottner, K.H.
 1997
 6 10 p. 1485-1488
4 p.
 artikel
39 Low frequency noise in silicon carbide Schottky diodes Anghel, L.
 1997
 6 10 p. 1494-1496
3 p.
 artikel
40 Micropipe defects and voids at β-SiC/Si(100) interfaces Scholz, R.
 1997
 6 10 p. 1365-1368
4 p.
 artikel
41 Microwave power MESFET on 4H-SiC Noblanc, O.
 1997
 6 10 p. 1508-1511
4 p.
 artikel
42 Nonlinear optical mapping of 3C-inclusions in 6H-SiC-epilayers Meyer, C.
 1997
 6 10 p. 1374-1377
4 p.
 artikel
43 Nuclear transmutation doping of 6H-silicon carbide with phosphorous Heissenstein, Hans
 1997
 6 10 p. 1440-1444
5 p.
 artikel
44 Numerical study of avalanche breakdown of 6H-SiC planar p-n junctions Stefanov, E.
 1997
 6 10 p. 1500-1503
4 p.
 artikel
45 OBIC studies on 6H-SiC Schottky rectifiers with different surface pretreatments Frischholz, Manfred
 1997
 6 10 p. 1396-1399
4 p.
 artikel
46 Optical investigation of thick 3CSiC layers deposited on bulk silicon by CVD Bluet, J.M.
 1997
 6 10 p. 1385-1387
3 p.
 artikel
47 Optically detected magnetic resonance studies of defects in 3C SiC epitaxial layers Son, N.T.
 1997
 6 10 p. 1381-1384
4 p.
 artikel
48 Optical study of boron nitride thin films prepared by plasma-enhanced chemical vapor deposition Polo, M.C.
 1997
 6 10 p. 1550-1554
5 p.
 artikel
49 Organizers and sponsors of ECSCRM 1996 1997
 6 10 p. xliii-
1 p.
 artikel
50 Overview of SiC power electronics Chelnokov, V.E.
 1997
 6 10 p. 1480-1484
5 p.
 artikel
51 Passivation of interface traps in MOS-devices on n- and p-type 6H-SiC Stein von Kamienski, E.G.
 1997
 6 10 p. 1497-1499
3 p.
 artikel
52 Polytypism and surface structure of SiC Käckell, P.
 1997
 6 10 p. 1346-1348
3 p.
 artikel
53 Preface Zekentes, Konstantinos
 1997
 6 10 p. xli-
1 p.
 artikel
54 Preferential etching of SiC crystals Yakimova, R.
 1997
 6 10 p. 1456-1458
3 p.
 artikel
55 Progress in the study of optical and related properties of SiC since 1992 Choyke, W.J.
 1997
 6 10 p. 1243-1248
6 p.
 artikel
56 Radiation-induced defect centers in 4H silicon carbide Dalibor, Thomas
 1997
 6 10 p. 1333-1337
5 p.
 artikel
57 Residual strains in GaN grown on 6H-SiC Nikitina, I.P.
 1997
 6 10 p. 1524-1527
4 p.
 artikel
58 Schottky contact investigation on reactive ion etched 6H α-SiC Constantinidis, G.
 1997
 6 10 p. 1459-1462
4 p.
 artikel
59 SiC and group III nitride growth in MOVPE production reactors Beccard, R.
 1997
 6 10 p. 1301-1305
5 p.
 artikel
60 SiC device technology: remaining issues Palmour, J.W.
 1997
 6 10 p. 1400-1404
5 p.
 artikel
61 β-SiC films on SOI substrates for high temperature applications Reichert, W.
 1997
 6 10 p. 1448-1450
3 p.
 artikel
62 Silicon carbide for microwave power applications Brylinski, Christian
 1997
 6 10 p. 1405-1413
9 p.
 artikel
63 Structural and electrical properties of Schottky barriers on n-GaN Kalinina, E.V.
 1997
 6 10 p. 1528-1531
4 p.
 artikel
64 Structural properties of GaN grown on SiC substrates by hydride vapor phase epitaxy Melnik, Yu.V.
 1997
 6 10 p. 1532-1535
4 p.
 artikel
65 Structure and morphology of SiC surfaces studied by LEED, AES, HREELS and STM Starke, U.
 1997
 6 10 p. 1349-1352
4 p.
 artikel
66 Subject index 1997
 6 10 p. 1581-1586
6 p.
 artikel
67 Sublimation growth of 4H- and 6H-SiC boule crystals Heydemann, V.D.
 1997
 6 10 p. 1262-1265
4 p.
 artikel
68 Surface and bulk effects in ex-situ hydrogenated α-SiC thin films Kalomiros, J.
 1997
 6 10 p. 1547-1549
3 p.
 artikel
69 Surface chemistry of 6H-SiC(000 1 ) after reactive ion etching Sieber, N.
 1997
 6 10 p. 1451-1455
5 p.
 artikel
70 Surface polarity dependence in step-controlled epitaxy: progress in SiC epitaxy Matsunami, Hiroyuki
 1997
 6 10 p. 1276-1281
6 p.
 artikel
71 Temperature dependence of electrical properties of 6H-SiC buried gate JFET Raynaud, C.
 1997
 6 10 p. 1504-1507
4 p.
 artikel
72 TEM study of Ni and Ni2Si ohmic contacts to SiC Pécz, B.
 1997
 6 10 p. 1428-1431
4 p.
 artikel
73 The kinetic growth model applied to micropipes in 6H-SiC Heindl, J.
 1997
 6 10 p. 1269-1271
3 p.
 artikel
74 The origin of 3C polytype inclusions in epitaxial layers of silicon carbide grown by chemical vapour deposition Hallin, C.
 1997
 6 10 p. 1297-1300
4 p.
 artikel
75 The potential of SiC and GaN for application in high speed devices Schwierz, F.
 1997
 6 10 p. 1512-1514
3 p.
 artikel
76 Thermal properties of β-SiC epitaxial layers between 150 °C and 500 °C measured by using microstructures Wagner, C.
 1997
 6 10 p. 1338-1341
4 p.
 artikel
77 Thermodynamics and high-Pressure growth of (Al, Ga, In)N single crystals Krukowski, S.
 1997
 6 10 p. 1515-1523
9 p.
 artikel
78 Topology of twin junctions in epitaxial β-SiC Papaioannou, V.
 1997
 6 10 p. 1362-1364
3 p.
 artikel
79 Valence band dispersion of hexagonal SiC Wellenhofer, G.
 1997
 6 10 p. 1342-1345
4 p.
 artikel
80 Wafer warpage, crystal bending and interface properties of 4H-SiC epi-wafers Ellison, A.
 1997
 6 10 p. 1369-1373
5 p.
 artikel
                             80 gevonden resultaten
 
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