| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Advantages of thin interfaces in step-graded buffer structures
|
González, D.
|
|
1997
|
44 |
1-3 |
p. 41-45
5 p.
|
artikel
|
| 2 |
Assessment of compensation ratio in high-purity GaAs using photoluminescence
|
Oelgart, G.
|
|
1997
|
44 |
1-3 |
p. 228-232
5 p.
|
artikel
|
| 3 |
Assessment of SI GaAs particle detectors
|
Berwick, K.
|
|
1997
|
44 |
1-3 |
p. 330-333
4 p.
|
artikel
|
| 4 |
Beryllium diffusion in InGaAs epitaxial layers: a point defect nonequilibrium model
|
Marcon, J.
|
|
1997
|
44 |
1-3 |
p. 78-81
4 p.
|
artikel
|
| 5 |
Beryllium diffusion in short-period Al x Ga1 − x As/AlAs-superlattices and vertically compact laser structures grown by molecular beam epitaxy
|
Gaymann, A.
|
|
1997
|
44 |
1-3 |
p. 12-15
4 p.
|
artikel
|
| 6 |
Cathodoluminescence characterization of a compound semiconductornative dielectric interface
|
Berchenko, N.N.
|
|
1997
|
44 |
1-3 |
p. 139-142
4 p.
|
artikel
|
| 7 |
Characterisation of InP and GaInAsP layers prepared by liquid-phase epitaxy using holmium doping and gettering
|
Procházková, O.
|
|
1997
|
44 |
1-3 |
p. 160-163
4 p.
|
artikel
|
| 8 |
Characterization of low-temperature GaAs by galvanomagnetic an photoluminescence measurements
|
Novák, J.
|
|
1997
|
44 |
1-3 |
p. 341-344
4 p.
|
artikel
|
| 9 |
Characterization of molecular beam epitaxy p-Cd x Hg1 − x Te layers using the photoconductive effect in crossed E → ⊥ B → fields
|
Studenikin, S.A.
|
|
1997
|
44 |
1-3 |
p. 288-291
4 p.
|
artikel
|
| 10 |
Comparative study of microdefects in dislocation-free, heavily Si doped VB GaAs by DSL etching, NIR phase contrast microscopy, TEM and X-ray diffuse scattering
|
Weyher, J.L.
|
|
1997
|
44 |
1-3 |
p. 242-247
6 p.
|
artikel
|
| 11 |
Compositional inhomogeneity and strain relaxation in InGaAs SQWs MOVPE-grown on tilted GaAs substrates
|
Frigeri, C.
|
|
1997
|
44 |
1-3 |
p. 101-105
5 p.
|
artikel
|
| 12 |
Computer controlled microwave transient photoconductivity for the nondestructive characterization of GaAs substrates
|
Buldygin, S.A.
|
|
1997
|
44 |
1-3 |
p. 223-227
5 p.
|
artikel
|
| 13 |
Conduction band offset ratio of the (In,Ga)As/GaAs system and (In,Ga)As alloy properties
|
Leymarie, J.
|
|
1997
|
44 |
1-3 |
p. 147-150
4 p.
|
artikel
|
| 14 |
Control of the n-type doping in Al x Ga1 − x Sb: DX-center behavior of the Te impurity
|
Baraldi, A.
|
|
1997
|
44 |
1-3 |
p. 70-73
4 p.
|
artikel
|
| 15 |
Conversion mechanism of GaAs to GaAsP on GaP substrate
|
Kimura, M.
|
|
1997
|
44 |
1-3 |
p. 16-19
4 p.
|
artikel
|
| 16 |
Correlation of electrical anisotropies of HEMT devices with defect distribution and InGaAs well roughness
|
Peiró, F.
|
|
1997
|
44 |
1-3 |
p. 325-329
5 p.
|
artikel
|
| 17 |
Critical issues of III–V compound semiconductor processing
|
Pearton, S.J.
|
|
1997
|
44 |
1-3 |
p. 1-7
7 p.
|
artikel
|
| 18 |
Critical material and processing issues of SiC electronic devices
|
Cooper Jr., James A.
|
|
1997
|
44 |
1-3 |
p. 387-391
5 p.
|
artikel
|
| 19 |
Crystalline perfection in GaInAsP/GaAs laser structures with GaInP or AlGaAs cladding layers
|
Rechenberg, I.
|
|
1997
|
44 |
1-3 |
p. 368-372
5 p.
