| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Admittance spectroscopy of GaAs/InGaP MQW structures
|
Gombia, E.
|
|
2008
|
147 |
2-3 |
p. 171-174
4 p.
|
artikel
|
| 2 |
A neural approach to study the scaling capability of the undoped Double-Gate and cylindrical Gate All Around MOSFETs
|
Djeffal, F.
|
|
2008
|
147 |
2-3 |
p. 239-244
6 p.
|
artikel
|
| 3 |
A three steps procedure (swelling–poling–deswelling) to produce a stable alignment of second order NLO-phores covalently attached to a cross-linked polymeric network
|
Proutière, Séverine
|
|
2008
|
147 |
2-3 |
p. 293-297
5 p.
|
artikel
|
| 4 |
A two-step annealing process for Ni silicide formation in an ultra-thin body RF SOI MOSFET
|
Ahn, Chang-Geun
|
|
2008
|
147 |
2-3 |
p. 183-186
4 p.
|
artikel
|
| 5 |
Author Index
|
|
|
2008
|
147 |
2-3 |
p. 312-314
3 p.
|
artikel
|
| 6 |
Cathodoluminescence study of inductively coupled plasma (ICP) etched InP waveguide structures: Influence of the ridge dimension and dielectric capping
|
Avella, M.
|
|
2008
|
147 |
2-3 |
p. 136-140
5 p.
|
artikel
|
| 7 |
Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells
|
Wang, T.S.
|
|
2008
|
147 |
2-3 |
p. 131-135
5 p.
|
artikel
|
| 8 |
Characterization of 2D macroporous silicon photonic crystals: Improving the photonic band identification in angular-dependent reflection spectroscopy in the mid-IR
|
Král, Zdeněk
|
|
2008
|
147 |
2-3 |
p. 179-182
4 p.
|
artikel
|
| 9 |
Deep traps and optical properties of partially strain-relaxed InGaAs/GaAs heterostructures
|
Gelczuk, Ł.
|
|
2008
|
147 |
2-3 |
p. 166-170
5 p.
|
artikel
|
| 10 |
Doping dependence of LO-phonon depletion scheme THz quantum-cascade lasers
|
Andrews, Aaron Maxwell
|
|
2008
|
147 |
2-3 |
p. 152-155
4 p.
|
artikel
|
| 11 |
Doping of CdS nanoparticles
|
Osipyonok, N.M.
|
|
2008
|
147 |
2-3 |
p. 254-257
4 p.
|
artikel
|
| 12 |
Editorial Board
|
|
|
2008
|
147 |
2-3 |
p. CO2-
1 p.
|
artikel
|
| 13 |
Electrochemical deposition of Te and electroless deposition of Se nanoparticles in etched tracks of Au+ ions in SiO2 layer on n-Si(100) wafers
|
Ivanova, Yu.A.
|
|
2008
|
147 |
2-3 |
p. 271-275
5 p.
|
artikel
|
| 14 |
Electronic spectral densities in quantum dots
|
Král, Karel
|
|
2008
|
147 |
2-3 |
p. 267-270
4 p.
|
artikel
|
| 15 |
Evaluation of the electrical conductivity of nano-porous silicon from photoluminescence and particle size distribution
|
Bouaïcha, M.
|
|
2008
|
147 |
2-3 |
p. 235-238
4 p.
|
artikel
|
| 16 |
Fabrication of SiO2 nano-dots by block copolymer lithography and liquid phase deposition
|
Lee, Kyoung Nam
|
|
2008
|
147 |
2-3 |
p. 209-212
4 p.
|
artikel
|
| 17 |
Fast polymer nanorectifiers for inductively coupled RFID tags
|
Majewski, L.A.
|
|
2008
|
147 |
2-3 |
p. 289-292
4 p.
|
artikel
|
| 18 |
Ge quantum-dot polysilicon emitter heterojunction phototransistors for 1.31–1.55μm light detection
|
Wei, Rongshan
|
|
2008
|
147 |
2-3 |
p. 187-190
4 p.
|
artikel
|
| 19 |
Germanium nanoparticles formation in silicon dioxide layer by multi-energy implantation of Ge negative ions and their photo-luminescence
|
Arai, Nobutoshi
|
|
2008
|
147 |
2-3 |
p. 230-234
5 p.
|
artikel
|
| 20 |
Growth and assessment of InGaN quantum dots in a microcavity: A blue single photon source
|
Oliver, R.A.
|
|
2008
|
147 |
2-3 |
p. 108-113
6 p.
|
artikel
|
| 21 |
InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance
|
Hazdra, P.
|
|
2008
|
147 |
2-3 |
p. 175-178
4 p.
|
artikel
|
| 22 |
Influence of the crystallization process on the luminescence of multilayers of SiGe nanocrystals embedded in SiO2
|
Avella, M.
|
|
2008
|
147 |
2-3 |
p. 200-204
5 p.
|
artikel
|
| 23 |
InSb nanocrystals embedded in SiO 2 : Strain and melting-point hysteresis
|
Têtu, Amélie
|
|
2008
|
147 |
2-3 |
p. 141-143
3 p.
|
artikel
|
| 24 |
Investigation of nanocrystalline Pbs/n-Si heterostructures for optoelectronic applications
|
Buda, Ma.
|
|
2008
|
147 |
2-3 |
p. 284-288
5 p.
|
artikel
|
| 25 |
Investigations of organic light emitting diodes with CdSe(ZnS) quantum dots
|
Lee, C.W.
