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                             70 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Acknowledgments 1992
 11 1-4 p. viii-
1 p.
 artikel
2 A computational study into the origin of SiC polytypes Heine, V.
 1992
 11 1-4 p. 55-60
6 p.
 artikel
3 Applications exploiting the extreme properties of diamonds Seal, M.
 1992
 11 1-4 p. 167-171
5 p.
 artikel
4 Applications of SiC thin films in low temperature devices Borisenko, I.Yu.
 1992
 11 1-4 p. 117-119
3 p.
 artikel
5 Author index of volume 11 1992
 11 1-4 p. 373-374
2 p.
 artikel
6 Characterization of 3CSiC epilayers by pulsed electron spin resonance Okumura, H.
 1992
 11 1-4 p. 31-34
4 p.
 artikel
7 Characterization studies of low pressure chemical vapour deposition SICARB layers for wide band gap emitters Pickering, C.
 1992
 11 1-4 p. 131-137
7 p.
 artikel
8 Chemical vapor deposition of β-SiC on silicon-on-sapphire and silicon-on-insulator substrates Pazik, J.C.
 1992
 11 1-4 p. 125-129
5 p.
 artikel
9 Composition and structure of epitaxial β-SiC films grown by reactive magnetron sputtering on Si(100) substrates Wahab, Q.
 1992
 11 1-4 p. 61-66
6 p.
 artikel
10 Diamond and diamond simulants as studied by micro-Raman spectroscopy Huong, Pham V.
 1992
 11 1-4 p. 235-242
8 p.
 artikel
11 Diamond electronic devices—can they outperform silicon or GaAs? Collins, Alan T.
 1992
 11 1-4 p. 257-263
7 p.
 artikel
12 Diamond-like carbon films deposited in a dual microwave-radio-frequency plasma Küttel, O.M.
 1992
 11 1-4 p. 321-324
4 p.
 artikel
13 Diffusion of 13C and 29Si implanted ions in SiC Eveno, P.
 1992
 11 1-4 p. 331-336
6 p.
 artikel
14 Editorial Board 1992
 11 1-4 p. iii-
1 p.
 artikel
15 Effects of surface etching before metal contact formation on carbon/diamond-silicon heterojunction diode characteristics Chan, K.K.
 1992
 11 1-4 p. 295-298
4 p.
 artikel
16 Electron and nuclear structural characterization of natural, synthetic, homoepitaxial and polycrystalline low pressure chemically vapour-deposited diamond Maguire, H.G.
 1992
 11 1-4 p. 243-248
6 p.
 artikel
17 Electron channelling radiation: first steps towards a bright and tunable X-ray source Richter, Achim
 1992
 11 1-4 p. 139-147
9 p.
 artikel
18 Electronic properties of disordered SiC materials Chauvet, O.
 1992
 11 1-4 p. 303-306
4 p.
 artikel
19 Electronic structure of laser-synthesized SiC by photoelectron and soft X-ray spectroscopy Driss Khodja, M.
 1992
 11 1-4 p. 97-101
5 p.
 artikel
20 Electron paramagnetic resonance study of new centres in SiC Stallinga, P.
 1992
 11 1-4 p. 35-38
4 p.
 artikel
21 Electron spin resonance studies of transition metal deep level impurities in SiC Maier, K.
 1992
 11 1-4 p. 27-30
4 p.
 artikel
22 Epitaxial growth of diamond-like films on Si(100) by pulsed-laser evaporation of graphite Martin-Gago, J.A.
 1992
 11 1-4 p. 337-340
4 p.
 artikel
23 Epitaxially grown β-SiC on Si(100) and Si(111) substrates by low pressure chemical vapour deposition Just, Wolfgang
 1992
 11 1-4 p. 317-319
3 p.
 artikel
24 Fabrication of SiC epitaxial structures for devices by the method of sublimation in an open system Anikin, M.M.
 1992
 11 1-4 p. 113-115
3 p.
 artikel
25 Growth and properties of CVD-SiC layers using tetramethylsilane Figueras, A.
 1992
 11 1-4 p. 83-87
5 p.
 artikel
26 Growth of SiC on silicon in a low pressure vertical reactor Irvine, K.G.
 1992
 11 1-4 p. 93-96
4 p.
 artikel
27 Hard-photon emission and shower formation when multigigaelectronvolt electrons penetrate single crystals near axial directions: strong-field effects Uggerhøj, E.
 1992
 11 1-4 p. 159-166
8 p.
 artikel
28 High energy ion implantation into diamond and cubic boron nitride Zaitsev, Alexander M.
 1992
 11 1-4 p. 179-190
12 p.
 artikel
29 Influence of deposition parameters on the properties of SiC films Vlaskina, S.I.
 1992
 11 1-4 p. 67-68
2 p.
 artikel
30 Influence of silicon on the physical properties of diamond-like films Demichelis, F.
 1992
 11 1-4 p. 313-316
4 p.
 artikel
31 Influence of surface energy on the growth of 6H- and 4H-SiC polytypes by sublimation Stein, R.A.
 1992
 11 1-4 p. 69-71
3 p.
 artikel
32 Interdiffusion in amorphous Si/SiC multilayers Kolodzey, J.
 1992
 11 1-4 p. 43-46
4 p.
 artikel
33 Ion beam studies of the static and dynamic properties of dopants in diamond Derry, T.E.
 1992
 11 1-4 p. 249-256
8 p.
 artikel
34 Limits to diamond and diamond-like material properties produced under metastable conditions Kamo, Mutsukazu
 1992
 11 1-4 p. 191-196
6 p.
 artikel
35 Limits to quality and size of diamond and cubic boron nitride synthesized under high pressure, high temperature conditions Caveney, R.J.
