| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
AFM study on the non-monotonic texture evolution of heteroepitaxially nucleated diamond films
|
Klarmann, R.
|
|
1996
|
5 |
3-5 |
p. 266-271
|
article
|
| 2 |
An FTIR study of the heteroepitaxy of diamond on silicon
|
John, P.
|
|
1996
|
5 |
3-5 |
p. 256-260
|
article
|
| 3 |
Application of diamond-like carbon films as hermetic coatings on optical fibres
|
Dowling, D.P.
|
|
1996
|
5 |
3-5 |
p. 492-495
|
article
|
| 4 |
Author index for volume 5
|
|
|
1996
|
5 |
3-5 |
p. xxi-xxiii
|
article
|
| 5 |
Bias-enhanced diamond nucleation on silicon—a TEM study
|
Wurzinger, P.
|
|
1996
|
5 |
3-5 |
p. 345-349
|
article
|
| 6 |
C:N and C:N:O films: preparation and properties
|
Vorli´cˇek, V.
|
|
1996
|
5 |
3-5 |
p. 570-574
|
article
|
| 7 |
Committees
|
|
|
1996
|
5 |
3-5 |
p. xvii
|
article
|
| 8 |
Comparison of diamond-like carbon films deposited from 40 kHz and 13.56 MHz r.f. plasmas
|
Donnelly, K.
|
|
1996
|
5 |
3-5 |
p. 445-447
|
article
|
| 9 |
Conference calendar
|
|
|
1996
|
5 |
3-5 |
p. xix
|
article
|
| 10 |
Control of an MPACVD reactor for polycrystalline textured diamond films synthesis: role of microwave power density
|
Silva, F.
|
|
1996
|
5 |
3-5 |
p. 338-344
|
article
|
| 11 |
Correlation between microstructure and collisional effects in cubic boron nitride synthethized using IBAD
|
Sene´, G.
|
|
1996
|
5 |
3-5 |
p. 530-534
|
article
|
| 12 |
Deposition mechanism of cubic boron nitride
|
Robertson, J.
|
|
1996
|
5 |
3-5 |
p. 519-524
|
article
|
| 13 |
Deposition of a-C:H films from argon/cyclohexane plasma on polymer substrates
|
Fedoseev, D.V.
|
|
1996
|
5 |
3-5 |
p. 429-432
|
article
|
| 14 |
Deposition of heteroepitaxial diamond films on 2 in silicon substrates
|
Jiang, X.
|
|
1996
|
5 |
3-5 |
p. 251-255
|
article
|
| 15 |
Deposition of metal-containing diamond-like carbon films from metal—organic precursors using a plasma activated r.f. process
|
Luithardt, W.
|
|
1996
|
5 |
3-5 |
p. 415-419
|
article
|
| 16 |
Diamond deposition by coiled and grid filaments using high methane concentrations
|
Li, D.M.
|
|
1996
|
5 |
3-5 |
p. 350-353
|
article
|
| 17 |
Diamond growth during bias pre-treatment in the microwave CVD of diamond
|
Sto¨ckel, R.
|
|
1996
|
5 |
3-5 |
p. 321-325
|
article
|
| 18 |
Diamond nucleation and growth on different cutting tool materials: influence of substrate pre-treatments
|
Cappelli, E.
|
|
1996
|
5 |
3-5 |
p. 292-298
|
article
|
| 19 |
Dopant incorporation mechanisms during the growth of thin film diamond
|
Jackman, Richard B.
|
|
1996
|
5 |
3-5 |
p. 378-382
|
article
|
| 20 |
Electron energy loss spectroscopy of amorphous carbon nitride
|
Gilkes, K.W.R.
|
|
1996
|
5 |
3-5 |
p. 560-563
|
article
|
| 21 |
Evolution of the deposited carbon during diamond thin film synthesis evidenced by in-situ optical studies
|
Moulin, S.
|
|
1996
|
5 |
3-5 |
p. 247-250
|
article
|
| 22 |
Formation and characterization of SiC-Si heterojunction by carbon implantation with a MEVVA ion source
|
Yan, H.
