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                             36 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A new CMS pixel detector for the LHC luminosity upgrade Favaro, Carlotta
2011
658 1 p. 41-45
5 p.
artikel
2 Annealing studies on X-ray and neutron irradiated CMOS Monolithic Active Pixel Sensors Doering, D.
2011
658 1 p. 133-136
4 p.
artikel
3 Avalanche effect in Si heavily irradiated detectors: Physical model and perspectives for application Eremin, V.
2011
658 1 p. 145-151
7 p.
artikel
4 Bidimensional silicon dosimeter: Development and characterization Talamonti, C.
2011
658 1 p. 84-89
6 p.
artikel
5 Campaign to identify the future CMS tracker baseline Hoffmann, K.-H.
2011
658 1 p. 30-35
6 p.
artikel
6 Characterisation of SiC photo-detectors for solar UV radiation monitoring Borchi, E.
2011
658 1 p. 121-124
4 p.
artikel
7 Characterization and performance of silicon n-in-p pixel detectors for the ATLAS upgrades Weigell, P.
2011
658 1 p. 36-40
5 p.
artikel
8 Characterization of proton and neutron irradiated low resistivity p-on-n magnetic Czochralski ministrip sensors and diodes Pacifico, Nicola
2011
658 1 p. 55-60
6 p.
artikel
9 Continuous measurement of radiation damage of standard CMOS imagers Servoli, Leonello
2011
658 1 p. 137-140
4 p.
artikel
10 Current simulation of symmetric contacts on CdTe Ruzin, A.
2011
658 1 p. 118-120
3 p.
artikel
11 Development of planar detectors with active edge Povoli, M.
2011
658 1 p. 103-107
5 p.
artikel
12 Development of radiation hard edgeless detectors with current terminating structure on p-type silicon Verbitskaya, E.
2011
658 1 p. 108-117
10 p.
artikel
13 Editorial Bruzzi, Mara
2011
658 1 p. 1-
1 p.
artikel
14 Evolution of silicon sensors characteristics of the current CMS tracker Barth, C.
2011
658 1 p. 6-10
5 p.
artikel
15 First results in micromapping the sensitivity to SEE of an electronic device in a SOI technology at the LNL IEEM Mattiazzo, S.
2011
658 1 p. 125-128
4 p.
artikel
16 Heavy ion-induced SEEs on 130nm CMOS technology for LHC application—status and challenges Gabrielli, A.
2011
658 1 p. 129-132
4 p.
artikel
17 High efficiency readout circuits for large matrices of pixels Gabrielli, A.
2011
658 1 p. 141-144
4 p.
artikel
18 Inside front cover (Editorial Board) 2011
658 1 p. IFC-
1 p.
artikel
19 Limits on upgrade tracker layout from particle fluxes, signal-to-noise, and occupancy Sadrozinski, Hartmut F.-W.
2011
658 1 p. 20-24
5 p.
artikel
20 Monte Carlo evaluation of the Filtered Back Projection method for image reconstruction in proton computed tomography Cirrone, G.A.P.
2011
658 1 p. 78-83
6 p.
artikel
21 New BNL 3D-Trench electrode Si detectors for radiation hard detectors for sLHC and for X-ray applications Li, Zheng
2011
658 1 p. 90-97
8 p.
artikel
22 Operation and performance of the CMS silicon tracking detector Assunta Borgia, Maria
2011
658 1 p. 2-5
4 p.
artikel
23 Organizing committee 2011
658 1 p. vi-
1 p.
artikel
24 Participants 2011
658 1 p. viii-
1 p.
artikel
25 PRIMA: An apparatus for medical application Sipala, V.
2011
658 1 p. 73-77
5 p.
artikel
26 Punch-through protection of SSDs in beam accidents Sadrozinski, H.F.-W.
2011
658 1 p. 46-50
5 p.
artikel
27 Radiation hardness studies of n+-in-n planar pixel sensors for the ATLAS upgrades Altenheiner, S.
2011
658 1 p. 25-29
5 p.
artikel
28 Scientific committee 2011
658 1 p. v-
1 p.
artikel
29 Scientific Secretary and Technical Assistance 2011
658 1 p. vii-
1 p.
artikel
30 Silicon detectors for the sLHC Affolder, A.
2011
658 1 p. 11-16
6 p.
artikel
31 Simulation and characterization of different setups for gamma ray detection using SiPMs and LYSO scintillators Benetti, M.
2011
658 1 p. 61-65
5 p.
artikel
32 Simulation of displacement damage for silicon avalanche photo-diodes Kılıç, Adnan
2011
658 1 p. 70-72
3 p.
artikel
33 Simulation of new p-type strip detectors with trench to enhance the charge multiplication effect in the n-type electrodes Fernández-Martínez, P.
2011
658 1 p. 98-102
5 p.
artikel
34 Simulation studies of the n+n− Si sensors having p-spray/p-stop implant for the SiD experiment Saxena, Pooja
2011
658 1 p. 66-69
4 p.
artikel
35 Test beam results of Current Injected Detectors (CID) irradiated up to 5×1015 1MeV neq/cm2 Härkönen, J.
2011
658 1 p. 51-54
4 p.
artikel
36 Update of the annealing scenario for irradiated silicon p-in-n microstrip sensors Dervan, P.J.
2011
658 1 p. 17-19
3 p.
artikel
                             36 gevonden resultaten
 
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