| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A growth model for the carbonization of silicon surfaces
|
Cimalla, V.
|
|
1997
|
46 |
1-3 |
p. 199-202
4 p.
|
artikel
|
| 2 |
Amorphous carbon films rich in diamond deposited by magnetron sputtering
|
Logothetidis, S.
|
|
1997
|
46 |
1-3 |
p. 119-123
5 p.
|
artikel
|
| 3 |
Analysis of structural imperfections of silicon on insulator structures
|
Beghi, M.G.
|
|
1997
|
46 |
1-3 |
p. 20-23
4 p.
|
artikel
|
| 4 |
An investigation of 3C-SiC photoconductive power switching devices
|
Sheng, Senpeng
|
|
1997
|
46 |
1-3 |
p. 147-151
5 p.
|
artikel
|
| 5 |
A study of the contact potential difference in p-n 6H-SiC structures grown by various techniques
|
Lebedev, A.A.
|
|
1997
|
46 |
1-3 |
p. 271-274
4 p.
|
artikel
|
| 6 |
Capacitance transient studies of electron irradiated 4H-SiC
|
Hemmingsson, C.
|
|
1997
|
46 |
1-3 |
p. 336-339
4 p.
|
artikel
|
| 7 |
Characterization by atomic force microscopy of the SOI layer topography in low-dose SIMOX materials
|
Guilhalmenc, C.
|
|
1997
|
46 |
1-3 |
p. 29-32
4 p.
|
artikel
|
| 8 |
Characterization of 3C-SiC doped by nitrogen implantation
|
Lossy, R.
|
|
1997
|
46 |
1-3 |
p. 156-159
4 p.
|
artikel
|
| 9 |
Characterization Shottky barriers occurring at the metal-6H-SiC contact based on results of studies of current-voltage characteristics
|
Strel'chuk, Anatoly M.
|
|
1997
|
46 |
1-3 |
p. 379-382
4 p.
|
artikel
|
| 10 |
CN x thin films prepared by laser chemical vapor deposition
|
Falk, F.
|
|
1997
|
46 |
1-3 |
p. 89-91
3 p.
|
artikel
|
| 11 |
Comparison of the electrical and optical properties of 3C-SiC on SOI from different origin
|
Bluet, J.M.
|
|
1997
|
46 |
1-3 |
p. 152-155
4 p.
|
artikel
|
| 12 |
Continuity conditions at heterointerfaces and optimization conditions of buffer layers in SiC/Si
|
Masri, P.
|
|
1997
|
46 |
1-3 |
p. 195-198
4 p.
|
artikel
|
| 13 |
Control of SiC growth and graphitization in sublimation sandwich system
|
Karpova, S.Yu.
|
|
1997
|
46 |
1-3 |
p. 340-344
5 p.
|
artikel
|
| 14 |
Damage annealing and dopant activation in Al ion implanted α-SiC
|
Canut, B.
|
|
1997
|
46 |
1-3 |
p. 267-270
4 p.
|
artikel
|
| 15 |
Deep levels of chromium in 4H-SiC
|
Achtziger, Norbert
|
|
1997
|
46 |
1-3 |
p. 333-335
3 p.
|
artikel
|
| 16 |
Defect mapping in 4H-SiC wafers
|
Yakimova, R.
|
|
1997
|
46 |
1-3 |
p. 287-290
4 p.
|
artikel
|
| 17 |
Deposition of diamondlike carbon films by plasma enhanced chemical vapour deposition
|
Choi, Seong S.
|
|
1997
|
46 |
1-3 |
p. 133-136
4 p.
|
artikel
|
| 18 |
Different macroscopic approaches to the modelling of the sublimation growth of SiC single crystals
|
Pons, M.
|
|
1997
|
46 |
1-3 |
p. 308-312
5 p.
|
artikel
|
| 19 |
Diffusion of gold in 3C-SiC epitaxially grown on Si Structural characterization
|
Kornilios, N.
|
|
1997
|
46 |
1-3 |
p. 186-189
4 p.
|
artikel
|
| 20 |
EBIC investigation of defects in SOI materials using a Schottky diode and buried oxide capacitor
|
Duval, P.
|
|
1997
|
46 |
1-3 |
p. 38-42
5 p.
|
artikel
|
| 21 |
Effect of ion doping on the electrical and luminescent properties of 4H-SiC epitaxial p-n junctions
|
Kalinina, E.V.
|
|
1997
|
46 |
1-3 |
p. 259-262
4 p.
|
artikel
|
| 22 |
Electrical characteristics of GaN/6H-SiC n-p heterojunctions
|
Kuznetsov, N.I.
