| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of trap spectra in LEC and epitaxial GaAs
|
Vaitkus, J.
|
|
1999
|
434 |
1 |
p. 61-66
6 p.
|
artikel
|
| 2 |
A transient conductance technique for characterisation of deep-level defects in highly irradiated detector-grade silicon
|
Alexiev, D
|
|
1999
|
434 |
1 |
p. 103-113
11 p.
|
artikel
|
| 3 |
CdTe and CdZnTe crystals for room temperature gamma-ray detectors
|
Franc, J
|
|
1999
|
434 |
1 |
p. 146-151
6 p.
|
artikel
|
| 4 |
Characterisation of vapour phase grown CdTe and (Cd,Zn)Te for detector applications
|
Fiederle, M
|
|
1999
|
434 |
1 |
p. 152-157
6 p.
|
artikel
|
| 5 |
Charge collection efficiency of GaAs detectors studied with low-energy heavy charged particles
|
Bates, R
|
|
1999
|
434 |
1 |
p. 34-37
4 p.
|
artikel
|
| 6 |
Charge transport in non-irradiated and irradiated silicon detectors
|
Leroy, C.
|
|
1999
|
434 |
1 |
p. 90-102
13 p.
|
artikel
|
| 7 |
Conference
|
|
|
1999
|
434 |
1 |
p. X-XII
nvt p.
|
artikel
|
| 8 |
Cryogenic temperature performance of heavily irradiated silicon detectors
|
da Via, C
|
|
1999
|
434 |
1 |
p. 114-117
4 p.
|
artikel
|
| 9 |
Development of low-pressure vapour-phase epitaxial GaAs for medical imaging
|
Bates, R.L
|
|
1999
|
434 |
1 |
p. 1-13
13 p.
|
artikel
|
| 10 |
Electric-field-induced ionization of acceptors in p-GaAs
|
Dargys, A
|
|
1999
|
434 |
1 |
p. 71-74
4 p.
|
artikel
|
| 11 |
Evaluation of 320×240 pixel LEC GaAs Schottky barrier X-ray imaging arrays, hybridized to CMOS readout circuit based on charge integration
|
Irsigler, R
|
|
1999
|
434 |
1 |
p. 24-29
6 p.
|
artikel
|
| 12 |
Formation of a quasi-neutral region in Schottky diodes based on semi-insulating GaAs and the influence of the compensation mechanism on the particle detector performance
|
Rogalla, M
|
|
1999
|
434 |
1 |
p. 44-56
13 p.
|
artikel
|
| 13 |
GaAs detector optimization for different medical imaging applications
|
Amendolia, S.R
|
|
1999
|
434 |
1 |
p. 14-17
4 p.
|
artikel
|
| 14 |
Index
|
|
|
1999
|
434 |
1 |
p. 173-178
6 p.
|
artikel
|
| 15 |
Modelling of the small pixel effect in gallium arsenide X-ray imaging detectors
|
Sellin, P.J
|
|
1999
|
434 |
1 |
p. 75-81
7 p.
|
artikel
|
| 16 |
Monte Carlo simulator of the charge signal induced by external radiation on semi-insulating GaAs detectors
|
Cola, Adriano
|
|
1999
|
434 |
1 |
p. 67-70
4 p.
|
artikel
|
| 17 |
New sensors for dental X-ray imaging
|
Fröjdh, C
|
|
1999
|
434 |
1 |
p. 18-23
6 p.
|
artikel
|
| 18 |
Preparation and properties of thick not intentionally doped GaInP(As)/GaAs layers
|
Nohavica, D
|
|
1999
|
434 |
1 |
p. 164-168
5 p.
|
artikel
|
| 19 |
Radiation hardening of silicon detectors
|
Lemeilleur, F
|
|
1999
|
434 |
1 |
p. 82-89
8 p.
|
artikel
|
| 20 |
Review of the development of diamond radiation sensors
|
Adam, W
|
|
1999
|
434 |
1 |
p. 131-145
15 p.
|
artikel
|
| 21 |
Scanning of irradiated silicon detectors using alpha particles and low-energy protons
|
Casse, G
|
|
1999
|
434 |
1 |
p. 118-130
13 p.
|
artikel
|
| 22 |
Semi-insulating GaAs-based Schottky contacts in the role of detectors of ionising radiation: An effect of the interface treatment
|
Ivančo, J
|
|
1999
|
434 |
1 |
p. 158-163
6 p.
|
artikel
|
| 23 |
The AlGaAs light emitting particle detector
|
Požela, J
|
|
1999
|
434 |
1 |
p. 169-172
4 p.
|
artikel
|
| 24 |
The role of space charge in GaAs-based particle detectors
|
Mareš, J.J
|
|
1999
|
434 |
1 |
p. 57-60
4 p.
|
artikel
|
| 25 |
X-ray detection with GaAs RGCCDs
|
Passmore, S
|
|
1999
|
434 |
1 |
p. 30-33
4 p.
|
artikel
|
| 26 |
X-ray imaging with photon counting hybrid semiconductor pixel detectors
|
Manolopoulos, S
|
|
1999
|
434 |
1 |
p. 38-43
6 p.
|
artikel
|
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