| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A complementary III–V heterostructure field effect transistor technology for high temperature integrated circuits
|
Wilson, Craig
|
|
1995
|
29 |
1-3 |
p. 54-57
4 p.
|
artikel
|
| 2 |
Analysis of SIMOX metal-oxide-semiconductor transistors operated in the high temperature range
|
Ouisse, T.
|
|
1995
|
29 |
1-3 |
p. 21-23
3 p.
|
artikel
|
| 3 |
Are polytype transitions possible during boron diffusion?
|
Pezoldt, J.
|
|
1995
|
29 |
1-3 |
p. 99-104
6 p.
|
artikel
|
| 4 |
A study of the growth and shrinkage of stacking faults in SIMOX
|
Silvestre, G.
|
|
1995
|
29 |
1-3 |
p. 24-28
5 p.
|
artikel
|
| 5 |
Author index of volume 29
|
|
|
1995
|
29 |
1-3 |
p. 237-238
2 p.
|
artikel
|
| 6 |
Boron doped diamond films: Electrical and optical characterization and the effect of compensating nitrogen
|
Locher, R.
|
|
1995
|
29 |
1-3 |
p. 211-215
5 p.
|
artikel
|
| 7 |
Boron-rich solids: A chance for high-efficiency high-temperature thermoelectric energy conversion
|
Werheit, Helmut
|
|
1995
|
29 |
1-3 |
p. 228-232
5 p.
|
artikel
|
| 8 |
Carbonization of Si surfaces by solid source molecular beam epitaxy
|
Zekentes, K.
|
|
1995
|
29 |
1-3 |
p. 138-141
4 p.
|
artikel
|
| 9 |
Chemical vapour deposition of diamond from a novel capacitively coupled r.f. plasma source
|
Jackman, Richard B.
|
|
1995
|
29 |
1-3 |
p. 216-219
4 p.
|
artikel
|
| 10 |
Comparison of properties of solid phase epitaxial silicon on sapphire films recrystallized by rapid thermal annealing and furnace annealing
|
Wang, Qiyuan
|
|
1995
|
29 |
1-3 |
p. 43-46
4 p.
|
artikel
|
| 11 |
Contact resistivity of Re, Pt and Ta films on n-type β-SiC: Preliminary results
|
Chen, J.S.
|
|
1995
|
29 |
1-3 |
p. 185-189
5 p.
|
artikel
|
| 12 |
Deep centers and electroluminescence in 4HSiC diodes with a p-type base region
|
Kuznetsov, N.I.
|
|
1995
|
29 |
1-3 |
p. 181-184
4 p.
|
artikel
|
| 13 |
Defect production and annealing in ion implanted silicon carbide
|
Heft, A.
|
|
1995
|
29 |
1-3 |
p. 142-146
5 p.
|
artikel
|
| 14 |
Deposition and optical properties of amorphous hydrogenated Si x C y layers
|
Chumakov, Alexander A.
|
|
1995
|
29 |
1-3 |
p. 151-153
3 p.
|
artikel
|
| 15 |
Determination of donor and acceptor level energies by admittance spectroscopy in 6H SiC
|
Raynaud, C.
|
|
1995
|
29 |
1-3 |
p. 122-125
4 p.
|
artikel
|
| 16 |
Determination of the GaN/A1N band discontinuities via the ( − 0 ) acceptor level of iron
|
Baur, J.
|
|
1995
|
29 |
1-3 |
p. 61-64
4 p.
|
artikel
|
| 17 |
Development of chemical beam epitaxy for the deposition of gallium nitride
|
Kingsley, C.R.
|
|
1995
|
29 |
1-3 |
p. 78-82
5 p.
|
artikel
|
| 18 |
Diffusion controlled degradation analysis of high temperature (Bi,Sb)2(Te,Se)3 semiconductor thermoelectric power modules
|
Huang, Choupin
|
|
1995
|
29 |
1-3 |
p. 233-236
4 p.
|
artikel
|
| 19 |
Editorial Board
|
|
|
1995
|
29 |
1-3 |
p. iii-
1 p.
