no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
1 |
A combined Raman and XPS study of the effects induced on glutathione by ion beam irradiation
|
Compagnini, G. |
|
1996 |
116 |
1-4 |
p. 242-245 4 p. |
article |
2 |
Adsorbate-adsorbate interactions in Na covered Mg surfaces
|
Oliva, A. |
|
1996 |
116 |
1-4 |
p. 420-423 4 p. |
article |
3 |
Alfa-particle irradiation induced defects in SiO2 films of SiSiO2 structures
|
Koman, B.P. |
|
1996 |
116 |
1-4 |
p. 389-392 4 p. |
article |
4 |
An ESR study of heavily ion-irradiated SiO2 glass
|
Miyamaru, Hiroyuki |
|
1996 |
116 |
1-4 |
p. 393-397 5 p. |
article |
5 |
Angular distribution and expansion of laser ablation plumes measured by fast intensified charge coupled device photographs
|
Mele, A. |
|
1996 |
116 |
1-4 |
p. 257-261 5 p. |
article |
6 |
Anomalous depth profiles and diffusional behavior of noble gases implanted into photoresist films
|
Kaschny, J.R. |
|
1996 |
116 |
1-4 |
p. 225-229 5 p. |
article |
7 |
Anomalous electrical resistivity of Al2O3 single crystal degraded by electron irradiation
|
Terai, Takayuki |
|
1996 |
116 |
1-4 |
p. 294-298 5 p. |
article |
8 |
Application of thermoluminescence to determine the presence of precursor oxides in high T c ceramic superconductors
|
Burrafato, G. |
|
1996 |
116 |
1-4 |
p. 531-535 5 p. |
article |
9 |
Atomic force microscopy on SiO2 layers grown on Ge implanted silicon
|
Raineri, V. |
|
1996 |
116 |
1-4 |
p. 482-485 4 p. |
article |
10 |
Atomic islands on the (100) alkali halide surfaces observed with atomic force microscopy
|
Miura, K. |
|
1996 |
116 |
1-4 |
p. 486-491 6 p. |
article |
11 |
Author index
|
|
|
1996 |
116 |
1-4 |
p. 559-568 10 p. |
article |
12 |
Bonding of dopants to irradiated polymers
|
Fink, D. |
|
1996 |
116 |
1-4 |
p. 434-439 6 p. |
article |
13 |
Ce doped hafniate scintillating glasses: thermally stimulated luminescence and photoluminescence
|
Martini, M. |
|
1996 |
116 |
1-4 |
p. 116-120 5 p. |
article |
14 |
Characterization of aged latent ion tracks in polyimide
|
Fink, D. |
|
1996 |
116 |
1-4 |
p. 66-71 6 p. |
article |
15 |
Chemical selectivity and energy transfer mechanisms in the radiation-induced modification of polyethersulphone
|
Marletta, G. |
|
1996 |
116 |
1-4 |
p. 246-252 7 p. |
article |
16 |
Committees, exhibitors and sponsors
|
|
|
1996 |
116 |
1-4 |
p. viii- 1 p. |
article |
17 |
Comparison of formation process of ultraviolet induced color centers in GeO2SiO2 glass fiber preform and Ge-implanted SiO2
|
Nishii, Junji |
|
1996 |
116 |
1-4 |
p. 150-153 4 p. |
article |
18 |
Complex centers in γ-irradiated LiF: Cu2+ crystals
|
Scacco, A. |
|
1996 |
116 |
1-4 |
p. 545-548 4 p. |
article |
19 |
Defect centers in X-irradiated alkali phosphate glasses: EPR studies
|
Archidi, M.E. |
|
1996 |
116 |
1-4 |
p. 145-149 5 p. |
article |
20 |
Desorption of atoms and excimers upon self-trapping of excitons in rare gas solids
|
Chen, L.F. |
|
1996 |
116 |
1-4 |
p. 61-65 5 p. |
article |
21 |
Editorial
|
Foti, Gaetano |
|
1996 |
116 |
1-4 |
p. vii- 1 p. |
article |
22 |
Editorial Board
|
|
|
1996 |
116 |
1-4 |
p. ii- 1 p. |
article |
23 |
Effect of ultraviolet light irradiation on electrical properties of CdBr2 : Cu+ single crystals
|
Novosad, S.S. |
|
1996 |
116 |
1-4 |
p. 265-268 4 p. |
