| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accumulation layer on p-Hg1−xCdxTe
|
Höschl, P.
|
|
1991
|
9 |
1-3 |
p. 213-216
4 p.
|
artikel
|
| 2 |
An investigation of the passivating effects of hydrogen sulphide on the GaAs(100) surface
|
Hughes, G.J.
|
|
1991
|
9 |
1-3 |
p. 37-41
5 p.
|
artikel
|
| 3 |
Application of thin film electroluminescent diodes and photoconducting elements in an optoelectronic memory system
|
Porada, Z.
|
|
1991
|
9 |
1-3 |
p. 383-385
3 p.
|
artikel
|
| 4 |
Applications and markets for semiconductor optoelectronic devices
|
Goodfellow, R.C.
|
|
1991
|
9 |
1-3 |
p. 1-7
7 p.
|
artikel
|
| 5 |
Author index of volume 9
|
|
|
1991
|
9 |
1-3 |
p. 387-388
2 p.
|
artikel
|
| 6 |
Can liquid-phase epitaxy still be useful for optoelectronic devices?
|
Thulke, Wolfgang
|
|
1991
|
9 |
1-3 |
p. 61-67
7 p.
|
artikel
|
| 7 |
Characterization of high temperature annealing of InP by scanning photoluminescence and capacitance-voltage measurements of metal/insulator/semiconductor devices
|
Tardy, J.
|
|
1991
|
9 |
1-3 |
p. 325-330
6 p.
|
artikel
|
| 8 |
Characterization of methylated amorphous silicon by IR and Raman spectroscopies
|
Huong, Pham V.
|
|
1991
|
9 |
1-3 |
p. 249-252
4 p.
|
artikel
|
| 9 |
Characterization of the GaAs/Si material grown by MOCVD for light emitting diodes
|
Brémond, G.
|
|
1991
|
9 |
1-3 |
p. 143-149
7 p.
|
artikel
|
| 10 |
Compensation uniformity of InP:Fe as probed by electron paramagnetic resonance
|
Boudart, B.
|
|
1991
|
9 |
1-3 |
p. 27-30
4 p.
|
artikel
|
| 11 |
Control of Zn(S, Se) composition using reflection high energy electron diffraction oscillations
|
Gaines, J.M.
|
|
1991
|
9 |
1-3 |
p. 201-205
5 p.
|
artikel
|
| 12 |
Dark currents in InAs x Sb y P1−(x+y)/InAs photodiodes for 2.5 μm operation
|
Telford, C.M.
|
|
1991
|
9 |
1-3 |
p. 371-374
4 p.
|
artikel
|
| 13 |
Dielectric response of strained GeSi superlattices: Theory and experiment
|
Schmid, U.
|
|
1991
|
9 |
1-3 |
p. 233-236
4 p.
|
artikel
|
| 14 |
Editorial Board
|
|
|
1991
|
9 |
1-3 |
p. iii-
1 p.
|
artikel
|
| 15 |
Electrical characterization of thermally grown native oxide on gallium antimonide
|
Basu, S.
|
|
1991
|
9 |
1-3 |
p. 47-50
4 p.
|
artikel
|
| 16 |
Electrical studies of the metal-vacuum-cleaved n-GaSb(110) interface: influence of crystal substrate and metal overlayer
|
Walters, S.A.
|
|
1991
|
9 |
1-3 |
p. 51-55
5 p.
|
artikel
|
| 17 |
Electroluminescence and photoluminescence from Si1−x Ge x alloys grown on (100) silicon by molecular beam epitaxy
|
Houghton, D.C.
|
|
1991
|
9 |
1-3 |
p. 237-244
8 p.
|
artikel
|
| 18 |
Electronic band structure of CdTe/CdZnTe heterostructures
|
Tuffigo, H.
|
|
1991
|
9 |
1-3 |
p. 185-188
4 p.
|
artikel
|
| 19 |
Electron spectroscopy study of the FeSi(111) and FeSi2Si(111) interface formation
|
Wallart, X.
|
|
1991
|
9 |
1-3 |
p. 253-257
5 p.
