| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Atomic-scale characterization and control of semiconductor interfaces grown by molecular beam epitaxy: interface roughness and optical and electronic properties
|
Tanaka, M
|
|
1992
|
14 |
3 |
p. 304-310
7 p.
|
artikel
|
| 2 |
Electronic excitation energies in Schottky barriers
|
Charlesworth, J.P.A.
|
|
1992
|
14 |
3 |
p. 262-265
4 p.
|
artikel
|
| 3 |
Electronic structure in confined volumes using spatially resolved electron energy loss scattering
|
Batson, P.E.
|
|
1992
|
14 |
3 |
p. 297-303
7 p.
|
artikel
|
| 4 |
Epitaxial metal-semiconductor interfaces
|
Weitering, H.H.
|
|
1992
|
14 |
3 |
p. 281-290
10 p.
|
artikel
|
| 5 |
Fabrication of relaxed GeSi buffer layers on Si(100) with low threading dislocation density
|
Xie, Y.H.
|
|
1992
|
14 |
3 |
p. 332-335
4 p.
|
artikel
|
| 6 |
Heteroepitaxial growth of polar semiconductors on non-polar substrates
|
Biegelsen, D.K.
|
|
1992
|
14 |
3 |
p. 317-331
15 p.
|
artikel
|
| 7 |
In situ processing of semiconductors
|
Harriott, L.R.
|
|
1992
|
14 |
3 |
p. 336-345
10 p.
|
artikel
|
| 8 |
Microscopic theory of heterojunction band offsets
|
Hybertsen, Mark S.
|
|
1992
|
14 |
3 |
p. 254-261
8 p.
|
artikel
|
| 9 |
On the inhomogeneity of Schottky barriers
|
Tung, R.T.
|
|
1992
|
14 |
3 |
p. 266-280
15 p.
|
artikel
|
| 10 |
Scanning tunneling microscopy studies of the initial stages of germanium growth on Si(001)
|
Mo, Y.W.
|
|
1992
|
14 |
3 |
p. 311-316
6 p.
|
artikel
|
| 11 |
Theoretical modeling of heteroepitaxial growth initiation
|
Kaxiras, Efthimios
|
|
1992
|
14 |
3 |
p. 245-253
9 p.
|
artikel
|
| 12 |
Theory of ballistic electron emission spectroscopy of NiSi2Si(111) interfaces
|
Stiles, M.D.
|
|
1992
|
14 |
3 |
p. 291-296
6 p.
|
artikel
|
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