|
artikel
|
| 20 |
Defect characterization in InP substrates implanted with 2 MeV Fe ions
|
Frigeri, C.
|
|
1997
|
44 |
1-3 |
p. 193-197
5 p.
|
artikel
|
| 21 |
Defect inspection of wafers by laser scattering
|
Takami, Katsumi
|
|
1997
|
44 |
1-3 |
p. 181-187
7 p.
|
artikel
|
| 22 |
Defect processes causing free carrier variations around dislocations in n-type doped GaAs
|
Paetzold, O.
|
|
1997
|
44 |
1-3 |
p. 217-219
3 p.
|
artikel
|
| 23 |
Determination of auger-sensitivity-factors in Zn1 − x Mg x Te for quantitaitve surface analysis
|
Wirthl, E.
|
|
1997
|
44 |
1-3 |
p. 400-402
3 p.
|
artikel
|
| 24 |
Determination of interface composition in III-V heterojunction devices (HBT and RTD) with atomic resolution using STEM techniques
|
Lakner, H.
|
|
1997
|
44 |
1-3 |
p. 52-56
5 p.
|
artikel
|
| 25 |
Device-relevant point defects in GaAs and InP
|
Corbel, C.
|
|
1997
|
44 |
1-3 |
p. 173-180
8 p.
|
artikel
|
| 26 |
EBIC mode characterization of transport properties on laser heterostructures
|
Romero, M.J.
|
|
1997
|
44 |
1-3 |
p. 57-60
4 p.
|
artikel
|
| 27 |
Effects of segregation on the optical properties of (In,Ga)As/GaAs quantum wells grown by MBE under various conditions
|
Disseix, P.
|
|
1997
|
44 |
1-3 |
p. 151-154
4 p.
|
artikel
|
| 28 |
Electrical activation of boron implanted in p-HgCdTe (x = 0.22) by low-temperature annealing under an anodic oxide
|
Talipov, N.Kh.
|
|
1997
|
44 |
1-3 |
p. 266-269
4 p.
|
artikel
|
| 29 |
Electrical and optical properties of semi-insulating GaN
|
Looka, D.C.
|
|
1997
|
44 |
1-3 |
p. 423-426
4 p.
|
artikel
|
| 30 |
Electrical evaluation of InP surface damage by reactive ion etching using mixture of ethane (C2H6) and hydrogen (H2)
|
Yamamoto, N.
|
|
1997
|
44 |
1-3 |
p. 61-64
4 p.
|
artikel
|
| 31 |
Electrical properties of n-GaAs epilayers, FET and HEMT structures grown on LT-GaAs by MBE
|
Lagadas, M.
|
|
1997
|
44 |
1-3 |
p. 355-358
4 p.
|
artikel
|
| 32 |
Electron transport in low temperature grown GaAs
|
Khirouni, K.
|
|
1997
|
44 |
1-3 |
p. 334-336
3 p.
|
artikel
|
| 33 |
Ellipsometry as a powerful tool for the control of epitaxial semiconductor structures in-situ and ex-situ
|
Svitashev, K.K.
|
|
1997
|
44 |
1-3 |
p. 164-167
4 p.
|
artikel
|
| 34 |
Enhancement of the photoconductive properties of PbS films deposited on ferroelectric substrates
|
Pintilie, I.
|
|
1997
|
44 |
1-3 |
p. 292-296
5 p.
|
artikel
|
| 35 |
Evaluating epitaxial growth stability
|
Christensen, D.H.
|
|
1997
|
44 |
1-3 |
p. 113-116
4 p.
|
artikel
|
| 36 |
Evaluation of III–V multilayer transport parameters using quantitative mobility spectrum analysis
|
Antoszewski, J.
|
|
1997
|
44 |
1-3 |
p. 65-69
5 p.
|
artikel
|
| 37 |
Evaluation of the properties of hydrogenated InP/InGaAsP double heterostructure waveguides
|
Rao, E.V.K.
|
|
1997
|
44 |
1-3 |
p. 117-120
4 p.
|
artikel
|
| 38 |
Fabrication of InP/air-gap distributed Bragg reflectors and micro-cavities
|
Streubel, K.
|
|
1997
|
44 |
1-3 |
p. 364-367
4 p.
|
artikel
|
| 39 |
Fundamental issues of device-relevant low temperature GaAs and related materials properties
|
Missous, Mohamed
|
|
1997
|
44 |
1-3 |
p. 304-310
7 p.