|
artikel
|
| 20 |
Effects of Ar and H2 annealing on the electrical properties of oxides on 6H SiC
|
Stein von Kamienski, E.
|
|
1995
|
29 |
1-3 |
p. 131-133
3 p.
|
artikel
|
| 21 |
Electronic transport in thermally crystallized SiC films on sapphire
|
Hellmich, W.
|
|
1995
|
29 |
1-3 |
p. 147-150
4 p.
|
artikel
|
| 22 |
Fabrication and properties of high-resistivity porous silicon carbide for SiC power device passivation
|
Konstantinov, A.O.
|
|
1995
|
29 |
1-3 |
p. 114-117
4 p.
|
artikel
|
| 23 |
Formation of β-SiC films by ion beam mixing of Si C multilayers
|
Rivière, J.P.
|
|
1995
|
29 |
1-3 |
p. 105-109
5 p.
|
artikel
|
| 24 |
Growth of bulk SiC
|
Tairov, Yu.M.
|
|
1995
|
29 |
1-3 |
p. 83-89
7 p.
|
artikel
|
| 25 |
Growth of thin β-SiC layers by carbonization of Si surfaces by rapid thermal processing
|
Cimalla, V.
|
|
1995
|
29 |
1-3 |
p. 170-175
6 p.
|
artikel
|
| 26 |
High temperature contacts to chemically vapour deposited diamond films—reliability issues
|
Johnston, C.
|
|
1995
|
29 |
1-3 |
p. 206-210
5 p.
|
artikel
|
| 27 |
High temperature 6H-SiC dinistor
|
Andreev, A.N.
|
|
1995
|
29 |
1-3 |
p. 194-197
4 p.
|
artikel
|
| 28 |
High temperature silicon carbide stabilitrons for the voltage range from 4 to 50 V
|
Andreev, A.N.
|
|
1995
|
29 |
1-3 |
p. 190-193
4 p.
|
artikel
|
| 29 |
High temperature stability of chemically vapour deposited diamond diodes
|
McKeag, Robert D.
|
|
1995
|
29 |
1-3 |
p. 223-227
5 p.
|
artikel
|
| 30 |
How to induce the epitaxial growth of gallium nitride on Si(001)
|
Rössner, U.
|
|
1995
|
29 |
1-3 |
p. 74-77
4 p.
|
artikel
|
| 31 |
III–V semiconductor properties for high temperature electronics
|
Hartnagel, Hans L.
|
|
1995
|
29 |
1-3 |
p. 47-53
7 p.
|
artikel
|
| 32 |
Interfacial reactions of W thin film on single-crystal (001) β-SiC
|
Baud, L.
|
|
1995
|
29 |
1-3 |
p. 126-130
5 p.
|
artikel
|
| 33 |
Investigations on Pd In -based high temperature stable ohmic contacts on GaAs by X-ray reflectometry and diffractometry
|
Pirling, T.
|
|
1995
|
29 |
1-3 |
p. 70-73
4 p.
|
artikel
|
| 34 |
Macrodefect formation in semiconductors during high energy ion implantation: Monte Carlo simulation of damage depth distributions
|
Fedotov, S.A.
|
|
1995
|
29 |
1-3 |
p. 202-205
4 p.
|
artikel
|
| 35 |
Magnetic circular dichroism and electron spin resonance of the A− acceptor state of vanadium, V3+, in 6H-SiC
|
Kunzer, M.
|
|
1995
|
29 |
1-3 |
p. 118-121
4 p.
|
artikel
|
| 36 |
Metal-organic chemical vapor deposition growth of GaN
|
Lu, Da-chen
|
|
1995
|
29 |
1-3 |
p. 58-60
3 p.
|
artikel
|
| 37 |
Monte Carlo simulation of growth and recovery of silicon
|
Keršulis, Saulius
|
|
1995
|
29 |
1-3 |
p. 34-37
4 p.
|
artikel
|
| 38 |
Observation of Si out-diffusion related defects in SiC growth on Si(001)
|
Diani, M.
