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                             64 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Annihilation and formation of electron traps in hydrogen-implanted n-type silicon by light illumination Tokuda, Yutaka
 2000
 71 1-3 p. 1-5
5 p.
 artikel
2 Atomistic simulation of ion implantation and its application in Si technology Posselt, Matthias
 2000
 71 1-3 p. 128-136
9 p.
 artikel
3 Beryllium diffusion in InGaAs/InGaAsP structures grown by gas source molecular beam epitaxy Koumetz, S.
 2000
 71 1-3 p. 171-174
4 p.
 artikel
4 Carbon influence on γ-irradiation induced defects in n-type CZ Si Vujičić, M
 2000
 71 1-3 p. 92-95
4 p.
 artikel
5 Characterization of the surfaces of hydrogen-passivated silicon by STM Herion, J
 2000
 71 1-3 p. 244-248
5 p.
 artikel
6 Cluster formation and growth in Si ion implanted c-Si Libertino, Sebania
 2000
 71 1-3 p. 137-142
6 p.
 artikel
7 Clustering of ultra-low-energy implanted boron in silicon during activation annealing Schroer, E
 2000
 71 1-3 p. 219-223
5 p.
 artikel
8 Comparison of electronic structure and properties of hydrogen-associated and thermal double donors in silicon Tokmoldin, S.Zh
 2000
 71 1-3 p. 263-267
5 p.
 artikel
9 Compensation origins in II–VI CZT materials Zumbiehl, A
 2000
 71 1-3 p. 297-300
4 p.
 artikel
10 Defect-related growth processes at an amorphous/crystalline interface: a molecular dynamics study Weber, B.
 2000
 71 1-3 p. 213-218
6 p.
 artikel
11 Defects and defect identification in group III-nitrides Meyer, B.K.
 2000
 71 1-3 p. 69-76
8 p.
 artikel
12 Defects in epitaxial SiGe-alloy layers Nylandsted Larsen, Arne
 2000
 71 1-3 p. 6-13
8 p.
 artikel
13 Dissociation of iron-related centers in Si stimulated by hydrogen Feklisova, O.V
 2000
 71 1-3 p. 268-271
4 p.
 artikel
14 Do we really understand dislocations in semiconductors? Jones, R.
 2000
 71 1-3 p. 24-29
6 p.
 artikel
15 Editorial 2000
 71 1-3 p. IX-
1 p.
 artikel
16 Effect of nitrogen ion impingement during molecular beam epitaxy growth of GaAs as a function of acceleration energy Fukuzawa, Yasuhiro
 2000
 71 1-3 p. 192-195
4 p.
 artikel
17 Effect of the Si wafer pretreatment on the patterned substrate morphology and growth of Hg1−x Cd x Te PLD films Gorbach, T.Ya
 2000
 71 1-3 p. 288-291
4 p.
 artikel
18 Effect of the transient enhanced diffusion of boron on the characteristics of sub-0.1 μm n-MOSFETS Kumashiro, S.
 2000
 71 1-3 p. 148-154
7 p.
 artikel
19 Effects of ion implantation on the electrical properties of Au/n-Si Schottky diodes Joo, M.H.
 2000
 71 1-3 p. 224-228
5 p.
 artikel
20 Effects of native defects on optical and electrical properties of ZnO prepared by pulsed laser deposition Jin, B.J.
 2000
 71 1-3 p. 301-305
5 p.
 artikel
21 Efficiency of cavity gettering in single and in multicrystalline silicon wafers Martinuzzi, S
 2000
 71 1-3 p. 229-232
4 p.
 artikel
22 Electron beam induced optical and electronical properties of SiO2 Fitting, H.-J
 2000
 71 1-3 p. 109-114
6 p.
 artikel
23 Electronic and transformation properties of a metastable defect introduced in epitaxially grown sulfur doped n-GaAs by particle irradiation Legodi, M.J
 2000
 71 1-3 p. 96-99
4 p.
 artikel
24 Evolution of vacancy-like defects in helium-implanted (100) silicon studied by thermal desorption spectrometry Corni, F
 2000
 71 1-3 p. 207-212
6 p.
 artikel
25 Formation and annealing of defects during high-temperature processing of ion-implanted epitaxial silicon: the role of dopant implants Giri, P.K
 2000
 71 1-3 p. 186-191
6 p.
 artikel
26 Formation and annihilation of oxygen donors in multicrystalline silicon for solar cells Häßler, C
 2000
 71 1-3 p. 39-46
8 p.
 artikel
27 Generation of interface states in α-SiC/SiO2 by electron injection Afanas’ev, V.V
 2000
 71 1-3 p. 309-314
6 p.
 artikel
28 Gettering of platinum by cavities induced in silicon by high energy implantation of HE ions Mariani-Regula, G
 2000
 71 1-3 p. 203-206
4 p.
 artikel
29 GISAXS study of defects in He implanted silicon Dubček, P
 2000
 71 1-3 p. 82-86
5 p.
 artikel
30 Gold and platinum profiles in fast power devices Boström, O
 2000
 71 1-3 p. 166-170
5 p.
 artikel
31 High resolution lifetime scan maps of silicon wafers Palais, O
 2000
 71 1-3 p. 47-50
4 p.
 artikel
32 Hydrogen and doping issues in wide band gap semiconductors Chevallier, J
 2000
 71 1-3 p. 62-68
7 p.
