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                             208 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Ab initio generation of amorphous carbon structures Alvarez, Fernando
 2002
 11 3-6 p. 1015-1018
 artikel
2 Abrasive stripping voltammetry of silver and tin at boron-doped diamond electrodes Chatterjee, Arnab
 2002
 11 3-6 p. 646-650
 artikel
3 Analysis of the growth process of diamond films by chemical vapor deposition Yanagihara, Takashi
 2002
 11 3-6 p. 584-588
 artikel
4 Analysis of the role of fluorine content on the thermal stability of a-C:H:F thin films Valentini, L.
 2002
 11 3-6 p. 1100-1105
 artikel
5 Analysis of the total carbon deposition during the bias enhanced nucleation of diamond on Ir/SrTiO3 (001) using 13C-methane Bauer, Th.
 2002
 11 3-6 p. 493-498
 artikel
6 A new acceptor state in CVD-diamond Garrido, J.A.
 2002
 11 3-6 p. 347-350
 artikel
7 Annealing study of the formation of nickel-related paramagnetic defects in diamond Pereira, R.N.
 2002
 11 3-6 p. 623-626
 artikel
8 A novel CW laser–powder method of carbon single-wall nanotubes production Bolshakov, A.P.
 2002
 11 3-6 p. 927-930
 artikel
9 Application of diamond coatings onto small dental tools Sein, Htet
 2002
 11 3-6 p. 731-735
 artikel
10 Application of two- and four-point contact probes to various monocrystalline diamond surfaces Somogyi, K.
 2002
 11 3-6 p. 332-337
 artikel
11 Arc-melting synthesis of BN nanocapsules from B/Al, TiB2 and VB2 Narita, Ichihito
 2002
 11 3-6 p. 949-952
 artikel
12 Atomic and electronic structures of Si-included C74 cluster studied by HREM and molecular orbital calculations Oku, Takeo
 2002
 11 3-6 p. 935-939
 artikel
13 Atomic-scale models of interactions between inversion domain boundaries and intrinsic basal stacking faults in GaN Kioseoglou, J.
 2002
 11 3-6 p. 905-909
 artikel
14 Atomistic simulation of the bombardment process during the BEN phase of chemical vapor deposition (CVD) of diamond Kohary, K.
 2002
 11 3-6 p. 513-518
 artikel
15 Author Index for Volume 11 2002
 11 3-6 p. 1305-1309
 artikel
16 Bias assisted growth on diamond single crystals: the defect formation due to ion bombardment studied by ion channelling, electron backscatter diffraction, and micro-Raman spectroscopy Schreck, M.
 2002
 11 3-6 p. 487-492
 artikel
17 Black diamond: a new material for active electronic devices Williams, Oliver A.
 2002
 11 3-6 p. 396-399
 artikel
18 Calculation of the charge spreading along a carbon nanotube seen in scanning tunnelling microscopy (STM) Márk, G.I.
 2002
 11 3-6 p. 961-963
 artikel
19 Can we reliably estimate the emission field and field enhancement factor of carbon nanotube film field emitters? Bonard, Jean-Marc
 2002
 11 3-6 p. 763-768
 artikel
20 Carbon films obtained from a C60 fullerene ion beam Huck, H.
 2002
 11 3-6 p. 964-968
 artikel
21 Characterisation of cold electron emitting carbonaceous films containing Ni metallic nanocrystals Dluzewski, P.
 2002
 11 3-6 p. 809-812
 artikel
22 Characterisation of electron irradiated boron-doped diamond Charles, S.J
 2002
 11 3-6 p. 681-685
 artikel
23 Characterisation of silicon carbide and silicon nitride thin films and Si3N4/SiC multilayers Lattemann, M.
 2002
 11 3-6 p. 1248-1253
 artikel
24 Characteristics of hydrogenated amorphous carbon films deposited by large-area microwave-sustained surface wave plasma Nagatsu, M.