|
|
1997
|
46 |
1-3 |
p. 74-78
5 p.
|
artikel
|
| 23 |
Electrically and optically active molybdenum impurities in commercial SiC substrates
|
Baur, J.
|
|
1997
|
46 |
1-3 |
p. 313-316
4 p.
|
artikel
|
| 24 |
Electrical properties of oxides on silicon carbide grown by remote plasma chemical vapor deposition annealed in different gas ambients
|
Gölz, A.
|
|
1997
|
46 |
1-3 |
p. 363-365
3 p.
|
artikel
|
| 25 |
Fabrication of smooth β-SiC surfaces by reactive ion etching using a graphite electrode
|
Reichert, W.
|
|
1997
|
46 |
1-3 |
p. 190-194
5 p.
|
artikel
|
| 26 |
Film stress measurements for high temperature micromechanical and microelectronical applications based on SiC
|
Gottfried, K.
|
|
1997
|
46 |
1-3 |
p. 171-175
5 p.
|
artikel
|
| 27 |
Forewords
|
|
|
1997
|
46 |
1-3 |
p. ix-
1 p.
|
artikel
|
| 28 |
Fully depleted SOI-CMOS technology for high temperature IC applications
|
Gentinne, B.
|
|
1997
|
46 |
1-3 |
p. 1-7
7 p.
|
artikel
|
| 29 |
GaN based transistors for high temperature applications
|
Khan, M. Asif
|
|
1997
|
46 |
1-3 |
p. 69-73
5 p.
|
artikel
|
| 30 |
Growth and investigation of epitaxial 6H-SiC layers obtained by CVD on Lely-grown substrates
|
Zelenin, Viktor V.
|
|
1997
|
46 |
1-3 |
p. 300-303
4 p.
|
artikel
|
| 31 |
Growth and investigation of the big area Lely-grown substrates
|
Lebedeva, Alexander A.
|
|
1997
|
46 |
1-3 |
p. 291-295
5 p.
|
artikel
|
| 32 |
Growth of 4H-SiC from liquid phase
|
Syväjärvi, M.
|
|
1997
|
46 |
1-3 |
p. 329-332
4 p.
|
artikel
|
| 33 |
Growth of SiC ingots with high ratea
|
Dorozhkin, Sergei I.
|
|
1997
|
46 |
1-3 |
p. 296-299
4 p.
|
artikel
|
| 34 |
Growth of silicon carbide bulk crystals by the sublimation sandwich method
|
Mokhov, E.N.
|
|
1997
|
46 |
1-3 |
p. 317-323
7 p.
|
artikel
|
| 35 |
6H-3C SiC structures grown by sublimation epitaxy
|
Lebedev, Alexander A.
|
|
1997
|
46 |
1-3 |
p. 168-170
3 p.
|
artikel
|
| 36 |
High temperature electronics using SiC: actual situation and unsolved problems
|
Chelnokov, V.E.
|
|
1997
|
46 |
1-3 |
p. 248-253
6 p.
|
artikel
|
| 37 |
High temperature/high power Schottky diodes
|
Wright, N.G.
|
|
1997
|
46 |
1-3 |
p. 57-60
4 p.
|
artikel
|
| 38 |
High temperature ohmic contacts to 3C-SiC grown on Si substrates by chemical vapor deposition
|
Constantinidis, G.
|
|
1997
|
46 |
1-3 |
p. 176-179
4 p.
|
artikel
|
| 39 |
6H-SiC P-N structures with predominate exciton electroluminescence, obtained by sublimation epitaxy
|
Lebedev, A.A.
|
|
1997
|
46 |
1-3 |
p. 275-277
3 p.
|
artikel
|
| 40 |
III–V compounds for high-temperature operation
|
Hartnagel, Hans Ludwig
|
|
1997
|
46 |
1-3 |
p. 47-51
5 p.
|
artikel
|
| 41 |
Independent implant parameter effects on SIMOX SOI dislocation formation
|
Datta, R.
|
|
1997
|
46 |
1-3 |
p. 8-13
6 p.
|
artikel
|
| 42 |
Influence of growth conditions on the growth mode and layer structure in MBE-growth of SiC on SiC(0001)
|
Fissel, Andreas
|
|
1997
|
46 |
1-3 |
p. 324-328
5 p.
|
artikel
|
| 43 |
Influence of growth conditions on the structural perfection of β-SiC epitaxial layers fabricated on 6H-SiC substrates by vacuum sublimation
|
Andreev, A.N.
|
|
1997
|
46 |
1-3 |
p. 141-146
6 p.
