nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Author Index to Vol. 27, No. 5
|
|
|
2005 |
27 |
5 |
p. 1101-1109 9 p. |
artikel |
2 |
Bandstructure analysis of strain compensated Si/SiGe quantum cascade structures
|
Sigg, H. |
|
2005 |
27 |
5 |
p. 841-845 5 p. |
artikel |
3 |
Birefringence characterization of mono-dispersed silicon nanocrystals planar waveguides
|
Navarro-Urrios, D. |
|
2005 |
27 |
5 |
p. 763-768 6 p. |
artikel |
4 |
Blue emission in mesoporous silica excited by synchrotron radiation
|
Anedda, A. |
|
2005 |
27 |
5 |
p. 958-961 4 p. |
artikel |
5 |
Characterisation of room temperature blue emmiting Si/SiO2 multilayers
|
Modreanu, M. |
|
2005 |
27 |
5 |
p. 1020-1025 6 p. |
artikel |
6 |
Colloidal suspensions of silicon nanocrystals: from single nanocrystals to photonic structures
|
Valenta, J. |
|
2005 |
27 |
5 |
p. 1046-1049 4 p. |
artikel |
7 |
Comparison between strip and rib SOI microwaveguides for intra-chip light distribution
|
Vivien, L. |
|
2005 |
27 |
5 |
p. 756-762 7 p. |
artikel |
8 |
Contents list
|
|
|
2005 |
27 |
5 |
p. vii-ix nvt p. |
artikel |
9 |
Correlation between electroluminescence and structural properties of Si nanoclusters
|
Irrera, A. |
|
2005 |
27 |
5 |
p. 1031-1040 10 p. |
artikel |
10 |
Doping of β-FeSi2 films with boron and arsenic by sputtering and its application for optoelectronic devices
|
Liu, Zhengxin |
|
2005 |
27 |
5 |
p. 942-947 6 p. |
artikel |
11 |
1D photonic crystal fabricated by wet etching of silicon
|
Tolmachev, V.A. |
|
2005 |
27 |
5 |
p. 831-835 5 p. |
artikel |
12 |
Editorial board
|
|
|
2005 |
27 |
5 |
p. CO2- 1 p. |
artikel |
13 |
Effect of “buffer layers” on the optical properties of silicon nanocrystal superlattices
|
Glover, M. |
|
2005 |
27 |
5 |
p. 977-982 6 p. |
artikel |
14 |
Efficient silicon light emitting diodes by boron implantation: the mechanism
|
Sun, J.M. |
|
2005 |
27 |
5 |
p. 1041-1045 5 p. |
artikel |
15 |
Electron hole liquid in silicon single quantum wells
|
Pauc, N. |
|
2005 |
27 |
5 |
p. 995-999 5 p. |
artikel |
16 |
Elemental devices, circuits and processes for a monolithic Si/III–V–N alloy OEIC
|
Yonezu, H. |
|
2005 |
27 |
5 |
p. 799-803 5 p. |
artikel |
17 |
Enhancement of photoresponse properties of β-FeSi2/Si heterojunctions by Al doping
|
Maeda, Yoshihito |
|
2005 |
27 |
5 |
p. 920-924 5 p. |
artikel |
18 |
Erbium–Silicon–Oxide crystalline films prepared by MOMBE
|
Masaki, K. |
|
2005 |
27 |
5 |
p. 876-879 4 p. |
artikel |
19 |
Erbium–silicon–oxide nano-crystallite waveguide formation based on nano-porous silicon
|
Kimura, T. |
|
2005 |
27 |
5 |
p. 880-883 4 p. |
artikel |
20 |
Fabrication and optical properties of Er-doped multilayers Si-rich SiO2/SiO2: size control, optimum Er–Si coupling and interaction distance monitoring
|
Gourbilleau, F. |
|
2005 |
27 |
5 |
p. 868-875 8 p. |
artikel |
21 |
