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                             68 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Ab initio calculations of the atomic and electronic structure of layered Ba0.5Sr0.5TiO3 structures Piskunov, S.
2005
118 1-3 p. 15-18
4 p.
artikel
2 Agglomeration characteristic of particles in alumina slurry by addition of chemicals and milling process for Cu CMP Choi, Min-Ho
2005
118 1-3 p. 306-309
4 p.
artikel
3 Application of tungsten slurry for copper-chemical mechanical polishing Seo, Yong-Jin
2005
118 1-3 p. 285-288
4 p.
artikel
4 A systematic study of the chemical etching process on periodically poled lithium niobate structures Argiolas, N.
2005
118 1-3 p. 150-154
5 p.
artikel
5 Atomic layer deposition rate, phase composition and performance of HfO2 films on noble metal and alkoxylated silicon substrates Kukli, Kaupo
2005
118 1-3 p. 112-116
5 p.
artikel
6 author index 2005
118 1-3 p. 310-311
2 p.
artikel
7 Chromium-doped titanium oxide thin films Mardare, Diana
2005
118 1-3 p. 187-191
5 p.
artikel
8 Chromium oxides thin films prepared and coated in situ with gold by pulsed laser deposition Stanoi, D.
2005
118 1-3 p. 74-78
5 p.
artikel
9 Comparision of residual stress and optical properties in Ta2O5 thin films deposited by single and dual ion beam sputtering Yoon, S.G.
2005
118 1-3 p. 234-237
4 p.
artikel
10 Compositional and structural analysis of iron doped X-cut lithium niobate crystals Sada, C.
2005
118 1-3 p. 155-159
5 p.
artikel
11 Dependence of oxygen flow rate on piezoelectric photothermal spectra of ZnO thin films grown by a reactive plasma deposition Kakeno, T.
2005
118 1-3 p. 70-73
4 p.
artikel
12 Dependency of the properties of Sr x Bi y Ta2O9 thin films on the Sr and Bi stoichiometry Viapiana, Matteo
2005
118 1-3 p. 34-38
5 p.
artikel
13 Deposition of nanocomposite Zr–ZrO2 films by reactive cathodic vacuum arc evaporation Čyvienė, J.
2005
118 1-3 p. 238-241
4 p.
artikel
14 Development of a novel gas sensor based on oxide thick films Arshak, K.
2005
118 1-3 p. 44-49
6 p.
artikel
15 Doped versus pure TGS crystals Berbecaru, C.
2005
118 1-3 p. 141-146
6 p.
artikel
16 Dynamic scaling of hysteresis dispersion in ferroelectrics Liu, J.-M.
2005
118 1-3 p. 2-6
5 p.
artikel
17 Editorial Fragalà, Ignazio L.
2005
118 1-3 p. 1-
1 p.
artikel
18 Effect of hydrogen plasma treatment on the electrical properties of sputtered N-doped cuprous oxide films Lu, Yang-Ming
2005
118 1-3 p. 179-182
4 p.
artikel
19 Effect of interlayer composition on passivation of (100)Si/HfO2 interface states by hydrogen Truong, L.
2005
118 1-3 p. 197-200
4 p.
artikel
20 Effect of lanthanides-substituted on ferroelectric properties of bismuth titanate thin films prepared by metalorganic decomposition Kim, Kyoung-Tae
2005
118 1-3 p. 229-233
5 p.
artikel
21 Effect of nonionic surfactants on the stability of alumina slurry for Cu CMP Lee, Do-Won
2005
118 1-3 p. 293-300
8 p.
artikel
22 Effects of deposition temperature on the microstructural and electrical properties of praseodymium oxide-based films Nigro, Raffaella Lo
2005
118 1-3 p. 117-121
5 p.
artikel
23 Effects of different oxidizers on the W-CMP performance Seo, Yong-Jin
2005
118 1-3 p. 281-284
4 p.
