| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
A high-speed, power efficient, dead-zone-less phase frequency detector with differential structure
|
Abolhasani, Alireza
|
|
|
97 |
C |
p.
|
article
|
| 2 |
A low power subthreshold Schmitt Trigger based 12T SRAM bit cell with process-variation-tolerant write-ability
|
Sharma, Prakhar
|
|
|
97 |
C |
p.
|
article
|
| 3 |
An amperometric sensor readout chip and digital back-end with embedded integrator and redox potential generator for multi-analyte sensing applications
|
Silverio, Angelito A.
|
|
|
97 |
C |
p.
|
article
|
| 4 |
An inductorless 1.8 mW 2.9 dB NF differential LNA integrated to on-chip loop antenna with secondary loop for biomedical applications
|
Sunitha, Archana
|
|
|
97 |
C |
p.
|
article
|
| 5 |
A novel indirect read technique based SRAM with ability to charge recycle and differential read for low power consumption, high stability and performance
|
Nayak, Debasish
|
|
|
97 |
C |
p.
|
article
|
| 6 |
A novel programmable attenuator based low Gm-OTA for biomedical applications
|
Rajan, V. Senthil
|
|
|
97 |
C |
p.
|
article
|
| 7 |
Area-efficient low-latency polynomial basis finite field GF(2 m ) systolic multiplier for a class of trinomials
|
Pillutla, Siva Ramakrishna
|
|
|
97 |
C |
p.
|
article
|
| 8 |
Design options for implementing in standard CMOS drivers for MEMS body biasing
|
Miresan, Paul
|
|
|
97 |
C |
p.
|
article
|
| 9 |
Editorial Board
|
|
|
|
97 |
C |
p.
|
article
|
| 10 |
Low-power inductorless current-reuse LNAs with active and passive G m -enhancement
|
Chaghaei, Javad
|
|
|
97 |
C |
p.
|
article
|
| 11 |
Low-power low-phase noise VCO for 24 GHz applications
|
Siddique, Abrar
|
|
|
97 |
C |
p.
|
article
|
| 12 |
Resource-optimized combinational binary neural network circuits
|
Murovič, Tadej
|
|
|
97 |
C |
p.
|
article
|
| 13 |
Temperature and temporal drift compensation for Al2O3-gate ISFET-based pH sensor using machine learning techniques
|
Sinha, Soumendu
|
|
|
97 |
C |
p.
|
article
|
| 14 |
TID effects on I–V characteristics of bulk CMOS STD and ELT-based devices in 600 nm
|
Vaz, Pablo I.
|
|
|
97 |
C |
p.
|
article
|
Journal description