Ga-doping for β-FeSi2 films prepared by molecular beam epitaxy
|
Fukuzawa, Yasuhiro |
|
2005 |
27 |
5 |
p. 935-941 7 p. |
artikel |
22 |
Ge dot mid-infrared photodetectors
|
Tong, Song |
|
2005 |
27 |
5 |
p. 1097-1100 4 p. |
artikel |
23 |
Ge islands and photonic crystals for Si-based photonics
|
Boucaud, P. |
|
2005 |
27 |
5 |
p. 792-798 7 p. |
artikel |
24 |
Growth and photoluminescence of self-assembled islands obtained during the deposition of Ge on a strained SiGe layer
|
Lobanov, D.N. |
|
2005 |
27 |
5 |
p. 818-821 4 p. |
artikel |
25 |
Growth and structural characterisation of Si/SiGe heterostructures for optoelectronic applications
|
Li, X.B. |
|
2005 |
27 |
5 |
p. 855-858 4 p. |
artikel |
26 |
Influence of Er concentration on the emission properties of Er-doped Si-rich silica films obtained by reactive magnetron co-sputtering
|
Carrada, M. |
|
2005 |
27 |
5 |
p. 915-919 5 p. |
artikel |
27 |
Influence of temperature and hydrogen rate on silicon incorporation in silica films by reactive magnetron co-sputtering
|
Chausserie, S. |
|
2005 |
27 |
5 |
p. 1026-1030 5 p. |
artikel |
28 |
I–V characteristics of structures with porous silicon in electrolyte
|
Mkhitaryan, Z.H. |
|
2005 |
27 |
5 |
p. 962-966 5 p. |
artikel |
29 |
Long wavelength room temperature laser operation of a strained InGaAs/GaAs quantum well structure monolithically grown by metalorganic chemical vapour deposition on a low energy-plasma enhanced chemical vapour deposition graded misoriented Ge/Si virtual substrate
|
Chriqui, Y. |
|
2005 |
27 |
5 |
p. 846-850 5 p. |
artikel |
30 |
Luminescence characteristics of Ge nanocrystals embedded in SiO2 matrix
|
Ray, S.K. |
|
2005 |
27 |
5 |
p. 948-952 5 p. |
artikel |
31 |
Luminescence of polymorphous silicon carbon alloys
|
Suendo, Veinardi |
|
2005 |
27 |
5 |
p. 953-957 5 p. |
artikel |
32 |
Luminescent properties of Er and Si co-implanted silicates
|
Pellegrino, P. |
|
2005 |
27 |
5 |
p. 910-914 5 p. |
artikel |
33 |
Microarrays of silicon-based light emitters for novel biosensor and lab-on-a-chip applications
|
Rebohle, L. |
|
2005 |
27 |
5 |
p. 1055-1058 4 p. |
artikel |
34 |
Microring and microdisk optical resonators using silicon nanocrystals and erbium prepared using silicon technology
|
Gardner, Donald S. |
|
2005 |
27 |
5 |
p. 804-811 8 p. |
artikel |
35 |
Monolithic and hybrid near infrared detection and imaging based on poly-Ge photodiode arrays
|
Masini, G. |
|
2005 |
27 |
5 |
p. 1079-1083 5 p. |
artikel |
36 |
Near-infrared surface plasmon resonance sensing on a Si platform with nanoparticle-based signal enhancement
|
Patskovsky, Sergiy |
|
2005 |
27 |
5 |
p. 1093-1096 4 p. |
artikel |
37 |
On the mechanism of electroluminescence excitation in Er-doped SiO2 containing silicon nanoclusters
|
Sun, J.M. |
|
2005 |
27 |
5 |
p. 1050-1054 5 p. |
artikel |
38 |
Optical cavities for Si/SiGe tetrahertz quantum cascade emitters
|
