| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Ab initio study of the magnetic interaction of Co and Ni doped ZnO with intrinsic vacancies
|
Debernardi, Alberto
|
|
2009
|
213-214 |
23-24 |
p. 4791-4793
3 p.
|
artikel
|
| 2 |
Absence of ferromagnetism in Mn- and Fe-stabilized zirconia nanoparticles
|
Yu, J.
|
|
2008
|
213-214 |
23-24 |
p. 4264-4268
5 p.
|
artikel
|
| 3 |
Ac conductivity and dielectric properties of Ga2S3–Ga2Se3 films
|
Bekheet, A.E.
|
|
2008
|
213-214 |
23-24 |
p. 4342-4346
5 p.
|
artikel
|
| 4 |
A first-principles-derived method for computing the piezoelectric coefficients of complex semiconductor Sc1−
x
Ga
x
N alloys
|
Alsaad, A.
|
|
2008
|
213-214 |
23-24 |
p. 4174-4181
8 p.
|
artikel
|
| 5 |
Alloy and lattice disorder in Hf implanted
Al
x
Ga
1
-
x
N
(
0
≤
x
≤
1
)
|
Geruschke, Thomas
|
|
2009
|
213-214 |
23-24 |
p. 4882-4885
4 p.
|
artikel
|
| 6 |
An ab initio study of the adsorption and dissociation of molecular oxygen on the (0001) surface of double hexagonal close-packed americium
|
Dholabhai, Pratik P.
|
|
2008
|
213-214 |
23-24 |
p. 4269-4280
12 p.
|
artikel
|
| 7 |
Analysis of photoluminescence spectra for detection of stress-induced defects in silicon substrates after the polycrystalline diamond film deposition
|
Bagaev, Victor S.
|
|
2009
|
213-214 |
23-24 |
p. 4616-4618
3 p.
|
artikel
|
| 8 |
An application of gold diffusion for defect investigation in silicon
|
Feklisova, O.V.
|
|
2009
|
213-214 |
23-24 |
p. 4681-4684
4 p.
|
artikel
|
| 9 |
A new spin one defect in cubic SiC
|
Bratus’, V.Ya.
|
|
2009
|
213-214 |
23-24 |
p. 4739-4741
3 p.
|
artikel
|
| 10 |
An investigation of structural properties of GaN films grown on patterned sapphire substrates by MOVPE
|
Törmä, P.T.
|
|
2009
|
213-214 |
23-24 |
p. 4911-4915
5 p.
|
artikel
|
| 11 |
A TEM study of in-grown stacking faults in 3C-SiC layers grown by CF-PVT on 4H-SiC substrates
|
Marinova, Maya
|
|
2009
|
213-214 |
23-24 |
p. 4749-4751
3 p.
|
artikel
|
| 12 |
Atomic structure of threading dislocations in AlN thin films
|
Tokumoto, Yuki
|
|
2009
|
213-214 |
23-24 |
p. 4886-4888
3 p.
|
artikel
|
| 13 |
Band-to-band and direct optical excitation of Er in silicon: Comparison of kinetics, temperature dependence of erbium PL
|
Yablonskiy, A.N.
|
|
2009
|
213-214 |
23-24 |
p. 4601-4603
3 p.
|
artikel
|
| 14 |
Behavior of dislocations due to thermal shock and critical shear stress of Si in Czochralski crystal growth
|
Taishi, Toshinori
|
|
2009
|
213-214 |
23-24 |
p. 4612-4615
4 p.
|
artikel
|
| 15 |
Bistable character of a deep level in polycrystalline Si substrate for solar cell
|
Yamashita, Y.
|
|
2009
|
213-214 |
23-24 |
p. 5071-5074
4 p.
|
artikel
|
| 16 |
Boron–hydrogen complexes in diamond: Energy levels and metastable states
|
Lombardi, E.B.
|
|
2009
|
213-214 |
23-24 |
p. 4525-4528
4 p.
|
artikel
|
| 17 |
Boron non-uniform precipitation in Si at the Ostwald ripening stage
|
Feklistov, Konstantin
|
|
2009
|
213-214 |
23-24 |
p. 4641-4644
4 p.
|
artikel
|
| 18 |
Capacitance investigation of Ge nanoclusters on a silicon (001) surface grown by MBE at low temperatures
|
Feklisova, O.V.
|
|
2009
|
213-214 |
23-24 |
p. 4705-4707
3 p.
|
artikel
|
| 19 |
Capacitance spectroscopy of CdTe self-assembled quantum dots embedded in ZnTe matrix
|
Placzek-Popko, E.
|
|
2009
|
213-214 |
23-24 |
p. 5173-5176
4 p.
|
artikel
|
| 20 |
Characterization of defects in undoped non c-plane and high resistance GaN layers dominated by stacking faults
|
Witte, H.
|
|
2009
|
213-214 |
23-24 |
p. 4922-4924
3 p.
|
artikel
|
| 21 |
Characterization of II–VI: 3d crystals with the help of ultrasonic technique
|
Gudkov, V.V.
|
|
2009
|
213-214 |
23-24 |
p. 5244-5246
3 p.
|
artikel
|
| 22 |
Characterization of major in-grown stacking faults in 4H-SiC epilayers
|
Feng, Gan
|
|
2009
|
213-214 |
23-24 |
p. 4745-4748
4 p.
|
artikel
|
| 23 |
Charge carrier removal rates in n-type silicon and silicon carbide subjected to electron and proton irradiation
|
Kozlovski, V.V.
|
|
2009
|
213-214 |
23-24 |
p. 4752-4754
3 p.
|
artikel
|
| 24 |
Charge carrier scattering on the short-range potential of the crystal lattice defects in ZnCdTe, ZnHgSe and ZnHgTe
|
Malyk, Orest P.
|
|
2009
|
213-214 |
23-24 |
p. 5022-5024
3 p.
|
artikel
|
| 25 |
Charge transfer through localized defect states with no change in on-site total spin and population
|
Mashkov, V.A.
|
|
2009
|
213-214 |
23-24 |
p. 5212-5214
3 p.
|
artikel
|
| 26 |
Charge trapping effects in photovoltage measurements of (Ga,Mn)As
|
Granville, S.
|
|
2008
|
213-214 |
23-24 |
p. 4288-4291
4 p.
|
artikel
|
| 27 |
Colossal magnetocapacitive effect in differently synthesized and doped CdCr2S4
|
Krohns, S.
|
|
2008
|
213-214 |
23-24 |
p. 4224-4227
4 p.
|
artikel
|
| 28 |
Comparative mid- and far-infrared spectroscopy of nitrogen–oxygen complexes in silicon
|
Alt, H.Ch.
|
|
2009
|
213-214 |
23-24 |
p. 4549-4551
3 p.
|
artikel
|
| 29 |
Comparison of electron irradiation effects on diodes fabricated on silicon and on germanium doped silicon substrates
|
Ohyama, H.
|
|
2009
|
213-214 |
23-24 |
p. 4671-4673
3 p.
|
artikel
|
| 30 |
Compton scattering study of electron momentum distribution in lithium fluoride using 662keV gamma radiations
|
Vijayakumar, R.
|
|
2008
|
213-214 |
23-24 |
p. 4309-4313
5 p.
|
artikel
|
| 31 |
Computer simulation of some optical properties of one-dimensional photonic finite systems
(
Si
/
a
-
SiO
2
)
m
with defects
|
Timoshenko, Yu.K.
|
|
2009
|
213-214 |
23-24 |
p. 5207-5208
2 p.