|
artikel
|
| 40 |
Growth and properties of CdS thin films deposited from aqueous solutions, using different cadmium salts
|
Pintilie, L.
|
|
1997
|
44 |
1-3 |
p. 403-406
4 p.
|
artikel
|
| 41 |
Growth and properties of semi-insulating VGF-GaAs
|
Buhrig, E.
|
|
1997
|
44 |
1-3 |
p. 248-251
4 p.
|
artikel
|
| 42 |
Growth and properties of single crystalline GaN substrates and homoepitaxial layers
|
Porowski, S.
|
|
1997
|
44 |
1-3 |
p. 407-413
7 p.
|
artikel
|
| 43 |
HgCdTe extended defects electrical activity characterization by variable magnetic field hall measurements
|
Berchenko, N.N.
|
|
1997
|
44 |
1-3 |
p. 274-277
4 p.
|
artikel
|
| 44 |
Hg1 − x Cd x Te/Cd1 − yZnyTe characterization: from basic studies to on-line methods
|
Wolny, M.
|
|
1997
|
44 |
1-3 |
p. 252-259
8 p.
|
artikel
|
| 45 |
High-resolution resistivity mapping of bulk semi-insulating GaAs by point-contact technique
|
Siegel, W.
|
|
1997
|
44 |
1-3 |
p. 238-241
4 p.
|
artikel
|
| 46 |
Homogeneity of thermally annealed Fe-doped InP wafers
|
Fornari, R.
|
|
1997
|
44 |
1-3 |
p. 233-237
5 p.
|
artikel
|
| 47 |
Hydrogen in carbon-doped GaAs base layer of GaInP/GaAs heterojunction bipolar transistors
|
Richter, E.
|
|
1997
|
44 |
1-3 |
p. 337-340
4 p.
|
artikel
|
| 48 |
III-Nitride multiwafer MOCVD systems for blue-green LED material
|
Woelk, E.
|
|
1997
|
44 |
1-3 |
p. 419-422
4 p.
|
artikel
|
| 49 |
Influence of n-GaAs/i-AlGaAs heterostructure interfaces on the electrical properties of the n-GaAs channel layer
|
Otoki, Y.
|
|
1997
|
44 |
1-3 |
p. 8-11
4 p.
|
artikel
|
| 50 |
Influence of preparation procedure on the characteristics of Schottky barriers fabricated in situ on MBE GaSb
|
Mosca, R.
|
|
1997
|
44 |
1-3 |
p. 24-27
4 p.
|
artikel
|
| 51 |
Influence of some n-type InSb properties on the main parameters of infrared photoconductive detectors
|
Grigorescu, C.E.A.
|
|
1997
|
44 |
1-3 |
p. 270-273
4 p.
|
artikel
|
| 52 |
Interdiffusion in InGaAs/GaAs and InGaAs/GaAsP quantum wells
|
Oster, A.
|
|
1997
|
44 |
1-3 |
p. 20-23
4 p.
|
artikel
|
| 53 |
Investigation of growth temperature dependent GaInP ordering in different crystal planes using X-ray diffraction and photoluminescence
|
Liu, Q.
|
|
1997
|
44 |
1-3 |
p. 91-95
5 p.
|
artikel
|
| 54 |
Investigation of the GaAs/Si heterojunction band lineup with capacitance and current versus voltage measurements
|
Georgakilas, A.
|
|
1997
|
44 |
1-3 |
p. 383-386
4 p.
|
artikel
|
| 55 |
Investigation of transient transport effects in semi-insulating GaAs caused by defect state change and their interaction
|
Kazukauskas, V.
|
|
1997
|
44 |
1-3 |
p. 220-222
3 p.
|
artikel
|
| 56 |
Investigations of structural defects by etching of GaSb grown by the liquid-encapsulated Czochralski technique
|
Costa, E.M.
|
|
1997
|
44 |
1-3 |
p. 208-212
5 p.
|
artikel
|
| 57 |
Local express scanning characterization of crystal parameters of a semiconductor surface and bulk simultaneously by means of second harmonic generation
|
Balanyuk, V.V.
|
|
1997
|
44 |
1-3 |
p. 168-172
5 p.
|
artikel
|
| 58 |
Material and fabrication-related limitations to high-power operation of GaAs/AlGaAs and InGaAs/AlGaAs laser diodes
|
Jakubowicz, A.