|
|
2008
|
147 |
2-3 |
p. 307-311
5 p.
|
artikel
|
| 26 |
Investigations of porous InP properties by XRD, IR, USXES, XANES and PL techniques
|
Domashevskaya, E.P.
|
|
2008
|
147 |
2-3 |
p. 144-147
4 p.
|
artikel
|
| 27 |
Magnetic field sensitivity of In0.75Ga0.25As Hall nanoprobes
|
Candini, Andrea
|
|
2008
|
147 |
2-3 |
p. 148-151
4 p.
|
artikel
|
| 28 |
Magneto-optical and tunable laser excitation spectroscopy of spin-injection and spin loss from Zn(Cd)MnSe diluted magnetic quantum well to CdSe non-magnetic quantum dots
|
Dagnelund, D.
|
|
2008
|
147 |
2-3 |
p. 262-266
5 p.
|
artikel
|
| 29 |
MBE grown optically pumped semiconductor disk lasers emitting at 940nm
|
Lyytikäinen, Jari
|
|
2008
|
147 |
2-3 |
p. 161-165
5 p.
|
artikel
|
| 30 |
Memory effects in optically active CdSe nanocrystal doped MOS structures
|
Achtstein, A.W.
|
|
2008
|
147 |
2-3 |
p. 249-253
5 p.
|
artikel
|
| 31 |
Nanoporous silicon explosive devices
|
Plessis, Monuko du
|
|
2008
|
147 |
2-3 |
p. 226-229
4 p.
|
artikel
|
| 32 |
New approach of Nano-Selective Area Growth (NSAG) for a precise control of GaN nanodots grown by MOVPE
|
Martin, J.
|
|
2008
|
147 |
2-3 |
p. 114-117
4 p.
|
artikel
|
| 33 |
[No title]
|
Tomm, Jens W.
|
|
2008
|
147 |
2-3 |
p. 107-
1 p.
|
artikel
|
| 34 |
Optimization of electroluminescent diodes based on pm-SiC:H deposited at low temperature
|
Stenger, I.
|
|
2008
|
147 |
2-3 |
p. 245-248
4 p.
|
artikel
|
| 35 |
Optimization of the luminescence emission of Si nanocrystals synthesized from non-stoichiometric Si oxides using a Central Composite Design of the deposition process
|
Morana, B.
|
|
2008
|
147 |
2-3 |
p. 195-199
5 p.
|
artikel
|
| 36 |
PE-CVD fabrication of germanium nanoclusters for memory applications
|
Dürkop, T.
|
|
2008
|
147 |
2-3 |
p. 213-217
5 p.
|
artikel
|
| 37 |
Polyfluorene nanowires with pronounced axial texturing prepared by melt-assisted template wetting
|
O’ Carroll, Deirdre
|
|
2008
|
147 |
2-3 |
p. 298-302
5 p.
|
artikel
|
| 38 |
Radiation hardness of GeSi heterostructures with thin Ge layers
|
Leitão, J.P.
|
|
2008
|
147 |
2-3 |
p. 191-194
4 p.
|
artikel
|
| 39 |
Semiconductor saturable absorbers with recovery time controlled by lattice mismatch and band-gap engineering
|
Suomalainen, S.
|
|
2008
|
147 |
2-3 |
p. 156-160
5 p.
|
artikel
|
| 40 |
Size dependent exciton energy of various technologically important colloidal quantum dots
|
Baskoutas, Sotirios
|
|
2008
|
147 |
2-3 |
p. 280-283
4 p.
|
artikel
|
| 41 |
Stable ultraviolet photoluminescence of nanoporous silicon
|
Gorelkinskii, Yu.V.
|
|
2008
|
147 |
2-3 |
p. 258-261
4 p.
|
artikel
|
| 42 |
Structural and optical properties of high density Si-ncs synthesized in SiN x :H by remote PECVD and annealing
|
Carrada, M.
|
|
2008
|
147 |
2-3 |
p. 218-221
4 p.
|
artikel
|
| 43 |
Structure and optical properties of silicon nanopowders
|
Terekhov, V.A.
|
|
2008
|
147 |
2-3 |
p. 222-225
4 p.
|
artikel
|
| 44 |
Subject Index
|
|
|
2008
|
147 |
2-3 |
p. 315-321
7 p.
|
artikel
|
| 45 |
The effect of the individual species of the N plasma on the characteristics of InAsN quantum dots grown by MBE
|
Gargallo-Caballero, R.
|
|
2008
|
147 |
2-3 |
p. 118-123
6 p.
|
artikel
|
| 46 |
Thermally evaporated In2O3 nanoloquats with oxygen flow-dependent optical emissions
|
Chu, Chia-Pu
|
|
2008
|
147 |
2-3 |
p. 276-279
4 p.
|
artikel
|
| 47 |
Visible light effect on the performance of photocouplers/phototransistors based on pentacene
|
El Amrani, Aumeur
|
|
2008
|
147 |
2-3 |
p. 303-306
4 p.
|
artikel
|
| 48 |
Wavelength tunable InAs/InP(100) quantum dots in 1.55-μm telecom devices
|
Anantathanasarn, S.
|
|
2008
|
147 |
2-3 |
p. 124-130
7 p.
|
artikel
|
| 49 |
Wide-band reflection nanoporous silicon multilayers with ellipsometric investigation of the material monolayer components
|
Xifré-Pérez, E.
|
|
2008
|
147 |
2-3 |
p. 205-208
4 p.
|
artikel
|
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