 2002
 11 3-6 p. 976-979
 artikel
25 Characteristics of nickel-containing carbon films deposited using electron cyclotron resonance CVD Huang, Q.F.
 2002
 11 3-6 p. 1031-1035
 artikel
26 Characterization of boron carbon nitride films with a low dielectric constant Etou, Yoshihiro
 2002
 11 3-6 p. 985-988
 artikel
27 Chemical vapor deposition diamond thin films growth on Ti6AL4V using the Surfatron system Azevedo, Adriana F.
 2002
 11 3-6 p. 550-554
 artikel
28 Classical approximations for ionised impurity scattering applied to diamond monocrystals Somogyi, K.
 2002
 11 3-6 p. 686-691
 artikel
29 Correlation between surface oxygen content and microstructure of carbon nitride films Szörényi, T.
 2002
 11 3-6 p. 1153-1156
 artikel
30 Cubic boron nitride growth from NH3 and BBr3 precursors: a theoretical study Olander, J.
 2002
 11 3-6 p. 1286-1289
 artikel
31 CVD diamond deposition on steel using arc-plated chromium nitride interlayers Buijnsters, J.G.
 2002
 11 3-6 p. 536-544
 artikel
32 DC and RF characteristics of 0.7-μm-gate-length diamond metal–insulator–semiconductor field effect transistor Ishizaka, Hiroaki
 2002
 11 3-6 p. 378-381
 artikel
33 Defect induced lowering of work function in graphite-like materials Obraztsov, A.N.
 2002
 11 3-6 p. 813-818
 artikel
34 Dependence of the growth rate, quality, and morphology of diamond coatings on the pressure during the CVD-process in an industrial hot-filament plant Schwarz, S.
 2002
 11 3-6 p. 589-595
 artikel
35 Deposition and properties of amorphous carbon phosphide films Pearce, S.R.J.
 2002
 11 3-6 p. 1041-1046
 artikel
36 Deposition of amorphous CN x by d.c. and rf plasma sputtering using a rf radical nitrogen beam source Hayashi, Y.
 2002
 11 3-6 p. 1178-1182
 artikel
37 Deposition of an InN thin film by a r.f. plasma-assisted reactive ion-beam sputtering deposition (R-IBSD) technique Shinoda, Hiroyuki
 2002
 11 3-6 p. 896-900
 artikel
38 Detection of CH x bonds from micro Raman spectroscopy on polycrystalline boron doped diamond electrodes Bernard, M.
 2002
 11 3-6 p. 662-666
 artikel
39 Determination of bonding in diamond-like carbon by Raman spectroscopy Ferrari, Andrea Carlo
 2002
 11 3-6 p. 1053-1061
 artikel
40 Detonation synthesis ultradispersed diamond structural properties investigation by infrared absorption Mironov, E.
 2002
 11 3-6 p. 872-876
 artikel
41 Diagnostics of plasma ball formed in high pressure microwave plasma for diamond film synthesis Nagatsu, M.
 2002
 11 3-6 p. 562-566
 artikel
42 Diamond cantilever with integrated tip for nanomachining Oesterschulze, E.
 2002
 11 3-6 p. 667-671
 artikel
43 Diamond deposition on hardmetal substrates after pre-treatment with boron or sulfur compounds Haubner, R.
 2002
 11 3-6 p. 555-561
 artikel
44 Diamond deposition on Si (111) and carbon face 6HSiC (0001) substrates by positively biased pretreatment Chang, Te-Fu
 2002
 11 3-6 p. 509-512
 artikel
45 Diamond microwave micro relay Adamschik, M.
 2002
 11 3-6 p. 672-676
 artikel
46 Diamond tools for wire sawing metal components Tönshoff, H.K.
 2002
 11 3-6 p. 742-748
 artikel
47 Diamond tools in stone and civil engineering industry: cutting principles, wear and applications Tönshoff, H.K.
 2002
 11 3-6 p. 736-741
 artikel
48 Diffusion of hydrogen from a microwave plasma into diamond and its interaction with dopants and defects Uzan-Saguy, C.
 2002
 11 3-6 p. 316-322
 artikel
49 Direct fusion bonding of silicon to polycrystalline diamond Wolter, S.D.
 2002
 11 3-6 p. 482-486
 artikel
50 DLC composite thin films by sputter deposition Ting, Jyh-Ming
 2002
 11 3-6 p. 1119-1123
 artikel
51 Effect of nanostructure and back contact material on the field emission properties of carbon films Rossi, M.C.
 2002
 11 3-6 p. 819-823
 artikel
52 Effect of plasma parameters on the structure of CN x layers deposited by DC magnetron sputtering Ujvári, T.
 2002
 11 3-6 p. 1200-1204
 artikel
53 Effect of substrate grain size and surface treatments on the cutting properties of diamond coated Co-cemented tungsten carbide tools Polini, Riccardo
 2002
 11 3-6 p. 726-730
 artikel
54 Effects of gas pressure and r.f. power on the growth and properties of magnetron sputter deposited amorphous carbon thin films Andújar, J.L.