|
artikel
|
| 20 |
Exciton transitions and photovoltaic spectra in GaAs/AlGaAs multiple quantum wells
|
Ghezzi, C.
|
|
1991
|
9 |
1-3 |
p. 301-305
5 p.
|
artikel
|
| 21 |
Focused ion beam technology for optoelectronics
|
Gamo, Kenji
|
|
1991
|
9 |
1-3 |
p. 307-314
8 p.
|
artikel
|
| 22 |
GaAs wafers for direct use in epitaxy
|
Schwar, J.
|
|
1991
|
9 |
1-3 |
p. 23-25
3 p.
|
artikel
|
| 23 |
Growth and characterization of AlGaAs/GaAs Bragg reflectors for non-linear optoelectronic devices
|
Scheffer, F.
|
|
1991
|
9 |
1-3 |
p. 361-364
4 p.
|
artikel
|
| 24 |
Growth and characterization of low threshold, continuous-wave-operated ridge waveguide strained layer InGaAs/GaAs single-quantum-well lasers
|
Saint-Cricq, B.
|
|
1991
|
9 |
1-3 |
p. 351-354
4 p.
|
artikel
|
| 25 |
Growth and characterization of metal-organic vapour phase epitaxial Ga1−x In xAsySb1−y quaternary layers
|
Giani, A.
|
|
1991
|
9 |
1-3 |
p. 121-124
4 p.
|
artikel
|
| 26 |
Growth by molecular beam epitaxy of thick films of In x Ga1−x As (x ≈ 0.53) on Si(100) substrates
|
Westwood, D.I.
|
|
1991
|
9 |
1-3 |
p. 151-155
5 p.
|
artikel
|
| 27 |
Growth limitations by the miscibility gap in liquid phase epitaxy of Ga1−x In xAsySb1−y on GaSb
|
Lazzari, J.-L.
|
|
1991
|
9 |
1-3 |
p. 125-128
4 p.
|
artikel
|
| 28 |
Growth of GaAs/Ca0.45Sr0.55F2/GaAs structures by molecular beam epitaxy
|
Horng, S.
|
|
1991
|
9 |
1-3 |
p. 263-267
5 p.
|
artikel
|
| 29 |
Growth of InP crystals by the horizontal gradient freeze technique
|
Schäfer, N.
|
|
1991
|
9 |
1-3 |
p. 19-22
4 p.
|
artikel
|
| 30 |
Improved crystal growth processes for high quality III–V substrates
|
Fornari, Roberto
|
|
1991
|
9 |
1-3 |
p. 9-18
10 p.
|
artikel
|
| 31 |
Improvement of electrical properties of GaAs on silicon by hydrogenation using plasma-enhanced chemical vapour deposition of hydrogenated silicon nitride
|
Zou, G.
|
|
1991
|
9 |
1-3 |
p. 163-167
5 p.
|
artikel
|
| 32 |
Interaction of the p-type dopants Zn and Mg in epitaxial heterostructures for optoelectronic applications
|
Treichler, R.
|
|
1991
|
9 |
1-3 |
p. 337-340
4 p.
|
artikel
|
| 33 |
Internal strain and lattice deformation of molecular-beam-epitaxy-grown GaInAsSb on GaAs substrate
|
Bi, Wengang
|
|
1991
|
9 |
1-3 |
p. 157-161
5 p.
|
artikel
|
| 34 |
Large-area metal-organic vapour phase epitaxy for optoelectronic integrated circuits and photonics
|
Ougazzaden, A.
|
|
1991
|
9 |
1-3 |
p. 69-76
8 p.
|
artikel
|
| 35 |
Lateral growth on GaSb(111)B and GaSb(001) by metal-organic chemical vapour deposition
|
Bonnot, R.
|
|
1991
|
9 |
1-3 |
p. 101-104
4 p.
|
artikel
|
| 36 |
Lattice strain near the interface of ZnSe deposited by molecular beam epitaxy on GaAs
|
Imai, K.
|
|
1991
|
9 |
1-3 |
p. 221-224
4 p.
|
artikel
|
| 37 |
Making quantum wires and boxes for optoelectronic devices
|
Merz, J.L.