artikel
24 Effects of the thermal annealing processes on praseodymium oxide based films grown on silicon substrates Lo Nigro, Raffaella
2005
118 1-3 p. 192-196
5 p.
artikel
25 Fabrication and characterization of CuAlO2 transparent thin films prepared by spray technique Bouzidi, C.
2005
118 1-3 p. 259-263
5 p.
artikel
26 Ferroelectric solid solutions (Ba,Sr)TiO3 for microwave applications Alexandru, H.V.
2005
118 1-3 p. 92-96
5 p.
artikel
27 Fluorine-free and fluorine containing MOCVD precursors for electronic oxides: a comparison Bedoya, C.
2005
118 1-3 p. 264-269
6 p.
artikel
28 Imaging and investigation of non-uniform distributions of electrophysical properties of insulator–semiconductor structures with thin oxides Popov, V.M.
2005
118 1-3 p. 170-174
5 p.
artikel
29 Impact of physical and electrical thickness scaling on the reliability of plasma-nitrided gate dielectrics in a 90 nm SOI manufacturing technology Geilenkeuser, R.
2005
118 1-3 p. 50-54
5 p.
artikel
30 Influence of structure changes of oxide films on their physical properties Mukashev, B.N.
2005
118 1-3 p. 164-169
6 p.
artikel
31 Influence of the oxygen/argon ratio on the properties of sputtered hafnium oxide Pereira, L.
2005
118 1-3 p. 210-213
4 p.
artikel
32 Infrared spectra of proton-exchanged waveguides in LiNbO3 and LiTaO3 Kuneva, M.K.
2005
118 1-3 p. 301-305
5 p.
artikel
33 Inside front cover 2005
118 1-3 p. CO2-
1 p.
artikel
34 Interface reactivity of Pr and SiO2 at 4H-SiC(0001) Schmeißer, D.
2005
118 1-3 p. 19-22
4 p.
artikel
35 Investigations on the optical constants of indium oxide thin films prepared by ultrasonic spray pyrolysis Girtan, Mihaela
2005
118 1-3 p. 175-178
4 p.
artikel
36 ITO films with enhanced electrical properties deposited on unheated ZnO-coated polymer substrates Nunes de Carvalho, C.
2005
118 1-3 p. 66-69
4 p.
artikel
37 ITO properties on anisotropic flexible transparent cellulosic substrates under different stress conditions Amaral, A.
2005
118 1-3 p. 183-186
4 p.
artikel
38 Microstructure and dielectric properties of compositionally-graded (Ba1−x Sr x )TiO3 thin films Zhu, Xinhua
2005
118 1-3 p. 219-224
6 p.
artikel
39 Microstructure of (110)-oriented epitaxial SrRuO3 thin films grown on off-cut single crystal YSZ(100) substrates Zhu, Xinhua
2005
118 1-3 p. 60-65
6 p.
artikel
40 Microwave loss mechanisms in Ba0.25Sr0.75TiO3 films Vorobiev, A.
2005
118 1-3 p. 214-218
5 p.
artikel
41 Mixed and carbon filled oxide materials as gamma radiation sensors Arshak, K.
2005
118 1-3 p. 275-280
6 p.
artikel
42 NH3-RTP grown ultra-thin oxynitride layers for MOS gate applications Chung, H.Y.A.
2005
118 1-3 p. 55-59
5 p.
artikel
43 Nickel-doped (Zr0.8, Sn0.2)TiO4 for microwave and millimeter-wave applications Ioachim, A.
2005
118 1-3 p. 205-209
5 p.
artikel
44 Optimization of SiN thin film for high index contrast planar silica waveguides Kim, Y.T.
2005
118 1-3 p. 242-245
4 p.
artikel
45 Oxidation of macroporous silicon for thick thermal insulation Kan, P.Y.Y.
2005
118 1-3 p. 289-292
4 p.
