| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An electron-beam-induced current study of dislocations in GaAs
|
Galloway, S.A.
|
|
1994
|
24 |
1-3 |
p. 91-97
7 p.
|
artikel
|
| 2 |
Apparatus for digital electron-beam-induced current imaging
|
Bell, Richard O.
|
|
1994
|
24 |
1-3 |
p. 64-67
4 p.
|
artikel
|
| 3 |
Application aspects of beam injection methods
|
Bresse, J.-F.
|
|
1994
|
24 |
1-3 |
p. 229-232
4 p.
|
artikel
|
| 4 |
Author index of volume 24
|
|
|
1994
|
24 |
1-3 |
p. 233-
1 p.
|
artikel
|
| 5 |
Basic dislocation contrasts in SEM-CL/EBIC on III–V semiconductors
|
Schreiber, J.
|
|
1994
|
24 |
1-3 |
p. 115-120
6 p.
|
artikel
|
| 6 |
Cathodoluminescence and electron-beam-induced current investigations of single dislocations in GaAs
|
Wosinski, Tadeusz
|
|
1994
|
24 |
1-3 |
p. 112-114
3 p.
|
artikel
|
| 7 |
Cathodoluminescence dependence on electron beam diameter
|
Achour, S.
|
|
1994
|
24 |
1-3 |
p. 141-143
3 p.
|
artikel
|
| 8 |
Cathodoluminescence from defects in electron-irradiated InP
|
Urchulutegui, M.
|
|
1994
|
24 |
1-3 |
p. 135-137
3 p.
|
artikel
|
| 9 |
Cathodoluminescence imaging of dislocations in CdS: a new defocused-mirror technique
|
Vyvenko, O.
|
|
1994
|
24 |
1-3 |
p. 105-111
7 p.
|
artikel
|
| 10 |
Cathodoluminescence imaging of misfit dislocations in Si/SiGe epitaxial layers: the influence of transition metal contamination
|
Higgs, V.
|
|
1994
|
24 |
1-3 |
p. 48-51
4 p.
|
artikel
|
| 11 |
Characterization of implanted silicon wafers by the non-linear photoreflectance technique
|
Forget, B.C.
|
|
1994
|
24 |
1-3 |
p. 199-202
4 p.
|
artikel
|
| 12 |
Characterization of the strength and position of semiconductor defects by the multielectrode EBIC (OBIC) method
|
Sirotkin, V.V.
|
|
1994
|
24 |
1-3 |
p. 87-90
4 p.
|
artikel
|
| 13 |
Cross-sectional scanning tunneling microscopy on semiconductor heterostructures
|
Johnson, M.B.
|
|
1994
|
24 |
1-3 |
p. 213-217
5 p.
|
artikel
|
| 14 |
Determination of the electronic structure of grain boundaries by energy-resolved photoconductivity measurements
|
Pizzini, S.
|
|
1994
|
24 |
1-3 |
p. 159-166
8 p.
|
artikel
|
| 15 |
Determination of the lateral distribution of electron-hole pairs generated by an electron beam in Al0.4Ga0.6As by cathodoluminescence
|
Araújo, D.
|
|
1994
|
24 |
1-3 |
p. 124-129
6 p.
|
artikel
|
| 16 |
Dislocations and quantum transport: a possible hint for one-dimensional conductivity along dislocation lines; a fundamental mechanism for the EBIC contrast formation
|
Bougrioua, Z.
|
|
1994
|
24 |
1-3 |
p. 82-86
5 p.
|
artikel
|
| 17 |
EBIC and cathodoluminescence evaluation of III–V compounds
|
Sieber, B.
|
|
1994
|
24 |
1-3 |
p. 35-42
8 p.
|
artikel
|
| 18 |
Editorial Board
|
|
|
1994
|
24 |
1-3 |
p. i-
1 p.
|
artikel
|
| 19 |
Electrical characterization of integrated circuits by scanning force microscopy
|
Böhm, C.
|
|
1994
|
24 |
1-3 |
p. 218-222
5 p.
|
artikel
|
| 20 |
Electron-beam-induced activity of defects in silicon
|
Wilshaw, P.R.
|
|
1994
|
24 |
1-3 |
p. 8-14
7 p.
|
artikel
|
| 21 |
Electron-beam-induced current and atomic force microscopy studies on silicon etch steps created by reactive ion etching and reactive ion beam etching
|
Jäger-Waldau, G.
|
|
1994
|
24 |
1-3 |
p. 223-225
3 p.
|
artikel
|
| 22 |
Electron-beam-induced current quantitative mapping: application to Si solar cells
|
Barhdadi, A.
|
|
1994
|
24 |
1-3 |
p. 68-73
6 p.
|
artikel
|
| 23 |
Evaluation of diffusion length at different excess carrier concentrations
|
Cavalcoli, D.
|
|
1994
|
24 |
1-3 |
p. 98-100
3 p.
|
artikel
|
| 24 |
Foreword
|
|
|
1994
|
24 |
1-3 |
p. ix-
1 p.
|
artikel
|
| 25 |
Influence of surface treatment on electrical activity of dislocations and minority carrier diffusion length in cast multicrystalline silicon
|
Voigt, A.
|
|
1994
|
24 |
1-3 |
p. 74-77
4 p.
|
artikel
|
| 26 |
LBIC and diffusion length mapping applied to the investigation of gettering by aluminium diffusion in multicrystalline silicon
|
Porre, O.
|
|
1994
|
24 |
1-3 |
p. 188-191
4 p.