 2002
 11 3-6 p. 1005-1009
 artikel
55 Effects of hydrogen incorporation on structural relaxation and vibrational properties of a-CN:H thin films grown by reactive sputtering Messina, G.
 2002
 11 3-6 p. 1166-1171
 artikel
56 Effects of light on the ‘primed’ state of CVD diamond nuclear detectors Manfredotti, C.
 2002
 11 3-6 p. 446-450
 artikel
57 Elastic constants and structural properties of nanometre-thick diamond-like carbon films Beghi, M.G.
 2002
 11 3-6 p. 1062-1067
 artikel
58 Electrical properties of graphite/homoepitaxial diamond contact Chen, Y.G.
 2002
 11 3-6 p. 451-457
 artikel
59 Electrochemical activity of boron-doped diamond electrodes grown on carbon fiber cloths Ferreira, N.G.
 2002
 11 3-6 p. 657-661
 artikel
60 Electrochemical advanced oxidation process for water treatment using DiaChem® electrodes Tröster, I.
 2002
 11 3-6 p. 640-645
 artikel
61 Electron emission from hydrogenated and oxidized heteroepitaxial diamond doped with boron Yamada, Takatoshi
 2002
 11 3-6 p. 780-783
 artikel
62 Electron field emission properties of microcrystalline and nanocrystalline carbon thin films deposited by S-assisted hot filament CVD Gupta, S.
 2002
 11 3-6 p. 799-803
 artikel
63 Engineering properties of fully sp3- to sp2-bonded carbon films and their modifications after post-growth ion irradiation Logothetidis, S.
 2002
 11 3-6 p. 1095-1099
 artikel
64 Enhanced low-temperature thermionic field emission from surface-treated N-doped diamond films Köck, F.A.M.
 2002
 11 3-6 p. 774-779
 artikel
65 Enhancement of the etch rate of CVD diamond by prior C and Ge implantation Leech, P.W.
 2002
 11 3-6 p. 837-840
 artikel
66 Epitaxial growth of phosphorus doped diamond on {111} substrate Casanova, N.
 2002
 11 3-6 p. 328-331
 artikel
67 EPR studies of a nickel–boron centre in synthetic diamond Nadolinny, V.A.
 2002
 11 3-6 p. 627-630
 artikel
68 Etching of p- and n-type doped monocrystalline diamond using an ECR oxygen plasma source Bernard, M.
 2002
 11 3-6 p. 828-832
 artikel
69 Evaluation of corrosion performance of ultra-thin Si-DLC overcoats with electrochemical impedance spectroscopy Papakonstantinou, P.
 2002
 11 3-6 p. 1124-1129
 artikel
70 Fabrication of diamond single-hole transistors using AFM anodization process Banno, Tokishige
 2002
 11 3-6 p. 387-391
 artikel
71 Fabrication of heteroepitaxial diamond thin films on Ir(001)/MgO(001) substrates using antenna-edge-type microwave plasma-assisted chemical vapor deposition Fujisaki, Toyokatsu
 2002
 11 3-6 p. 478-481
 artikel
72 Field emission and Raman spectroscopy studies of atomic hydrogen etching on boron and nitrogen doped DLC films Wu, Y.-H.
 2002
 11 3-6 p. 804-808
 artikel
73 Field emission from carbon films deposited on stainless steel substrate Yamamoto, Akira
 2002
 11 3-6 p. 784-787
 artikel
74 Field emission, structure, cathodoluminescence and formation studies of carbon and Si–C–N nanotubes Chang, Hui Lin
 2002
 11 3-6 p. 793-798
 artikel
75 Formation of diamond p–n junction and its optical emission characteristics Koizumi, Satoshi
 2002
 11 3-6 p. 307-311
 artikel
76 Friction coefficient measurements By LFM on DLC films as function of sputtering deposition parameters Santos, Lúcia V.