|
|
1997
|
44 |
1-3 |
p. 359-363
5 p.
|
artikel
|
| 59 |
Material and process related limitations of InP HEMT performance
|
Van Hove, M.
|
|
1997
|
44 |
1-3 |
p. 311-315
5 p.
|
artikel
|
| 60 |
MBE-grown heavily Sm-doped ZnTe studied by optical spectroscopy
|
Wrack, D.
|
|
1997
|
44 |
1-3 |
p. 395-399
5 p.
|
artikel
|
| 61 |
Mechanisms for implantation induced interdiffusion at In0.53Ga0.47As/In0.52Al0.48As heterointerfaces
|
Kimura, Tadamasa
|
|
1997
|
44 |
1-3 |
p. 28-32
5 p.
|
artikel
|
| 62 |
Method for the characterization of electron, light- and heavy-hole concentrations and mobilities in narrow-gap p-type HgCdTe
|
Talipov, N.K.
|
|
1997
|
44 |
1-3 |
p. 278-282
5 p.
|
artikel
|
| 63 |
Metrological, electrical and thermal analysis of semiconductor structures using scanning force microscopy
|
Müller-Zülow, B.
|
|
1997
|
44 |
1-3 |
p. 74-77
4 p.
|
artikel
|
| 64 |
Micropipes and polytypism as a source of lateral inhomogeneities in SiC substrates
|
Müller, S.G.
|
|
1997
|
44 |
1-3 |
p. 392-394
3 p.
|
artikel
|
| 65 |
Microwave method for the characterization of transport parameters of heterostructures and narrow gap semiconductor films
|
Baturina, T.I.
|
|
1997
|
44 |
1-3 |
p. 283-287
5 p.
|
artikel
|
| 66 |
Modelling intermixing of short period strained layer superlattices by means of X-ray diffraction analysis
|
Brennemann, A.
|
|
1997
|
44 |
1-3 |
p. 87-90
4 p.
|
artikel
|
| 67 |
Monte Carlo simulation of the effect of interstitial atoms interaction on the heteroepitaxial growth of compound semiconductors
|
Djafari Rouhani, M.
|
|
1997
|
44 |
1-3 |
p. 82-86
5 p.
|
artikel
|
| 68 |
Non-contacting spatially resolved measurements of Fermi energy and photoconductivity in semi-insulating undoped GaAs and InP:Fe
|
Young, S.M.
|
|
1997
|
44 |
1-3 |
p. 203-207
5 p.
|
artikel
|
| 69 |
Nondestructive and contactless microwave methods for profiling the mobility in active layers of multilayer structures grown on semiinsulating substrates
|
Panaev, I.A.
|
|
1997
|
44 |
1-3 |
p. 130-133
4 p.
|
artikel
|
| 70 |
Optical and electro-optical investigation of low-temperature grown GaAs
|
Dankowski, S.U.
|
|
1997
|
44 |
1-3 |
p. 316-319
4 p.
|
artikel
|
| 71 |
Optical and structural properties of anodized Al x Ga1 − x As layers
|
Xiang, X.B.
|
|
1997
|
44 |
1-3 |
p. 121-124
4 p.
|
artikel
|
| 72 |
Periodic gain structures for vertical cavity surface emitting lasers
|
Rapp, S.
|
|
1997
|
44 |
1-3 |
p. 373-375
3 p.
|
artikel
|
| 73 |
Preface
|
Jantz, Wolfgang
|
|
1997
|
44 |
1-3 |
p. x-
1 p.
|
artikel
|
| 74 |
Preparation and test of special surfaces for epi-ready InP wafers
|
Molinas, B.
|
|
1997
|
44 |
1-3 |
p. 213-216
4 p.
|
artikel
|
| 75 |
Progress in the layer thickness determination of AlGaAs/GaAs heterostructures using selective etching and AFM imaging of the (110) cleavage planes
|
Müller, S.
|
|
1997
|
44 |
1-3 |
p. 96-100
5 p.
|
artikel
|
| 76 |
Properties of silicon pulse doped InGaP layers grown by LP-MOCVD
|
Malacký, L.
|
|
1997
|
44 |
1-3 |
p. 33-36
4 p.
|
artikel
|
| 77 |
Rapid and high concentrated permeation of Ga into InSb
|
Kumagawa, M.