|
artikel
|
| 32 |
Conference Organization
|
|
|
2009
|
213-214 |
23-24 |
p. v-vi
nvt p.
|
artikel
|
| 33 |
Conference Photograph
|
|
|
2009
|
213-214 |
23-24 |
p. xx-
1 p.
|
artikel
|
| 34 |
Contents
|
|
|
2009
|
213-214 |
23-24 |
p. vii-xviii
nvt p.
|
artikel
|
| 35 |
Control of impurity diffusion in silicon by IR laser excitation
|
Shirai, K.
|
|
2009
|
213-214 |
23-24 |
p. 4685-4688
4 p.
|
artikel
|
| 36 |
Deep centers in bulk AlN and their relation to low-angle dislocation boundaries
|
Polyakov, A.Y.
|
|
2009
|
213-214 |
23-24 |
p. 4939-4941
3 p.
|
artikel
|
| 37 |
Deep level defects in proton irradiated p-type Al0.5Ga0.5As
|
Szatkowski, J.
|
|
2009
|
213-214 |
23-24 |
p. 4967-4969
3 p.
|
artikel
|
| 38 |
Deep levels investigation of AlGaN/GaN heterostructure transistors
|
Chikhaoui, W.
|
|
2009
|
213-214 |
23-24 |
p. 4877-4879
3 p.
|
artikel
|
| 39 |
Deep level transient spectroscopy signatures of majority traps in GaN p–n diodes grown by metal-organic vapor-phase epitaxy technique on GaN substrates
|
PŁaczek-Popko, E.
|
|
2009
|
213-214 |
23-24 |
p. 4889-4891
3 p.
|
artikel
|
| 40 |
Deep-level transient spectroscopy studies of light-emitting diodes based on multiple-quantum-well InGaN/GaN structure
|
Sobolev, Mikhail M.
|
|
2009
|
213-214 |
23-24 |
p. 4907-4910
4 p.
|
artikel
|
| 41 |
Defect-induced polytype transformations in LPE grown SiC epilayers on (111) 3C-SiC seeds grown by VLS on 6H-SiC
|
Marinova, Maya
|
|
2009
|
213-214 |
23-24 |
p. 4727-4730
4 p.
|
artikel
|
| 42 |
Defect-level pinning and shallow states of the muonium isotope of hydrogen
|
Lichti, R.L.
|
|
2009
|
213-214 |
23-24 |
p. 5106-5109
4 p.
|
artikel
|
| 43 |
Defect-related photoluminescence in Mg-doped GaN nanostructures
|
Reshchikov, M.A.
|
|
2009
|
213-214 |
23-24 |
p. 4903-4906
4 p.
|
artikel
|
| 44 |
Defects in AlN: High-frequency EPR and ENDOR studies
|
Orlinskii, Sergei B.
|
|
2009
|
213-214 |
23-24 |
p. 4873-4876
4 p.
|
artikel
|
| 45 |
Defects in nanothin crystalline layers and multilayer structures formed of them
|
Goncharova, Olga
|
|
2009
|
213-214 |
23-24 |
p. 5185-5188
4 p.
|
artikel
|
| 46 |
Defects of Ge quantum dot arrays on the Si(001) surface
|
Yuryev, V.A.
|
|
2009
|
213-214 |
23-24 |
p. 4719-4722
4 p.
|
artikel
|
| 47 |
Defect structure of zinc doped silicon studied by X-ray diffuse scattering method
|
Shcherbachev, Kirill D.
|
|
2009
|
213-214 |
23-24 |
p. 4630-4633
4 p.
|
artikel
|
| 48 |
Dependence of mobility on shallow localized gap states in single-crystal organic field-effect-transistors
|
Butko, V.Y.
|
|
2009
|
213-214 |
23-24 |
p. 5221-5222
2 p.
|
artikel
|
| 49 |
Depth profile of donor–acceptor pair transition revealing its effect on the efficiency of green LEDs
|
Xia, Yong
|
|
2009
|
213-214 |
23-24 |
p. 4899-4902
4 p.
|
artikel
|
| 50 |
Detection and identification of nitrogen defects in nanodiamond as studied by EPR
|
Soltamova, A.A.
|
|
2009
|
213-214 |
23-24 |
p. 4518-4521
4 p.
|
artikel
|
| 51 |
Diffusion Al from implanted SiC layer
|
Aleksandrov, O.V.
|
|
2009
|
213-214 |
23-24 |
p. 4764-4767
4 p.
|
artikel
|
| 52 |
Dislocation luminescence and electrical properties of dislocation network produced by silicon direct wafer bonding
|
Bondarenko, Anton
|
|
2009
|
213-214 |
23-24 |
p. 4608-4611
4 p.
|
artikel
|
| 53 |
Dislocation photoluminescence in plastically deformed germanium
|
Shevchenko, S.A.
|
|
2009
|
213-214 |
23-24 |
p. 4540-4542
3 p.
|
artikel
|
| 54 |
DLTS study of the oxygen dimer formation kinetics in silicon
|
Yarykin, Nikolai
|
|
2009
|
213-214 |
23-24 |
p. 4576-4578
3 p.
|
artikel
|
| 55 |
Donor level of interstitial hydrogen in semiconductors: Deep level transient spectroscopy
|
Kolkovsky, Vl.
|
|
2009
|
213-214 |
23-24 |
p. 5080-5084
5 p.
|
artikel
|
| 56 |
Doped high-
T
c
superconductors under pressure
|
Orozco, S.
|
|
2008
|
213-214 |
23-24 |
p. 4209-4212
4 p.
|
artikel
|
| 57 |
Doping and segregation of impurity atoms in silicon nanowires
|
Fukata, N.
|
|
2009
|
213-214 |
23-24 |
p. 5200-5202
3 p.
|
artikel
|
| 58 |
Dynamical nuclear polarization by means of shallow donors in ZnO quantum dots
|
Baranov, Pavel G.
|
|
2009
|
213-214 |
23-24 |
p. 4779-4782
4 p.
|
artikel
|
| 59 |
Dynamic nuclear polarization of 29Si via spin S=1 centers in isotopically controlled silicon
|
Itahashi, T.
|
|
2009
|
213-214 |
23-24 |
p. 5054-5056
3 p.
|
artikel
|
| 60 |
EBIC investigations of defect distribution in ELOG GaN films
|
Yakimov, E.B.
|
|
2009
|
213-214 |
23-24 |
p. 4916-4918
3 p.
|
artikel
|
| 61 |
EDEPR of impurity centers embedded in silicon microcavities
|
Bagraev, N.T.
|
|
2009
|
213-214 |
23-24 |
p. 5140-5143
4 p.
|
artikel
|
| 62 |
Editorial Board
|
|
|
2009
|
213-214 |
23-24 |
p. IFC-
1 p.
|
artikel
|
| 63 |
Effect of Cr on the magnetic properties and microstructure of Nd2Fe14B/α-Fe nanocomposites
|
Wang, W.
|
|
2008
|
213-214 |
23-24 |
p. 4186-4188
3 p.
|
artikel
|
| 64 |
Effect of impurity potential range on a scaling behavior in the quantum Hall regime
|
Arapov, Yu.G.
|
|
2009
|
213-214 |
23-24 |
p. 5192-5195
4 p.
|
artikel
|
| 65 |
Effect of polyvinyl alcohol molecular weight and UV-photoactivation on the size of gold nanoparticle
|
Seoudi, R.
|
|
2008
|
213-214 |
23-24 |
p. 4236-4240
5 p.
