| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An investigation of the role of the time averaged ion beam current density upon the defect densities in thin film SIMOX
|
Nejim, A.
|
|
1994
|
84 |
2 |
p. 248-253
6 p.
|
artikel
|
| 2 |
Carrier generation in thin SIMOX films by deep-depletion pulsing of MOS transistors
|
Ionescu, A.
|
|
1994
|
84 |
2 |
p. 265-269
5 p.
|
artikel
|
| 3 |
Chemical and thermodynamic influences in ion beam assisted thin film synthesis
|
Ensinger, W.
|
|
1994
|
84 |
2 |
p. 181-185
5 p.
|
artikel
|
| 4 |
Copper clusters made by implantation in aluminium nitride
|
Traverse, A.
|
|
1994
|
84 |
2 |
p. 204-207
4 p.
|
artikel
|
| 5 |
Crystallographic defect studies in SIMOX material thinned by sacrificial oxidation
|
Giles, L.F.
|
|
1994
|
84 |
2 |
p. 242-247
6 p.
|
artikel
|
| 6 |
Dopants diffusion in a thin film SIMOX structure and its computer simulation
|
Zuoyu, Shi
|
|
1994
|
84 |
2 |
p. 238-241
4 p.
|
artikel
|
| 7 |
Effects of annealing on doped and undoped ion beam synthesised CoSi2 structures
|
Reeson, K.J.
|
|
1994
|
84 |
2 |
p. 139-142
4 p.
|
artikel
|
| 8 |
Electrical and optical properties of β-FeSi2 after Co implantation and annealing
|
Panknin, D.
|
|
1994
|
84 |
2 |
p. 172-175
4 p.
|
artikel
|
| 9 |
Electrical and structural characteristics of thin buried oxides
|
Meda, L.
|
|
1994
|
84 |
2 |
p. 270-274
5 p.
|
artikel
|
| 10 |
Formation and stability of continuous buried SiO2 layers in SIMOX
|
Cerofolini, G.F.
|
|
1994
|
84 |
2 |
p. 234-237
4 p.
|
artikel
|
| 11 |
Formation of aluminium nitride and segregation of Cu impurity atoms in aluminium implanted by high dose nitrogen ions
|
Chenglu, Lin
|
|
1994
|
84 |
2 |
p. 208-213
6 p.
|
artikel
|
| 12 |
Formation of unstrained Si1−x Ge x. layers by high-dose 74Ge ion implantation in SIMOX
|
Holländer, B.
|
|
1994
|
84 |
2 |
p. 218-221
4 p.
|
artikel
|
| 13 |
Identification of EOR defects due to the regrowth of amorphous layers created by ion bombardment
|
de Mauduit, B.
|
|
1994
|
84 |
2 |
p. 190-194
5 p.
|
artikel
|
| 14 |
In situ study of in-beam cobalt suicide growth in silicon
|
Ruault, M.-O.
|
|
1994
|
84 |
2 |
p. 135-138
4 p.
|
artikel
|
| 15 |
Ion-beam induced CoSi2 layers: formation and contact properties
|
Dehm, C.
|
|
1994
|
84 |
2 |
p. 148-152
5 p.
|
artikel
|
| 16 |
Ion implantation induced modification of a-SiC : H
|
Tzenov, N.
|
|
1994
|
84 |
2 |
p. 195-198
4 p.
|
artikel
|
| 17 |
Irradiation experiments on high temperature superconductor thin films
|
Kroener, T.
|
|
1994
|
84 |
2 |
p. 186-189
4 p.
|
artikel
|
| 18 |
Materials aspects of ion beam synthesis of epitaxial suicides
|
Mantl, S.
|
|
1994
|
84 |
2 |
p. 127-134
8 p.
|
artikel
|
| 19 |
MeV metal ion implantations for buried layer fabrication in silicon
|
Lindner, Jörg K.N.
|
|
1994
|
84 |
2 |
p. 153-162
10 p.
|
artikel
|
| 20 |
Nondestructive characterization of SIMOX structures
|
Geatches, R.M.
|
|
1994
|
84 |
2 |
p. 258-264
7 p.
|
artikel
|
| 21 |
Optical and electrical properties of buried semiconducting ß-FeSL
|
Radermacher, K.
|
|
1994
|
84 |
2 |
p. 163-167
5 p.
|
artikel
|
| 22 |
Optical characterisation of SIMOX structures formed by successive implantation and annealing
|
Pérez-Rodriguez, A.
|
|
1994
|
84 |
2 |
p. 275-280
6 p.
|
artikel
|
| 23 |
Optical properties and phase transformations in α and β iron disilicide layers
|
Hunt, T.D.
|
|
1994
|
84 |
2 |
p. 168-171
4 p.
|
artikel
|
| 24 |
18O studies of altered layers formed in Si and SiO2 by ion bombardment
|
Kilner, J.A.
|
|
1994
|
84 |
2 |
p. 176-180
5 p.
|
artikel
|
| 25 |
Ostwald ripening during ion beam synthesis — a computer simulation for inhomogeneous systems
|
Reiss, S.
|
|
1994
|
84 |
2 |
p. 229-233
5 p.
|
artikel
|
| 26 |
Oxide modification due to high temperature processing of Si/SiO2/Si structures
|
Devine, R.A.B.
|
|
1994
|
84 |
2 |
p. 254-257
4 p.
|
artikel
|
| 27 |
Phase transformations and compound formation during ion irradiation of materials
|
Williams, J.S.
|
|
1994
|
84 |
2 |
p. 199-203
5 p.
|
artikel
|
| 28 |
Phosphorus redistribution during the formation of buried CoSi2 layers by ion beam synthesis
|
Schüppen, A.
|
|
1994
|
84 |
2 |
p. 143-147
5 p.
|
artikel
|
| 29 |
Precipitation studies in oxygen- and nitrogen-rich silicon formed by high dose implantation
|
Weber, R.
|
|
1994
|
84 |
2 |
p. 286-290
5 p.
|
artikel
|
| 30 |
Preface
|
Kilner, J.A.
|
|
1994
|
84 |
2 |
p. ix-
1 p.
|
artikel
|
| 31 |
Regrowth behaviour of Si1−x Ge x/Si structures formed by Ge+ ion implantation and post amorphisation
|
Zhang, J.P.
|
|
1994
|
84 |
2 |
p. 222-228
7 p.
|
artikel
|
| 32 |
Structural analysis of buried AlN thin films formed by nitrogen implantation into microelectronics grade aluminium
|
Calvo, L.
|
|
1994
|
84 |
2 |
p. 214-217
4 p.
|
artikel
|
| 33 |
Study of refractive index profiles of ion-implanted silicon-on-insulator material
|
Swart, P.L.
|
|
1994
|
84 |
2 |
p. 281-285
5 p.
|
artikel
|
| 34 |
Supporting organisations and sponsors
|
|
|
1994
|
84 |
2 |
p. x-
1 p.
|
artikel
|
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