| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A CCD-based vertex detector for SLD
|
Damerell, C.J.S.
|
|
1990
|
288 |
1 |
p. 236-239
4 p.
|
artikel
|
| 2 |
A CMOS readout system for very large detector capacitances
|
Schoeneberg, U.
|
|
1990
|
288 |
1 |
p. 191-196
6 p.
|
artikel
|
| 3 |
A modular amplifier system for the readout of silicon strip detectors
|
Thomas, S.L.
|
|
1990
|
288 |
1 |
p. 212-218
7 p.
|
artikel
|
| 4 |
A monolithic charge multiplexer with 0.5% accuracy
|
Lewis, J.
|
|
1990
|
288 |
1 |
p. 197-208
12 p.
|
artikel
|
| 5 |
Amplex, a low-noise, low-power analog CMOS signal processor for multi-element silicon particle detectors
|
Beuville, Eric
|
|
1990
|
288 |
1 |
p. 157-167
11 p.
|
artikel
|
| 6 |
An alignment method for the mark II silicon strip vertex detector using an X-ray beam
|
Adolphsen, Chris
|
|
1990
|
288 |
1 |
p. 257-264
8 p.
|
artikel
|
| 7 |
An experimental 10 MHz low power CMOS analog front-end for pixel detectors
|
Krummenacher, F.
|
|
1990
|
288 |
1 |
p. 176-179
4 p.
|
artikel
|
| 8 |
Applications of charge coupled devices to X-ray astrophysics missions
|
Lumb, David H.
|
|
1990
|
288 |
1 |
p. 219-226
8 p.
|
artikel
|
| 9 |
A room-temperature CCD imaging system for the detection of beta-emitting tracers
|
Ellilä, Markku
|
|
1990
|
288 |
1 |
p. 267-271
5 p.
|
artikel
|
| 10 |
A silicon strip detector for β-radiochromatography
|
Schooneveld, E.M.
|
|
1990
|
288 |
1 |
p. 250-253
4 p.
|
artikel
|
| 11 |
Basic parameters of the UCD microvertex detector
|
Golovatjuk, V.M.
|
|
1990
|
288 |
1 |
p. 254-256
3 p.
|
artikel
|
| 12 |
Canberra semiconductor, an industrial partner for physics research
|
Verplancke, J.
|
|
1990
|
288 |
1 |
p. 287-289
3 p.
|
artikel
|
| 13 |
Committees
|
|
|
1990
|
288 |
1 |
p. viii-
1 p.
|
artikel
|
| 14 |
Demands of future high energy physics experiments
|
Turala, M.
|
|
1990
|
288 |
1 |
p. 290-292
3 p.
|
artikel
|
| 15 |
Development of a silicon strip detector array for nuclear structure physics
|
Davinson, T.
|
|
1990
|
288 |
1 |
p. 245-249
5 p.
|
artikel
|
| 16 |
Editorial
|
Longoni, A.
|
|
1990
|
288 |
1 |
p. vii-
1 p.
|
artikel
|
| 17 |
Editorial Board
|
|
|
1990
|
288 |
1 |
p. ii-
1 p.
|
artikel
|
| 18 |
Evolution in the criteria that underlie the design of a monolithic preamplifier system for microstrip detectors
|
Buttler, W.
|
|
1990
|
288 |
1 |
p. 140-149
10 p.
|
artikel
|
| 19 |
Experimental confirmation of a new semiconductor detector principle
|
Kemmer, J.
|
|
1990
|
288 |
1 |
p. 92-98
7 p.
|
artikel
|
| 20 |
Feedback charge amplifier integrated on the detector wafer
|
Rehak, P.
|
|
1990
|
288 |
1 |
p. 168-175
8 p.
|
artikel
|
| 21 |
Generation lifetime monitoring on high resistivity silicon using gated diodes
|
Vanstraelen, G.
|
|
1990
|
288 |
1 |
p. 48-53
6 p.
|
artikel
|
| 22 |
High resistivity silicon for detector applications
|
Dreier, P.
|
|
1990
|
288 |
1 |
p. 272-277
6 p.
|
artikel
|
| 23 |
High-speed analog CMOS pipeline system
|
Möschen, J.
|
|
1990
|
288 |
1 |
p. 180-186
7 p.
|
artikel
|
| 24 |
Improvements in low frequency noise of MOSFETS for front end amplifiers
|
Kandiah, K.
|
|
1990
|
288 |
1 |
p. 150-156
7 p.
|
artikel
|
| 25 |
Instability of the behaviour of high resistivity silicon detectors due to the presence of oxide charges
|
Longoni, A.
|
|
1990
|
288 |
1 |
p. 35-43
9 p.
|
artikel
|
| 26 |
Integrating transistors on high-ohmic silicon
|
Wouters, S.E.
|
|
1990
|
288 |
1 |
p. 44-47
4 p.
|
artikel
|
| 27 |
Intertechnique capabilities in detector fabrication
|
Henck, Roland
|
|
1990
|
288 |
1 |
p. 278-281
4 p.
|
artikel
|
| 28 |
Ion-implanted Si pn-junction detectors with ultrathin windows
|
Maisch, T.
|
|
1990
|
288 |
1 |
p. 19-23
5 p.
