Digital Library
Close Browse articles from a journal
 
<< previous    next >>
     Journal description
       All volumes of the corresponding journal
         All issues of the corresponding volume
           All articles of the corresponding issues
                                       Details for article 151 of 256 found articles
 
 
  Mechanisms of changes of hole concentration in Al-doped 6H-SiC by electron irradiation and annealing
 
 
Title: Mechanisms of changes of hole concentration in Al-doped 6H-SiC by electron irradiation and annealing
Author: Matsuura, Hideharu
Yanagisawa, Hideki
Nishino, Kozo
Myojin, Yoshiko
Nojiri, Takunori
Matsuyama, Yukei
Ohshima, Takeshi
Appeared in: Physica. B, Condensed matter
Paging: Volume 404 (2009) nr. 23-24 pages 3 p.
Year: 2009
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 151 of 256 found articles
 
<< previous    next >>
 
 Koninklijke Bibliotheek - National Library of the Netherlands