nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Calculating moments of range distributions
|
Winterbon, K.B. |
|
1986 |
17 |
3 |
p. 193-202 10 p. |
artikel |
2 |
Calendar
|
|
|
1986 |
17 |
3 |
p. 285-287 3 p. |
artikel |
3 |
Contribution from the experimental apparatus to the low energy background in Rutherford backscattering experiments
|
Varga, L. |
|
1986 |
17 |
3 |
p. 260-264 5 p. |
artikel |
4 |
CR 39 used as a detector in a neutron dosimeter
|
Vareille, J.C. |
|
1986 |
17 |
3 |
p. 280-284 5 p. |
artikel |
5 |
Defect and dopant depth profiles in boron-implanted silicon studied with channeling and nuclear reaction analysis
|
Vos, M. |
|
1986 |
17 |
3 |
p. 234-241 8 p. |
artikel |
6 |
Defects created by self-implantation in Si as a function of temperature and fluence
|
Prunier, C. |
|
1986 |
17 |
3 |
p. 227-233 7 p. |
artikel |
7 |
Diffusion markers in Al/metal thin-film reactions
|
Colgan, E.G. |
|
1986 |
17 |
3 |
p. 242-249 8 p. |
artikel |
8 |
Internal energy distribution of sputtered sulfur molecules
|
de Jonge, R. |
|
1986 |
17 |
3 |
p. 213-226 14 p. |
artikel |
9 |
Liquid target generation techniques in molecular dynamics studies of sputtering
|
Lo, D.Y. |
|
1986 |
17 |
3 |
p. 207-212 6 p. |
artikel |
10 |
Monte Carlo simulations of anomalon experiments
|
Norén, B. |
|
1986 |
17 |
3 |
p. 265-274 10 p. |
artikel |
11 |
Range distributions of 50–400 keV Hg+in amorphous silicon and Si-Ar binary targets
|
Wang Ke-Ming, |
|
1986 |
17 |
3 |
p. 203-206 4 p. |
artikel |
12 |
Submicroscopic nuclear track kinetic theory applied to initial chemical etching of makrofol E
|
Mazzei, R. |
|
1986 |
17 |
3 |
p. 275-279 5 p. |
artikel |
13 |
The 180° enhancement of the ion backscattering surface peak yield from near (110)Au
|
Moore, J.A. |
|
1986 |
17 |
3 |
p. 250-259 10 p. |
artikel |