 2002
 11 3-6 p. 1135-1138
 artikel
77 From Ψ-MOSFET with silicon on oxide to Ψ-MOSFET with silicon carbide on nitride Ravariu, C.
 2002
 11 3-6 p. 1268-1271
 artikel
78 From straight carbon nanotubes to Y-branched and coiled carbon nanotubes Biró, L.P.
 2002
 11 3-6 p. 1081-1085
 artikel
79 GaN-based heterostructures for sensor applications Stutzmann, M.
 2002
 11 3-6 p. 886-891
 artikel
80 Grain boundaries in boron-doped CVD diamond films Mora, A.E
 2002
 11 3-6 p. 697-702
 artikel
81 Growth mechanism and properties of the large area well-aligned carbon nano-structures deposited by microwave plasma electron cyclotron resonance chemical vapor deposition Lin, Chao Hsun
 2002
 11 3-6 p. 922-926
 artikel
82 Growth mechanism of amorphous hydrogenated carbon von Keudell, A.
 2002
 11 3-6 p. 969-975
 artikel
83 Growth of diamond films with bias during microwave plasma chemical vapor deposition Lu, Chun-An
 2002
 11 3-6 p. 523-526
 artikel
84 Growth of high-quality homoepitaxial diamond films by HF-CVD Stammler, M.
 2002
 11 3-6 p. 504-508
 artikel
85 Highest optical gap tetrahedral amorphous carbon Teo, K.B.K.
 2002
 11 3-6 p. 1086-1090
 artikel
86 High pressure diamond and diamond-like carbon deposition using a microwave CAP reactor McConnell, M.L.
 2002
 11 3-6 p. 1036-1040
 artikel
87 High resistivity and low dielectric constant amorphous carbon nitride films: application to low-k materials for ULSI Aono, Masami
 2002
 11 3-6 p. 1219-1222
 artikel
88 High-resolution electron microscopy and electronic structures of endohedral La@B36N36 clusters Oku, Takeo
 2002
 11 3-6 p. 940-944
 artikel
89 High temperature diffusion chromizing as a successful method for CVD-diamond coating of steel Schwarz, S.
 2002
 11 3-6 p. 757-762
 artikel
90 Hydrogen concentrations and mass density obtained by X-ray and neutron reflectivity on hydrogenated amorphous carbon nitride thin films Santucci, S.
 2002
 11 3-6 p. 1188-1192
 artikel
91 Imaging deep UV light with diamond-based systems Lansley, Stuart P.
 2002
 11 3-6 p. 433-436
 artikel
92 Imaging of the sensitivity in detector grade polycrystalline diamonds using micro-focused X-ray beams Bergonzo, P.
 2002
 11 3-6 p. 418-422
 artikel
93 Implantation-doping of diamond with B+, C+, N+ and O+ ions using low temperature annealing Prins, Johan F.
 2002
 11 3-6 p. 612-617
 artikel
94 Inert gas diffusion in DLC–Si films Camargo Jr, S.S.
 2002
 11 3-6 p. 1091-1094
 artikel
95 Influence of annealing on reverse current of 4H–SiC Schottky diodes Sochacki, Mariusz
 2002
 11 3-6 p. 1263-1267
 artikel
96 Influence of material properties on the performance of diamond photocathodes Foord, John S.
 2002
 11 3-6 p. 437-441
 artikel
97 Influence of nucleation on hydrogen incorporation in CVD diamond films Tang, C.J
 2002
 11 3-6 p. 527-531
 artikel
98 Influence of the energy of sputtered carbon atoms on the constitution of diamond-like carbon thin films Ulrich, S.
 2002
 11 3-6 p. 1010-1014
 artikel
99 Influence of the environment on the surface conductivity of chemical vapor deposition diamond Foord, John S.
 2002
 11 3-6 p. 856-860
 artikel
100 Initial stages of GaN buffer layer growth on (0001) sapphire by metalorganic chemical vapour deposition Degave, F.
 2002
 11 3-6 p. 901-904
 artikel
101 In situ characterisation of CVD diamond growth under H2S addition by optical emission spectroscopy, mass spectroscopy and laser reflection interferometry Sternschulte, H.
 2002
 11 3-6 p. 296-300
 artikel
102 In situ kinetic analysis of SiC filaments CVD Féron, O.
 2002
 11 3-6 p. 1234-1238
 artikel
103 In situ plasma diagnostics of the chemistry behind sulfur doping of CVD diamond films Petherbridge, J.R.
 2002
 11 3-6 p. 301-306
 artikel
104 Investigation of ion implantation-induced damage in the carbon and silicon sublattices of 6H-SiC Zolnai, Z.
 2002
 11 3-6 p. 1239-1242
 artikel
105 Investigation on boron-doped CVD samples Piccirillo, C.
 2002
 11 3-6 p. 338-341
 artikel
106 Investigations of the gas phase chemistry in a hot filament CVD reactor operating with CH4/N2/H2 and CH4/NH3/H2 gas mixtures Mankelevich, Yu.A.
