| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparative Raman spectroscopy study on silicon surface in HF, HF/H2O2 and HF/NH4F aqueous solutions
|
Wang, Jing
|
|
2000
|
72 |
2-3 |
p. 193-196
4 p.
|
artikel
|
| 2 |
Adsorption of LiF on Si(111)-7×7 surface studied by scanning tunneling microscopy and low energy electron diffraction
|
Guo, Hansheng
|
|
2000
|
72 |
2-3 |
p. 160-163
4 p.
|
artikel
|
| 3 |
Atomic structure and electronic states of nickel and copper silicides in silicon
|
Schröter, W.
|
|
2000
|
72 |
2-3 |
p. 80-86
7 p.
|
artikel
|
| 4 |
Combinatorial ion synthesis and ion beam analyses of materials libraries on thermally grown SiO2
|
Chen, C.M
|
|
2000
|
72 |
2-3 |
p. 113-116
4 p.
|
artikel
|
| 5 |
Comparative analysis of the 1.54 μm emission of Er-doped Si/SiO2 films and the size distribution of the nanostructure
|
Fonseca, Luis F.
|
|
2000
|
72 |
2-3 |
p. 109-112
4 p.
|
artikel
|
| 6 |
Current trends in silicon defect technology
|
Bullis, W.Murray
|
|
2000
|
72 |
2-3 |
p. 93-98
6 p.
|
artikel
|
| 7 |
Defect reaction and its application to silicon materials technology
|
Sumino, Koji
|
|
2000
|
72 |
2-3 |
p. 67-72
6 p.
|
artikel
|
| 8 |
Diffusion, solubility and gettering of copper in silicon
|
Istratov, A.A
|
|
2000
|
72 |
2-3 |
p. 99-104
6 p.
|
artikel
|
| 9 |
Drift diffusion and hydrodynamic simulations of Si/SiGe p-MOSFETs
|
Zhao, Y.P
|
|
2000
|
72 |
2-3 |
p. 180-183
4 p.
|
artikel
|
| 10 |
Editorial
|
|
|
2000
|
72 |
2-3 |
p. V-
1 p.
|
artikel
|
| 11 |
Effects of forming cavities on the lattice quality and carrier profile in the B doped silicon
|
Wang, Shuangbao
|
|
2000
|
72 |
2-3 |
p. 142-145
4 p.
|
artikel
|
| 12 |
Effects of RF power and annealing on the electrical and structural properties of sputtered amorphous silicon carbide films
|
Choi, W.K.
|
|
2000
|
72 |
2-3 |
p. 132-134
3 p.
|
artikel
|
| 13 |
Formation of Si islands in the buried oxide layers of ultra-thin SIMOX structures implanted at 65 keV
|
Jiao, Jun
|
|
2000
|
72 |
2-3 |
p. 150-155
6 p.
|
artikel
|
| 14 |
Gap states and stability of rapidly deposited hydrogenated amorphous silicon films
|
Lin, S.H
|
|
2000
|
72 |
2-3 |
p. 197-199
3 p.
|
artikel
|
| 15 |
Gettering issues using MeV ion implantation
|
Rozgonyi, George A
|
|
2000
|
72 |
2-3 |
p. 87-92
6 p.
|
artikel
|
| 16 |
Heavily boron-doped Czochralski (CZ) silicon crystal growth: segregation and constitutional supercooling
|
Taishi, Toshinori
|
|
2000
|
72 |
2-3 |
p. 169-172
4 p.
|
artikel
|
| 17 |
Hydrogen catalyzed oxygen precipitation in crystalline silicon
|
Li, Huaixiang
|
|
2000
|
72 |
2-3 |
p. 105-108
4 p.
|
artikel
|
| 18 |
Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy
|
Wang, Qi-Yuan
|
|
2000
|
72 |
2-3 |
p. 189-192
4 p.
|
artikel
|
| 19 |
Index
|
|
|
2000
|
72 |
2-3 |
p. 201-202
2 p.
|
artikel
|
| 20 |
Index
|
|
|
2000
|
72 |
2-3 |
p. 203-206
4 p.
|
artikel
|
| 21 |
Infrared absorption of nitrogen–oxygen complex in silicon
|
Yang, Deren
|
|
2000
|
72 |
2-3 |
p. 121-123
3 p.
|
artikel
|
| 22 |
In situ observation of the Si melt–silica glass interface concerning CZ-Si crystal growth
|
Huang, Xinming
|
|
2000
|
72 |
2-3 |
p. 164-168
5 p.
|
artikel
|
| 23 |
Investigations on the morphology of silicon surfaces anisotropically etched with TMAH
|
Thong, J.T.L
|
|
2000
|
72 |
2-3 |
p. 177-179
3 p.
|
artikel
|
| 24 |
Local structure of erbium–oxygen complexes in erbium-doped silicon and its correlation with the optical activity of erbium
|
Pizzini, S
|
|
2000
|
72 |
2-3 |
p. 173-176
4 p.
|
artikel
|
| 25 |
Low temperature growth of β-FeSi2 thin films on Si(100) by pulsed laser deposition
|
Yoshitake, T
|
|
2000
|
72 |
2-3 |
p. 124-127
4 p.
|
artikel
|
| 26 |
Oxygen transportation during Czochralski silicon crystal growth
|
Hoshikawa, Keigo
|
|
2000
|
72 |
2-3 |
p. 73-79
7 p.
|
artikel
|
| 27 |
Photoluminescence characterization of defects created in electron-irradiated silicon at elevated temperatures
|
Buyanova, I.A
|
|
2000
|
72 |
2-3 |
p. 146-149
4 p.
|
artikel
|
| 28 |
Preparation of copper films by metal organic chemical vapor deposition on various substrates
|
Cho, Nam-Ihn
|
|
2000
|
72 |
2-3 |
p. 184-188
5 p.
|
artikel
|
| 29 |
Random telegraphic signals in rapid thermal annealed silicon–silicon oxide system
|
Chim, W.K
|
|
2000
|
72 |
2-3 |
p. 135-137
3 p.
|
artikel
|
| 30 |
Relation between electroluminescence and photoluminescence in porous silicon
|
Savir, E
|
|
2000
|
72 |
2-3 |
p. 138-141
4 p.
|
artikel
|
| 31 |
Synthesis and photoluminescence properties of semiconductor nanowires
|
Bai, Z.G
|
|
2000
|
72 |
2-3 |
p. 117-120
4 p.
|
artikel
|
| 32 |
Transition metal (thin-film)/Si (substrate) contacts: buried interface study by soft X-ray emission spectroscopy
|
Wang, Jinliang
|
|
2000
|
72 |
2-3 |
p. 156-159
4 p.
|
artikel
|
| 33 |
Verification of preoxidation effect on deposition of thin gate-quality silicon oxide films at low temperature by a sputtering-type ECR microwave plasma
|
Furukawa, Katsuhiko
|
|
2000
|
72 |
2-3 |
p. 128-131
4 p.
|
artikel
|
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