|
|
1996
|
5 |
3-5 |
p. 556-559
|
article
|
| 23 |
Formation of crystalline silicon carbon nitride films by microwave plasma-enhanced chemical vapor deposition
|
Chen, L.C.
|
|
1996
|
5 |
3-5 |
p. 514-518
|
article
|
| 24 |
Gas-phase concentration measurements and diamond film composition from chlorine assisted CVD
|
Tsang, R.S.
|
|
1996
|
5 |
3-5 |
p. 359-365
|
article
|
| 25 |
Gas temperature measurements by laser spectroscopic techniques and by optical emission spectroscopy
|
Gicquel, A.
|
|
1996
|
5 |
3-5 |
p. 366-372
|
article
|
| 26 |
Growth of boron nitride thin films by tuned substrate RF magnetron sputtering
|
Gimeno, S.
|
|
1996
|
5 |
3-5 |
p. 535-538
|
article
|
| 27 |
Growth studies of thin film diamond using molecular beam techniques
|
Loh, K.P.
|
|
1996
|
5 |
3-5 |
p. 231-235
|
article
|
| 28 |
Hard amorphous hydrogenated carbon-nitrogen films obtained by PECVD in methane-ammonia atmospheres
|
Franceschini, D.F.
|
|
1996
|
5 |
3-5 |
p. 471-474
|
article
|
| 29 |
Heteroepitaxial diamond growth on platinum(111) by the Shintani process
|
Tachibana, T.
|
|
1996
|
5 |
3-5 |
p. 197-199
|
article
|
| 30 |
High current d.c. arc (HCDCA) technique for diamond deposition
|
Karner, J.
|
|
1996
|
5 |
3-5 |
p. 217-220
|
article
|
| 31 |
Homo-epitaxial diamond film growth on ion implanted diamond substrates
|
Weiser, P.S.
|
|
1996
|
5 |
3-5 |
p. 272-275
|
article
|
| 32 |
Hydrogen-free amorphous carbon films: correlation between growth conditions and properties
|
Lifshitz, Y.
|
|
1996
|
5 |
3-5 |
p. 388-400
|
article
|
| 33 |
III-V nitride-based light-emitting diodes
|
Nakamura, Shuji
|
|
1996
|
5 |
3-5 |
p. 496-500
|
article
|
| 34 |
Influence of the hydrogen evolution on the structural and electronic properties of a-C:H films
|
Bounouh, Y.
|
|
1996
|
5 |
3-5 |
p. 453-456
|
article
|
| 35 |
In situ infrared measurements during hot filament CVD of diamond in a rotating substrate reactor
|
Morrison Jr., Philip W.
|
|
1996
|
5 |
3-5 |
p. 242-246
|
article
|
| 36 |
Interlayers for diamond deposition on tool materials
|
Endler, I.
|
|
1996
|
5 |
3-5 |
p. 299-303
|
article
|
| 37 |
Investigation of stress and adhesion of cubic boron nitride films
|
Reinke, S.
|
|
1996
|
5 |
3-5 |
p. 508-513
|
article
|
| 38 |
Investigation of the addition of nitrogen-containing gases to a hot filament diamond chemical vapour deposition reactor
|
May, P.W.
|
|
1996
|
5 |
3-5 |
p. 354-358
|
article
|
| 39 |
Investigations of the incorporation of B, P and N into CVD-diamond films by secondary ion mass spectrometry
|
Spicka, H.
|
|
1996
|
5 |
3-5 |
p. 383-387
|
article
|
| 40 |
Knock-on subplantation-induced formation of nanocrystalline c-BN with r.f. magnetron sputtering and r.f. argon ion plating
|
Ulrich, S.
|
|
1996
|
5 |
3-5 |
p. 548-551
|
article
|
| 41 |
Laser-assisted ECR-plasma-CVD of a-C:H films
|
Metev, S.M.
|
|
1996
|
5 |
3-5 |
p. 420-424
|
article
|
| 42 |
Laser projection patterning for the formation of thin film diamond microstructures
|
Chan, Simon S.M.
