Digitale Bibliotheek
Sluiten Bladeren door artikelen uit een tijdschrift
 
Zoeken naar met titel:
ABCDEFGHIJKLMNOPQRSTUVWXYZ

     Tijdschrift beschrijving
       Alle jaargangen van het bijbehorende tijdschrift
         Alle afleveringen van het bijbehorende jaargang
                                       Alle artikelen van de bijbehorende aflevering
 
                             54 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Application of deep-level transient spectroscopy for monitoring point defects in III–V semiconductors Kamiński, P.
 1993
 20 1-2 p. 221-224
4 p.
 artikel
2 Atomic-scale simulation of lattice-mismatched heterostructures: case of CdTe/GaAs Djafari Rouhani, M.
 1993
 20 1-2 p. 88-90
3 p.
 artikel
3 Author index of volume 20, issues 1–2 1993
 20 1-2 p. 241-242
2 p.
 artikel
4 Be+ ion implantation in Ga(Al)Sb layers: radiation damage Pérotin, M.
 1993
 20 1-2 p. 53-57
5 p.
 artikel
5 Characterization of LEC GaAs by electron beam induced current analysis Frigeri, C.
 1993
 20 1-2 p. 175-179
5 p.
 artikel
6 Characterization of ohmic contacts on n- and p-type GaSb Villemain, E.
 1993
 20 1-2 p. 162-164
3 p.
 artikel
7 Characterization of the crystallographic defect structure in selected-area epitaxial growth of GaInAs on InP by metallo-organic chemical vapour deposition Mallard, R.E.
 1993
 20 1-2 p. 48-52
5 p.
 artikel
8 Characterization of the homogeneity of semi-insulating InP by the spatially resolved photocurrent Martín, P.
 1993
 20 1-2 p. 105-108
4 p.
 artikel
9 Concepts of ultrastable metal contacts and their evaluation Hartnagel, H.L.
 1993
 20 1-2 p. 141-143
3 p.
 artikel
10 Determination of refractive indexes of In0.52Al0.48As on InP in the wavelength range from 250 to 1900 nm by spectroscopic ellipsometry Dinges, H.W.
 1993
 20 1-2 p. 180-182
3 p.
 artikel
11 Editorial Board 1993
 20 1-2 p. iii-
1 p.
 artikel
12 Effective n-type doping of InP by the neutron transmutation technique Mari, B.
 1993
 20 1-2 p. 113-116
4 p.
 artikel
13 Electronic structure of (In,Ga) As(Ga, Al) As strained-layer quantum wells Dunstan, David J.
 1993
 20 1-2 p. 58-61
4 p.
 artikel
14 Evidence for non-uniform interface thickness in strained InGaAs/InP quantum wells Camassel, J.
 1993
 20 1-2 p. 62-65
4 p.
 artikel
15 EXMATEC'94 (Second Workshop on expert evaluation and control of compound semiconductor materials and technologies), Parma, Italy, May 17–20, 1994 1993
 20 1-2 p. 240-
1 p.
 artikel
16 First step of degradation mechanisms in AlGaAs/GaAs laser-like structures Sieber, B.
 1993
 20 1-2 p. 29-32
4 p.
 artikel
17 Foreword Krawczyk, S.K.
 1993
 20 1-2 p. ix-
1 p.
 artikel
18 From micro- to nanoelectronics: new technology requirements Van Rossum, M.
 1993
 20 1-2 p. 128-133
6 p.
 artikel
19 Hall mobility profiling in high electron mobility transistor structures Djamdji, F.
 1993
 20 1-2 p. 77-81
5 p.
 artikel
20 Improving the quality of microelectronic devices by strained layer epitaxy Beneking, Heinz
 1993
 20 1-2 p. 41-47
7 p.
 artikel
21 Interface properties of strained InGaAs/InP quantum wells grown by low pressure, metallo-organic vapour phase epitaxy Schwedler, R.
 1993
 20 1-2 p. 66-68
3 p.
 artikel
22 Investigation of stability of GaAs metal/electron/semiconductor field effect transistor gate contacts by high resolution transmission electron microscopy analysis Labat, N.
 1993
 20 1-2 p. 33-36
4 p.
 artikel
23 Investigation of the distribution of Fe in semi-insulating LEC-grown InP by photoluminescence and absorption imaging Wittmann, G.
 1993
 20 1-2 p. 91-93
3 p.
 artikel
24 Investigations of the n-GaAs-electrolyte interface using time-resolved photoluminescence Krüger, O.
 1993
 20 1-2 p. 232-239
8 p.
 artikel
25 Low frequency noise as a characterization tool for InP- and GaAs-based double-barrier resonant tunnelling diodes Deen, M.J.
 1993
 20 1-2 p. 207-213
7 p.
 artikel
26 Material related issues and their characterization with a view to III–V heterojunction device optimization Pavlidis, Dimitris
 1993
 20 1-2 p. 1-8
8 p.
 artikel
27 Materials problems for the development of InGaAs/InAlAs HEMT technology Zekentes, K.