 artikel
33 Index 2000
 71 1-3 p. 335-340
6 p.
 artikel
34 Index 2000
 71 1-3 p. 333-334
2 p.
 artikel
35 Influence of surface deformation upon the properties of Cu-contacts on CdTe single crystals Ukrainets, V.O
 2000
 71 1-3 p. 306-308
3 p.
 artikel
36 Interaction of gold with dislocations in silicon Pichaud, B
 2000
 71 1-3 p. 272-275
4 p.
 artikel
37 Investigation of the solar cell emitter quality by LBIC-like image techniques Litvinenko, S
 2000
 71 1-3 p. 238-243
6 p.
 artikel
38 Large angle convergent beam electron diffraction strain measurements in high dose helium implanted silicon Gambetta, F
 2000
 71 1-3 p. 87-91
5 p.
 artikel
39 Leakage currents induced in ultrathin oxides on (100)Si by deep-UV photons Afanas’ev, V.V
 2000
 71 1-3 p. 56-61
6 p.
 artikel
40 Metallisation induced electron traps in epitaxially grown n-type GaN Auret, F.D.
 2000
 71 1-3 p. 77-81
5 p.
 artikel
41 Microscopic characterization of defects using scanning tunneling microscopy Stievenard, D
 2000
 71 1-3 p. 120-127
8 p.
 artikel
42 Microscopic defects in silicon induced by zinc out-diffusion Giese, A.
 2000
 71 1-3 p. 160-165
6 p.
 artikel
43 Modelisation of extended defects to simulate the transient enhanced diffusion of boron Lampin, E
 2000
 71 1-3 p. 155-159
5 p.
 artikel
44 New recombination centres in InP:Fe doped by neutron transmutation Hernández-Fenollosa, M.A
 2000
 71 1-3 p. 104-108
5 p.
 artikel
45 New (S=1) EPR AA17 center in silicon — microplatelets or precursor of platelets? Gorelkinskii, Yu.V
 2000
 71 1-3 p. 249-253
5 p.
 artikel
46 Nitrogen induced states at the CN x /Si interface Evangelou, E
 2000
 71 1-3 p. 315-320
6 p.
 artikel
47 Oxygen-related deep levels in oxygen doped EFG poly-Si Borjanović, V
 2000
 71 1-3 p. 292-296
5 p.
 artikel
48 Photostimulated transformation of defects in cadmium iodide with copper and coactivators Bondar, V
 2000
 71 1-3 p. 258-262
5 p.
 artikel
49 Polishing, chemical etching and thermal treatment effects on surface and electrical properties of Er and Nd-doped GaSb substrates Plaza, J.L
 2000
 71 1-3 p. 282-287
6 p.
 artikel
50 Properties of amorphous Si-rich silicon nitride prepared by rf-magnetron sputtering Vetter, M
 2000
 71 1-3 p. 321-326
6 p.
 artikel
51 Proximity gettering of platinum in silicon following implantation with alpha particles at low doses Schmidt, D.C
 2000
 71 1-3 p. 182-185
4 p.
 artikel
52 Quantitative optical variants of deep level transient spectroscopy: application to high purity germanium Blondeel, A
 2000
 71 1-3 p. 233-237
5 p.
 artikel
53 Radiation induced defects in MOVPE grown n-GaN Goodman, S.A
 2000
 71 1-3 p. 100-103
4 p.
 artikel
54 Relaxed SiGe buffer layer growth with point defect injection Lyutovich, K
 2000
 71 1-3 p. 14-19
6 p.
 artikel
55 Simulation of Al and phosphorus diffusion gettering in Si Kveder, V.
 2000
 71 1-3 p. 175-181
7 p.
 artikel
56 Si (001) surface defects after extended high temperature annealing Barge, D
 2000
 71 1-3 p. 276-281
6 p.
 artikel
57 Spatially resolved defect diagnostics in multicrystalline silicon for solar cells Tarasov, I
 2000
 71 1-3 p. 51-55
5 p.
 artikel
58 Strain relaxation of graded SiGe buffers grown at very high rates Rosenblad, C
 2000
 71 1-3 p. 20-23
4 p.
 artikel
59 Structural nature of the N2 RIE plasma induced slow states and bulk traps in thin SiO2 Si structures Paskaleva, A
 2000
 71 1-3 p. 115-119
5 p.
 artikel
60 Study of silver and copper diffusion in p-type Hg0.3Cd0.7Te and CdTe by capacitance measurements Wartlick, B.O.
 2000
 71 1-3 p. 254-257
4 p.
 artikel
61 TEM observations of dislocations in aluminium nitride after high temperature deformation Azzaz, M.
 2000
 71 1-3 p. 30-38
9 p.
 artikel
62 Thermal stability of defect complexes due to high dose MeV implantation in silicon Giri, P.K
 2000
 71 1-3 p. 327-332
6 p.
 artikel
63 Ultradense gas bubbles in hydrogen- or helium-implanted (or coimplanted) silicon Cerofolini, G.F.
 2000
 71 1-3 p. 196-202
7 p.
 artikel
64 Vacancy-related defects in ion implanted and electron irradiated silicon Peaker, A.R.
 2000
 71 1-3 p. 143-147
5 p.
 artikel
                             64 gevonden resultaten
 
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