Kelsall, R.W. |
|
2005 |
27 |
5 |
p. 851-854 4 p. |
artikel |
39 |
Optical gain in a-SiN x :H〈Nd〉
|
Tessler, L.R. |
|
2005 |
27 |
5 |
p. 769-772 4 p. |
artikel |
40 |
Optical gain in different silicon nanocrystal systems
|
Fauchet, P.M. |
|
2005 |
27 |
5 |
p. 745-749 5 p. |
artikel |
41 |
Optical gain in nanocrystalline silicon: comparison of planar waveguide geometry with a non-waveguiding ensemble of nanocrystals
|
Luterová, K. |
|
2005 |
27 |
5 |
p. 750-755 6 p. |
artikel |
42 |
Optical properties of silicon nanocrystalline thin films grown by pulsed laser deposition
|
Kim, Jong Hoon |
|
2005 |
27 |
5 |
p. 991-994 4 p. |
artikel |
43 |
Optical signal and image processing device optimized for optical readout
|
Vieira, M. |
|
2005 |
27 |
5 |
p. 1064-1068 5 p. |
artikel |
44 |
Organizers/Sponsors
|
|
|
2005 |
27 |
5 |
p. vi- 1 p. |
artikel |
45 |
Oxidation effects on the photoluminescent properties of Si nanocrystalline thin films
|
Jeon, Kyung Ah |
|
2005 |
27 |
5 |
p. 988-990 3 p. |
artikel |
46 |
Photoconductive gain of SiGe/Si quantum well photodetectors
|
Liu, Fei |
|
2005 |
27 |
5 |
p. 864-867 4 p. |
artikel |
47 |
Photoluminescence and electroluminescence of amorphous SiO x films prepared by reactive evaporation of silicon with oxygen
|
Jambois, O. |
|
2005 |
27 |
5 |
p. 1074-1078 5 p. |
artikel |
48 |
Photoluminescence enhancement in impurity doped β-FeSi2
|
Terai, Yoshikazu |
|
2005 |
27 |
5 |
p. 925-928 4 p. |
artikel |
49 |
Photoluminescence excitation spectroscopy of erbium in epitaxially grown Si:Er structures
|
Yablonskiy, A.N. |
|
2005 |
27 |
5 |
p. 890-893 4 p. |
artikel |
50 |
Photoluminescence from an active planar optical waveguide made of silicon nanocrystals: dominance of leaky substrate modes in dissipative structures
|
Ostatnický, T. |
|
2005 |
27 |
5 |
p. 781-786 6 p. |
artikel |
51 |
Photoluminescence from erbium incorporated in oxidized porous silicon
|
Bondarenko, V. |
|
2005 |
27 |
5 |
p. 894-899 6 p. |
artikel |
52 |
Photoluminescence of nanometric single silicon quantum wells
|
Pauc, N. |
|
2005 |
27 |
5 |
p. 1000-1003 4 p. |
artikel |
53 |
Photoluminescence studies of Sn quantum dots in Si grown by MBE
|
Karim, A. |
|
2005 |
27 |
5 |
p. 836-840 5 p. |
artikel |
54 |
p–i–n flexible imaging devices with optical readout
|
Louro, P. |
|
2005 |
27 |
5 |
p. 1069-1073 5 p. |
artikel |
55 |
Porous silicon optical devices for sensing applications
|
Torres-Costa, V. |
|
2005 |
27 |
5 |
p. 1084-1087 4 p. |
artikel |
56 |
Preface
|
Fauchet, P.M. |
|
2005 |
27 |
5 |
p. v- 1 p. |
artikel |
57 |
Recent progress in integrated waveguides based on oxidized porous silicon
|
Balucani, M. |
|
2005 |
27 |
5 |
p. 776-780 5 p. |
artikel |
58 |
Silicon-based light emission after ion implantation
|
Kittler, M. |
|
2005 |
27 |
5 |
p. 967-972 6 p. |
artikel |
59 |