|
|
1997
|
44 |
1-3 |
p. 301-303
3 p.
|
artikel
|
| 78 |
Rapid thermal annealing of n-(Cd, Hg)Te crystals
|
Savitsky, V.G.
|
|
1997
|
44 |
1-3 |
p. 297-300
4 p.
|
artikel
|
| 79 |
Real-time monitoring and control during MBE growth of GaAs/AlGaAs Bragg reflectors using multi-wavelength ellipsometry
|
Johs, Blaine
|
|
1997
|
44 |
1-3 |
p. 134-138
5 p.
|
artikel
|
| 80 |
Room temperature scanning photoluminescence for mapping the lifetime and the doping density in epitaxial layers
|
Nuban, M.F.
|
|
1997
|
44 |
1-3 |
p. 125-129
5 p.
|
artikel
|
| 81 |
Scanning capacitance microscopy applied to two-dimensional dopant profiling of semiconductors
|
Kopanski, Joseph J.
|
|
1997
|
44 |
1-3 |
p. 46-51
6 p.
|
artikel
|
| 82 |
Scanning probe microscopy of GaAs/AlGaAs superlattices
|
Fedirko, V.A.
|
|
1997
|
44 |
1-3 |
p. 110-112
3 p.
|
artikel
|
| 83 |
Scanning tunneling microscopy characterization of metalorganic chemical vapor deposition grown GaN
|
Horna, Joachim
|
|
1997
|
44 |
1-3 |
p. 414-418
5 p.
|
artikel
|
| 84 |
Semi-insulating LEC GaAs sub strates with an improved macroscopic and mesoscopic homogeneity
|
Jurisch, M.
|
|
1997
|
44 |
1-3 |
p. 198-202
5 p.
|
artikel
|
| 85 |
Silicon substrate optimization for microwave applications of GaAs/Si MESFETs
|
Papavassiliou, C.
|
|
1997
|
44 |
1-3 |
p. 351-354
4 p.
|
artikel
|
| 86 |
Structural study of AlGaAs/InGaAs superlattices grown by MBE on (111)B GaAs substrates
|
Rojas, T.C.
|
|
1997
|
44 |
1-3 |
p. 106-109
4 p.
|
artikel
|
| 87 |
Study of phonons in semiconductor superlattices by Raman scattering spectroscopy and microscopic model calculation
|
Talwar, D.N.
|
|
1997
|
44 |
1-3 |
p. 143-146
4 p.
|
artikel
|
| 88 |
Sulfidization of GaAs in alcoholic solutions: a method having an impact on efficiency and stability of passivation
|
Bessolov, Vasily N.
|
|
1997
|
44 |
1-3 |
p. 376-379
4 p.
|
artikel
|
| 89 |
Sulfur passivation of InGaAs/AlGaAs SQW laser (977 nm) facets in alcohol-based solutions
|
Bessolov, Vasily N.
|
|
1997
|
44 |
1-3 |
p. 380-382
3 p.
|
artikel
|
| 90 |
Surface morphology and Raman scattering in GaAs/InAs(111) heterostructures grown by MOVPE
|
Attolini, G.
|
|
1997
|
44 |
1-3 |
p. 155-159
5 p.
|
artikel
|
| 91 |
The effect of base-emitter space-charge recombination on the temperature dependence of current gains in InGaP/GaAs and AlGaAs/GaAs HBTs
|
Rezazadeh, A.A.
|
|
1997
|
44 |
1-3 |
p. 345-350
6 p.
|
artikel
|
| 92 |
The evaluation and control of quantum wells and superlattices of III–V narrow gap semiconductors
|
Stradling, R.A.
|
|
1997
|
44 |
1-3 |
p. 260-265
6 p.
|
artikel
|
| 93 |
The relationship between the resistivity of semi-insulating GaAs and MESFET properties
|
Miner, Carla
|
|
1997
|
44 |
1-3 |
p. 188-192
5 p.
|
artikel
|
| 94 |
The role of N2 and H2 as carrier gas on the selective area MOVPE of InP-based heterostructures using TBAs and TBP as group-V sources
|
Zimmermann, G.
|
|
1997
|
44 |
1-3 |
p. 37-40
4 p.
|
artikel
|
| 95 |
Uniform InAlAs/InP HFET fabricated using selective dry recess etching
|
Achouche, M.
|
|
1997
|
44 |
1-3 |
p. 320-324
5 p.
|
artikel
|
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