artikel
46 Oxynitrides on 4H–SiC(0001) Hoffmann, P.
2005
118 1-3 p. 270-274
5 p.
artikel
47 Polarization comparison of Pb(Zr,Ti)O3 and Bi4Ti3O12-based ferroelectrics Funakubo, Hiroshi
2005
118 1-3 p. 23-27
5 p.
artikel
48 Porogen concentration and its desorbing temperature dependence in porous silica film incorporated with ethylene groups Uchida, Yasutaka
2005
118 1-3 p. 250-252
3 p.
artikel
49 Preparation of La0.5Sr0.5CoO3 powders and thin film from a new aqueous solution–gel precursor Pagnaer, J.
2005
118 1-3 p. 79-83
5 p.
artikel
50 Properties of La and Nb-modified PZT thin films grown by radio frequency assisted pulsed laser deposition Verardi, P.
2005
118 1-3 p. 39-43
5 p.
artikel
51 Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies Dubourdieu, C.
2005
118 1-3 p. 105-111
7 p.
artikel
52 γ-Radiation influence on the photoelectrical properties of oxide–p-InSe heterostructure Kovalyuk, Z.D.
2005
118 1-3 p. 147-149
3 p.
artikel
53 Reaction mechanism of a lanthanum precursor in liquid source metalorganic chemical vapor deposition Nakamura, Toshihiro
2005
118 1-3 p. 253-258
6 p.
artikel
54 Recent developments in the MOCVD and ALD of rare earth oxides and silicates Jones, Anthony C.
2005
118 1-3 p. 97-104
8 p.
artikel
55 Room temperature dc and ac electrical behaviour of undoped ZnO films under UV light Martins, R.
2005
118 1-3 p. 135-140
6 p.
artikel
56 Self-organization of ferroelectric grains in self-supported nanocrystalline films Lyahovitskaya, V.
2005
118 1-3 p. 12-14
3 p.
artikel
57 SnO2 films: formation, electrical and optical properties Gorley, P.M.
2005
118 1-3 p. 160-163
4 p.
artikel
58 Solid phase crystallisation of HfO2 thin films Modreanu, M.
2005
118 1-3 p. 127-131
5 p.
artikel
59 Structural analysis of the Mn–Zn ferrites using XRD technique Ghazanfar, Uzma
2005
118 1-3 p. 84-86
3 p.
artikel
60 Structural and dielectric properties of ZrTiO4 and Zr0.8Sn0.2TiO4 deposited by pulsed laser deposition Viticoli, M.
2005
118 1-3 p. 87-91
5 p.
artikel
61 Study of room temperature dc resistivity in comparison with activation energy and drift mobility of NiZn ferrites Ghazanfar, Uzma
2005
118 1-3 p. 132-134
3 p.
artikel
62 subject index 2005
118 1-3 p. 312-317
6 p.
artikel
63 Switching fatigue of ferroelectric layered-perovskite thin films: temperature effect Yuan, G.L.
2005
118 1-3 p. 225-228
4 p.
artikel
64 The epitaxial ZrO2 on silicon as alternative gate dielectric: film growth, characterization and electronic structure calculations Wang, S.J.
2005
118 1-3 p. 122-126
5 p.
artikel
65 The etching properties of Al2O3 thin films in N2/Cl2/BCl3 and Ar/Cl2/BCl3 gas chemistry Koo, Seong-Mo
2005
118 1-3 p. 201-204
4 p.
artikel
66 UV pulsed laser deposition of magnetite thin films Paramês, M.L.
2005
118 1-3 p. 246-249
4 p.
artikel
67 Viscoplastic behaviour of perovskite type ferroelectrics Belov, A.Yu.
2005
118 1-3 p. 7-11
5 p.
artikel
68 Wafer level reliability and leakage current modeling of PZT capacitors Bouyssou, E.
2005
118 1-3 p. 28-33
6 p.
artikel
                             68 gevonden resultaten
 
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