|
|
1995
|
29 |
1-3 |
p. 110-113
4 p.
|
artikel
|
| 39 |
Organizers and sponsors
|
|
|
1995
|
29 |
1-3 |
p. x-
1 p.
|
artikel
|
| 40 |
Preface
|
Fricke, K.
|
|
1995
|
29 |
1-3 |
p. ix-
1 p.
|
artikel
|
| 41 |
Reactive ion etching characterization of a-SiC: H in CF4/O2 plasma
|
Saggio, G.
|
|
1995
|
29 |
1-3 |
p. 176-180
5 p.
|
artikel
|
| 42 |
Silicon-on-insulator technology for high temperature metal oxide semiconductor devices and circuits
|
Flandre, Denis
|
|
1995
|
29 |
1-3 |
p. 7-12
6 p.
|
artikel
|
| 43 |
Silicon-on-insulator technology for high-temperature, smart-power applications
|
Korec, Jacek
|
|
1995
|
29 |
1-3 |
p. 1-6
6 p.
|
artikel
|
| 44 |
Sputtering effects in hexagonal silicon carbide
|
Pezoldt, J.
|
|
1995
|
29 |
1-3 |
p. 94-98
5 p.
|
artikel
|
| 45 |
Static and dynamic behaviour of power devices in silicon-direct-bonded substrates
|
Apel, U.
|
|
1995
|
29 |
1-3 |
p. 13-17
5 p.
|
artikel
|
| 46 |
Strain reduction in the Si overlayer for improved SIMOX material
|
Ellingboe, S.L.
|
|
1995
|
29 |
1-3 |
p. 29-33
5 p.
|
artikel
|
| 47 |
Structural and electronic characterization of β-SiC films on Si grown from mono-methylsilane precursors
|
Krötz, G.
|
|
1995
|
29 |
1-3 |
p. 154-159
6 p.
|
artikel
|
| 48 |
Structural, optical and electrical properties of state of the art cubic SiC films
|
Stoemenos, J.
|
|
1995
|
29 |
1-3 |
p. 160-164
5 p.
|
artikel
|
| 49 |
Structure of nitrogen-substituted graphite prepared by chemical vapor deposition
|
Matsui, T.
|
|
1995
|
29 |
1-3 |
p. 220-222
3 p.
|
artikel
|
| 50 |
Study of SiC single-crystal sublimation growth conditions
|
Garcon, I.
|
|
1995
|
29 |
1-3 |
p. 90-93
4 p.
|
artikel
|
| 51 |
Subject index of volume 29
|
|
|
1995
|
29 |
1-3 |
p. 239-242
4 p.
|
artikel
|
| 52 |
Surface barrier height in metal-n-6H-SiC structures
|
Syrkin, A.L.
|
|
1995
|
29 |
1-3 |
p. 198-201
4 p.
|
artikel
|
| 53 |
Temperature dependence of the thin film silicon-on-insulator field effect transistor current characteristics based on full solution for the one-dimensional MISIS structure
|
Scheinert, S.
|
|
1995
|
29 |
1-3 |
p. 38-42
5 p.
|
artikel
|
| 54 |
The optical properties and electronic transitions of cubi and hexagonal GaN films between 1.5 and 10 eV
|
Logothetidis, S.
|
|
1995
|
29 |
1-3 |
p. 65-69
5 p.
|
artikel
|
| 55 |
Tungsten metallization technology for high temperature silicon-on-insulator devices
|
Chen, Jian
|
|
1995
|
29 |
1-3 |
p. 18-20
3 p.
|
artikel
|
| 56 |
Unintentional incorporation of contaminants during chemical vapour deposition of silicon carbide
|
Karmann, Stephan
|
|
1995
|
29 |
1-3 |
p. 134-137
4 p.
|
artikel
|
| 57 |
X-ray photoelectron spectroscopy study of Sn+ implanted a-Si1 − x C x:H thin films
|
Tzenov, N.
|
|
1995
|
29 |
1-3 |
p. 165-169
5 p.
|
artikel
|
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