|
artikel
|
| 66 |
Effects of Cu nanopowders addition on magnetic properties and corrosion resistance of sintered Nd–Fe–B magnets
|
Cui, X.G.
|
|
2008
|
213-214 |
23-24 |
p. 4182-4185
4 p.
|
artikel
|
| 67 |
Effects of germanium doping on the behavior of oxygen and carbon impurities and impurity-related complexes in Si
|
Londos, C.A.
|
|
2009
|
213-214 |
23-24 |
p. 4693-4697
5 p.
|
artikel
|
| 68 |
Effects of group-V impurities on the elastic properties of silicon
|
Santen, Nicole
|
|
2009
|
213-214 |
23-24 |
p. 4622-4625
4 p.
|
artikel
|
| 69 |
Effects of irradiation induced lattice defects on standard trench and fine pattern trench IGBT characteristics
|
Nakabayashi, M.
|
|
2009
|
213-214 |
23-24 |
p. 4674-4677
4 p.
|
artikel
|
| 70 |
Electrical and electrothermal transport in InN: The roles of defects
|
Miller, N.
|
|
2009
|
213-214 |
23-24 |
p. 4862-4865
4 p.
|
artikel
|
| 71 |
Electrically detected magnetic resonance of phosphorous due to spin dependent recombination with triplet centers in γ-irradiated silicon
|
Akhtar, W.
|
|
2009
|
213-214 |
23-24 |
p. 4583-4585
3 p.
|
artikel
|
| 72 |
Electrical properties and deep traps spectra in AlGaN films with nitrogen and gallium polarities prepared by molecular beam epitaxy
|
Protasov, D.Yu.
|
|
2009
|
213-214 |
23-24 |
p. 4870-4872
3 p.
|
artikel
|
| 73 |
Electron and molecular processes on the surface of wide-bandgap oxides induced by photoexcitation of point defects
|
Lisachenko, A.A.
|
|
2009
|
213-214 |
23-24 |
p. 4842-4845
4 p.
|
artikel
|
| 74 |
Electronic structure and magnetic state of
InCNi
3
|
Wu, S.Q.
|
|
2008
|
213-214 |
23-24 |
p. 4232-4235
4 p.
|
artikel
|
| 75 |
Electronic structure of diluted magnetic semiconductors Pb1−
x
−
y
Sn
x
Cr
y
Te
|
Skipetrov, E.P.
|
|
2009
|
213-214 |
23-24 |
p. 5255-5258
4 p.
|
artikel
|
| 76 |
Electronic structure of oxygen vacancy in crystalline InGaO3(ZnO)
m
|
Lee, W.-J.
|
|
2009
|
213-214 |
23-24 |
p. 4794-4796
3 p.
|
artikel
|
| 77 |
Electron paramagnetic resonance and dynamic nuclear polarization of 29Si nuclei in lithium-doped silicon
|
Rahman, M.R.
|
|
2009
|
213-214 |
23-24 |
p. 5060-5062
3 p.
|
artikel
|
| 78 |
Electron paramagnetic resonance spectroscopy of lithium donors in monoisotopic silicon
|
Ezhevskii, Alexandr A.
|
|
2009
|
213-214 |
23-24 |
p. 5063-5065
3 p.
|
artikel
|
| 79 |
Electron spin resonance of light holes in porous silicon
|
Gorelkinski, Yu.V.
|
|
2009
|
213-214 |
23-24 |
p. 4590-4592
3 p.
|
artikel
|
| 80 |
Electron spin resonance of palladium-related defect in silicon
|
Ishiyama, T.
|
|
2009
|
213-214 |
23-24 |
p. 4586-4589
4 p.
|
artikel
|
| 81 |
Emission spectra of LiYNbO3:RE3+ (=Sm3+ or Dy3+) ceramic powders
|
Bhaskar Kumar, G.
|
|
2008
|
213-214 |
23-24 |
p. 4164-4170
7 p.
|
artikel
|
| 82 |
Energy state distributions at oxide–semiconductor interfaces investigated by Laplace DLTS
|
Dobaczewski, L.
|
|
2009
|
213-214 |
23-24 |
p. 4604-4607
4 p.
|
artikel
|
| 83 |
EPR, ESE and pulsed ENDOR study of the nitrogen donor pairs on quasi-cubic lattice sites in 6H SiC
|
Savchenko, D.V.
|
|
2009
|
213-214 |
23-24 |
p. 4735-4738
4 p.
|
artikel
|
| 84 |
EPR identification of intrinsic and transition metal-related defects in ZnGeP2 and other II–IV–V2 compounds
|
Gehlhoff, W.
|
|
2009
|
213-214 |
23-24 |
p. 4942-4948
7 p.
|
artikel
|
| 85 |
Evaluation of the crystalline quality of β-Ga2O3 films by optical absorption measurements
|
Takakura, K.
|
|
2009
|
213-214 |
23-24 |
p. 4854-4857
4 p.
|
artikel
|
| 86 |
Evidence for a shallow muonium acceptor state in Ge-rich
Cz-Si
1
-
x
Ge
x
|
Carroll, B.R.
|
|
2009
|
213-214 |
23-24 |
p. 5113-5116
4 p.
|
artikel
|
| 87 |
Evidence of the correlation between a strong 4d-As/2p-N orbitals coupling and the bowing effect in GaAsN
|
Mehnane, Noureddine
|
|
2008
|
213-214 |
23-24 |
p. 4281-4287
7 p.
|
artikel
|
| 88 |
Evidence of trapping levels and photoelectric properties of Cu3BiS3 thin films
|
Mesa, F.
|
|
2009
|
213-214 |
23-24 |
p. 5227-5230
4 p.
|
artikel
|
| 89 |
Exchange coupled pairs of dangling bond spins as a new type of paramagnetic defects in nanodiamonds
|
Osipov, V. Yu.
|
|
2009
|
213-214 |
23-24 |
p. 4522-4524
3 p.
|
artikel
|
| 90 |
Experimental and theoretical study of the thermal solubility of the vacancy in germanium
|
Vanhellemont, J.
|
|
2009
|
213-214 |
23-24 |
p. 4529-4532
4 p.
|
artikel
|
| 91 |
Fabrication of low-resistive p-type Al–N co-doped zinc oxide thin films by RF reactive magnetron sputtering
|
Lu, Hsin-Chun
|
|
2009
|
213-214 |
23-24 |
p. 4846-4849
4 p.
|
artikel
|
| 92 |
Far-action radiation defects and gettering effects in 6H-SiC irradiated with Bi ions
|
Shustov, D.
|
|
2009
|
213-214 |
23-24 |
p. 4761-4763
3 p.
|
artikel
|
| 93 |
First-principles calculations of zone-center phonons in CsB3O5: Comparison with experiment
|
Wang, Hui
|
|
2008
|
213-214 |
23-24 |
p. 4189-4195
7 p.
|
artikel
|
| 94 |
First-principles investigation of Mg2TH
y
(T=Ni, Co, Fe) complex hydrides
|
Zhang, J.
|
|
2008
|
213-214 |
23-24 |
p. 4217-4223
7 p.
|
artikel
|
| 95 |
First-principles material design and perspective on semiconductor spintronics materials
|
Sato, K.
|
|
2009
|
213-214 |
23-24 |
p. 5237-5243
7 p.
|
artikel
|
| 96 |
Formation of Frenkel pairs and diffusion of self-interstitial in Si under normal and hydrostatic pressure: Quantumchemical simulation
|
Gusakov, Vasilii
|
|
2009
|
213-214 |
23-24 |
p. 4558-4560
3 p.
