nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A hrem study of the structure defects in α-Si3N4
|
Shulin, Wen |
|
1984 |
3 |
1-2 |
p. 15-16 2 p. |
artikel |
2 |
Compositional heterogeneity in ZnOBaOCoO varistors
|
Drozdyk, L. |
|
1984 |
3 |
1-2 |
p. 1-4 4 p. |
artikel |
3 |
Editorial Board
|
|
|
1984 |
3 |
1-2 |
p. ii- 1 p. |
artikel |
4 |
Effects of multicompressions on Al2O3 powder
|
Akashi, Tamotsu |
|
1984 |
3 |
1-2 |
p. 11-14 4 p. |
artikel |
5 |
Etching studies on Czochralski grown Te-rich Se x Te1−x crystals
|
Quang, Nguyen V. |
|
1984 |
3 |
1-2 |
p. 58-59 2 p. |
artikel |
6 |
Influence of lanthanum-doping on the Photochemical properties of SrTiO3 polycrystalline anodes
|
Campet, G. |
|
1984 |
3 |
1-2 |
p. 5-10 6 p. |
artikel |
7 |
Iron distribution in some Italian tuffs
|
Sersale, Riccardo |
|
1984 |
3 |
1-2 |
p. 51-57 7 p. |
artikel |
8 |
MRS news
|
|
|
1984 |
3 |
1-2 |
p. I-IV nvt p. |
artikel |
9 |
Optical selectivity of thin silver films prepared by rf-assisted dc magnetron sputtering
|
Valkonen, E. |
|
1984 |
3 |
1-2 |
p. 29-32 4 p. |
artikel |
10 |
Optimization of growth conditions for Sb2Te3 films
|
Patel, T.C. |
|
1984 |
3 |
1-2 |
p. 46-50 5 p. |
artikel |
11 |
Partial structure-field map for A3+B5+O4 compounds
|
Aldred, A.T. |
|
1984 |
3 |
1-2 |
p. 37-39 3 p. |
artikel |
12 |
Photoelectrical properties of Cds x Se1−x with controlled deviation from stoichlometry
|
Mochizuki, K. |
|
1984 |
3 |
1-2 |
p. 60-62 3 p. |
artikel |
13 |
Pyroelectric properties of thin films of sputtered lithium tantalate
|
D'amico, A. |
|
1984 |
3 |
1-2 |
p. 33-36 4 p. |
artikel |
14 |
Seed selection through ion channeling to produce uniformly oriented polycrystalline Si films on SiO2
|
Kung, K.T.-Y. |
|
1984 |
3 |
1-2 |
p. 24-28 5 p. |
artikel |
15 |
Structural relationship between epitaxially-grown Zn3P2 and InP substrates
|
Nakahara, S. |
|
1984 |
3 |
1-2 |
p. 40-42 3 p. |
artikel |
16 |
The corrosion process of fluoride glass in water and the effects of remelting and of glass composition
|
Barkatt, Aaron |
|
1984 |
3 |
1-2 |
p. 43-45 3 p. |
artikel |
17 |
The dependence of room-temperature photoluminescence efficiency of Si-doped Al x Ga1−x As on the V III flux ratio used during growth by molecular-beam epitaxy
|
Tsui, R.K. |
|
1984 |
3 |
1-2 |
p. 63-66 4 p. |
artikel |
18 |
X-ray evanescent- and standing-wave fluorescence studies using a layered synthetic microstructure
|
Barbee Jr., Troy W. |
|
1984 |
3 |
1-2 |
p. 17-23 7 p. |
artikel |