article |
24 |
Effects of dual and triple beam irradiation with O, He and H-ions on damage structures in single crystal Al2O3
|
Katano, Y. |
|
1996 |
116 |
1-4 |
p. 230-234 5 p. |
article |
25 |
Electrical property of high-fluence nickel-implanted single crystal alumina
|
Kobayashi, Tomohiro |
|
1996 |
116 |
1-4 |
p. 187-190 4 p. |
article |
26 |
Electron-stimulated positive ion emission from NaCl crystal surface
|
Kolodziej, J. |
|
1996 |
116 |
1-4 |
p. 113-115 3 p. |
article |
27 |
ESR and PL centers induced by gamma rays in silica
|
Boscaino, R. |
|
1996 |
116 |
1-4 |
p. 373-377 5 p. |
article |
28 |
ESR studies of UV-irradiated silica gels containing a functional group at silicon
|
Matsui, Kazunori |
|
1996 |
116 |
1-4 |
p. 253-256 4 p. |
article |
29 |
Etching threshold for ion tracks in polyimide
|
Trautmann, C. |
|
1996 |
116 |
1-4 |
p. 429-433 5 p. |
article |
30 |
Eu concentration dependence of photostimulated luminescence in X-ray or UV-ray irradiated KCl: Eu phosphor ceramics
|
Nanto, H. |
|
1996 |
116 |
1-4 |
p. 542-544 3 p. |
article |
31 |
Excimer laser induced thermal evaporation and ablation of silicon carbide
|
Reitano, R. |
|
1996 |
116 |
1-4 |
p. 369-372 4 p. |
article |
32 |
Experimental evidence of the composite nature of the 3.1 eV luminescence in natural silica
|
Anedda, A. |
|
1996 |
116 |
1-4 |
p. 360-363 4 p. |
article |
33 |
Factors affecting extended hydration depths in ion-implanted fused silica
|
Arnold, G.W. |
|
1996 |
116 |
1-4 |
p. 364-368 5 p. |
article |
34 |
Formation and chemical-physical characterization of metallic nanoclusters in ion-implanted silica
|
Battaglin, G. |
|
1996 |
116 |
1-4 |
p. 102-108 7 p. |
article |
35 |
Formation and optical properties of nanometer-sized amorphous arsenic clusters embedded in amorphous SiO2 by ion implantation
|
Hosono, H. |
|
1996 |
116 |
1-4 |
p. 178-182 5 p. |
article |
36 |
Formation of carbon nitride — a novel hard coating
|
Chubaci, J.F.D. |
|
1996 |
116 |
1-4 |
p. 452-456 5 p. |
article |
37 |
Formation of lithium colloids in electron-irradiated Li2O
|
Vajda, P. |
|
1996 |
116 |
1-4 |
p. 183-186 4 p. |
article |
38 |
Formation of nonlinear optical waveguides by using ion-exchange and implantation techniques
|
Arnold, G.W. |
|
1996 |
116 |
1-4 |
p. 507-510 4 p. |
article |
39 |
From processing of cosmic ices to optical communications
|
Brown, Walter L. |
|
1996 |
116 |
1-4 |
p. 1-12 12 p. |
article |
40 |
Gold nanocluster formation in silicate glasses by low fluence ion implantation and annealing
|
Battaglin, G. |
|
1996 |
116 |
1-4 |
p. 527-530 4 p. |
article |
41 |
He+ and Ar+ bombardment induced chemical changes in CrOSi layers
|
Bertóti, I. |
|
1996 |
116 |
1-4 |
p. 200-206 7 p. |
article |
42 |
High fluence effects in scintillating plastic fibres by 16 MeV electron irradiation
|
Klose, H.A. |
|
1996 |
116 |
1-4 |
p. 235-241 7 p. |
article |
43 |
Implantation of reactive and unreactive ions in silicates and ices
|
Strazzulla, G |
|
1996 |
116 |
1-4 |
p. 289-293 5 p. |
article |
44 |
Influence of irradiation spectrum and implanted ions on the amorphization of ceramics
|
Zinkle, S.J. |
|
1996 |
116 |
1-4 |
p. 92-101 10 p. |
article |
45 |
Influence of LiF film growth conditions on electron induced color center formation
|