|
artikel
|
| 97 |
Formation of nonuniformity in ZnSe/ZnMgSSe quantum well structures during MOVPE on GaAs(001) misoriented by 10° to (111)A plane
|
Kozlovsky, V.I.
|
|
2009
|
213-214 |
23-24 |
p. 5009-5012
4 p.
|
artikel
|
| 98 |
Formation of vacancy and oxygen containing complexes in Cz-Si by rapid thermal annealing
|
Akhmetov, V.
|
|
2009
|
213-214 |
23-24 |
p. 4572-4575
4 p.
|
artikel
|
| 99 |
Glass transition in As10Se90 chalcogenide glass: A kinetic study
|
Elabbar, Abdalla A.
|
|
2008
|
213-214 |
23-24 |
p. 4328-4332
5 p.
|
artikel
|
| 100 |
Grown-in defects in heavily phosphorus-doped Czochralski silicon
|
Zeng, Yuheng
|
|
2009
|
213-214 |
23-24 |
p. 4619-4621
3 p.
|
artikel
|
| 101 |
Growth, XRD and dielectric properties of triglycine sulpho-phosphate (TGSP) crystals added with magnesium sulfate
|
Selvarajan, P.
|
|
2008
|
213-214 |
23-24 |
p. 4205-4208
4 p.
|
artikel
|
| 102 |
Hall and thermoelectric evaluation of p-type InAs
|
Wagener, M.C.
|
|
2009
|
213-214 |
23-24 |
p. 5038-5041
4 p.
|
artikel
|
| 103 |
Hanle effect and spin-dependent recombination at deep centers in GaAsN
|
Kalevich, V.K.
|
|
2009
|
213-214 |
23-24 |
p. 4929-4932
4 p.
|
artikel
|
| 104 |
High-resolution spectroscopy and time-resolved study of electroluminescence of Er-1 center in silicon
|
Kudryavtsev, K.E.
|
|
2009
|
213-214 |
23-24 |
p. 4593-4596
4 p.
|
artikel
|
| 105 |
High temperature antistructure disorder in undoped ZnS
|
Lott, K.
|
|
2009
|
213-214 |
23-24 |
p. 5006-5008
3 p.
|
artikel
|
| 106 |
Homogenization of CZ Si wafers by Tabula Rasa annealing
|
Meduňa, M.
|
|
2009
|
213-214 |
23-24 |
p. 4637-4640
4 p.
|
artikel
|
| 107 |
Hydrogenic donor impurity in parallel-triangular quantum wires: Hydrostatic pressure and applied electric field effects
|
Restrepo, R.L.
|
|
2009
|
213-214 |
23-24 |
p. 5163-5166
4 p.
|
artikel
|
| 108 |
Hydrogenic impurity binding energy in vertically coupled
Ga
1
-
x
Al
x
As
quantum-dots under hydrostatic pressure and applied electric field
|
Duque, C.M.
|
|
2009
|
213-214 |
23-24 |
p. 5177-5180
4 p.
|
artikel
|
| 109 |
Hydrogen in ZnO
|
Lavrov, E.V.
|
|
2009
|
213-214 |
23-24 |
p. 5075-5079
5 p.
|
artikel
|
| 110 |
Hydrogen ion drift in Sb-doped Ge Schottky diodes
|
Bollmann, J.
|
|
2009
|
213-214 |
23-24 |
p. 5099-5101
3 p.
|
artikel
|
| 111 |
Hyperfine spectroscopy and characterization of muonium in ZnGeP2
|
Mengyan, P.W.
|
|
2009
|
213-214 |
23-24 |
p. 5121-5124
4 p.
|
artikel
|
| 112 |
Identification of the weak features in N 1s near-edge X-ray absorption fine structure of N2O multilayer
|
Wu, Tai-Quan
|
|
2008
|
213-214 |
23-24 |
p. 4151-4155
5 p.
|
artikel
|
| 113 |
IFC (Ed. Board)
|
|
|
2008
|
213-214 |
23-24 |
p. IFC-
1 p.
|
artikel
|
| 114 |
Imaging charge transport and dislocation networks in ordered GaInP
|
Haegel, Nancy M.
|
|
2009
|
213-214 |
23-24 |
p. 4963-4966
4 p.
|
artikel
|
| 115 |
Imaging minority carrier diffusion in GaN nanowires using near field optical microscopy
|
Baird, Lee
|
|
2009
|
213-214 |
23-24 |
p. 4933-4936
4 p.
|
artikel
|
| 116 |
Impact of silicon substrate germanium doping on diode characteristics and on thermal donor formation
|
Rafí, J.M.
|
|
2009
|
213-214 |
23-24 |
p. 4723-4726
4 p.
|
artikel
|
| 117 |
Improved AMOLED with aligned poly-Si thin-film transistors by laser annealing and chemical solution treatments
|
Wu, G.M.
|
|
2009
|
213-214 |
23-24 |
p. 4649-4652
4 p.
|
artikel
|
| 118 |
Impurity photoconductivity in strained p-InGaAs/GaAsP heterostructures
|
Aleshkin, V.Ya.
|
|
2009
|
213-214 |
23-24 |
p. 4974-4976
3 p.
|
artikel
|
| 119 |
Influence of defects on charge and energy transfer in layered crystals
|
Abdullayev, N.A.
|
|
2009
|
213-214 |
23-24 |
p. 5215-5217
3 p.
|
artikel
|
| 120 |
Influence of Ge nanocrystals and radiation defects on C–V characteristics in Si-MOS structures
|
Levy, Shai
|
|
2009
|
213-214 |
23-24 |
p. 5189-5191
3 p.
|
artikel
|
| 121 |
Influence of irradiation by neutrons on the properties of p+–n–n+ Si radiation detectors
|
Kalendra, Vidmantas
|
|
2009
|
213-214 |
23-24 |
p. 4664-4666
3 p.
|
artikel
|
| 122 |
Influence of the defect density (twins boundaries) on electrical parameters of 3C-SiC epitaxial films
|
Lebedev, Alexander A.
|
|
2009
|
213-214 |
23-24 |
p. 4758-4760
3 p.
|
artikel
|
| 123 |
Influence of the thermal annealing temperature of the channel layers grown at room temperature on the device performance in the ZnO thin-film-transistors
|
Ahn, Cheol Hyoun
|
|
2009
|
213-214 |
23-24 |
p. 4835-4838
4 p.
|
artikel
|
| 124 |
Interstitial-related defect reactions in electron-irradiated oxygen-rich Ge crystals: A DLTS study
|
Markevich, V.P.
|
|
2009
|
213-214 |
23-24 |
p. 4533-4536
4 p.
|
artikel
|
| 125 |
Intrinsic and defect-related luminescence of NiO
|
Mochizuki, Shosuke
|
|
2009
|
213-214 |
23-24 |
p. 4850-4853
4 p.
|
artikel
|
| 126 |
Intrinsic defects in CdTe and CdZnTe alloys
|
Carvalho, A.
|
|
2009
|
213-214 |
23-24 |
p. 5019-5021
3 p.
|
artikel
|
| 127 |
IR characterization of hydrogen in crystalline silicon solar cells
|
Stavola, M.
|
|
2009
|
213-214 |
23-24 |
p. 5066-5070
5 p.
|
artikel
|
| 128 |
Iron diffusion in silicon under external stress
|
Suzuki, K.
|
|
2009
|
213-214 |
23-24 |
p. 4678-4680
3 p.
