Digital Library
Close Browse articles from a journal
 
Search for with title:
ABCDEFGHIJKLMNOPQRSTUVWXYZ

     Journal description
       All volumes of the corresponding journal
         All issues of the corresponding volume
                                       All articles of the corresponding issues
 
                             23 results found
no title author magazine year volume issue page(s) type
1 A newly observed high frequency effect on the ESD protection utilized in a gigahertz NMOS technology Weston, H.T.
 1993
 31 2-3 p. 79-89
11 p.
 article
2 An investigation of BiCMOS ESD protection circuit elements and applications in submicron technologies Amerasekera, Ajith
 1993
 31 2-3 p. 145-160
16 p.
 article
3 Annealing of ESD-induced damage in power MOSFETs Zupac, D.
 1993
 31 2-3 p. 131-144
14 p.
 article
4 A successful HBM ESD protection circuit for micron and sub-micron level CMOS Carbajal III, Bernard G.
 1993
 31 2-3 p. 301-312
12 p.
 article
5 Author index volume 31 1993
 31 2-3 p. 359-360
2 p.
 article
6 Calendar 1993
 31 2-3 p. 357-
1 p.
 article
7 Contents volume 31 1993
 31 2-3 p. 361-362
2 p.
 article
8 Electrical overstress (EOS) power profiles: A guideline to qualify EOS hardness of semiconductor devices Díaz, Carlos
 1993
 31 2-3 p. 161-176
16 p.
 article
9 ESD induced gate oxide damage during wafer fabrication process Kim, Sang U.
 1993
 31 2-3 p. 323-337
15 p.
 article
10 ESD protection in a 3.3 V sub-micron silicided CMOS technology Krakauer, David
 1993
 31 2-3 p. 111-129
19 p.
 article
11 Experimental study of unprotected MOS structures under EOS/ESD conditions Greason, W.D.
 1993
 31 2-3 p. 281-300
20 p.
 article
12 Fieldemitter-based ESD-protection circuits for high-frequency devices and IC's Bock, K.
 1993
 31 2-3 p. 263-279
17 p.
 article
13 From lightning to charged-device model electrostatic discharges Lin, Don L.
 1993
 31 2-3 p. 199-213
15 p.
 article
14 Integrated circuit metal in the charged device model: bootstrap heating, melt damage, and scaling laws Maloney, Timothy J.
 1993
 31 2-3 p. 313-321
9 p.
 article
15 Latent damage and parametric drift in electrostatically damaged MOS transistors Tunnicliffe, M.J.
 1993
 31 2-3 p. 91-110
20 p.
 article
16 On chip ESD protection using SCR pairs Croft, Gregg D.
 1993
 31 2-3 p. 177-197
21 p.
 article
17 Panel of referees 1993
 31 2-3 p. 364-
1 p.
 article
18 Preface Greason, William D.
 1993
 31 2-3 p. i-
1 p.
 article
19 Shallow trench isolation double-diobe electrostatic discharge circuit and interaction with DRAM output circuitry Voldman, Steven H.
 1993
 31 2-3 p. 237-262
26 p.
 article
20 Subject index volume 31 1993
 31 2-3 p. 363-
1 p.
 article
21 Submission of manuscripts by diskette 1993
 31 2-3 p. 365-
1 p.
 article
22 Techniques and methodologies for making system level ESD response measurements for troubleshooting or design verification Smith, Douglas C.
 1993
 31 2-3 p. 215-235
21 p.
 article
23 The resistive phase of an air discharge and the formation of fast risetime ESD pulses Hyatt, Hugh M.
 1993
 31 2-3 p. 339-356
18 p.
 article
                             23 results found
 
 Koninklijke Bibliotheek - National Library of the Netherlands