|
artikel
|
| 44 |
Investigation of growth conditions for epitaxial growth of SiC on Si in the solid-source molecular beam epitaxy
|
Pfennighaus, K.
|
|
1997
|
46 |
1-3 |
p. 164-167
4 p.
|
artikel
|
| 45 |
Investigations of diamond-like carbon films produced directly from an ion beam of industrial ion source with a cold cathode
|
Enisherlova, K.L.
|
|
1997
|
46 |
1-3 |
p. 137-140
4 p.
|
artikel
|
| 46 |
Laser-assisted etching of diamonds in air and in liquid media
|
Shafeev, G.A.
|
|
1997
|
46 |
1-3 |
p. 129-132
4 p.
|
artikel
|
| 47 |
Long term stability of gate-oxides on n- and p-type silicon carbide studied by charge injection techniques
|
von Kamienski, E.G. Stein
|
|
1997
|
46 |
1-3 |
p. 263-266
4 p.
|
artikel
|
| 48 |
Luminescence determination of donor concentration in n-type 6H-SiC
|
D'yakonova, N.V.
|
|
1997
|
46 |
1-3 |
p. 304-307
4 p.
|
artikel
|
| 49 |
Metals on 6H-SiC: contact formation from the materials science point of view
|
Goesmann, Fred
|
|
1997
|
46 |
1-3 |
p. 357-362
6 p.
|
artikel
|
| 50 |
Micro-Raman study of thermoelastic stress distribution in oxidized silicon membranes and correlation with finite element modeling
|
Guyot, Y.
|
|
1997
|
46 |
1-3 |
p. 24-28
5 p.
|
artikel
|
| 51 |
Modes of propagating light waves in thin films of boron nitride deposited by plasma enhanced chemical vapor deposition
|
Boudiombo, J.
|
|
1997
|
46 |
1-3 |
p. 96-98
3 p.
|
artikel
|
| 52 |
Montecarlo simulation of ion implantation into SiC-6H single crystal including channeling effect
|
Morvan, E.
|
|
1997
|
46 |
1-3 |
p. 218-222
5 p.
|
artikel
|
| 53 |
Morphology and atomic structure of SiC(0001) surfaces: a UHV STM study
|
Kulakov, M.A.
|
|
1997
|
46 |
1-3 |
p. 227-230
4 p.
|
artikel
|
| 54 |
Nickel based ohmic contacts on SiC
|
Marinova, Ts.
|
|
1997
|
46 |
1-3 |
p. 223-226
4 p.
|
artikel
|
| 55 |
Nucleation of boron nitride on Ni(100) surfaces
|
Desrosiers, R.M.
|
|
1997
|
46 |
1-3 |
p. 84-88
5 p.
|
artikel
|
| 56 |
Observation of quantum Hall effect in 2D-electron gas confined in GaN/GaAlN heterostructure
|
Contreras, S.
|
|
1997
|
46 |
1-3 |
p. 92-95
4 p.
|
artikel
|
| 57 |
Ohmic contacts to n-type polycrystalline SiC for high-temperature micromechanical applications
|
Kriza, J.
|
|
1997
|
46 |
1-3 |
p. 180-185
6 p.
|
artikel
|
| 58 |
On the calculation of dielectric and optical properties of wide band gap semiconductors
|
Tikhonov, Sergey K.
|
|
1997
|
46 |
1-3 |
p. 99-100
2 p.
|
artikel
|
| 59 |
Optical and electrical properties of 2-dimensional electron gas in GaN/AlGaN heterostructures
|
Alause, H.
|
|
1997
|
46 |
1-3 |
p. 79-83
5 p.
|
artikel
|
| 60 |
Oxidation of clean and H-terminated SiC surfaces
|
van Eisbergen, Volker
|
|
1997
|
46 |
1-3 |
p. 366-369
4 p.
|
artikel
|
| 61 |
Periphery protection for silicon carbide devices: state of the art and simulation
|
Planson, D.
|
|
1997
|
46 |
1-3 |
p. 210-217
8 p.
|
artikel
|
| 62 |
Piezoresistivity of boron doped CVD diamond films
|
Boiko, Yu.
|
|
1997
|
46 |
1-3 |
p. 112-114
3 p.
|
artikel
|
| 63 |
Preparation of boron nitride thin films by microwave plasma enhanced CVD, for semiconductor applications
|
Baehr, O.
|
|
1997
|
46 |
1-3 |
p. 101-104
4 p.