|
artikel
|
| 129 |
Iron–oxygen interaction in silicon: A combined XBIC/XRF-EBIC-DLTS study of precipitation and complex building
|
Trushin, M.
|
|
2009
|
213-214 |
23-24 |
p. 4645-4648
4 p.
|
artikel
|
| 130 |
Isotope study of far IR absorption of bistable centers in hydrogen-implanted silicon
|
Isova, Ainur T.
|
|
2009
|
213-214 |
23-24 |
p. 5089-5092
4 p.
|
artikel
|
| 131 |
Isotopic effects in photoconductivity spectrum of impurities in silicon
|
Andreev, Boris A.
|
|
2009
|
213-214 |
23-24 |
p. 5057-5059
3 p.
|
artikel
|
| 132 |
Isotopic fingerprints of gold-containing luminescence centers in 28Si
|
Steger, M.
|
|
2009
|
213-214 |
23-24 |
p. 5050-5053
4 p.
|
artikel
|
| 133 |
Kinetics of reverse resistance recovery of silicon diodes: The role of the distance the metallurgical p+n-junction-defect layer formed by 250MeV krypton implantation
|
Poklonski, N.A.
|
|
2009
|
213-214 |
23-24 |
p. 4667-4670
4 p.
|
artikel
|
| 134 |
LaBi under high pressure and high temperature: A first-principle study
|
Driss Khodja, F.
|
|
2008
|
213-214 |
23-24 |
p. 4305-4308
4 p.
|
artikel
|
| 135 |
Laser-induced melting and recrystallization of CVD grown polycrystalline Si/SiGe/Ge layers
|
Gaiduk, P.I.
|
|
2009
|
213-214 |
23-24 |
p. 4708-4711
4 p.
|
artikel
|
| 136 |
Lattice dislocation in Si nanowires
|
Omar, M.S.
|
|
2009
|
213-214 |
23-24 |
p. 5203-5206
4 p.
|
artikel
|
| 137 |
Lattice location of the group V elements As and Sb in ZnO
|
Wahl, U.
|
|
2009
|
213-214 |
23-24 |
p. 4803-4806
4 p.
|
artikel
|
| 138 |
Linear and nonlinear optical properties of a hydrogenic donor in spherical quantum dots
|
Xie, Wenfang
|
|
2008
|
213-214 |
23-24 |
p. 4319-4322
4 p.
|
artikel
|
| 139 |
Li-related defects in ZnO: Hybrid functional calculations
|
Carvalho, A.
|
|
2009
|
213-214 |
23-24 |
p. 4797-4799
3 p.
|
artikel
|
| 140 |
Local cathodoluminescence study of defects in semiconductors and multilayer structures
|
Zamoryanskaya, M.V.
|
|
2009
|
213-214 |
23-24 |
p. 5042-5044
3 p.
|
artikel
|
| 141 |
Long-term room-temperature relaxation of the defects induced in (Hg,Cd)Te by low-energy ions
|
Izhnin, I.I.
|
|
2009
|
213-214 |
23-24 |
p. 5025-5027
3 p.
|
artikel
|
| 142 |
Long-wavelength limit of the static structure factors for mixtures of two simple molten salts with a common ion and generalized Bhatia–Thornton formalism: Molecular dynamics study of molten mixture Ag(Br0.7I0.3)
|
Bitrián, Vicente
|
|
2008
|
213-214 |
23-24 |
p. 4249-4258
10 p.
|
artikel
|
| 143 |
Long-wavelength optical phonons in single-walled boron nitride nanotubes
|
Zhang, Shengli
|
|
2008
|
213-214 |
23-24 |
p. 4196-4201
6 p.
|
artikel
|
| 144 |
Low temperature transport spectroscopy of defects using Schottky-barrier MOSFETs
|
Calvet, L.E.
|
|
2009
|
213-214 |
23-24 |
p. 5136-5139
4 p.
|
artikel
|
| 145 |
Low-threshold up-conversion luminescence in Zn
x
Cd1−
x
S with oxidized surface
|
Smirnov, Mikhail S.
|
|
2009
|
213-214 |
23-24 |
p. 5013-5015
3 p.
|
artikel
|
| 146 |
Magnetic characterization of ferrihydrite nanoparticles synthesized by hydrolysis of Fe metal-organic precursor
|
Lima Jr., E.
|
|
2008
|
213-214 |
23-24 |
p. 4156-4159
4 p.
|
artikel
|
| 147 |
Magnetic impurity behavior in the type II broken-gap p-GaInAsSb/p-InAs:Mn heterostructures with 2D-semimetal channel at the interface
|
Mikhailova, Maya P.
|
|
2009
|
213-214 |
23-24 |
p. 5247-5250
4 p.
|
artikel
|
| 148 |
Magnetic resonance spectroscopy of single centers in silicon quantum wells
|
Bagraev, Nikolay T.
|
|
2009
|
213-214 |
23-24 |
p. 5144-5147
4 p.
|
artikel
|
| 149 |
Manuscript received date
|
|
|
2009
|
213-214 |
23-24 |
p. iv-
1 p.
|
artikel
|
| 150 |
Massive point defect redistribution near semiconductor surfaces and interfaces and its impact on Schottky barrier formation
|
Brillson, L.J.
|
|
2009
|
213-214 |
23-24 |
p. 4768-4773
6 p.
|
artikel
|
| 151 |
Mechanisms of changes of hole concentration in Al-doped 6H-SiC by electron irradiation and annealing
|
Matsuura, Hideharu
|
|
2009
|
213-214 |
23-24 |
p. 4755-4757
3 p.
|
artikel
|
| 152 |
Microscopic observation of vacancy and self-interstitial and the formation of Frenkel pairs in InSb by Mössbauer spectroscopy
|
Sielemann, R.
|
|
2009
|
213-214 |
23-24 |
p. 5045-5049
5 p.
|
artikel
|
| 153 |
Microstructural and magnetic study of Fe-implanted 6H-SiC
|
Dupeyrat, C.
|
|
2009
|
213-214 |
23-24 |
p. 4731-4734
4 p.
|
artikel
|
| 154 |
Minority-carrier-enhanced dissociation of the boron–hydrogen pair in silicon
|
Yarykin, Nikolai
|
|
2009
|
213-214 |
23-24 |
p. 5093-5095
3 p.
|
artikel
|
| 155 |
Molecular dynamics study of the static structure of liquid Na–K alloys
|
Wax, J.-F.
|
|
2008
|
213-214 |
23-24 |
p. 4241-4248
8 p.
|
artikel
|
| 156 |
Morphological properties of laser irradiated Si/Ge multilayers
|
Gaiduk, P.I.
|
|
2009
|
213-214 |
23-24 |
p. 4701-4704
4 p.
|
artikel
|
| 157 |
Muonium as a probe of electron spin polarisation in CdTe
|
Alberto, H.V.
|
|
2009
|
213-214 |
23-24 |
p. 5110-5112
3 p.
|
artikel
|
| 158 |
Muonium in 4H silicon carbide
|
Celebi, Y.G.
|
|
2009
|
213-214 |
23-24 |
p. 5117-5120
4 p.
|
artikel
|
| 159 |
Nanoscale experimental study of a micro-crack in silicon
|
Zhao, C.W.
|
|
2008
|
213-214 |
23-24 |
p. 4202-4204
3 p.
|
artikel
|
| 160 |
Native point defects in ZnS films
|
Kurbatov, D.
|
|
2009
|
213-214 |
23-24 |
p. 5002-5005
4 p.