|
|
1991
|
9 |
1-3 |
p. 275-284
10 p.
|
artikel
|
| 38 |
Minority-carrier confinement by doping barriers
|
Rimmer, J.S.
|
|
1991
|
9 |
1-3 |
p. 375-378
4 p.
|
artikel
|
| 39 |
2.55 μm separated absorption multiplication avalanche photodiode based on antimonide compounds
|
Gouskov, L.
|
|
1991
|
9 |
1-3 |
p. 365-369
5 p.
|
artikel
|
| 40 |
N+-p diodes in InP formed by implantation of Ge+ or Se+ and rapid thermal annealing
|
Kringhøj, Per
|
|
1991
|
9 |
1-3 |
p. 315-318
4 p.
|
artikel
|
| 41 |
Open-tube zinc diffusion into indium phosphide under a hydrogen ambient: technique characterization, acceptor passivation and activation phenomena
|
Pellegrino, S.
|
|
1991
|
9 |
1-3 |
p. 341-344
4 p.
|
artikel
|
| 42 |
Optical characterization of indium-rich strained In1−x Ga xAs/InP single- and multiple-quantum-well structures
|
Schwedler, R.
|
|
1991
|
9 |
1-3 |
p. 297-300
4 p.
|
artikel
|
| 43 |
Optical investigations of surface and interface properties at III–V semiconductors
|
Schreiber, J.
|
|
1991
|
9 |
1-3 |
p. 31-35
5 p.
|
artikel
|
| 44 |
Optical waveguides formed by hydrogen passivation of dopant atoms in p-type GaAs:Si epilayers
|
Zavada, J.M.
|
|
1991
|
9 |
1-3 |
p. 379-382
4 p.
|
artikel
|
| 45 |
Optimization of surface condition during reactive ion etching of GaAs and Al x Ga1−x As
|
Din, Kuen-Sane
|
|
1991
|
9 |
1-3 |
p. 57-60
4 p.
|
artikel
|
| 46 |
Optoelectronic properties of poly(3-hexylthiophene) thin films
|
Marchant, S.
|
|
1991
|
9 |
1-3 |
p. 269-273
5 p.
|
artikel
|
| 47 |
Optoelectronics with II–VI and IV–VI compounds
|
Marfaing, Y.
|
|
1991
|
9 |
1-3 |
p. 169-177
9 p.
|
artikel
|
| 48 |
Photo-assisted molecular beam epitaxy of CdTeCdMnTe heterostructures
|
Bicknell-Tassius, R.N.
|
|
1991
|
9 |
1-3 |
p. 179-183
5 p.
|
artikel
|
| 49 |
Photoluminescence and electroreflectance of GeSi strained layer superlattices
|
Okumura, H.
|
|
1991
|
9 |
1-3 |
p. 245-248
4 p.
|
artikel
|
| 50 |
Photoluminescence and optically detected impact ionization studies of GaInAs/InP strained layer superlattices
|
Meyer, B.K.
|
|
1991
|
9 |
1-3 |
p. 293-296
4 p.
|
artikel
|
| 51 |
Photoluminescence from InP heavily ion-implanted with Mg+
|
Yamada, A.
|
|
1991
|
9 |
1-3 |
p. 319-323
5 p.
|
artikel
|
| 52 |
Potentially and challenge of metal-organic molecular beam epitaxy
|
Heinecke, H.
|
|
1991
|
9 |
1-3 |
p. 83-91
9 p.
|
artikel
|
| 53 |
Preface
|
|
|
1991
|
9 |
1-3 |
p. v-
1 p.
|
artikel
|
| 54 |
Preparation of compound semiconductor films by means of hydrogen plasma sputtering
|
Miyasato, Tatsuro
|
|
1991
|
9 |
1-3 |
p. 195-199
5 p.
|
artikel
|
| 55 |
Properties of anodic fluoride films on Hg1−xCdtxTe
|
Esquivias, I.
|
|
1991
|
9 |
1-3 |
p. 207-211
5 p.
|
artikel
|
| 56 |
Pulsed-electron-beam annealing of ion implanted GaAs
|
Alberts, H.W.