|
artikel
|
| 29 |
Large area silicon avalanche photodiodes for scintillation detectors
|
Farrell, R.
|
|
1990
|
288 |
1 |
p. 137-139
3 p.
|
artikel
|
| 30 |
List of participants
|
|
|
1990
|
288 |
1 |
p. ix-xi
nvt p.
|
artikel
|
| 31 |
Measurements of degradation of silicon detectors and electronics in various radiation environments
|
Beuville, Eric
|
|
1990
|
288 |
1 |
p. 68-75
8 p.
|
artikel
|
| 32 |
Noise filtering for readout electronics
|
Buttler, W.
|
|
1990
|
288 |
1 |
p. 187-190
4 p.
|
artikel
|
| 33 |
Overview of radiation hardening for semiconductor detectors
|
Dawes Jr., William R.
|
|
1990
|
288 |
1 |
p. 54-61
8 p.
|
artikel
|
| 34 |
Phonon-mediated detection of X-rays in silicon crystals using superconducting transition edge phonon sensors
|
Young, B.A.
|
|
1990
|
288 |
1 |
p. 119-124
6 p.
|
artikel
|
| 35 |
Photomask technique for fabricating high purity germanium strip detectors
|
Gutknecht, D.
|
|
1990
|
288 |
1 |
p. 13-18
6 p.
|
artikel
|
| 36 |
Photovoltaic lead-chalcogenide IR-sensor arrays on Si for thermal imaging applications
|
Masek, J.
|
|
1990
|
288 |
1 |
p. 104-109
6 p.
|
artikel
|
| 37 |
Position sensitive detection of nuclear radiation mediated by non equilibrium phonons at low temperatures
|
Pröbst, F.
|
|
1990
|
288 |
1 |
p. 125-130
6 p.
|
artikel
|
| 38 |
Present and future developments of Si detectors at MBB
|
Kemmer, J.
|
|
1990
|
288 |
1 |
p. 282-286
5 p.
|
artikel
|
| 39 |
Proposal for a uranium-silicon precision calorimeter for the UNK 6 TeV hadron collider
|
Bashindzhagyan, G.L.
|
|
1990
|
288 |
1 |
p. 265-266
2 p.
|
artikel
|
| 40 |
20 ps (FWHM) GaAs photodiodes with transparent indium tin oxide Schottky gates
|
Mittelholzer, M.
|
|
1990
|
288 |
1 |
p. 110-113
4 p.
|
artikel
|
| 41 |
Realization of a staircase photodiode: Towards a solid-state photomultiplier
|
Ripamonti, G.
|
|
1990
|
288 |
1 |
p. 99-103
5 p.
|
artikel
|
| 42 |
Results on a 10 micron pitch detector with individual strip readout
|
Antinori, F.
|
|
1990
|
288 |
1 |
p. 82-86
5 p.
|
artikel
|
| 43 |
Semiconductor photodiodes in the VUV: Determination of layer thicknesses and design criteria for improved devices
|
Krumrey, M.
|
|
1990
|
288 |
1 |
p. 114-118
5 p.
|
artikel
|
| 44 |
Silicon detector developments for calorimetry: Technology and radiation damage
|
Fretwurst, E.
|
|
1990
|
288 |
1 |
p. 1-12
12 p.
|
artikel
|
| 45 |
Silicon drift photodiodes
|
Avset, B.S.
|
|
1990
|
288 |
1 |
p. 131-136
6 p.
|
artikel
|
| 46 |
Silicon microstrip detector radiation damage by 1.5 MeV electrons and synchrotron radiation
|
Chilingarov, A.G.
|
|
1990
|
288 |
1 |
p. 62-67
6 p.
|
artikel
|
| 47 |
Simulation of charge transport in semiconductor radiation detectors
|
Lund, J.C.
|
|
1990
|
288 |
1 |
p. 31-34
4 p.
|
artikel
|
| 48 |
Stabilization of HgI2 X-ray detectors
|
Squillante, M.R.
|
|
1990
|
288 |
1 |
p. 79-81
3 p.
|
artikel
|
| 49 |
Successful operation of a new Si-PAD detector with ASIC readout at the CERN pp-collider
|
Ansari, R.
|
|
1990
|
288 |
1 |
p. 240-244
5 p.
|
artikel
|
| 50 |
Test of radiation hardness of CMOS transistors under neutron irradiation
|
Sadrozinski, H.F.-W.
|
|
1990
|
288 |
1 |
p. 76-78
3 p.
|
artikel
|
| 51 |
The bipolar silicon microstrip detector: A proposal for a novel precision tracking device
|
Horisberger, R.
|
|
1990
|
288 |
1 |
p. 87-91
5 p.
|
artikel
|
| 52 |
The MPI/AIT X-ray imager (MAXI) — High speed pn CCDs for X-ray detection
|
Strüder, L.
|
|
1990
|
288 |
1 |
p. 227-235
9 p.
|
artikel
|
| 53 |
The time slice system
|
DeWitt, Joel
|
|
1990
|
288 |
1 |
p. 209-211
3 p.
|
artikel
|
| 54 |
Thin epitaxial silicon detectors
|
Stab, Lucien
|
|
1990
|
288 |
1 |
p. 24-30
7 p.
|
artikel
|
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