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                             30 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Amorphous zone evolution in Si during elevated temperature ion bombardment Kucheyev, S.O.
 2001
 174 1-2 p. 130-136
7 p.
 artikel
2 Analysis of proton elastic recoil cross section by using R-matrix theory Kim, Suk Kwon
 2001
 174 1-2 p. 33-40
8 p.
 artikel
3 Angular dependence of the energy loss of ions in solids: Computer simulations and analysis of models Famá, M.
 2001
 174 1-2 p. 16-24
9 p.
 artikel
4 Calendar 2001
 174 1-2 p. 225-227
3 p.
 artikel
5 Commissioning of a hydrogen cluster target at the experimental storage ring Krämer, A.
 2001
 174 1-2 p. 205-211
7 p.
 artikel
6 Crystal-face dependence of low-energy ion scattering signals Cortenraad, R.
 2001
 174 1-2 p. 173-180
8 p.
 artikel
7 Defect formation and annealing behavior of Si implanted by high-energy 166Er ions Li, Yuguo
 2001
 174 1-2 p. 137-142
6 p.
 artikel
8 Determination of H recoil cross-sections for He ions incident at 2.5–4.5 MeV and recoil angles from 30° to 60° Bogdanović Radović, I.
 2001
 174 1-2 p. 25-32
8 p.
 artikel
9 Differences in the energy loss of protons and positive muons in solids Valdés, J.E.
 2001
 174 1-2 p. 9-15
7 p.
 artikel
10 Effect of swift heavy ion (SHI) irradiation on dielectric properties of acetoacetanilide crystals Prabhu, Sharada G.
 2001
 174 1-2 p. 159-162
4 p.
 artikel
11 Excitation function for the nat Ti(p,x)48 V nuclear process: Evaluation and new measurements for practical applications Szelecsényi, F
 2001
 174 1-2 p. 47-64
18 p.
 artikel
12 Generation and healing behavior of radiation-induced optical absorption in fluoride phosphate glasses: The dependence on UV radiation sources and temperature Natura, U
 2001
 174 1-2 p. 143-150
8 p.
 artikel
13 Interaction of high-energy Pb ions with an island metal film on the surface of a LiF single crystal Vorobyova, I.V.
 2001
 174 1-2 p. 70-76
7 p.
 artikel
14 Ion beam measurements of Sn/In ratios in indium tin oxide films prepared by pulsed-laser deposition Ren, X.T.
 2001
 174 1-2 p. 187-193
7 p.
 artikel
15 Irradiation of semiconductor devices using a 10 MeV travelling wave electron linear accelerator Quanfeng, Li
 2001
 174 1-2 p. 194-198
5 p.
 artikel
16 Mean projected range and range straggling of Bi+ ions implanted into lithium triborate Wang, Ke-Ming
 2001
 174 1-2 p. 65-69
5 p.
 artikel
17 Measurement of photon-induced L shell fluorescence cross-sections of gold and lead at 21.6, 23.7 and 25.8 keV Mandal, A.C
 2001
 174 1-2 p. 41-46
6 p.
 artikel
18 Mixed simulation of the multiple elastic scattering of electrons and positrons using partial-wave differential cross-sections Benedito, E.
 2001
 174 1-2 p. 91-110
20 p.
 artikel
19 Modeling layer-by-layer growth in ion beam assisted deposition of thin films, II: Conditions for stationary step flow on stepped surfaces Koponen, Ismo T.
 2001
 174 1-2 p. 111-115
5 p.
 artikel
20 Modeling of excimer laser radiation induced defect generation in fluoride phosphate glasses Natura, U.
 2001
 174 1-2 p. 151-158
8 p.
 artikel
21 Monte Carlo simulation of multiple and plural scattering in elastic recoil detection Arstila, K
 2001
 174 1-2 p. 163-172
10 p.
 artikel
22 Pore shape control in nanoporous particle track etched membrane Ferain , E.
 2001
 174 1-2 p. 116-122
7 p.
 artikel
23 Preparation of thin osmium targets by electrodeposition Chakrabarty, S.
 2001
 174 1-2 p. 212-214
3 p.
 artikel
24 Range distribution and electronic stopping powers for fluorine ions in 19 F + -implanted potassium titanyl phosphate and LiNbO3 Liu, Xiangdong
 2001
 174 1-2 p. 1-8
8 p.
 artikel
25 Rutherford backscattering/channeling study of a thin AlGaN layer on Al2O3(0001) Wu, M.F.
 2001
 174 1-2 p. 181-186
6 p.
 artikel
26 The density effects in polycrystal sputtering Shulga, V.I.
 2001
 174 1-2 p. 77-90
14 p.
 artikel
27 The influence of phosphorus and hydrogen ion implantation on the photoluminescence of SiO2 with Si nanoinclusions Tetelbaum, D.I.
 2001
 174 1-2 p. 123-129
7 p.
 artikel
28 Time-resolved energy loss spectroscopy of energetic heavy ion beams generating a dense plasma Varentsov, D.
 2001
 174 1-2 p. 215-221
7 p.
 artikel
29 Transition temperature depth profiling of Cs137 gamma-irradiated YBCO ceramic Leyva, A.
 2001
 174 1-2 p. 222-224
3 p.
 artikel
30 Two-beam irradiation chamber for in situ ion-implantation and RBS at temperatures from 15 K to 300 K Breeger, B.
 2001
 174 1-2 p. 199-204
6 p.
 artikel
                             30 gevonden resultaten
 
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