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                             74 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Acoustic emission initiated by penetrating ions Adlien≐, D.
 1985
 6 1-2 p. 435-438
4 p.
 artikel
2 A high current ion implanter machine Matsuda, K.
 1985
 6 1-2 p. 35-38
4 p.
 artikel
3 A high-energy, high-current ion implantation system Rose, Peter H.
 1985
 6 1-2 p. 27-34
8 p.
 artikel
4 A high throughput metal ion implanter end station Armini, A.J.
 1985
 6 1-2 p. 214-218
5 p.
 artikel
5 A history of commercial implantation Rose, Peter H.
 1985
 6 1-2 p. 1-8
8 p.
 artikel
6 Air-enhanced contact cooling of wafers Sieradzki, Manny
 1985
 6 1-2 p. 237-242
6 p.
 artikel
7 A new machine for film formation by ion and vapour deposition Andoh, Y.
 1985
 6 1-2 p. 111-115
5 p.
 artikel
8 A new 2 MV single-ended ion accelerator for ion implantation Cleff, B.
 1985
 6 1-2 p. 46-50
5 p.
 artikel
9 An ion source with plasma generator Yabe, E.
 1985
 6 1-2 p. 119-122
4 p.
 artikel
10 A non-mass-analyzed solar cell ion implanter Armini, A.J.
 1985
 6 1-2 p. 94-99
6 p.
 artikel
11 A reactive ion beam etching and coating system Zhang, Yuchun
 1985
 6 1-2 p. 447-451
5 p.
 artikel
12 Argon ion implantation gettering of large area p-n junctions and schottky diodes Lacquet, B.M.
 1985
 6 1-2 p. 372-375
4 p.
 artikel
13 A technique for optimizing the dose uniformity of a magnetic scanning high current implanter Ehrlich, Charles
 1985
 6 1-2 p. 228-236
9 p.
 artikel
14 Automatic cassette to cassette radiant impulse processor Sheets, Ronald E.
 1985
 6 1-2 p. 219-223
5 p.
 artikel
15 A versatile target chamber in an ion implanter for metallurgical research Lazzari, G.
 1985
 6 1-2 p. 210-213
4 p.
 artikel
16 Characteristics of a liquid metal ion source Zhou, F.
 1985
 6 1-2 p. 143-145
3 p.
 artikel
17 Computer automation of high current ion implanters Woodard, Ollie
 1985
 6 1-2 p. 146-153
8 p.
 artikel
18 Computor control of maskless ion implanter with AuSiBe LM ion source for III–V compound semiconductors Miyauchi, Eizo
 1985
 6 1-2 p. 183-189
7 p.
 artikel
19 Concept, operation and performance of the veeco VHC-120 high current ion implanter Scaife, William
 1985
 6 1-2 p. 39-45
7 p.
 artikel
20 Current status of ion implantation equipment and techniques for semiconductor IC fabrication Current, Michael I.
 1985
 6 1-2 p. 9-15
7 p.
 artikel
21 CV Uniformity measurements Deming, R.O.
 1985
 6 1-2 p. 349-356
8 p.
 artikel
22 Design considerations of MeV implanters Rathmell, Robert D.
 1985
 6 1-2 p. 56-62
7 p.
 artikel
23 Diagnostics in industrial equipment Delforge, A.
 1985
 6 1-2 p. 155-159
5 p.
 artikel
24 Editorial Board 1985
 6 1-2 p. ii-
1 p.
 artikel
25 Effect of resist patterning on gate oxide integrity in source/drain implant Tong, Rebecca
 1985
 6 1-2 p. 376-381
6 p.
 artikel
26 Electron beam annealing for phosphorous and arsenic implantation Zheng, Lirong
 1985
 6 1-2 p. 321-324
4 p.
 artikel
27 Extraction of information on a continuous ion beam from beam-induced shot noise Szajnowski, W.J.
 1985
 6 1-2 p. 176-182
7 p.
 artikel
28 Film deposition and buried layer formation by mass-analyzed ion beams Yamada, I.
 1985
 6 1-2 p. 439-446
8 p.
 artikel
29 Formation of distant recombination centers in silicon by ion implantation Giedrys, T.
 1985
 6 1-2 p. 427-429
3 p.
 artikel
30 High conductivity, shallow doping in silicon by ion implantation and furnace annealing Wu, S.
 1985
 6 1-2 p. 330-335
6 p.
 artikel
31 High energy ion implantation Ziegler, J.F.
 1985
 6 1-2 p. 270-282
13 p.
 artikel
32 High energy ion implantation for C-MOS isolation n-wells technology: Problems related to the use of multicharged phosphorous ions in an industrial context Spinelli, P.
 1985
 6 1-2 p. 283-286
4 p.
 artikel
33 Hydrogen analysis as a function of depth for hydrogenous films and polymers by proton recoil detection Ingram, D.C.
 1985
 6 1-2 p. 430-434
5 p.
 artikel
34 Implementation of an automatic setup for ion beam implanters Splinter, P.
 1985
 6 1-2 p. 160-169
10 p.
 artikel
35 Improved facilities for ion beam surface analysis at the University of Surrey Mynard, J.E.
 1985
 6 1-2 p. 264-269
6 p.
 artikel
36 Instrumentation for neutralization of wafer charging Cheng, J.C.
 1985
 6 1-2 p. 243-249
7 p.
 artikel
37 International committee 1985
 6 1-2 p. ix-
1 p.
 artikel
38 Ion beam system for implanting industrial products of various shapes Denholm, A.S.
 1985
 6 1-2 p. 88-93
6 p.
 artikel
39 Ion implantation electron flooding requirements from a user's perspective Bakeman Jr, Paul E.
 1985
 6 1-2 p. 399-404
6 p.
 artikel
40 Ion implant round robin Current, M.I.
 1985
 6 1-2 p. 418-426
9 p.
 artikel
41 Liquid metal ion sources for FIB microfabrication systems — recent advances Prewett, P.D.
 1985
 6 1-2 p. 135-142
8 p.
 artikel
42 Manufacturing technology program to develop a production ion implantation facility for processing bearings and tools Smidt, F.A.