|
artikel
|
| 27 |
Light-beam-induced transient spectroscopy of oxidation-induced stacking faults in silicon
|
Davidson, J.A.
|
|
1994
|
24 |
1-3 |
p. 167-169
3 p.
|
artikel
|
| 28 |
Local investigation of the electrical properties of grain boundaries
|
Palm, J.
|
|
1994
|
24 |
1-3 |
p. 56-60
5 p.
|
artikel
|
| 29 |
Luminescence from rod-like defects and hydrogen related centres in silicon
|
Lightowlers, E.C.
|
|
1994
|
24 |
1-3 |
p. 144-151
8 p.
|
artikel
|
| 30 |
Mapping of defects and their recombination strenght by a light-beam-induced current in silicon wafers
|
Martinuzzi, Santo
|
|
1994
|
24 |
1-3 |
p. 152-158
7 p.
|
artikel
|
| 31 |
Measurements of carrier diffusion length in processed wafers: correlation with the electrical behaviour
|
Polignano, M.L.
|
|
1994
|
24 |
1-3 |
p. 192-198
7 p.
|
artikel
|
| 32 |
Metastable electrical activity of misfit-dislocation-associated defects in Si/Si(Ge) heteroepitaxial structures: EBIC/DLTS correlation
|
Agarwal, A.
|
|
1994
|
24 |
1-3 |
p. 43-47
5 p.
|
artikel
|
| 33 |
Modulated cathodoluminescence for extended defect characterization
|
Kireev, V.A.
|
|
1994
|
24 |
1-3 |
p. 121-123
3 p.
|
artikel
|
| 34 |
Modulated electron-beam-induced current and cathodoluminescence
|
Yakimov, E.
|
|
1994
|
24 |
1-3 |
p. 23-27
5 p.
|
artikel
|
| 35 |
Monte Carlo simulation of the minority-carrier recombination at and around grain boundaries surrounded by a denuded zone revealed by light-beam-induced current mapping
|
Stemmer, Michael
|
|
1994
|
24 |
1-3 |
p. 180-183
4 p.
|
artikel
|
| 36 |
On the effect of the recombination within the depletion zone on the EBIC signal at Schottky contact
|
Beggah, Y.
|
|
1994
|
24 |
1-3 |
p. 101-104
4 p.
|
artikel
|
| 37 |
Optical-beam-induced current and photoluminescence techniques for localization of crystallographic defects in optoelectronic devices
|
Montangero, P.
|
|
1994
|
24 |
1-3 |
p. 175-179
5 p.
|
artikel
|
| 38 |
Optical characterization of deep states associated with oxidation-induced stacking faults in silicon
|
Castaldini, A.
|
|
1994
|
24 |
1-3 |
p. 170-174
5 p.
|
artikel
|
| 39 |
Organizers and sponsors
|
|
|
1994
|
24 |
1-3 |
p. x-
1 p.
|
artikel
|
| 40 |
Photothermal scanning near-field microscopy
|
Stopka, M.
|
|
1994
|
24 |
1-3 |
p. 226-228
3 p.
|
artikel
|
| 41 |
Quantitative studies of beam-induced defects in III–V compounds by cathodoluminescence and transmission electron microscopy
|
Holt, D.B.
|
|
1994
|
24 |
1-3 |
p. 130-134
5 p.
|
artikel
|
| 42 |
Recombination activity of “clean” and contaminated misfit dislocations in Si(Ge) structures
|
Kittler, M.
|
|
1994
|
24 |
1-3 |
p. 52-55
4 p.
|
artikel
|
| 43 |
Scanning deep-level transient spectroscopy investigations on gallium arsenide
|
Breitenstein, O.
|
|
1994
|
24 |
1-3 |
p. 28-34
7 p.
|
artikel
|
| 44 |
Scanning electron acoustic microscopy of electronic materials
|
Piqueras, J.
|
|
1994
|
24 |
1-3 |
p. 209-212
4 p.
|
artikel
|
| 45 |
Scanning force microscopy of semiconductor materials and devices
|
Balk, L.J.
|
|
1994
|
24 |
1-3 |
p. 203-208
6 p.
|
artikel
|
| 46 |
Spatially resolved photoluminescence and electron-beam-induced current studies of a coincidence ϵ = 25 silicon bicrystal
|
Rizk, R.
|
|
1994
|
24 |
1-3 |
p. 184-187
4 p.
|
artikel
|
| 47 |
Study of defects in implanted GaAs: Te by cathodoluminescence
|
Méndez, B.
|
|
1994
|
24 |
1-3 |
p. 138-140
3 p.
|
artikel
|
| 48 |
Subject index of volume 24
|
|
|
1994
|
24 |
1-3 |
p. 235-239
5 p.
|
artikel
|
| 49 |
Theory of electron-beam-induced current and cathodoluminescence imaging of crystal defects: some new results
|
Pasemann, L
|
|
1994
|
24 |
1-3 |
p. 15-22
8 p.
|
artikel
|
| 50 |
The relation between EBIC contrast and recombination velocity of a grain boundary
|
Donolato, C.
|
|
1994
|
24 |
1-3 |
p. 61-63
3 p.
|
artikel
|
| 51 |
Two types of electron-beam-induced current behaviour of misfit dislocations in Si(Ge): experimental observations and modelling
|
Kittler, M.
|
|
1994
|
24 |
1-3 |
p. 78-81
4 p.
|
artikel
|
| 52 |
What information on extended defects do we obtain from beam-injection methods?
|
Alexander, H.
|
|
1994
|
24 |
1-3 |
p. 1-7
7 p.
|
artikel
|
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