Baldacchini, G. |
|
1996 |
116 |
1-4 |
p. 447-451 5 p. |
article |
46 |
In situ EELS and TEM observation of silicon carbide irradiated with helium ions at low temperature and successively annealed
|
Hojou, K. |
|
1996 |
116 |
1-4 |
p. 382-388 7 p. |
article |
47 |
Investigation of defects in KTiOPO4 after indium implantation and diffusion
|
Rüb, M. |
|
1996 |
116 |
1-4 |
p. 502-506 5 p. |
article |
48 |
Ion beam effects on the surface and on the bulk of thin films of polymethylmethacrylate
|
Licciardello, Antonino |
|
1996 |
116 |
1-4 |
p. 168-172 5 p. |
article |
49 |
Ion beam induced amorphization of monazite
|
Meldrum, A. |
|
1996 |
116 |
1-4 |
p. 220-224 5 p. |
article |
50 |
Ion beam induced chemical effects in organosilicon polymers
|
Tóth, András |
|
1996 |
116 |
1-4 |
p. 299-304 6 p. |
article |
51 |
Ion-beam-induced crosslinking of polystyrene — still an unsolved puzzle
|
Klaumünzer, S. |
|
1996 |
116 |
1-4 |
p. 154-158 5 p. |
article |
52 |
Ion beam induced reduction of metallic cations in yttria-zirconia
|
Ingo, G.M. |
|
1996 |
116 |
1-4 |
p. 440-446 7 p. |
article |
53 |
Ion implantation and diffusion of Al in a SiO2 Si system
|
La Ferla, A. |
|
1996 |
116 |
1-4 |
p. 378-381 4 p. |
article |
54 |
Ion-induced luminescence of silica glasses
|
Fujiwara, Masaaki |
|
1996 |
116 |
1-4 |
p. 536-541 6 p. |
article |
55 |
Ion tracks in mica studied with scanning force microscopy using force modulation
|
Neumann, R. |
|
1996 |
116 |
1-4 |
p. 492-495 4 p. |
article |
56 |
Ion versus neutral irradiation of thin films of amorphous SiO2: an in situ X-ray photoelectron spectroscopy study
|
Torrisi, Alberto |
|
1996 |
116 |
1-4 |
p. 342-346 5 p. |
article |
57 |
Irradiation-induced amorphization of AlPO4
|
Sreeram, A.N. |
|
1996 |
116 |
1-4 |
p. 126-130 5 p. |
article |
58 |
KeV-MeV ion irradiation of polyvinylidene fluoride (PVDF) films
|
Torrisi, L. |
|
1996 |
116 |
1-4 |
p. 473-477 5 p. |
article |
59 |
Kinetics of electron-hole recombination in X-ray irradiated cubic stabilized zirconia
|
Azzoni, C.B. |
|
1996 |
116 |
1-4 |
p. 191-194 4 p. |
article |
60 |
Laser-damage of cleaved and polished CaF2 at 248 nm
|
Gogoll, S. |
|
1996 |
116 |
1-4 |
p. 279-283 5 p. |
article |
61 |
La-, Sn- and Hf-implanted in TiO2 single crystals: lattice disorder and lattice site location
|
Fromknecht, R. |
|
1996 |
116 |
1-4 |
p. 109-112 4 p. |
article |
62 |
LET-, ionic species- and temperature-dependence on Auger-free and self-trapped exciton luminescence of ion-irradiated BaF2 and CsCl single crystals
|
Kimura, Kazuie |
|
1996 |
116 |
1-4 |
p. 57-60 4 p. |
article |
63 |
Metal precipitation in one-dimensional crystal of CsMnCl3 · 2H2O
|
Yoshinari, T. |
|
1996 |
116 |
1-4 |
p. 554-557 4 p. |
article |
64 |
MeV-cluster impacts and related phenomena
|
Perez, A. |
|
1996 |
116 |
1-4 |
p. 13-17 5 p. |
article |
65 |
Modification of intrinsically conducting polymers by ion implantation
|
Schiestel, S. |
|
1996 |
116 |
1-4 |
p. 164-167 4 p. |
article |
66 |
Novel effects of weak magnetic fields on post-implantation damage in semiconductors and superconducting ceramics
|
Khait, Yu.L. |
|
1996 |
116 |
1-4 |
p. 516-520 5 p. |
article |
67 |
Optical absorption (OA) bands in fluorites by heavy gamma irradiation
|
Dantas, Noelio Oliveira |
|
1996 |