 2002
 11 3-6 p. 567-572
 artikel
107 Ion beam etching of CVD diamond film in Ar, Ar/O2 and Ar/CF4 gas mixtures Leech, P.W.
 2002
 11 3-6 p. 833-836
 artikel
108 Ion implantation of sulphur, boron and nitrogen in diamond: a charge-based deep level transient spectroscopic investigation Troupis, Damianos K.
 2002
 11 3-6 p. 342-346
 artikel
109 IR study of the formation process of polymeric hydrogenated amorphous carbon film Veres, M.
 2002
 11 3-6 p. 1110-1114
 artikel
110 Is stress necessary to stabilise sp3 bonding in diamond-like carbon? Ferrari, A.C.
 2002
 11 3-6 p. 994-999
 artikel
111 Large area deposition of 〈100〉-textured diamond films by a 60-kW microwave plasma CVD reactor Ando, Yutaka
 2002
 11 3-6 p. 596-600
 artikel
112 Large scale synthesis of carbon nanotubes by plasma rotating arc discharge technique Jong Lee, Seung
 2002
 11 3-6 p. 914-917
 artikel
113 Low energy post-growth irradiation of amorphous hydrogenated carbon (a-C:H) films Silinskas, M.
 2002
 11 3-6 p. 1026-1030
 artikel
114 Low temperature plasma chemical vapour deposition of carbon nanotubes Wilson, J.I.B.
 2002
 11 3-6 p. 918-921
 artikel
115 Low temperature properties of the p-type surface conductivity of diamond Nebel, C.E.
 2002
 11 3-6 p. 351-354
 artikel
116 Mechanical properties and performance of magnetron-sputtered graded diamond-like carbon films with and without metal additions Bauer, C.
 2002
 11 3-6 p. 1139-1142
 artikel
117 Micro-structural analysis of carbon nitride (CN x ) film prepared by ion beam assisted magnetron sputtering Jung, Hae-Suk
 2002
 11 3-6 p. 1205-1209
 artikel
118 Microstructure and stress in nano-crystalline diamond films deposited by DC glow discharge CVD Heiman, A.
 2002
 11 3-6 p. 601-607
 artikel
119 Microwave plasma CVD diamond layers on three-dimensional structured Si for protective coating Csorbai, H.
 2002
 11 3-6 p. 519-522
 artikel
120 Modelling transition metals in diamond Johnston, Karl
 2002
 11 3-6 p. 631-634
 artikel
121 Molecular dynamics calculation of H2 gas storage in C60 and B36N36 clusters Narita, Ichihito
 2002
 11 3-6 p. 945-948
 artikel
122 Morphology and characterization of highly nitrogenated, aligned, amorphous carbon nano-rods formed on an alumina template by ECR-CVD Liu, X.W.
 2002
 11 3-6 p. 1193-1199
 artikel
123 Multi-band structure of amorphous carbon luminescence Koós, M.
 2002
 11 3-6 p. 1115-1118
 artikel
124 Nanometer rough, sub-micrometer-thick and continuous diamond chemical vapor deposition film promoted by a synergetic ultrasonic effect Akhvlediani, R.
 2002
 11 3-6 p. 545-549
 artikel
125 New technology for high rate synthesis of PC-diamond coatings in air with photon plasmatron Metev, S.
 2002
 11 3-6 p. 472-477
 artikel
126 Nitrogen and phosphorus implanted MESFETs in semi-insulating 4H-SiC Tucker, J.B.
 2002
 11 3-6 p. 392-395
 artikel
127 n-Type doping of diamond by sulfur and phosphorus Gheeraert, E.
 2002
 11 3-6 p. 289-295
 artikel
128 On the bonding structure of hydrogenated carbon nitrides grown by electron cyclotron resonance chemical vapour deposition: towards the synthesis of non-graphitic carbon nitrides Alonso, F.
