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                             40 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Analysis of temperature and impurity distributions in a unidirectional-solidification process for multi-crystalline silicon of solar cells by a global model Kakimoto, Koichi
 2006
 134 2-3 p. 269-272
4 p.
 artikel
2 Author index of volume 134 2006
 134 2-3 p. 303-304
2 p.
 artikel
3 Control of metal impurities in “dirty” multicrystalline silicon for solar cells Istratov, A.A.
 2006
 134 2-3 p. 282-286
5 p.
 artikel
4 Determination of low concentrations of N and C in CZ-Si by precise FT-IR spectroscopy Akhmetov, V.D.
 2006
 134 2-3 p. 207-212
6 p.
 artikel
5 Direct carbothermal receiving of solar grade silicon Tynyshtykbaev, K.B.
 2006
 134 2-3 p. 296-302
7 p.
 artikel
6 Direct observation of vacancy in silicon using sub-Kelvin ultrasonic measurements Goto, Terutaka
 2006
 134 2-3 p. 233-239
7 p.
 artikel
7 Editorial Board 2006
 134 2-3 p. CO2-
1 p.
 artikel
8 Effects of compressive stress on the electronic states and atomic configurations of the Pt–H2 defect in silicon Kamiura, Yoichi
 2006
 134 2-3 p. 213-217
5 p.
 artikel
9 Electrical properties of laser-ablation-initiated self-organized nanostructures on silicon surface Reif, Juergen
 2006
 134 2-3 p. 114-117
4 p.
 artikel
10 Epitaxial engineered solutions for ITRS scaling roadblocks Harper, Robert
 2006
 134 2-3 p. 154-158
5 p.
 artikel
11 Exciton luminescence from silicon nanocrystals embedded in silicon nitride film Parm, I.O.
 2006
 134 2-3 p. 130-132
3 p.
 artikel
12 Extremely proximity gettering for semiconductor devices Park, Jea-Gun
 2006
 134 2-3 p. 249-256
8 p.
 artikel
13 Formation of Si twinning-superlattice: First step towards Si polytype growth Fissel, A.
 2006
 134 2-3 p. 138-141
4 p.
 artikel
14 Frequency and voltage dependent surface states and series resistance of novel Si solar cells Tüzün, Ö.
 2006
 134 2-3 p. 291-295
5 p.
 artikel
15 Future semiconductor material requirements and innovations as projected in the ITRS 2005 roadmap Arden, Wolfgang
 2006
 134 2-3 p. 104-108
5 p.
 artikel
16 Improved CMOS performance via enhanced carrier mobility Mooney, P.M.
 2006
 134 2-3 p. 133-137
5 p.
 artikel
17 Impurity interaction with point defects in the Si–SiO2 structures and its influence on the interface properties Kropman, D.
 2006
 134 2-3 p. 222-226
5 p.
 artikel
18 Infrared absorption peaks in nitrogen doped CZ silicon Inoue, N.
 2006
 134 2-3 p. 202-206
5 p.
 artikel
19 Interface properties and passivation of p-Si(111) surfaces by electrochemical organic layer deposition Güell, A.G.
 2006
 134 2-3 p. 273-276
4 p.
 artikel
20 Modeling the effects of the vertical temperature gradient in the furnace in an edge-defined film-fed growth technique Epure, S.
 2006
 134 2-3 p. 277-281
5 p.
 artikel
21 Nanocrystalline silicon films as multifunctional material for optoelectronic and photovoltaic applications Pizzini, S.
 2006
 134 2-3 p. 118-124
7 p.
 artikel
22 Nitrogen-doped Czochralski silicon treated in rapid thermal process Yang, Deren
 2006
 134 2-3 p. 193-201
9 p.
 artikel
23 Oxygen transport in Czochralski silicon investigated by dislocation locking experiments Murphy, J.D.
 2006
 134 2-3 p. 176-184
9 p.
 artikel
24 Photoluminescence evaluation of light element impurities in ultrathin SOI wafers by luminescence activation using electron irradiation Nakagawa, S.
 2006
 134 2-3 p. 172-175
4 p.
 artikel
25 Preface Kissinger, Gudrun
 2006
 134 2-3 p. 103-
1 p.
 artikel
26 Properties of vacancies and self-interstitials in silicon deduced from crystal growth, wafer processing, self-diffusion and metal diffusion Voronkov, V.V.
 2006
 134 2-3 p. 227-232
6 p.
 artikel
27 Selective epitaxial growth of SiGe for strained Si transistors Ning, X.J.
 2006
 134 2-3 p. 165-171
7 p.
 artikel
28 Silicon for photovoltaic applications Müller, A.
 2006
 134 2-3 p. 257-262
6 p.
 artikel
29 Stability of silicon based homojunction and heterojunction solar cells under space conditions Neitzert, Heinz-Christoph
 2006
 134 2-3 p. 263-268
6 p.
 artikel
30 Strained Si engineering for nanoscale MOSFETs Park, Jea-Gun
 2006
 134 2-3 p. 142-153
12 p.
 artikel
31 Strain relaxation of Ge-implanted silicon wafers Xiao, Qinghua
 2006
 134 2-3 p. 159-164
6 p.
 artikel
32 Stress dependent structure of annealed nitrogen-doped Cz-Si Misiuk, A.
 2006
 134 2-3 p. 218-221
4 p.
 artikel
33 Stress induced anisotropy of vacancy interaction and clustering in uniaxially loaded Si monocrystal Ganchenkova, M.G.
 2006
 134 2-3 p. 244-248
5 p.
 artikel
34 Structure of biomembrane-on-silicon hybrids derived from X-ray reflectometry Birkholz, M.
 2006
 134 2-3 p. 125-129
5 p.
 artikel
35 Study of process induced variation in the minority carrier lifetime of silicon during solar cells fabrication Dhungel, Suresh Kumar
 2006
 134 2-3 p. 287-290
4 p.
 artikel
36 Subject index of volume 134 2006
 134 2-3 p. 305-310
6 p.
 artikel
37 The effect of carbon and antimony on grown-in microdefects in Czochralski silicon crystals Porrini, M.
 2006
 134 2-3 p. 185-188
4 p.
 artikel
38 Thermal donor formation in direct-plasma hydrogenated n-type Czochralski silicon Simoen, E.
 2006
 134 2-3 p. 189-192
4 p.
 artikel
39 Towards silicon based light emitter utilising the radiation from dislocation networks Arguirov, T.
 2006
 134 2-3 p. 109-113
5 p.
 artikel
40 Vacancies in defect-free zone of point-defect-controlled CZ silicon observed by low-temperature ultrasonic measurements Yamada-Kaneta, Hiroshi
 2006
 134 2-3 p. 240-243
4 p.
 artikel
                             40 gevonden resultaten
 
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