| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Application of microdosimetric concepts in CaCO3:Ce3+/Dy3+ for megalevel radiation dosimetry
|
Lakshmanan, Arunachalam
|
|
|
487 |
C |
p. 12-24
|
artikel
|
| 2 |
Characterization of microcraters fabricated on the silicon surface by single and multi-pulse laser ablation at various laser intensities
|
Rahman, T.U.
|
|
|
487 |
C |
p. 45-51
|
artikel
|
| 3 |
Defect characterization of damaged region of carbon implanted alumina: Effect of ion fluence and annealing
|
Sharma, S.K.
|
|
|
487 |
C |
p. 90-95
|
artikel
|
| 4 |
Double differential cross sections of neutron production by 135 and 180 MeV protons on A-150 tissue-equivalent plastic
|
Kajimoto, Tsuyoshi
|
|
|
487 |
C |
p. 38-44
|
artikel
|
| 5 |
Editorial Board
|
|
|
|
487 |
C |
p. ii
|
artikel
|
| 6 |
Effect of heat treatment on the migration behaviour of selenium implanted into polycrystalline SiC
|
Abdalla, Z.A.Y.
|
|
|
487 |
C |
p. 30-37
|
artikel
|
| 7 |
Electron and positron impact single ionization TDCS of argon atoms in the second Born approximation
|
Purohit, G.
|
|
|
487 |
C |
p. 52-60
|
artikel
|
| 8 |
Gamma dosimetric properties of radiophotoluminescent CaSO4:Eu3+ with novel readout instrument
|
Mahala, V.K.
|
|
|
487 |
C |
p. 78-84
|
artikel
|
| 9 |
Geant4 physics processes for microdosimetry and secondary electron emission simulation: Extension of MicroElec to very low energies and 11 materials (C, Al, Si, Ti, Ni, Cu, Ge, Ag, W, Kapton and SiO2)
|
Gibaru, Q.
|
|
|
487 |
C |
p. 66-77
|
artikel
|
| 10 |
High-resolution Rutherford backscattering spectrometry with an optimised solid-state detector
|
Robson, S.G.
|
|
|
487 |
C |
p. 1-7
|
artikel
|
| 11 |
Measurements of neutron capture cross-sections for 187Re isotope around 14 MeV neutrons and theoretical calculations of excitation functions
|
Song, Yueli
|
|
|
487 |
C |
p. 61-65
|
artikel
|
| 12 |
Preface
|
Dauletbekova, Alma
|
|
|
487 |
C |
p. 96
|
artikel
|
| 13 |
Production of low-energy SiCH3 + and SiC2H7 + ion beams for 3C-SiC film formation by selecting fragment ions from dimethylsilane
|
Yoshimura, Satoru
|
|
|
487 |
C |
p. 85-89
|
artikel
|
| 14 |
The eikonal approximation of the scattering theory for fast charged particles in a thin layer of crystalline and amorphous media
|
Shul’ga, N.F.
|
|
|
487 |
C |
p. 25-29
|
artikel
|
| 15 |
Validity of the diameter-length method for determining the bulk etch rate of a CR-39 detector
|
Kassim, Yasir Yahya
|
|
|
487 |
C |
p. 8-11
|
artikel
|
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