 1992
 11 1-4 p. 197-205
9 p.
 artikel
36 Materials modification: doping of diamond by ion implantation Prins, Johan F.
 1992
 11 1-4 p. 219-226
8 p.
 artikel
37 Measurement of electro-optical properties of β-SiC on sapphire substrates and free-standing films Tang, X.
 1992
 11 1-4 p. 39-42
4 p.
 artikel
38 Megaelectronvolt ion irradiation effects in amorphous carbon: the roles of the CH and CC bonds Tombrello, T.A.
 1992
 11 1-4 p. 207-209
3 p.
 artikel
39 Metallurgical study of SiCNiCr plasma-sprayed coatings Alonso, F.
 1992
 11 1-4 p. 279-283
5 p.
 artikel
40 Nitrogen-containing defects in diamond: experimental data and molecular orbital linear-combination-of-atomic-orbitals Uljashin, A.G.
 1992
 11 1-4 p. 359-362
4 p.
 artikel
41 One-electron states induced by 3d transition metal impurities in diamond Alves, H.W.L.
 1992
 11 1-4 p. 285-288
4 p.
 artikel
42 On the fracture statistics of polycrystalline α-SiC at room and high temperature Charif, A.
 1992
 11 1-4 p. 299-302
4 p.
 artikel
43 Optical absorption coefficients in a-Si1 − x C x:H Öktu, Ö.
 1992
 11 1-4 p. 47-50
4 p.
 artikel
44 Optical bistability in II–VI compounds Klingshirn, C.
 1992
 11 1-4 p. 11-20
10 p.
 artikel
45 Optical studies of donors and acceptors in cubic SiC Freitas Jr., J.A.
 1992
 11 1-4 p. 21-25
5 p.
 artikel
46 Picosecond optical measurements of the properties of heavily carbon-implanted silicon Moss, Steven C.
 1992
 11 1-4 p. 369-372
4 p.
 artikel
47 Plasma-enhanced chemical vapour deposition of SiC layers using a liquid source Bielan, Sabine
 1992
 11 1-4 p. 289-293
5 p.
 artikel
48 Polycrystalline diamone for optical thin films Müller-Sebert, W.
 1992
 11 1-4 p. 173-178
6 p.
 artikel
49 Preface Gippius, A.A.
 1992
 11 1-4 p. v-
1 p.
 artikel
50 Preparation and optical properties of wide gap II–VI compounds Gebhardt, W.
 1992
 11 1-4 p. 1-9
9 p.
 artikel
51 Preparation of crystalline SiC thin films by plasma-enhanced chemical vapour deposition and by ion beam modification of silicon Derst, G.
 1992
 11 1-4 p. 79-82
4 p.
 artikel
52 Prospects for new applications of diamond produced by stable and metastable synthesis Jones, B.L.
 1992
 11 1-4 p. 149-157
9 p.
 artikel
53 p-Type semiconducting structures in diamond implanted with boron ions Denisenko, A.V.
 1992
 11 1-4 p. 273-277
5 p.
 artikel
54 Raman spectra and electrical conductivity of glassy carbon Soukup, L.
 1992
 11 1-4 p. 355-357
3 p.
 artikel
55 Scanning tunnelling microscopy studies of diamond-like films prepared by laser ablation Vazquez, L.
 1992
 11 1-4 p. 363-367
5 p.
 artikel
56 Short-range order in hydrogenated amorphous SiC alloys studied by extended X-ray absorption fine structure Pascarelli, S.
 1992
 11 1-4 p. 51-54
4 p.
 artikel
57 SiC and TaC as optical materials Harris, G.L.
 1992
 11 1-4 p. 89-91
3 p.
 artikel
58 SiC bipolar devices Chelnokov, V.E.
 1992
 11 1-4 p. 103-111
9 p.
 artikel
59 α-SiC buried-gate junction field effect transistors Kelner, G.
 1992
 11 1-4 p. 121-124
4 p.
 artikel
60 Sponsors 1992
 11 1-4 p. vii-
1 p.
 artikel
61 Stress modification and characterization of thin SiC films grown by plasma-enhanced chemical vapour deposition Schliwinski, H.-J.
 1992
 11 1-4 p. 73-77
5 p.
 artikel
62 Study of the growth mechanisms of amorphous carbon films by isotopic tracing methods Perrière, J.
 1992
 11 1-4 p. 347-351
5 p.
 artikel
63 Subject index of volume 11 1992
 11 1-4 p. 375-379
5 p.
 artikel
64 Temperature dependence of the electric field gradient parameters at 19F lattice sites in semiconducting and insulating diamonds Sideras-Haddad, E.
 1992
 11 1-4 p. 307-312
6 p.
 artikel
65 The 2.526 eV luminescence band in diamond Nazaré, M.H.
 1992
 11 1-4 p. 341-345
5 p.
 artikel
66 The fate of implanted 19F ions in diamond and their theoretical modelling Sellschop, J.P.F.
 1992
 11 1-4 p. 227-234
8 p.
 artikel
67 Theoretical status of diamond and its defects, excited states and atomic motion Stoneham, A.M.
 1992
 11 1-4 p. 211-218
8 p.
 artikel
68 Theory of native defects, doping and diffusion in diamond and silicon carbide Bernholc, J.
 1992
 11 1-4 p. 265-272
8 p.
 artikel
69 Thermal conductivity measurements of synthetic diamond films using the photothermal beam deflection technique Petrovsky, A.N.
 1992
 11 1-4 p. 353-354
2 p.
 artikel
70 Transmission electron microscopy studies of dislocation mechanisms in as-sintered α-SiC and after creep experiments at high temperature Lee, S.J.
 1992
 11 1-4 p. 325-330
6 p.
 artikel
                             70 gevonden resultaten
 
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