|
artikel
|
| 64 |
Rapid plasma etching of cubic SiC using NF3/O2 gas mixtures
|
Richter, Christoph
|
|
1997
|
46 |
1-3 |
p. 160-163
4 p.
|
artikel
|
| 65 |
Reactive ion etching of 6H-SiC in an ECR plasma of CF4-O2 mixtures using both Ni and Al masks
|
Syrkin, Alexander L.
|
|
1997
|
46 |
1-3 |
p. 374-378
5 p.
|
artikel
|
| 66 |
Realization of silicon carbide sensors for measurements on gaseous working fluids
|
Ballandovich, V.S.
|
|
1997
|
46 |
1-3 |
p. 383-386
4 p.
|
artikel
|
| 67 |
Shunting patterns occurring in epitaxial 6H-SiC p-n structures for high-voltage rectifiers
|
Strel'chuk, Anatoly M.
|
|
1997
|
46 |
1-3 |
p. 231-235
5 p.
|
artikel
|
| 68 |
SiC material for high-power applications
|
Janzén, E.
|
|
1997
|
46 |
1-3 |
p. 203-209
7 p.
|
artikel
|
| 69 |
Silicon carbide for high-temperature microelectronics: recent advances in material growth via gas source MBE and device research
|
Kern, R.S.
|
|
1997
|
46 |
1-3 |
p. 240-247
8 p.
|
artikel
|
| 70 |
Silicon carbide on insulator formation by the Smart-Cut® process
|
Di Cioccio, L.
|
|
1997
|
46 |
1-3 |
p. 349-356
8 p.
|
artikel
|
| 71 |
SOI-structures produced by the silicon direct bonding method
|
Enisherlova, K.L.
|
|
1997
|
46 |
1-3 |
p. 33-37
5 p.
|
artikel
|
| 72 |
Solar-blind UV-photodetector based on polycrystalline diamond films: basic design principle and comparison with experimental results
|
Salvatori, S.
|
|
1997
|
46 |
1-3 |
p. 105-111
7 p.
|
artikel
|
| 73 |
Structural properties of 6H-SiC epilayers grown by two different techniques
|
Kakanakova-Georgieva, A.
|
|
1997
|
46 |
1-3 |
p. 345-348
4 p.
|
artikel
|
| 74 |
Sub-bandgap spectroscopy of chemical vapor deposition diamond
|
Rohrer, E.
|
|
1997
|
46 |
1-3 |
p. 115-118
4 p.
|
artikel
|
| 75 |
Sulfidation mechanism of pre-cleaned GaAs surface using (NH4)2S x solution
|
Kang, Min-Gu
|
|
1997
|
46 |
1-3 |
p. 65-68
4 p.
|
artikel
|
| 76 |
Surface barrier height in metal-SiC structures of 6H, 4H and 3C polytypes
|
Syrkin, A.L.
|
|
1997
|
46 |
1-3 |
p. 236-239
4 p.
|
artikel
|
| 77 |
Surface processing of silicon carbide substrates
|
Bakin, A.S.
|
|
1997
|
46 |
1-3 |
p. 370-373
4 p.
|
artikel
|
| 78 |
Technology towards GaAs MESFET-based IC for high temperature applications
|
Würfl, J.
|
|
1997
|
46 |
1-3 |
p. 52-56
5 p.
|
artikel
|
| 79 |
Temperature gradient controlled SiC crystal growth
|
Anikin, M.
|
|
1997
|
46 |
1-3 |
p. 278-286
9 p.
|
artikel
|
| 80 |
Temperature studies of sulfur passivated GaAs(100) contacts
|
Wu, D.
|
|
1997
|
46 |
1-3 |
p. 61-64
4 p.
|
artikel
|
| 81 |
The influence of temperature treatment on the formation of Ni-based Schottky diodes and ohmic contacts to n-6H-SiC
|
Rastegaeva, M.G.
|
|
1997
|
46 |
1-3 |
p. 254-258
5 p.
|
artikel
|
| 82 |
Thermal drift of piezoresistive properties of LPCVD polysilicon thin films between room temperature and 200 °C
|
Kleimann, P.
|
|
1997
|
46 |
1-3 |
p. 43-46
4 p.
|
artikel
|
| 83 |
Thin film diamond metal-insulator field effect transistor for high temperature applications
|
Pang, Lisa Y.S.
|
|
1997
|
46 |
1-3 |
p. 124-128
5 p.
|
artikel
|
| 84 |
Wafer bonding and H-implantation mechanisms involved in the Smart-cut® technology
|
Maleville, Christophe
|
|
1997
|
46 |
1-3 |
p. 14-19
6 p.
|
artikel
|
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