| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Applications of GaAs grown at a low temperature by molecular beam epitaxy
|
Mishra, Umesh K.
|
|
1993
|
22 |
1 |
p. 72-77
6 p.
|
artikel
|
| 2 |
Author index of volume 22, number 1
|
|
|
1993
|
22 |
1 |
p. 103-
1 p.
|
artikel
|
| 3 |
Basic principles governing the surface atomic structure of zinc blende semiconductors
|
Lannoo, M.
|
|
1993
|
22 |
1 |
p. 1-8
8 p.
|
artikel
|
| 4 |
Editorial Board
|
|
|
1993
|
22 |
1 |
p. iii-
1 p.
|
artikel
|
| 5 |
Electrical conduction in low temperature grown InP
|
Khirouni, K.
|
|
1993
|
22 |
1 |
p. 86-88
3 p.
|
artikel
|
| 6 |
Electro-optical measurement of low temperature GaAs
|
Korona, K.P.
|
|
1993
|
22 |
1 |
p. 41-44
4 p.
|
artikel
|
| 7 |
EL2-like defects in low temperature GaAs
|
Kowalski, G.
|
|
1993
|
22 |
1 |
p. 27-30
4 p.
|
artikel
|
| 8 |
Extended defects and precipitates in LTGaAs, LTInAlAs and LTInP
|
Claverie, Alain
|
|
1993
|
22 |
1 |
p. 45-54
10 p.
|
artikel
|
| 9 |
GaAs, AlGaAs, and InGaAs epilayers containing As clusters: Semimetal/semiconductor composites
|
Melloch, M.R.
|
|
1993
|
22 |
1 |
p. 31-36
6 p.
|
artikel
|
| 10 |
Gallium vacancy related defects in silicon doped GaAs grown at low temperatures
|
McQuaid, S.A.
|
|
1993
|
22 |
1 |
p. 23-26
4 p.
|
artikel
|
| 11 |
Interfacial barrier characteristics of LTGaAs on low doped GaAsGaAs/nGaAs and LTGaAs/pGaAs layers
|
Lipka, K.M
|
|
1993
|
22 |
1 |
p. 55-60
6 p.
|
artikel
|
| 12 |
Low temperature chemical beam epitaxy of gallium phosphide/silicon heterostructures
|
Kelliher, J.T.
|
|
1993
|
22 |
1 |
p. 97-102
6 p.
|
artikel
|
| 13 |
Low temperature molecular beam epitaxy of Al(Ga)InAs on InP and its application to high electron mobility transistor structures
|
Künzel, H.
|
|
1993
|
22 |
1 |
p. 89-92
4 p.
|
artikel
|
| 14 |
LTMBE GaAs: present status and perspectives
|
Witt, Gerald L.
|
|
1993
|
22 |
1 |
p. 9-15
7 p.
|
artikel
|
| 15 |
Noise studies of HFETs on low temperature grown GaAs buffers and of MESFETs with low temperature grown GaAs passivation
|
van Rheenen, A.D.
|
|
1993
|
22 |
1 |
p. 82-85
4 p.
|
artikel
|
| 16 |
Optoelectronic applications of LTMBE III–V materials
|
Whitaker, John F.
|
|
1993
|
22 |
1 |
p. 61-67
7 p.
|
artikel
|
| 17 |
Organizers and sponsors
|
|
|
1993
|
22 |
1 |
p. viii-
1 p.
|
artikel
|
| 18 |
Photo-induced current transient spectroscopy of Al0.48In0.52As semi-insulating layers grown on InP by molecular beam epitaxy
|
Kalbousi, A.
|
|
1993
|
22 |
1 |
p. 93-96
4 p.
|
artikel
|
| 19 |
Point defects in III–V materials grown by molecular beam epitaxy at low temperature
|
Hautojärvi, P.
|
|
1993
|
22 |
1 |
p. 16-22
7 p.
|
artikel
|
| 20 |
Preface
|
von Bardeleben, H.J.
|
|
1993
|
22 |
1 |
p. vii-
1 p.
|
artikel
|
| 21 |
Semi-insulating GaAs made by As implantation and thermal annealing
|
Claverie, A.
|
|
1993
|
22 |
1 |
p. 37-40
4 p.
|
artikel
|
| 22 |
Subject index of volume 22, number 1
|
|
|
1993
|
22 |
1 |
p. 104-106
3 p.
|
artikel
|
| 23 |
Subpicosecond electric field dynamics in low-temperature-grown GaAs observed by reflective electro-optic sampling
|
Dekorsy, T.
|
|
1993
|
22 |
1 |
p. 68-71
4 p.
|
artikel
|
| 24 |
Temperature measurements of LT GaAs diodes
|
Westphalen, R.
|
|
1993
|
22 |
1 |
p. 78-81
4 p.
|
artikel
|
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