|
|
1991
|
9 |
1-3 |
p. 331-335
5 p.
|
artikel
|
| 57 |
Recent developments in relaxed and strained lattice mismatched heterostructures
|
Demeester, P.
|
|
1991
|
9 |
1-3 |
p. 129-136
8 p.
|
artikel
|
| 58 |
Role of molecular beam epitaxy in the optoelectronic field
|
Meier, H.P.
|
|
1991
|
9 |
1-3 |
p. 77-81
5 p.
|
artikel
|
| 59 |
Selective area growth for opto-electronic integrated circuits (OEICs)
|
Davies, G.J.
|
|
1991
|
9 |
1-3 |
p. 93-100
8 p.
|
artikel
|
| 60 |
SiGe alloys and superlattices for optoelectronics
|
Pearsall, T.P.
|
|
1991
|
9 |
1-3 |
p. 225-231
7 p.
|
artikel
|
| 61 |
Sponsors
|
|
|
1991
|
9 |
1-3 |
p. viii-
1 p.
|
artikel
|
| 62 |
Stacking fault pyramids, island growth and misfit dislocations in In x Ga1−x As/InP heterostructures grown by vapour phase epitaxy
|
Frigeri, C.
|
|
1991
|
9 |
1-3 |
p. 115-119
5 p.
|
artikel
|
| 63 |
Study of the incorporation of oxygen in Ga1−x Al xAs prepared by MOVPE
|
Hanna Bakraji, E.
|
|
1991
|
9 |
1-3 |
p. 105-108
4 p.
|
artikel
|
| 64 |
Subject index of volume 9
|
|
|
1991
|
9 |
1-3 |
p. 389-396
8 p.
|
artikel
|
| 65 |
Sulphide passivation of GaAs: study of surface band bending
|
Berkovits, V.L.
|
|
1991
|
9 |
1-3 |
p. 43-46
4 p.
|
artikel
|
| 66 |
Symposium organization
|
|
|
1991
|
9 |
1-3 |
p. vii-
1 p.
|
artikel
|
| 67 |
Systematic observation of electro-optic effects in semiconductor superlattices
|
Campi, D.
|
|
1991
|
9 |
1-3 |
p. 289-292
4 p.
|
artikel
|
| 68 |
The consequences of dislocations and thermal degradation on the quality of InGaAsP/InP epitaxial layers
|
Sartorius, B.
|
|
1991
|
9 |
1-3 |
p. 109-113
5 p.
|
artikel
|
| 69 |
The fabrication of a novel composite GaAs/SiO2 nucleation layer on silicon for heteroepitaxial overgrowth by molecular beam epitaxy
|
de Boeck, J.
|
|
1991
|
9 |
1-3 |
p. 137-141
5 p.
|
artikel
|
| 70 |
The metal-organic vapour phase epitaxy growth of GaInAsP and GaAlInAs based graded refractive index separate confinement heterostructure multiple quantum well lasers incorporating linearly graded confinement layers
|
Carr, N.
|
|
1991
|
9 |
1-3 |
p. 355-360
6 p.
|
artikel
|
| 71 |
The state of optoelectronic device research in Eastern Europe
|
Bachert, H.
|
|
1991
|
9 |
1-3 |
p. 345-349
5 p.
|
artikel
|
| 72 |
Type II indirect and type I direct recombinations in GaAs/A1As single quantum wells
|
Holt, D.B.
|
|
1991
|
9 |
1-3 |
p. 285-288
4 p.
|
artikel
|
| 73 |
X-ray diffraction evidence for a ferroelectric phase transition in zinc cadmium telluride
|
Nkum, R.K.
|
|
1991
|
9 |
1-3 |
p. 217-219
3 p.
|
artikel
|
| 74 |
Zn3P2-a new material for optoelectronic devices
|
Misiewicz, J.
|
|
1991
|
9 |
1-3 |
p. 259-262
4 p.
|
artikel
|
| 75 |
ZnS/ZnSe/GaAs heterostructures grown by metal-organic vapour phase epitaxy
|
Heuken, M.
|
|
1991
|
9 |
1-3 |
p. 189-193
5 p.
|
artikel
|
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