| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An FSM-based monitoring technique to differentiate between follow-up and original errors in safety-critical distributed embedded systems
|
Sedaghat, Yasser
|
|
|
42 |
6 |
p. 863-873
|
artikel
|
| 2 |
A 65nm CMOS fully-integrated dynamic reconfigurable differential power amplifier with high gain in both bands
|
Chi, Baoyong
|
|
|
42 |
6 |
p. 855-862
|
artikel
|
| 3 |
A 1-V 4-GHz wide tuning range voltage-controlled ring oscillator in 0.18μm CMOS
|
Sheu, Meng-Lieh
|
|
|
42 |
6 |
p. 897-902
|
artikel
|
| 4 |
Design and implementation of Multistage Interconnection Networks using Quantum-dot Cellular Automata
|
Tehrani, Mohammad A.
|
|
|
42 |
6 |
p. 913-922
|
artikel
|
| 5 |
Editorial board
|
|
|
|
42 |
6 |
p. IFC
|
artikel
|
| 6 |
Impact of within-wafer process variability on radiation response
|
Hu, Zhiyuan
|
|
|
42 |
6 |
p. 883-888
|
artikel
|
| 7 |
Low-energy GALS NoC with FIFO—Monitoring dynamic voltage scaling
|
Rahimi, Abbas
|
|
|
42 |
6 |
p. 889-896
|
artikel
|
| 8 |
Low-voltage FGMOS based analog building blocks
|
Gupta, Maneesha
|
|
|
42 |
6 |
p. 903-912
|
artikel
|
| 9 |
Novel universal threshold logic gate based on RTD and its application
|
Wei, Yi
|
|
|
42 |
6 |
p. 851-854
|
artikel
|
| 10 |
Physics-based numerical simulation and device characterizations of AlGaN/GaN HEMTs with temperature effects
|
Huq, Hasina F.
|
|
|
42 |
6 |
p. 923-928
|
artikel
|
| 11 |
Sub-threshold synchronizer
|
Zhou, Jun
|
|
|
42 |
6 |
p. 840-850
|
artikel
|
| 12 |
The dual-edge alignment technique with improved spur reduction effects in ring oscillators
|
Shieh Ali Saleh, Sajjad
|
|
|
42 |
6 |
p. 874-882
|
artikel
|
| 13 |
The novel SCR-based ESD protection with low triggering and high holding voltages
|
Kang, Myounggon
|
|
|
42 |
6 |
p. 837-839
|
artikel
|
| 14 |
Ultra low voltage, high performance operational transconductance amplifier and its application in a tunable Gm-C filter
|
Rezaei, Farzan
|
|
|
42 |
6 |
p. 827-836
|
artikel
|
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