 2002
 11 3-6 p. 1161-1165
 artikel
129 On the ion-sensitivity of H-terminated surface channel devices on diamond Müller, R.
 2002
 11 3-6 p. 651-656
 artikel
130 Optical brazing technique for bonding diamond films to zinc sulfide Li, Jingqi
 2002
 11 3-6 p. 753-756
 artikel
131 Optical investigation of Al x Ga1−x N epitaxial films grown on AlN buffer layers Teofilov, N.
 2002
 11 3-6 p. 892-895
 artikel
132 Optical strength in UV region of amorphous carbon Nánai, L.
 2002
 11 3-6 p. 1106-1109
 artikel
133 Optimised contact-structures for metal–diamond–metal UV-detectors Salvatori, S
 2002
 11 3-6 p. 458-462
 artikel
134 Optimization of 2H, 4H and 6H–SiC high speed vertical MESFETs Bertilsson, K.
 2002
 11 3-6 p. 1254-1257
 artikel
135 Paramagnetic centres and microstructure of reactively sputtered amorphous carbon nitride thin films Fanchini, G.
 2002
 11 3-6 p. 1143-1148
 artikel
136 Photoconductivity of highly oriented and randomly oriented diamond films for the detection of fast UV laser pulses Achard, J.
 2002
 11 3-6 p. 423-426
 artikel
137 Photoelectron spectroscopy of boron-doped homoepitaxial diamond (100) surfaces with several terminations and related Schottky barriers Saby, C.
 2002
 11 3-6 p. 851-855
 artikel
138 Photoluminescence studies of type IIa and nitrogen doped CVD diamond Wotherspoon, A.
 2002
 11 3-6 p. 692-696
 artikel
139 Plasma chemistry during deposition of a-C:H Benedikt, J.
 2002
 11 3-6 p. 989-993
 artikel
140 Polycrystalline diamond synthesis by means of high power pulsed plasma glow discharge CVD Sciortino, S.
 2002
 11 3-6 p. 573-578
 artikel
141 Precursor design in c-BN growth Larsson, Karin
 2002
 11 3-6 p. 1300-1304
 artikel
142 Preface Robertson, John
 2002
 11 3-6 p. xv
 artikel
143 Preparation and properties of amorphous carbon oxy-nitride films made by the layer-by-layer method Naruse, Yohko
 2002
 11 3-6 p. 1210-1214
 artikel
144 Preparation and properties of sub-micron thick and free-standing diamond membranes Michaelson, Sh.
 2002
 11 3-6 p. 721-725
 artikel
145 Preparation of AlN and LiNbO3 thin films on diamond substrates by sputtering method Ishihara, M.
 2002
 11 3-6 p. 408-412
 artikel
146 Programme Committee 2002
 11 3-6 p. xvii-xviii
 artikel
147 Properties of carbon nitride (CN x ) films deposited by a high-density plasma ion plating method Chen, Liang-Yih
 2002
 11 3-6 p. 1172-1177
 artikel
148 Properties of W/a-C nanometric multilayers produced by RF-pulsed magnetron sputtering Pinyol, A.
 2002
 11 3-6 p. 1000-1004
 artikel
149 Pulsed laser ablation of graphite in O2 atmosphere for preparation of diamond films and carbon nanotubes Nakajima, K.
 2002
 11 3-6 p. 953-956
 artikel
150 Pulsed laser deposition of CN x films: role of r.f. nitrogen plasma activation for the film structure formation Bulı́ř, J.
 2002
 11 3-6 p. 1223-1226
 artikel
151 Pulsed PECVD deposition of diamond-like carbon films Fedosenko, G.
 2002
 11 3-6 p. 1047-1052
 artikel
152 Quantitative comparison of adhesive toughness for various diamond films on co-cemented tungsten carbide Kamiya, Shoji
 2002
 11 3-6 p. 716-720
 artikel
153 Reactive DC magnetron sputtering of aluminum nitride films for surface acoustic wave devices Assouar, M.B.
 2002
 11 3-6 p. 413-417
 artikel
154 Reactive ion etching of CVD-diamond for piezoresistive pressure sensors Otterbach, R.
 2002
 11 3-6 p. 841-844
 artikel
155 Recent progresses of the BOLD investigation towards UV detectors for the ESA Solar Orbiter Hochedez, J-F.
 2002
 11 3-6 p. 427-432
 artikel
156 Recombination-enhanced diffusion of self-interstitial atoms and vacancy–interstitial recombination in diamond Newton, M.E.