Simultaneous observation of “Self Trapped Exciton” and Q-confined exciton luminescence emission in silicon nanocrystals
|
De la Torre, J. |
|
2005 |
27 |
5 |
p. 1004-1007 4 p. |
artikel |
60 |
Single dot optical spectroscopy of silicon nanocrystals: low temperature measurements
|
Sychugov, Ilya |
|
2005 |
27 |
5 |
p. 973-976 4 p. |
artikel |
61 |
Site of Er ions in Er-implanted silica containing Si nanoclusters
|
Maurizio, C. |
|
2005 |
27 |
5 |
p. 900-903 4 p. |
artikel |
62 |
Stripes of 2D photonic crystal obtained from macroporous silicon
|
Astrova, E.V. |
|
2005 |
27 |
5 |
p. 827-830 4 p. |
artikel |
63 |
Studies of Ga diffusion and the elimination of pinholes in Ga-doped β-FeSi2 films prepared by MBE
|
Kuroda, Ryo |
|
2005 |
27 |
5 |
p. 929-934 6 p. |
artikel |
64 |
Study of the energy transfer mechanism in different glasses co-doped with Si nanoaggregates and Er3+ ions
|
Enrichi, F. |
|
2005 |
27 |
5 |
p. 904-909 6 p. |
artikel |
65 |
Study of the photoluminescence of amorphous and crystalline silicon clusters in SiO x thin films
|
Rinnert, H. |
|
2005 |
27 |
5 |
p. 983-987 5 p. |
artikel |
66 |
Super linear position sensitive detectors using MIS structures
|
Águas, H. |
|
2005 |
27 |
5 |
p. 1088-1092 5 p. |
artikel |
67 |
Switching light on a silicon chip
|
Lipson, Michal |
|
2005 |
27 |
5 |
p. 731-739 9 p. |
artikel |
68 |
The electronic and optical properties of silicon nanoclusters: absorption and emission
|
Luppi, Eleonora |
|
2005 |
27 |
5 |
p. 1008-1013 6 p. |
artikel |
69 |
Time dependence and excitation spectra of the photoluminescence emission at 1.54μm in Si-nanocluster and Er co-doped silica
|
Falconieri, M. |
|
2005 |
27 |
5 |
p. 884-889 6 p. |
artikel |
70 |
Time-resolved photoluminescence in a-SiN x :H〈Nd〉 planar waveguides: evidence for stimulated emission
|
Biggemann, Daniel |
|
2005 |
27 |
5 |
p. 773-775 3 p. |
artikel |
71 |
Towards controllable optical properties of silicon based nanoparticles for applications in opto-electronics
|
Trave, E. |
|
2005 |
27 |
5 |
p. 1014-1019 6 p. |
artikel |
72 |
Tunable photonic bandgap structures for optical interconnects
|
Weiss, S.M. |
|
2005 |
27 |
5 |
p. 740-744 5 p. |
artikel |
73 |
Two- and multi-terminal CMOS/BiCMOS Si LED’s
|
du Plessis, Monuko |
|
2005 |
27 |
5 |
p. 1059-1063 5 p. |
artikel |
74 |
Two-dimensionally-patterned silicon nanocrystal arrays
|
Meldrum, A. |
|
2005 |
27 |
5 |
p. 812-817 6 p. |
artikel |
75 |
UHV-CVD growth and annealing of thin fully relaxed Ge films on (001)Si
|
Halbwax, M. |
|
2005 |
27 |
5 |
p. 822-826 5 p. |
artikel |
76 |
Wave function engineering in W designed strained-compensated Si/Si1−x Ge x /Si type II quantum wells for 1.55μm optical properties
|
Sfina, N. |
|
2005 |
27 |
5 |
p. 859-863 5 p. |
artikel |
77 |
Wavelength tunable thermo-optic filter using buckling effect of etalon composed poly-Si/SiO2 multi-layers
|
Park, Hun-Yong |
|
2005 |
27 |
5 |
p. 787-791 5 p. |
artikel |