|
artikel
|
| 161 |
Ninth-order effective responses of nonlinear composites in external DC and AC electric fields
|
Natenapit, Mayuree
|
|
2008
|
213-214 |
23-24 |
p. 4314-4318
5 p.
|
artikel
|
| 162 |
Nitrogen and hydrogen in bulk single-crystal ZnO
|
Jokela, S.J.
|
|
2009
|
213-214 |
23-24 |
p. 4810-4812
3 p.
|
artikel
|
| 163 |
Non-equilibrium molecular-dynamics for impurities in semiconductors: Vibrational lifetimes and thermal conductivities
|
Estreicher, S.K.
|
|
2009
|
213-214 |
23-24 |
p. 4509-4514
6 p.
|
artikel
|
| 164 |
On diffusion of Cu in ZnO
|
Herklotz, F.
|
|
2009
|
213-214 |
23-24 |
p. 4807-4809
3 p.
|
artikel
|
| 165 |
One more deep level related to the metastable hydrogen-related defects in n-GaAs epilayers
|
Soltanovich, O.A.
|
|
2009
|
213-214 |
23-24 |
p. 5096-5098
3 p.
|
artikel
|
| 166 |
On quantum efficiency of photoluminescence in ZnO layers and nanostructures
|
Reshchikov, M.A.
|
|
2009
|
213-214 |
23-24 |
p. 4813-4815
3 p.
|
artikel
|
| 167 |
On the nature of defect states at interfaces of InAs/AlSb quantum wells
|
Vasilyev, Yu. B.
|
|
2009
|
213-214 |
23-24 |
p. 5150-5152
3 p.
|
artikel
|
| 168 |
On the oxygen vacancy in Co-doped ZnO thin films
|
Seghier, D.
|
|
2009
|
213-214 |
23-24 |
p. 4800-4802
3 p.
|
artikel
|
| 169 |
On the stretched-exponential decay kinetics of the ionized DX centers in gallium doped Cd1−
x
Mn
x
Te
|
Trzmiel, J.
|
|
2009
|
213-214 |
23-24 |
p. 5251-5254
4 p.
|
artikel
|
| 170 |
Optical and magneto-optical properties of thin Zn1−
x
Mn
x
O films doped by nitrogen
|
Pelenovich, V.O.
|
|
2009
|
213-214 |
23-24 |
p. 5266-5268
3 p.
|
artikel
|
| 171 |
Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells
|
Wagener, Viera
|
|
2009
|
213-214 |
23-24 |
p. 5167-5169
3 p.
|
artikel
|
| 172 |
Optical properties of Si/Si:Er multi-nanolayer structures grown by SMBE method
|
Ngoc Ha, Ngo
|
|
2009
|
213-214 |
23-24 |
p. 5132-5135
4 p.
|
artikel
|
| 173 |
Optical quenching of photoconductivity in Al
x
Ga1−
x
N epilayers
|
Seghier, D.
|
|
2009
|
213-214 |
23-24 |
p. 4880-4881
2 p.
|
artikel
|
| 174 |
Optical studies of
A
+
-centers in GaAs/AlGaAs quantum wells. Energy structure of the isolated centers, and their collective behavior
|
Petrov, P.V.
|
|
2009
|
213-214 |
23-24 |
p. 5148-5149
2 p.
|
artikel
|
| 175 |
Oxygen diffusion in Si1−
x
Ge
x
alloys
|
Khirunenko, L.I.
|
|
2009
|
213-214 |
23-24 |
p. 4698-4700
3 p.
|
artikel
|
| 176 |
Peculiarities of the spectroscopic properties of γ-La2(1−
x
)Nd2
x
S3 crystals caused by their structure imperfection
|
Abutalibov, G.I.
|
|
2009
|
213-214 |
23-24 |
p. 5223-5226
4 p.
|
artikel
|
| 177 |
Persistent photoconductivity of ZnO
|
Laiho, R.
|
|
2009
|
213-214 |
23-24 |
p. 4787-4790
4 p.
|
artikel
|
| 178 |
Phase composition of microdefects in heavily doped n-GaAs
|
Davletkildeev, N.A.
|
|
2009
|
213-214 |
23-24 |
p. 4988-4991
4 p.
|
artikel
|
| 179 |
Photo-induced spectral change in CeO2 and CeO2-based solid solution at room temperature
|
Mochizuki, Shosuke
|
|
2009
|
213-214 |
23-24 |
p. 4858-4861
4 p.
|
artikel
|
| 180 |
Photoluminescence energy transitions in
GaAs
–
Ga
1
-
x
Al
x
As
double quantum wells: Electric and magnetic fields and hydrostatic pressure effects
|
López, S.Y.
|
|
2009
|
213-214 |
23-24 |
p. 5181-5184
4 p.
|
artikel
|
| 181 |
Photoluminescence from triplet states of isoelectronic bound excitons at interstitial carbon-intersititial oxygen defects in silicon
|
Ishikawa, T.
|
|
2009
|
213-214 |
23-24 |
p. 4552-4554
3 p.
|
artikel
|
| 182 |
Photosensitivity of ZnO/CuIn3Se5 heterostructures at γ-radiation
|
Emtsev, V.V.
|
|
2009
|
213-214 |
23-24 |
p. 4839-4841
3 p.
|
artikel
|
| 183 |
Physical properties of copper oxide thin films prepared by dc reactive magnetron sputtering under different oxygen partial pressures
|
Chu, Chun-Lung
|
|
2009
|
213-214 |
23-24 |
p. 4831-4834
4 p.
|
artikel
|
| 184 |
Point defects generated by oxidation of silicon crystal surface
|
Suezawa, M.
|
|
2009
|
213-214 |
23-24 |
p. 5156-5158
3 p.
|
artikel
|
| 185 |
Point defects in ZnO: Electron paramagnetic resonance study
|
Vlasenko, Leonid S.
|
|
2009
|
213-214 |
23-24 |
p. 4774-4778
5 p.
|
artikel
|
| 186 |
Positron probing of gamma-irradiated Ge doped with P, As, Sb, and Bi: Changes in atomic structures of defects due to n→p conversion
|
Arutyunov, N.Yu.
|
|
2009
|
213-214 |
23-24 |
p. 5128-5131
4 p.
|
artikel
|
| 187 |
Positron states and annihilation in nanometric semiconducting superlattices
|
Sekkal, Nadir
|
|
2009
|
213-214 |
23-24 |
p. 5125-5127
3 p.
|
artikel
|
| 188 |
Preface
|
Bagraev, Nikolay T.
|
|
2009
|
213-214 |
23-24 |
p. xix-
1 p.
|
artikel
|
| 189 |
Pressure-induced electronic and structural phase transformation properties in half-metallic PmN: A first-principles approach
|
Pandit, Premlata
|
|
2008
|
213-214 |
23-24 |
p. 4333-4337
5 p.
|
artikel
|
| 190 |
Primary defect transformations in high-resistivity p-type silicon irradiated with electrons at cryogenic temperatures
|
Makarenko, L.F.
|
|
2009
|
213-214 |
23-24 |
p. 4561-4564
4 p.
|
artikel
|
| 191 |
Proceedings of the 25th International Conference on Defects in Semiconductors
|
|
|
2009
|
213-214 |
23-24 |
p. iii-
1 p.
|
artikel
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Quantitative evaluation of germanium displacement induced by arsenic implantation using germanium isotope superlattices
|
Kawamura, Yoko
|
|
2009
|
213-214 |
23-24 |
p. 4546-4548
3 p.