116 |
1-4 |
p. 269-273 5 p. |
article |
68 |
Optical defects in ion damaged 6H-silicon carbide
|
Musumeci, P. |
|
1996 |
116 |
1-4 |
p. 327-331 5 p. |
article |
69 |
Optical doping of materials by erbium ion implantation
|
Priolo, F. |
|
1996 |
116 |
1-4 |
p. 77-84 8 p. |
article |
70 |
Optical effects in NaF crystals implanted with 100 keV ions
|
Davidson, A.T. |
|
1996 |
116 |
1-4 |
p. 216-219 4 p. |
article |
71 |
Photostimulated luminescence in CaS: Eu,Sm phosphor ceramics induced by excitation with ionizing radiation
|
Nanto, H. |
|
1996 |
116 |
1-4 |
p. 262-264 3 p. |
article |
72 |
Physical properties of lead-silicate glassy thin films deposited by sputtering in Ar : H2 mixtures
|
Rigato, V. |
|
1996 |
116 |
1-4 |
p. 424-428 5 p. |
article |
73 |
Positron annihilation and ESR study of irradiation-induced defects in silica glass
|
Hasegawa, M. |
|
1996 |
116 |
1-4 |
p. 347-354 8 p. |
article |
74 |
Preparation of nanometer-size dispersions of iron in sapphire by ion implantation and annealing
|
McHargue, Carl J. |
|
1996 |
116 |
1-4 |
p. 173-177 5 p. |
article |
75 |
Pulsed laser deposition of thin films for optical applications
|
Afonso, C.N. |
|
1996 |
116 |
1-4 |
p. 404-409 6 p. |
article |
76 |
Quantum effects in the dynamics of intensity-dependent two-mode two-photon models of radiation—matter interaction
|
Napoli, A. |
|
1996 |
116 |
1-4 |
p. 465-472 8 p. |
article |
77 |
Radiation damage in nuclear fuel materials: the “rim” effect in UO2 and damage in inert matrices for transmutation of actinides
|
Matzke, Hj. |
|
1996 |
116 |
1-4 |
p. 121-125 5 p. |
article |
78 |
Radiation effects in vacuum-ultraviolet-irradiated SiN x :H films
|
Akazawa, Housei |
|
1996 |
116 |
1-4 |
p. 355-359 5 p. |
article |
79 |
Radiation effects of ArF excimer laser on crystalline Si3N4
|
Nakamae, Kazuo |
|
1996 |
116 |
1-4 |
p. 461-464 4 p. |
article |
80 |
Radiation effects under multiply charged ion impacts
|
Parilis, E. |
|
1996 |
116 |
1-4 |
p. 478-481 4 p. |
article |
81 |
Radiation resistance of the oxide spinel: the role of stoichiometry on damage response
|
Sickafus, Kurt E. |
|
1996 |
116 |
1-4 |
p. 85-91 7 p. |
article |
82 |
Raman spectroscopy of ion irradiated amorphous carbons
|
Baratta, G.A. |
|
1996 |
116 |
1-4 |
p. 195-199 5 p. |
article |
83 |
Recovery of neutron-induced defects in near-stoichiometric spinel ceramics irradiated at around 500°C
|
Yano, Toyohiko |
|
1996 |
116 |
1-4 |
p. 131-135 5 p. |
article |
84 |
Self-trapped exciton model of heavy-ion track registration
|
Itoh, Noriaki |
|
1996 |
116 |
1-4 |
p. 33-36 4 p. |
article |
85 |
Silicon carbide: synthesis and processing
|
Wesch, W. |
|
1996 |
116 |
1-4 |
p. 305-321 17 p. |
article |
86 |
Silicon oxide thin films obtained by Ar+ bombardment of Si(100) in oxygen atmosphere at room temperature
|
Terrasi, A. |
|
1996 |
116 |
1-4 |
p. 416-419 4 p. |
article |
87 |
Site-selective luminescence study of defects. in gamma-irradiated glassy germanium dioxide
|
Skuja, L. |
|
1996 |
116 |
1-4 |
p. 549-553 5 p. |
article |
88 |
Space charge formation and relaxation in ion-bombarded poly(imide) Kapton films
|
Costantini, J.M. |
|
1996 |
116 |
1-4 |
p. 496-501 6 p. |
article |
89 |
Spectrophotometry of ion implanted silicon carbide thin films
|
Laine, A.D. |
|
