| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accurate determination of the optical constants of absorbing thin films deposited on thick semitransparent substrates
|
Galibert, G.
|
|
1989
|
5 |
1 |
p. 37-42
6 p.
|
artikel
|
| 2 |
A transmission electron microscopy study of optically annealed ohmic contacts to GaAs using a Zirconium Diboride diffusion barrier
|
Grimshaw, M.P.
|
|
1989
|
5 |
1 |
p. 21-26
6 p.
|
artikel
|
| 3 |
Behaviour of lead borosilicate glass/alumina composite in the temperature range 900–1100°C
|
Kumar, K.P.
|
|
1989
|
5 |
1 |
p. 1-4
4 p.
|
artikel
|
| 4 |
Characterization of indium-doped liquid-encapsulated Czochralski GaP crystals by Birefringent method
|
Hsu, J.T.
|
|
1989
|
5 |
1 |
p. 73-79
7 p.
|
artikel
|
| 5 |
Correlation between photoluminescence and electrical local fluctuations in liquid encapsulated Czochralski semi-insulating GaAs substrates
|
Gillardin, G.
|
|
1989
|
5 |
1 |
p. 17-20
4 p.
|
artikel
|
| 6 |
Corrigendum
|
|
|
1989
|
5 |
1 |
p. 81-
1 p.
|
artikel
|
| 7 |
Editorial Board
|
|
|
1989
|
5 |
1 |
p. iii-
1 p.
|
artikel
|
| 8 |
High electron diffusion length silicon ribbons by plasma torch projection
|
Kayali, B.
|
|
1989
|
5 |
1 |
p. 51-56
6 p.
|
artikel
|
| 9 |
Measurement of mobility profile in GaAs MESFETs by Schottky barrier technique with gate current correction
|
Qi, Xiang
|
|
1989
|
5 |
1 |
p. 27-31
5 p.
|
artikel
|
| 10 |
Phase equilibria of GaNiAs at 600°C and the structural relationship between γ-Ni3Ga2, γ′-Ni13Ga9 and TNi3GaAs
|
Zheng, X.-Y.
|
|
1989
|
5 |
1 |
p. 63-72
10 p.
|
artikel
|
| 11 |
Phase transitions induced by helium irradiation in BiCaSrCuO superconductors
|
Ruault, M.O.
|
|
1989
|
5 |
1 |
p. 57-61
5 p.
|
artikel
|
| 12 |
Sintering behavior of niobium-and calcium-doped TiO2 ceramics
|
Chen, Chi-Jen
|
|
1989
|
5 |
1 |
p. 5-15
11 p.
|
artikel
|
| 13 |
Synthesis and physical study of LiTaO3-type flux-grown crystals
|
Ye, Z.G.
|
|
1989
|
5 |
1 |
p. 47-50
4 p.
|
artikel
|
| 14 |
Transport properties of the new perovskite-type LaVO 3⇔x N x Oxynitrides
|
Antoine, P.
|
|
1989
|
5 |
1 |
p. 43-46
4 p.
|
artikel
|
| 15 |
X-ray diffraction and dielectric studies of a BaTiO3: PVDF composite
|
Sekar, R.
|
|
1989
|
5 |
1 |
p. 33-36
4 p.
|
artikel
|
Tijdschrift beschrijving