|
|
1996
|
5 |
3-5 |
p. 317-320
|
article
|
| 43 |
Low temperature limits of diamond film growth by microwave plasma-assisted CVD
|
Stiegler, J.
|
|
1996
|
5 |
3-5 |
p. 226-230
|
article
|
| 44 |
Measurement of absolute CH3 concentration in a hot-filament reactor using cavity ring-down spectroscopy
|
Wahl, E.H.
|
|
1996
|
5 |
3-5 |
p. 373-377
|
article
|
| 45 |
Mechanical and physical properties of amorphous carbon-based alloys
|
De Martino, C.
|
|
1996
|
5 |
3-5 |
p. 461-465
|
article
|
| 46 |
Mechanical properties and Raman spectra of a-C:H and a-C:H:N coatings
|
Vyskocil, J.
|
|
1996
|
5 |
3-5 |
p. 466-470
|
article
|
| 47 |
Mechanism of diamond formation on substrates abraded with a mixture of diamond and metal powders
|
Chakk, Y.
|
|
1996
|
5 |
3-5 |
p. 286-291
|
article
|
| 48 |
Microbalance studies of diamond nucleation and growth rates
|
Evans, Edward A.
|
|
1996
|
5 |
3-5 |
p. 200-205
|
article
|
| 49 |
Modeling diamond chemical vapor deposition in a rotating disk reactor
|
Kassmann, Dean E.
|
|
1996
|
5 |
3-5 |
p. 221-225
|
article
|
| 50 |
Nanocrystalline C=N thin films
|
Szmidt, J.
|
|
1996
|
5 |
3-5 |
p. 564-569
|
article
|
| 51 |
Nitrogenated amorphous carbon as a semiconductor
|
Silva, S.R.P.
|
|
1996
|
5 |
3-5 |
p. 401-404
|
article
|
| 52 |
Non-classical multilayer periodic structures based on DLC films
|
Kondrashov, P.E.
|
|
1996
|
5 |
3-5 |
p. 448-452
|
article
|
| 53 |
Nucleation and growth of diamond films on Mo and Cu substrates
|
Ece, M.
|
|
1996
|
5 |
3-5 |
p. 211-216
|
article
|
| 54 |
Ophthalmological application of contact lenses modified by means of ion-assisted carbon films
|
Sleptsov, V.V.
|
|
1996
|
5 |
3-5 |
p. 483-485
|
article
|
| 55 |
Optimization of diamond nucleation and growth using MW-PACVD method
|
Buchkremer-Hermanns, H.
|
|
1996
|
5 |
3-5 |
p. 312-316
|
article
|
| 56 |
Photoluminescence mechanism in amorphous hydrogenated carbon
|
Robertson, J.
|
|
1996
|
5 |
3-5 |
p. 457-460
|
article
|
| 57 |
Preface to the Proceedings of the 6th European Conference on Diamond, Diamond-like and Related Materials (Diamond Films '95), Barcelona, Spain, September 10–15, 1995
|
Bachmann, Peter K.
|
|
1996
|
5 |
3-5 |
p. xv
|
article
|
| 58 |
Preparation of SiNB films by CVD techniques: effect of SiH4 addition to B2H6 and NH3 gas mixtures
|
Essafti, A.
|
|
1996
|
5 |
3-5 |
p. 580-583
|
article
|
| 59 |
Production of boron nitride nanometric powder by plasma-enhanced chemical vapor deposition: microstructural characterization
|
Costa, J.
|
|
1996
|
5 |
3-5 |
p. 544-547
|
article
|
| 60 |
Properties of diamond like carbon thin film coatings on stainless steel medical guidewires
|
McLaughlin, J.A.
|
|
1996
|
5 |
3-5 |
p. 486-491
|
article
|
| 61 |
Radiation hardness of DLC films produced by ion-assisted deposition
|
Prawer, S.
|
|
1996
|
5 |
3-5 |
p. 405-409
|
article
|
| 62 |
Relation among growth rate, microstructure and the physical properties of diamond films
|
Ascarelli, P.