 2002
 11 3-6 p. 618-622
 artikel
157 Relaxation in undoped polycrystalline CVD diamond films under red illumination Alvarez, J.
 2002
 11 3-6 p. 635-639
 artikel
158 Report on the influence of HPHT annealing on the 3107 cm−1 hydrogen related absorption peak in natural type Ia diamonds De Weerdt, Filip
 2002
 11 3-6 p. 714-715
 artikel
159 Response time of photoconductivity of amorphous carbon nitride films prepared by a nitrogen radical sputter method Katsuno, T.
 2002
 11 3-6 p. 1215-1218
 artikel
160 RF performance of surface channel diamond FETs with sub-micron gate length Aleksov, A.
 2002
 11 3-6 p. 382-386
 artikel
161 Role of adsorbates in field emission from nanotubes Collazo, R.
 2002
 11 3-6 p. 769-773
 artikel
162 Schottky junction properties of the high conductivity layer of diamond Takeuchi, Daisuke
 2002
 11 3-6 p. 355-358
 artikel
163 Silicon carbide Schottky and ohmic contact process dependence Badila, M.
 2002
 11 3-6 p. 1258-1262
 artikel
164 Smooth and high-rate reactive ion etching of diamond Ando, Yutaka
 2002
 11 3-6 p. 824-827
 artikel
165 Soft X-ray photoelectron microscopy used for the characterization of diamond, a-C and CN x , thin films Ziethen, Ch.
 2002
 11 3-6 p. 1068-1073
 artikel
166 Spectroscopic analysis of single-wall carbon nanotubes and carbon nanotube peapods Pfeiffer, R.
 2002
 11 3-6 p. 957-960
 artikel
167 Spectroscopic ellipsometry studies on BN films from IR to vacuum UV energy region Panayiotatos, Y.
 2002
 11 3-6 p. 1281-1285
 artikel
168 Sponsors of Diamond 2001 2002
 11 3-6 p. xvi
 artikel
169 Stimulated desorption of D− from diamond: surface versus sub-surface processes via resonance dissociative electron attachment Hoffman, A.
 2002
 11 3-6 p. 867-871
 artikel
170 Stoichiometry and interface effects on the electronic and optical properties of SiC nanoparticles Kassiba, A.
 2002
 11 3-6 p. 1243-1247
 artikel
171 Stresses in pulsed laser deposited cubic boron nitride films Reisse, Guenter
 2002
 11 3-6 p. 1276-1280
 artikel
172 Structural characterization of hard a-C:H films as a function of the methane pressure Lacerda, R.G.
 2002
 11 3-6 p. 980-984
 artikel
173 Structure of diamond single crystals of different origins studies by Kossel's method Tkach, V.N.
 2002
 11 3-6 p. 882-885
 artikel
174 Studies of pulse operation regime of microwave plasma CVD reactor Akhmedzhanov, R.A.
 2002
 11 3-6 p. 579-583
 artikel
175 Study of carbon nanoemitters using CO2–CH4 gas mixtures in triode-type field emission arrays Chen, C.F.
 2002
 11 3-6 p. 788-792
 artikel
176 Subject Index of Volume 11 2002
 11 3-6 p. 1310-1327
 artikel
177 Substrate bias effect on amorphous nitrogenated carbon films deposited by filtered arc deposition Li, Yan-Way
 2002
 11 3-6 p. 1227-1233
 artikel
178 Surface acoustic waves on nanocrystalline diamond Bi, B.
 2002
 11 3-6 p. 677-680
 artikel
179 Surface conductivity of nitrogen-doped diamond Ristein, J.
 2002
 11 3-6 p. 359-364
 artikel
180 Surface vibrations on clean, deuterated, and hydrogenated single crystal diamond(100) surfaces studied by high-resolution electron energy loss spectroscopy Kinsky, J.
 2002
 11 3-6 p. 365-370
 artikel
181 Synchrotron radiation study of surface versus sub-surface deuterium in diamond films produced by exposure to deuterium activated by hot filament-high vacuum and ex situ microwave plasma Laikhtman, A.
 2002
 11 3-6 p. 371-377
 artikel
182 Synthesis and characterization of cubic boron nitride films — investigations of growth and annealing processes Sell, K.
