| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A newly observed high frequency effect on the ESD protection utilized in a gigahertz NMOS technology
|
Weston, H.T.
|
|
1993
|
31 |
2-3 |
p. 79-89
11 p.
|
artikel
|
| 2 |
An investigation of BiCMOS ESD protection circuit elements and applications in submicron technologies
|
Amerasekera, Ajith
|
|
1993
|
31 |
2-3 |
p. 145-160
16 p.
|
artikel
|
| 3 |
Annealing of ESD-induced damage in power MOSFETs
|
Zupac, D.
|
|
1993
|
31 |
2-3 |
p. 131-144
14 p.
|
artikel
|
| 4 |
A successful HBM ESD protection circuit for micron and sub-micron level CMOS
|
Carbajal III, Bernard G.
|
|
1993
|
31 |
2-3 |
p. 301-312
12 p.
|
artikel
|
| 5 |
Author index volume 31
|
|
|
1993
|
31 |
2-3 |
p. 359-360
2 p.
|
artikel
|
| 6 |
Calendar
|
|
|
1993
|
31 |
2-3 |
p. 357-
1 p.
|
artikel
|
| 7 |
Contents volume 31
|
|
|
1993
|
31 |
2-3 |
p. 361-362
2 p.
|
artikel
|
| 8 |
Electrical overstress (EOS) power profiles: A guideline to qualify EOS hardness of semiconductor devices
|
Díaz, Carlos
|
|
1993
|
31 |
2-3 |
p. 161-176
16 p.
|
artikel
|
| 9 |
ESD induced gate oxide damage during wafer fabrication process
|
Kim, Sang U.
|
|
1993
|
31 |
2-3 |
p. 323-337
15 p.
|
artikel
|
| 10 |
ESD protection in a 3.3 V sub-micron silicided CMOS technology
|
Krakauer, David
|
|
1993
|
31 |
2-3 |
p. 111-129
19 p.
|
artikel
|
| 11 |
Experimental study of unprotected MOS structures under EOS/ESD conditions
|
Greason, W.D.
|
|
1993
|
31 |
2-3 |
p. 281-300
20 p.
|
artikel
|
| 12 |
Fieldemitter-based ESD-protection circuits for high-frequency devices and IC's
|
Bock, K.
|
|
1993
|
31 |
2-3 |
p. 263-279
17 p.
|
artikel
|
| 13 |
From lightning to charged-device model electrostatic discharges
|
Lin, Don L.
|
|
1993
|
31 |
2-3 |
p. 199-213
15 p.
|
artikel
|
| 14 |
Integrated circuit metal in the charged device model: bootstrap heating, melt damage, and scaling laws
|
Maloney, Timothy J.
|
|
1993
|
31 |
2-3 |
p. 313-321
9 p.
|
artikel
|
| 15 |
Latent damage and parametric drift in electrostatically damaged MOS transistors
|
Tunnicliffe, M.J.
|
|
1993
|
31 |
2-3 |
p. 91-110
20 p.
|
artikel
|
| 16 |
On chip ESD protection using SCR pairs
|
Croft, Gregg D.
|
|
1993
|
31 |
2-3 |
p. 177-197
21 p.
|
artikel
|
| 17 |
Panel of referees
|
|
|
1993
|
31 |
2-3 |
p. 364-
1 p.
|
artikel
|
| 18 |
Preface
|
Greason, William D.
|
|
1993
|
31 |
2-3 |
p. i-
1 p.
|
artikel
|
| 19 |
Shallow trench isolation double-diobe electrostatic discharge circuit and interaction with DRAM output circuitry
|
Voldman, Steven H.
|
|
1993
|
31 |
2-3 |
p. 237-262
26 p.
|
artikel
|
| 20 |
Subject index volume 31
|
|
|
1993
|
31 |
2-3 |
p. 363-
1 p.
|
artikel
|
| 21 |
Submission of manuscripts by diskette
|
|
|
1993
|
31 |
2-3 |
p. 365-
1 p.
|
artikel
|
| 22 |
Techniques and methodologies for making system level ESD response measurements for troubleshooting or design verification
|
Smith, Douglas C.
|
|
1993
|
31 |
2-3 |
p. 215-235
21 p.
|
artikel
|
| 23 |
The resistive phase of an air discharge and the formation of fast risetime ESD pulses
|
Hyatt, Hugh M.
|
|
1993
|
31 |
2-3 |
p. 339-356
18 p.
|
artikel
|
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