|
artikel
|
| 193 |
Quantum cascade laser design based on impurity–band transitions of donors in Si/GeSi(111) heterostructures
|
Bekin, N.A.
|
|
2009
|
213-214 |
23-24 |
p. 4716-4718
3 p.
|
artikel
|
| 194 |
Quantum-limit anisotropic magnetoresistance of semiconducting n-BiSb alloys
|
Redko, N.A.
|
|
2009
|
213-214 |
23-24 |
p. 5196-5199
4 p.
|
artikel
|
| 195 |
Radiation-induced deep levels in n-type GaAs grown by metal-organic chemical-vapor deposition
|
Naz, Nazir A.
|
|
2009
|
213-214 |
23-24 |
p. 4981-4983
3 p.
|
artikel
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Raman lasers due to scattering on donor electronic resonances in silicon
|
Pavlov, Sergey G.
|
|
2009
|
213-214 |
23-24 |
p. 4661-4663
3 p.
|
artikel
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Raman scattering on
H
2
in platelets in silicon
|
Lavrov, E.V.
|
|
2009
|
213-214 |
23-24 |
p. 5085-5088
4 p.
|
artikel
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Recent knowledge of strength and dislocation mobility in wide band-gap semiconductors
|
Yonenaga, I.
|
|
2009
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213-214 |
23-24 |
p. 4999-5001
3 p.
|
artikel
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Reduced photoluminescence from InGaN/GaN multiple quantum well structures following 40Mev iodine ion irradiation
|
Ali, M.
|
|
2009
|
213-214 |
23-24 |
p. 4925-4928
4 p.
|
artikel
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| 200 |
Relation between photocurrent and DLTS signals observed for quantum dot systems
|
Kruszewski, P.
|
|
2009
|
213-214 |
23-24 |
p. 5170-5172
3 p.
|
artikel
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Relaxation spectrum of the TlSbSe2 thin films
|
Deger, D.
|
|
2009
|
213-214 |
23-24 |
p. 5231-5233
3 p.
|
artikel
|
| 202 |
Role of the surface in the electrical and optical properties of GaN
|
Foussekis, M.
|
|
2009
|
213-214 |
23-24 |
p. 4892-4895
4 p.
|
artikel
|
| 203 |
Ruthenium related deep-level defects in n-type GaAs
|
Naz, Nazir A.
|
|
2009
|
213-214 |
23-24 |
p. 4956-4958
3 p.
|
artikel
|
| 204 |
Self-assembling conditions of 4C10Sn nanoclusters in Ge:(C, Sn)
|
Elyukhin, V.A.
|
|
2009
|
213-214 |
23-24 |
p. 4543-4545
3 p.
|
artikel
|
| 205 |
Self-assembling of isoelectronic impurity nanoclusters in III–V semiconductors
|
Elyukhin, V.A.
|
|
2009
|
213-214 |
23-24 |
p. 4992-4994
3 p.
|
artikel
|
| 206 |
Self-interstitials and related defects in irradiated silicon
|
Gorelkinskii, Yu.V.
|
|
2009
|
213-214 |
23-24 |
p. 4579-4582
4 p.
|
artikel
|
| 207 |
Shallow defects in Cu2ZnSnS4
|
Hönes, K.
|
|
2009
|
213-214 |
23-24 |
p. 4949-4952
4 p.
|
artikel
|
| 208 |
Shallow traps and the space-charged-induced limitation of the injection current in PbSnTe:In narrow-gap ferroelectric
|
Klimov, Alexander E.
|
|
2009
|
213-214 |
23-24 |
p. 5028-5031
4 p.
|
artikel
|
| 209 |
Silicon nanoclusters formation in silicon dioxide by high power density electron beam
|
Kolesnikova, E.V.
|
|
2009
|
213-214 |
23-24 |
p. 4653-4656
4 p.
|
artikel
|
| 210 |
Simultaneous effects of pressure and temperature on donor binding energy in Pöschl–Teller quantum well
|
Hakimyfard, Alireza
|
|
2009
|
213-214 |
23-24 |
p. 5159-5162
4 p.
|
artikel
|
| 211 |
Some features of a microdefect revealing in single-crystal silicon by the preferential etching technique
|
Usenka, Alexandra E.
|
|
2009
|
213-214 |
23-24 |
p. 4657-4660
4 p.
|
artikel
|
| 212 |
Spin-dependent recombination of defects in bulk ZnO crystals and ZnO nanocrystals as studied by optically detected magnetic resonance
|
Romanov, N.G.
|
|
2009
|
213-214 |
23-24 |
p. 4783-4786
4 p.
|
artikel
|
| 213 |
Spin-Peierls transition in the Ge:As semiconductor impurity system in the vicinity of the insulator–metal phase transition
|
Veinger, A.I.
|
|
2009
|
213-214 |
23-24 |
p. 4537-4539
3 p.
|
artikel
|
| 214 |
Stable In-defect complexes in GaN and AlN
|
Schmitz, J.
|
|
2009
|
213-214 |
23-24 |
p. 4866-4869
4 p.
|
artikel
|
| 215 |
Strain relaxation mechanism in the Si-SiO2 system and its influence on the interface properties
|
Kropman, D.
|
|
2009
|
213-214 |
23-24 |
p. 5153-5155
3 p.
|
artikel
|
| 216 |
Strange lifetimes of the vibrations of interstitial oxygen in SiGe alloys
|
Kohli, K.K.
|
|
2009
|
213-214 |
23-24 |
p. 4689-4692
4 p.
|
artikel
|
| 217 |
Stress-induced nanoislands nucleation during growth of Ge/Si heterostructures under low-energy ion irradiation
|
Smagina, J.V.
|
|
2009
|
213-214 |
23-24 |
p. 4712-4715
4 p.
|
artikel
|
| 218 |
Structural and electronic properties of carbon-doped c-BN(110) surface
|
Kökten, Hatice
|
|
2009
|
213-214 |
23-24 |
p. 4937-4938
2 p.
|
artikel
|
| 219 |
Structural characterization and electro-physical properties for SiOC(–H) low-k dielectric films
|
Zakirov, A.S.
|
|
2009
|
213-214 |
23-24 |
p. 5218-5220
3 p.
|
artikel
|
| 220 |
Structural distortions induced during stress relaxation affecting electrical transport of nanometer-thick La0.67(Ba,Ca)0.33MnO3 films
|
Serenkov, I.T.
|
|
2009
|
213-214 |
23-24 |
p. 5234-5236
3 p.
|
artikel
|
| 221 |
Structural distortions in nitrogen-doped GaP and GaAs
|
Parfenova, I.I.
|
|
2009
|
213-214 |
23-24 |
p. 4984-4987
4 p.
|
artikel
|
| 222 |
Structural peculiarities and photoluminescence of ZnGa2Se4 compound
|
Tagiyev, B.G.
|
|
2009
|
213-214 |
23-24 |
p. 4953-4955
3 p.
|
artikel
|
| 223 |
Structural study of low-temperature grown superlattices of GaAs with delta-layers of Sb and P
|
Baidakova, M.V.
|
|
2009
|
213-214 |
23-24 |
p. 4970-4973
4 p.
|
artikel
|
| 224 |
Studies on the optical, thermal and electrical properties of Bis(thiourea) cadmium formate NLO crystals
|
Ravi Kumar, S.M.
|
|
2008
|
213-214 |
23-24 |
p. 4160-4163
4 p.
|
artikel
|
| 225 |
Study of alloy disorder in (Hg,Cd)Te with the use of infrared photoluminescence
|
Ivanov-Omskii, V.I.