 2002
 11 3-6 p. 1272-1275
 artikel
183 Synthesis and tribological characteristics of nanocrystalline diamond film using CH4/H2 microwave plasmas Hong, Sung-Pill
 2002
 11 3-6 p. 877-881
 artikel
184 Synthesis of B–C–N thin films by electron beam excited plasma CVD Hasegawa, Takeshi
 2002
 11 3-6 p. 1290-1294
 artikel
185 The CAP-reactor, a novel microwave CVD system for diamond deposition Pleuler, E.
 2002
 11 3-6 p. 467-471
 artikel
186 The cavity ring-down spectroscopy of C2 in a microwave plasma John, P.
 2002
 11 3-6 p. 608-611
 artikel
187 The dislocations of low-angle grain boundaries in GaN epilayers: a HRTEM quantitative study and finite element stress state calculation Kret, S.
 2002
 11 3-6 p. 910-913
 artikel
188 The effect of catalysis on the formation of one-dimensional carbon structured materials Jong, W.J.
 2002
 11 3-6 p. 1019-1025
 artikel
189 The effect of process parameters on the chemical structure of pulsed laser deposited carbon nitride films Bertóti, I.
 2002
 11 3-6 p. 1157-1160
 artikel
190 The effects of Si incorporation on the electrochemical and nanomechanical properties of DLC thin films Papakonstantinou, P.
 2002
 11 3-6 p. 1074-1080
 artikel
191 The formation of a (111) texture of the diamond film on Pt/TiO2/SiO x /Si substrate by microwave plasma chemical vapor deposition Hayashi, Yasuhiko
 2002
 11 3-6 p. 499-503
 artikel
192 The kinetics of the capture of nitrogen by nickel defects in diamond Smith, Alexander
 2002
 11 3-6 p. 312-315
 artikel
193 The large area deposition of diamond by the multi-cathode direct current plasma assisted chemical vapor deposition (DC PACVD) method Lee, Jae-Kap
 2002
 11 3-6 p. 463-466
 artikel
194 Theoretical modeling of sulfur–hydrogen complexes in diamond Miyazaki, T.
 2002
 11 3-6 p. 323-327
 artikel
195 The origin of charge transients in Al/undoped diamond/p-Si diodes Thurzo, I.
 2002
 11 3-6 p. 400-404
 artikel
196 The oxidation of (100) textured diamond John, P.
 2002
 11 3-6 p. 861-866
 artikel
197 The radiation hardness properties of γ-ray for SOD circuits fabricated on 4-inch SOD wafer Gu, Changzhi
 2002
 11 3-6 p. 405-407
 artikel
198 Thermal conductivity enhancement in cutting tools by chemical vapor deposition diamond coating Miranzo, P.
 2002
 11 3-6 p. 703-707
 artikel
199 Thermal diffusivity in diamond, SiC x N y and BC x N y Chattopadhyay, S.
 2002
 11 3-6 p. 708-713
 artikel
200 Transmission electron microscopy studies of nanofibers formed on Fe7C3-carbide Blank, V.D.
 2002
 11 3-6 p. 931-934
 artikel
201 Tribological properties of Al–Si–Cu–Mg alloy-based composite-dispersing diamond nanocluster Hanada, K.
 2002
 11 3-6 p. 749-752
 artikel
202 Tribological properties of diamond-like carbon films prepared by mass-separated ion beam deposition Yamamoto, Kazuhiro
 2002
 11 3-6 p. 1130-1134
 artikel
203 UV photodetector from Schottky diode diamond film Thaiyotin, L.
 2002
 11 3-6 p. 442-445
 artikel
204 Variation of nitrogen incorporation and bonding configuration of carbon nitride films studied by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FT-IR) spectroscopic ellipsometry Kennou, S.
 2002
 11 3-6 p. 1183-1187
 artikel
205 Very adherent CVD diamond film on modified molybdenum surface Trava-Airoldi, Vladimir J.
 2002
 11 3-6 p. 532-535
 artikel
206 Wettability and surface energy of oxidized and hydrogen plasma-treated diamond films Ostrovskaya, L.
 2002
 11 3-6 p. 845-850
 artikel
207 XPS characterization of the composition and bonding states of elements in CN x layers prepared by ion beam assisted deposition Ujvári, T.
 2002
 11 3-6 p. 1149-1152
 artikel
208 X-Ray absorption study of the bonding structure of BCN compounds enriched in carbon by CH4 ion assistance Gago, R
 2002
 11 3-6 p. 1295-1299
 artikel
                             208 gevonden resultaten
 
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