1996 |
116 |
1-4 |
p. 338-341 4 p. |
article |
90 |
Spin and charge dynamics in heavy ion irradiated polyimide Kapton
|
Salvetat, J.-P. |
|
1996 |
116 |
1-4 |
p. 284-288 5 p. |
article |
91 |
Structural and optical properties of low nnergy electrons irradiated KCl:LiF multilayer films
|
Somma, F. |
|
1996 |
116 |
1-4 |
p. 212-215 4 p. |
article |
92 |
Structural changes and Si redistribution in Si+ implanted silica glass
|
Wendler, E. |
|
1996 |
116 |
1-4 |
p. 332-337 6 p. |
article |
93 |
Structural characteristic of irradiated and unirradiated ices
|
Leto, G. |
|
1996 |
116 |
1-4 |
p. 49-52 4 p. |
article |
94 |
Structural freedom, topological disorder, and the irradiation-induced amorphization of ceramic structures
|
Hobbs, L.W. |
|
1996 |
116 |
1-4 |
p. 18-25 8 p. |
article |
95 |
Study of damage structure in magnesium oxide single crystals after argon implantation
|
Friedland, E. |
|
1996 |
116 |
1-4 |
p. 136-140 5 p. |
article |
96 |
Sub-gap optical properties of ion implanted SiC
|
Wendler, E. |
|
1996 |
116 |
1-4 |
p. 398-403 6 p. |
article |
97 |
Surface and bulk study of calcium phosphate bioceramics obtained by Metal Organic Chemical Vapor Deposition
|
Allen, G.C. |
|
1996 |
116 |
1-4 |
p. 457-460 4 p. |
article |
98 |
Surface relaxations of selectively excited rare-gas doped rare-gas solids
|
Runne, M. |
|
1996 |
116 |
1-4 |
p. 53-56 4 p. |
article |
99 |
Swift atomic ion irradiation of C60 films: dependence of the damage cross section on the primary ion stopping power
|
Papaléo, R.M. |
|
1996 |
116 |
1-4 |
p. 274-278 5 p. |
article |
100 |
Swift heavy ion irradiation of polystyrene
|
Balanzat, E. |
|
1996 |
116 |
1-4 |
p. 159-163 5 p. |
article |
101 |
Swift heavy ions effects in fluoropolymers: radicals and crosslinking
|
Betz, Natacha |
|
1996 |
116 |
1-4 |
p. 207-211 5 p. |
article |
102 |
TEM analysis of pellet-cladding bonding layer in high burnup BWR fuel
|
Nogita, K. |
|
1996 |
116 |
1-4 |
p. 521-526 6 p. |
article |
103 |
Temperature dependence of silicon precipitation in thin surface layer of Si3N4 induced by excimer laser irradiation
|
Kurosawa, Kou |
|
1996 |
116 |
1-4 |
p. 410-415 6 p. |
article |
104 |
The irradiation-induced crystalline-to-amorphous phase transition in α-SiC
|
Weber, W.J. |
|
1996 |
116 |
1-4 |
p. 322-326 5 p. |
article |
105 |
Thermal spike model of amorphous track formation in insulators irradiated by swift heavy ions
|
Szenes, G. |
|
1996 |
116 |
1-4 |
p. 141-144 4 p. |
article |
106 |
Time-resolved spectroscopic study of self-trapped excitons in germanium oxides
|
Itoh, C. |
|
1996 |
116 |
1-4 |
p. 72-76 5 p. |
article |
107 |
Time resolved spectroscopy for radiation damage processes induced by electronic excitation in insulators
|
Tanimura, K. |
|
1996 |
116 |
1-4 |
p. 26-32 7 p. |
article |
108 |
Time-resolved studies of carriers dynamics in wide band gap materials
|
Guizard, Stéphane |
|
1996 |
116 |
1-4 |
p. 43-48 6 p. |
article |
109 |
Track creation in SiO2 and BaFe12O19 by swift heavy ions: a thermal spike description
|
Toulemonde, M. |
|
1996 |
116 |
1-4 |
p. 37-42 6 p. |
article |
110 |
Ultrasonic attenuation measurements in neutron-irradiated quartz: a microscopic model for the tunneling states
|
Keppens, V. |
|
1996 |
116 |
1-4 |
p. 511-515 5 p. |
article |