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                                       Details for article 2 of 26 found articles
 
 
  A transient conductance technique for characterisation of deep-level defects in highly irradiated detector-grade silicon
 
 
Title: A transient conductance technique for characterisation of deep-level defects in highly irradiated detector-grade silicon
Author: Alexiev, D
Reinhard, M.I
Mo, L
Rosenfeld, A
Appeared in: Nuclear instruments and methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment
Paging: Volume 434 (1999) nr. 1 pages 11 p.
Year: 1999
Contents:
Publisher: Elsevier Science B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 2 of 26 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands