Comparative study of microdefects in dislocation-free, heavily Si doped VB GaAs by DSL etching, NIR phase contrast microscopy, TEM and X-ray diffuse scattering
Titel:
Comparative study of microdefects in dislocation-free, heavily Si doped VB GaAs by DSL etching, NIR phase contrast microscopy, TEM and X-ray diffuse scattering
Auteur:
Weyher, J.L. Sonnenberg, K. Schober, T. Rucki, A. Jäger, W. Franzosi, P. Frigeri, C.
Verschenen in:
Materials science and engineering. B, Solid-state materials for advanced technology