|
|
2009
|
213-214 |
23-24 |
p. 5035-5037
3 p.
|
artikel
|
| 226 |
Surface and bulk passivation of A3B5 layers by isovalent dopant diffusion from a localized source
|
Karlina, L.B.
|
|
2009
|
213-214 |
23-24 |
p. 4995-4998
4 p.
|
artikel
|
| 227 |
TEM observations in Si: An attempt to link deformation microstructures and electrical activity
|
Eyidi, D.
|
|
2009
|
213-214 |
23-24 |
p. 4634-4636
3 p.
|
artikel
|
| 228 |
Temperature and dose dependence of defect complex formation with ion implanted Mn/Fe in ZnO
|
Mølholt, T.E.
|
|
2009
|
213-214 |
23-24 |
p. 4820-4822
3 p.
|
artikel
|
| 229 |
The bound polaron in a polar slab of the semiconductor
|
Wang, Xiu-qing
|
|
2008
|
213-214 |
23-24 |
p. 4338-4341
4 p.
|
artikel
|
| 230 |
The electronic properties of the interface structure between ZnO and amorphous HfO2
|
Ryu, Byungki
|
|
2009
|
213-214 |
23-24 |
p. 4823-4826
4 p.
|
artikel
|
| 231 |
The electronic structure and ferromagnetism of TM (TM=V, Cr, and Mn)-doped BN(5,5) nanotube: A first-principles study
|
He, K.H.
|
|
2008
|
213-214 |
23-24 |
p. 4213-4216
4 p.
|
artikel
|
| 232 |
The features of electro-optical memory effect for 1.54μm electroluminescence of an Er doped Si diode
|
Andreev, B.A.
|
|
2009
|
213-214 |
23-24 |
p. 4597-4600
4 p.
|
artikel
|
| 233 |
The impurities of iron and cobalt in mercury selenide: Localization effects of hybridized electronic states in the temperature dependences of thermoelectric power
|
Lonchakov, A.T.
|
|
2009
|
213-214 |
23-24 |
p. 5259-5261
3 p.
|
artikel
|
| 234 |
The influence of sapphire substrate orientation on crystalline quality of GaN films grown by hydride vapor phase epitaxy
|
Govorkov, Anatolij
|
|
2009
|
213-214 |
23-24 |
p. 4919-4921
3 p.
|
artikel
|
| 235 |
The investigation of the structural and electrophysical properties of carbon nanotubes with controlled dopant and defect composition
|
Bolotov, Valeriy V.
|
|
2009
|
213-214 |
23-24 |
p. 5209-5211
3 p.
|
artikel
|
| 236 |
Theoretical prediction of structural and magnetic properties of small rhenium boride clusters
Re
m
B
n
(
m
=
1
–
3
,
n
=
1
–
3
m
)
|
Feng, Xiao-Juan
|
|
2008
|
213-214 |
23-24 |
p. 4323-4327
5 p.
|
artikel
|
| 237 |
Theoretical studies of the optical spectrum band positions and spin-Hamiltonian parameters for VO2+ ions in MgNH4PO6·6H2O crystal from three microscopic methods
|
Zheng, Wen-Chen
|
|
2008
|
213-214 |
23-24 |
p. 4171-4173
3 p.
|
artikel
|
| 238 |
The phase transition and the elastic and thermodynamic properties of AlN: First principles
|
Peng, Feng
|
|
2008
|
213-214 |
23-24 |
p. 4259-4263
5 p.
|
artikel
|
| 239 |
The photoluminescence of the thermo-treated silicon
|
Bolotov, Valeriy V.
|
|
2009
|
213-214 |
23-24 |
p. 4555-4557
3 p.
|
artikel
|
| 240 |
Thermal annealing behavior of deep levels in Rh-doped n-type MOVPE GaAs
|
Naz, Nazir A.
|
|
2009
|
213-214 |
23-24 |
p. 4959-4962
4 p.
|
artikel
|
| 241 |
Thermal annealing behaviour of deep levels in as-grown p-type MOCVD GaAs
|
Naz, Nazir A.
|
|
2009
|
213-214 |
23-24 |
p. 4977-4980
4 p.
|
artikel
|
| 242 |
Thermally induced defect photoluminescence in hydrogenated amorphous silicon upon intense interband pumping
|
Gusev, O.
|
|
2009
|
213-214 |
23-24 |
p. 5102-5105
4 p.
|
artikel
|
| 243 |
The structure, photoluminescence, optical and magnetic properties of ZnO films doped with ferromagnetic impurities
|
Gritskova, E.V.
|
|
2009
|
213-214 |
23-24 |
p. 4816-4819
4 p.
|
artikel
|
| 244 |
The wave–corpuscle duality of microscopic particles depicted by nonlinear Schrödinger equation
|
Xiao-Feng, Pang
|
|
2008
|
213-214 |
23-24 |
p. 4292-4300
9 p.
|
artikel
|
| 245 |
Trends on 3d transition metal impurities in diamond
|
Assali, L.V.C.
|
|
2009
|
213-214 |
23-24 |
p. 4515-4517
3 p.
|
artikel
|
| 246 |
Trivacancy in silicon: A combined DLTS and ab-initio modeling study
|
Markevich, V.P.
|
|
2009
|
213-214 |
23-24 |
p. 4565-4567
3 p.
|
artikel
|
| 247 |
Trivacancy-oxygen complex in silicon: Local vibrational mode characterization
|
Murin, L.I.
|
|
2009
|
213-214 |
23-24 |
p. 4568-4571
4 p.
|
artikel
|
| 248 |
Tunable beam direction and transmission of light using photonic crystal waveguide
|
Chen, Hongbo
|
|
2008
|
213-214 |
23-24 |
p. 4301-4304
4 p.
|
artikel
|
| 249 |
Two channels of non-radiative recombination in InGaN/GaN LEDs
|
Averkiev, N.S.
|
|
2009
|
213-214 |
23-24 |
p. 4896-4898
3 p.
|
artikel
|
| 250 |
Ultrafast reflectivity and electron dynamic properties of Tb0.27Dy0.73Fe2 thin films
|
Zhiqiang, Yang
|
|
2008
|
213-214 |
23-24 |
p. 4228-4231
4 p.
|
artikel
|
| 251 |
Vacancy clusters created via room temperature irradiation in 6H-SiC
|
Scholle, A.
|
|
2009
|
213-214 |
23-24 |
p. 4742-4744
3 p.
|
artikel
|
| 252 |
Vanadium-induced deep impurity level in Pb1−
x
Sn
x
Te
|
Skipetrov, E.P.
|
|
2009
|
213-214 |
23-24 |
p. 5262-5265
4 p.
|
artikel
|
| 253 |
XAFS studies of nickel-doped lead telluride
|
Radisavljević, Ivana
|
|
2009
|
213-214 |
23-24 |
p. 5032-5034
3 p.
|
artikel
|
| 254 |
X-ray diffraction on precipitates in Czochralski-grown silicon
|
Caha, O.
|
|
2009
|
213-214 |
23-24 |
p. 4626-4629
4 p.
|
artikel
|
| 255 |
ZnO nanocrystals/SiO2 multilayer structures fabricated by RF-magnetron sputtering
|
Pankratov, V.
|
|
2009
|
213-214 |
23-24 |
p. 4827-4830
4 p.
|
artikel
|
| 256 |
ZnSe based films characterization by cathodoluminescence
|
Shakhmin, Alexey A.
|
|
2009
|
213-214 |
23-24 |
p. 5016-5018
3 p.
|
artikel
|
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