 1985
 6 1-2 p. 70-77
8 p.
 artikel
43 MeV Si implantation in GaAs Thompson, Phillip E.
 1985
 6 1-2 p. 287-291
5 p.
 artikel
44 Multiple-beam ion implantation setup for large scale treatment of semiconductors Muller, J.C.
 1985
 6 1-2 p. 394-398
5 p.
 artikel
45 1 MV rotating-disc type high voltage generator for application to an implanter Isoya, A.
 1985
 6 1-2 p. 250-257
8 p.
 artikel
46 Optical reflectometry of radiation damage in ion-implanted silicon Swart, P.L.
 1985
 6 1-2 p. 365-371
7 p.
 artikel
47 Oxygen implanter for simox Guerra, M.
 1985
 6 1-2 p. 63-69
7 p.
 artikel
48 Particle generation in medium current implanters Weisenberger, Wesley H.
 1985
 6 1-2 p. 190-195
6 p.
 artikel
49 Particles and particle transport in ion implanters Douglas-Hamilton, D.H.
 1985
 6 1-2 p. 196-201
6 p.
 artikel
50 Particulate performance of a wafer handler for serial process ion implantation Pollock, J.
 1985
 6 1-2 p. 202-209
8 p.
 artikel
51 Performance characteristics of the extrion 160-10 ion implantation system Liebert, Reuel
 1985
 6 1-2 p. 16-26
11 p.
 artikel
52 Planar channeling effects in Si(100) Current, Michael I.
 1985
 6 1-2 p. 336-348
13 p.
 artikel
53 Preface Brown, Bob
 1985
 6 1-2 p. vii-viii
nvt p.
 artikel
54 Progress report on the 400 keV research implanter at the University of Surrey Mynard, J.E.
 1985
 6 1-2 p. 100-105
6 p.
 artikel
55 Rapid annealing using the water-wall arc lamp Gelpey, Jeffrey C.
 1985
 6 1-2 p. 316-320
5 p.
 artikel
56 Rapid thermal processing — where has it been? Where is it going? Russo, Carl
 1985
 6 1-2 p. 298-306
9 p.
 artikel
57 Repetitively pulsed metal ion beams for ion implantation Adler, R.J.
 1985
 6 1-2 p. 123-128
6 p.
 artikel
58 RIKEN 200 KV high current implanter for metal surface modification Iwaki, Masaya
 1985
 6 1-2 p. 51-55
5 p.
 artikel
59 Sb implantation for bipolar buried layers using SbF5 in a cold-cathode implantation system Oleszek, G.M.
 1985
 6 1-2 p. 389-393
5 p.
 artikel
60 SECS communication for ion implanters Parisi, N.
 1985
 6 1-2 p. 170-175
6 p.
 artikel
61 Sheet resistivity of silicon wafers implanted with a high current machine Steeples, K.
 1985
 6 1-2 p. 412-417
6 p.
 artikel
62 Silicon on insulator structures formed by the implantation of high doses of reactive ions Hemment, P.L.F.
 1985
 6 1-2 p. 292-297
6 p.
 artikel
63 Simple hollow cathode ion source Tonegawa, A.
 1985
 6 1-2 p. 129-132
4 p.
 artikel
64 Some practical aspects of ion implantation for wear reduction Wittkower, A.
 1985
 6 1-2 p. 78-87
10 p.
 artikel
65 Source for doubly charged ions Le Roux, H.F.
 1985
 6 1-2 p. 133-134
2 p.
 artikel
66 The Narodny ion accelerator as an injector for a small cyclotron Derenchuk, V.
 1985
 6 1-2 p. 106-110
5 p.
 artikel
67 The use of four-point probe sheet resistance measurements for characterizing low dose ion implantation Smith, Alan K.
 1985
 6 1-2 p. 382-388
7 p.
 artikel
68 Three-stage acceleration system for high energy implanter Pedersen, B.O.
 1985
 6 1-2 p. 258-263
6 p.
 artikel
69 Transient annealing for the production of n+ contact layers in GaAs Sealy, B.J.
 1985
 6 1-2 p. 325-329
5 p.
 artikel
70 Transient annealing of ion implanted semiconductor materials Wilson, S.R.
 1985
 6 1-2 p. 307-315
9 p.
 artikel
71 Uniform implantation with electrostatic scanning using a target repositioning technique Turner, N.
 1985
 6 1-2 p. 224-227
4 p.
 artikel
72 Uniform large area beam scanning with a freeman source Kanter, Michael
 1985
 6 1-2 p. 116-118
3 p.
 artikel
73 Wafer charging and beam interactions in ion implantation Mack, M.E.
 1985
 6 1-2 p. 405-411
7 p.
 artikel
74 Wafer orientation for wayflow end stations Brown, R.L.
 1985
 6 1-2 p. 357-364
8 p.
 artikel
                             74 gevonden resultaten
 
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