| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of an electrostatic column used to produce a microfocused ion beam
|
Cummings, Kevin D.
|
|
1987
|
28 |
4 |
p. 575-579
5 p.
|
artikel
|
| 2 |
An isotope separator for small noble gas samples
|
Lehmann, B.E.
|
|
1987
|
28 |
4 |
p. 571-574
4 p.
|
artikel
|
| 3 |
A note on obtaining symmetrical angular yield curves in MeV ion channeling
|
Ruan, J.
|
|
1987
|
28 |
4 |
p. 580-582
3 p.
|
artikel
|
| 4 |
A simple theoretical approach to multiple ionization and its application for 5.1 and 5.5 MeV/u X q++ Ne collisions
|
Sulik, B.
|
|
1987
|
28 |
4 |
p. 509-518
10 p.
|
artikel
|
| 5 |
Author index
|
|
|
1987
|
28 |
4 |
p. 595-601
7 p.
|
artikel
|
| 6 |
Bent perfect crystals as neutron reflectors: Test experiments with Si plates
|
Rekveldt, M.Th.
|
|
1987
|
28 |
4 |
p. 583-591
9 p.
|
artikel
|
| 7 |
Binary collision cascade prediction of critical ion-to-atom arrival ratio in the production of thin films with reduced intrinsic stress
|
Brighton, D.R.
|
|
1987
|
28 |
4 |
p. 527-533
7 p.
|
artikel
|
| 8 |
Calendar
|
|
|
1987
|
28 |
4 |
p. 592-594
3 p.
|
artikel
|
| 9 |
Characterization of the ion beam mixed Fe/SiO2 interface by Mössbauer spectroscopy
|
Zhang, P.Q.
|
|
1987
|
28 |
4 |
p. 561-566
6 p.
|
artikel
|
| 10 |
Deuteron stopping cross sections in transition metal hydrides
|
Malbrough, D.J.
|
|
1987
|
28 |
4 |
p. 459-469
11 p.
|
artikel
|
| 11 |
Factors affecting the distributions of implanted ions
|
Hautala, M.
|
|
1987
|
28 |
4 |
p. 519-526
8 p.
|
artikel
|
| 12 |
Foil dissociation of 40–120 keV/p hydrogen clusters
|
Mazuy, B.
|
|
1987
|
28 |
4 |
p. 497-501
5 p.
|
artikel
|
| 13 |
Incongruent sputtering in metal oxides
|
Langell, M.A.
|
|
1987
|
28 |
4 |
p. 502-508
7 p.
|
artikel
|
| 14 |
Induction time in Makrofol E
|
Bourdin, J.C.
|
|
1987
|
28 |
4 |
p. 548-553
6 p.
|
artikel
|
| 15 |
Influence of the implantation of transition metal ions on the electrocatalytic activity of carbon materials
|
Poplavskij, V.V.
|
|
1987
|
28 |
4 |
p. 534-539
6 p.
|
artikel
|
| 16 |
Ion bombardment- and temperature-assisted incorporation of oxygen in molybdenum
|
Saidoh, M.
|
|
1987
|
28 |
4 |
p. 540-547
8 p.
|
artikel
|
| 17 |
Molecular-orbital method for evaluating compound semiconductor range parameters
|
Wang, Dening
|
|
1987
|
28 |
4 |
p. 488-492
5 p.
|
artikel
|
| 18 |
Range profiles of 10 to 390 keV ions (29 ≦ Z 1 ≦ 83) implanted into amorphous silicon
|
Fichtner, P.F.P.
|
|
1987
|
28 |
4 |
p. 481-487
7 p.
|
artikel
|
| 19 |
Sampling adequacy and measurement significance in ion beam analysis
|
Watterson, J.I.W.
|
|
1987
|
28 |
4 |
p. 554-560
7 p.
|
artikel
|
| 20 |
Scope of NIM-B
|
|
|
1987
|
28 |
4 |
p. 606-
1 p.
|
artikel
|
| 21 |
Shadow cones formed by target atoms calculated for 1 to 3 keV H+, He+, Li+, Ne+ and Na+ ion bombardment
|
Chang, C.S.
|
|
1987
|
28 |
4 |
p. 493-496
4 p.
|
artikel
|
| 22 |
Stopping power measurements of 20–180 keV 1H and 4He in indium phosphide using thick target backscattering
|
Lee, Stephen R.
|
|
1987
|
28 |
4 |
p. 470-480
11 p.
|
artikel
|
| 23 |
Subject index
|
|
|
1987
|
28 |
4 |
p. 602-605
4 p.
|
artikel
|
| 24 |
Surface roughness correction in thick target pixe analysis
|
Šmit, Ž.
|
|
1987
|
28 |
4 |
p. 567-570
4 p.
|
artikel
|
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