|
|
1996
|
5 |
3-5 |
p. 308-311
|
article
|
| 63 |
Relationship between the thermodynamic and elastic characteristics of diamond-like and related materials
|
Tsagareishvili, D.Sh.
|
|
1996
|
5 |
3-5 |
p. 475-477
|
article
|
| 64 |
Residual stress and microhardness of DLC multilayer coatings
|
Deng, Jianguo
|
|
1996
|
5 |
3-5 |
p. 478-482
|
article
|
| 65 |
Role of surface diffusion processes during bias-enhanced nucleation of diamond on Si
|
Gerber, J.
|
|
1996
|
5 |
3-5 |
p. 261-265
|
article
|
| 66 |
Spectroscopic ellipsometric study of boron nitride thin films
|
Pascual, E.
|
|
1996
|
5 |
3-5 |
p. 539-543
|
article
|
| 67 |
Sponsors of Diamond Films '95
|
|
|
1996
|
5 |
3-5 |
p. xvi
|
article
|
| 68 |
Structural and chemical characterization of BN thin films deposited onto Si(100) and graphite substrates by pulsed laser deposition
|
Klotzbu¨cher, T.
|
|
1996
|
5 |
3-5 |
p. 525-529
|
article
|
| 69 |
Studies by electron paramagnetic resonance experiments of defects in hydrogenated amorphous carbon films as a function of annealing
|
Sadki, A.
|
|
1996
|
5 |
3-5 |
p. 439-444
|
article
|
| 70 |
Subject index
|
|
|
1996
|
5 |
3-5 |
p. xxiv-xxx
|
article
|
| 71 |
Synthesis of cubic boron nitride thin films by ion-assisted pulsed laser deposition
|
Chen, H.
|
|
1996
|
5 |
3-5 |
p. 552-555
|
article
|
| 72 |
Systematic variation of the Raman spectra of DLC films as a function of sp2:sp3 composition
|
Prawer, S.
|
|
1996
|
5 |
3-5 |
p. 433-438
|
article
|
| 73 |
Temperature dependence of the formation of highly tetrahedral a-C:H
|
Sattel, S.
|
|
1996
|
5 |
3-5 |
p. 425-428
|
article
|
| 74 |
The effect of biological fluids on the response of DLC films to a novel erosion durability test
|
Chandra, L.
|
|
1996
|
5 |
3-5 |
p. 410-414
|
article
|
| 75 |
The effect of substrate position on the orientation and interfacial reaction of epitaxial diamond on silicon
|
Chang, L.
|
|
1996
|
5 |
3-5 |
p. 326-331
|
article
|
| 76 |
The influence of diamond chemical vapour deposition coating parameters on the microstructure and properties of titanium substrates
|
Heinrich, G.
|
|
1996
|
5 |
3-5 |
p. 304-307
|
article
|
| 77 |
The theory of CVD diamond growth
|
Heggie, Malcolm I.
|
|
1996
|
5 |
3-5 |
p. 236-241
|
article
|
| 78 |
Thin films comparable with WC-Co cemented carbides as underlayers for hard and superhard coatings: the state of the art
|
Konyashin, I.Yu.
|
|
1996
|
5 |
3-5 |
p. 575-579
|
article
|
| 79 |
Three-dimensional simulation of CVD diamond film growth
|
Barrat, S.
|
|
1996
|
5 |
3-5 |
p. 276-280
|
article
|
| 80 |
Twin atom source reactor for studies of diamond film growth
|
Donnelly, C.M.
|
|
1996
|
5 |
3-5 |
p. 281-285
|
article
|
| 81 |
Two-step diamond growth for reduced surface roughness
|
Nørgård, C.
|
|
1996
|
5 |
3-5 |
p. 332-337
|
article
|
| 82 |
Ultrasonic pre-treatment for enhanced diamond nucleation
|
Schweitz, Kasper O.
|
|
1996
|
5 |
3-5 |
p. 206-210
|
article
|
| 83 |
Vapour phase deposition of cubic boron nitride
|
Yoshida, Toyonobu
|
|
1996
|
5 |
3-5 |
p. 501-507
|
article
|
Journal description