 1993
 20 1-2 p. 21-25
5 p.
 artikel
28 Materials-related reliability aspects of III–V optical devices Ueda, O.
 1993
 20 1-2 p. 9-20
12 p.
 artikel
29 Microwave device for non-destructive magnetoresistance measurement of semiconducting layers Druon, C.
 1993
 20 1-2 p. 203-206
4 p.
 artikel
30 New method of deep level transient spectroscopy analysis: a five emission rate method Losson, E.
 1993
 20 1-2 p. 214-220
7 p.
 artikel
31 Non-destructive approaches to interdiffusion phenomena across GaInAs/GaInAsP interfaces: photoluminescence vs. Raman Peyre, H.
 1993
 20 1-2 p. 73-76
4 p.
 artikel
32 Optical characterization of Si wafers for ultralarge-scale integration Ogawa, T.
 1993
 20 1-2 p. 172-174
3 p.
 artikel
33 Optical non-desctructive tests for the evaluation of microprecipitates in semiconductors and devices Fillard, J.P.
 1993
 20 1-2 p. 165-171
7 p.
 artikel
34 Optoelectronic modulation spectroscopy (OEMS)—a new tool for device investigations di Marco, M.
 1993
 20 1-2 p. 225-231
7 p.
 artikel
35 Organizers and sponsors 1993
 20 1-2 p. x-
1 p.
 artikel
36 Paramagnetic anion antisites in neutron-irradiated InP: thermal recovery and photo-behaviour Goltzene, A.
 1993
 20 1-2 p. 117-120
4 p.
 artikel
37 Photoluminescence and photoacoustic investigation of residual defects in semi-insulating LEC GaAs Ka, O.
 1993
 20 1-2 p. 100-104
5 p.
 artikel
38 Photoluminescence characterization of structures obtained by multipolar plasma oxidation of InP Bath, A.
 1993
 20 1-2 p. 148-152
5 p.
 artikel
39 Physicochemical characterization by means of IR absorption spectroscopy of Si3N4 thin films obtained by chemical vapour deposition assisted by in situ electrical disharge Balland, B.
 1993
 20 1-2 p. 153-156
4 p.
 artikel
40 Raman characterization of GaAs doped with Sn by laser assisted diffusion Jiménez, J.
 1993
 20 1-2 p. 144-147
4 p.
 artikel
41 Raman investigation of the photocarrier properties in both undoped and Fe-doped InP substrates Boudart, B.
 1993
 20 1-2 p. 109-112
4 p.
 artikel
42 Raman scattering in In x Ga1−x As/GaAs superlattices grown by molecular beam epitaxy Constant, M.
 1993
 20 1-2 p. 69-72
4 p.
 artikel
43 Recent advances in the assessment of GaAs substrate quality by scanning photoluminescence Schohe, K.
 1993
 20 1-2 p. 121-127
7 p.
 artikel
44 Relating μ-wave mapped data to physical parameters for MODFETs Braunstein, Jürgen
 1993
 20 1-2 p. 37-40
4 p.
 artikel
45 Scanning IR microscopy and transmission electron microscopy studies of inhomogeneities in LEC S-doped InP Jin, N.Y.
 1993
 20 1-2 p. 94-99
6 p.
 artikel
46 Scanning photoluminescence characterization of iron-doped gas source molecular beam epitaxy indium phosphide layers L'Haridon, H.
 1993
 20 1-2 p. 82-87
6 p.
 artikel
47 Studies of GaAs surfaces by scanning tunnelling induced photon emission Horn, J.
 1993
 20 1-2 p. 183-185
3 p.
 artikel
48 Subject index of volume 20, issues 1–2 1993
 20 1-2 p. 243-248
6 p.
 artikel
49 The effects of probe power on the spatial variation of the room temperature photoluminescence wavelength of an InGaAsP epitaxial structure Moore, C.J.L.
 1993
 20 1-2 p. 190-197
8 p.
 artikel
50 The effects of probe spot size and sampling grid density on process control values derived from photoluminescence mapping Moore, C.J.L.
 1993
 20 1-2 p. 198-202
5 p.
 artikel
51 Theoretical and experimental study of failure mechanisms in r.f. reliability life tested high electron mobility transistors Anderson, W.T.
 1993
 20 1-2 p. 26-28
3 p.
 artikel
52 Transport processes in Au/n-InP and Au/oxide/n-InP devices treated in oxygen multipolar plasma Renard, P.
 1993
 20 1-2 p. 157-161
5 p.
 artikel
53 UVCVD dielectric films for InP-based optoelectronic devices Post, G.
 1993
 20 1-2 p. 134-140
7 p.
 artikel
54 Whole wafer assessment of electronic materials by scanning photoluminescence and surface photovoltage Bugajski, Maciej
 1993
 20 1-2 p. 186-189
4 p.
 artikel
                             54 gevonden resultaten
 
 Koninklijke Bibliotheek - Nationale Bibliotheek van Nederland