nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Annealing of the defects observed by Raman spectroscopy in UO2 irradiated by 25MeV He2+ ions
|
Desgranges, L. |
|
2014 |
327 |
C |
p. 74-77 4 p. |
artikel |
2 |
A statistical approach of the thermodynamic properties of UO2 at high temperature
|
Baldinozzi, Gianguido |
|
2014 |
327 |
C |
p. 68-73 6 p. |
artikel |
3 |
A thermal modelling of displacement cascades in uranium dioxide
|
Martin, G. |
|
2014 |
327 |
C |
p. 108-112 5 p. |
artikel |
4 |
Author Index Proceedings
|
|
|
2014 |
327 |
C |
p. 128-130 3 p. |
artikel |
5 |
Competing effects of electronic and nuclear energy loss on microstructural evolution in ionic-covalent materials
|
Zhang, Y. |
|
2014 |
327 |
C |
p. 33-43 11 p. |
artikel |
6 |
Contents
|
|
|
2014 |
327 |
C |
p. v- 1 p. |
artikel |
7 |
Corrosion under argon irradiation of titanium in the low MeV range: A study coupling AFM and Spectroscopic Ellipsometry
|
Do, Ngoc-Long |
|
2014 |
327 |
C |
p. 47-51 5 p. |
artikel |
8 |
Damage creation in porous silicon irradiated by swift heavy ions
|
Canut, B. |
|
2014 |
327 |
C |
p. 99-102 4 p. |
artikel |
9 |
Defect studies in quartz: Composite nature of the blue and UV emissions
|
Martini, Marco |
|
2014 |
327 |
C |
p. 15-21 7 p. |
artikel |
10 |
Determination of strain and damage profiles in irradiated materials: Application to cubic zirconia irradiated at high temperature
|
Channagiri, J. |
|
2014 |
327 |
C |
p. 9-14 6 p. |
artikel |
11 |
Editorial board
|
|
|
2014 |
327 |
C |
p. IFC- 1 p. |
artikel |
12 |
Effect of 10B(n, α)7Li irradiation on the structure of a sodium borosilicate glass
|
Peuget, S. |
|
2014 |
327 |
C |
p. 22-28 7 p. |
artikel |
13 |
Electron dynamics and energy dissipation in highly excited dielectrics
|
Rethfeld, B. |
|
2014 |
327 |
C |
p. 78-88 11 p. |
artikel |
14 |
Electronic structure calculations of positron lifetimes in SiC: Self-consistent schemes and relaxation effect
|
Wiktor, J. |
|
2014 |
327 |
C |
p. 63-67 5 p. |
artikel |
15 |
EMRS 2013 syposium M
|
Costantini, Jean-Marc |
|
2014 |
327 |
C |
p. 1- 1 p. |
artikel |
16 |
First principles defect energetics for simulations of silicon carbide under irradiation: Kinetic mechanisms of silicon di-interstitials
|
Liao, Ting |
|
2014 |
327 |
C |
p. 52-58 7 p. |
artikel |
17 |
Helium behaviour in UO2 through low fluence ion implantation studies
|
Garcia, P. |
|
2014 |
327 |
C |
p. 113-116 4 p. |
artikel |
18 |
Helium mobility in advanced nuclear ceramics
|
Agarwal, S. |
|
2014 |
327 |
C |
p. 117-120 4 p. |
artikel |
19 |
Ion irradiation effects on third generation SiC fibers in elastic and inelastic energy loss regimes
|
Huguet-Garcia, J. |
|
2014 |
327 |
C |
p. 93-98 6 p. |
artikel |
20 |
Ion irradiation-induced diffusion in bixbyite-fluorite related oxides: Dislocations and phase transformation
|
Rolly, Gaboriaud |
|
2014 |
327 |
C |
p. 44-46 3 p. |
artikel |
21 |
Modeling charged defects inside density functional theory band gaps
|
Schultz, Peter A. |
|
2014 |
327 |
C |
p. 2-8 7 p. |
artikel |
22 |
Point defects in 4H–SiC epilayers introduced by neutron irradiation
|
Hazdra, Pavel |
|
2014 |
327 |
C |
p. 124-127 4 p. |
artikel |
23 |
Pulsed cathodoluminescence of YLiF4 crystals at 15K
|
Bikhert, Y.V. |
|
2014 |
327 |
C |
p. 121-123 3 p. |
artikel |
24 |
Quantification of the number of Si interstitials formed by hydrogen implantation in silicon using boron marker layers
|
Darras, F.-X. |
|
2014 |
327 |
C |
p. 29-32 4 p. |
artikel |
25 |
Radiation effects in carbides: TiC and ZrC versus SiC
|
Pellegrino, S. |
|
2014 |
327 |
C |
p. 103-107 5 p. |
artikel |
26 |
Strain build-up in SiC implanted at different temperatures
|
Barbot, J.-F. |
|
2014 |
327 |
C |
p. 59-62 4 p. |
artikel |
27 |
TEM study of damage recovery in SiC by swift Xe ion irradiation
|
Skuratov, V.A. |
|
2014 |
327 |
C |
p. 89-92 4 p. |
artikel |