| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A new fault current-sensing scheme for fast fault protection of the insulated gate bipolar transistor
|
Ji, In-Hwan
|
|
|
39 |
6 |
p. 908-913
|
artikel
|
| 2 |
Different types of avalanche-induced moving current filaments under the influence of doping inhomogeneities
|
Milady, S.
|
|
|
39 |
6 |
p. 857-867
|
artikel
|
| 3 |
Dynamic avalanche in diodes with local lifetime control by means of palladium
|
Vobecký, J.
|
|
|
39 |
6 |
p. 878-883
|
artikel
|
| 4 |
Editorial board
|
|
|
|
39 |
6 |
p. i
|
artikel
|
| 5 |
Monitoring of carrier lifetime distribution in high power semiconductor device technology
|
Kozisek, J.
|
|
|
39 |
6 |
p. 884-889
|
artikel
|
| 6 |
Optimisation of the number of IGBT devices in a series–parallel string
|
Shammas, Noel Y.A.
|
|
|
39 |
6 |
p. 899-907
|
artikel
|
| 7 |
Power semiconductor devices and integrated circuits
|
Benda, Vitezslav
|
|
|
39 |
6 |
p. 849-850
|
artikel
|
| 8 |
Reliability of reverse properties of power semiconductor devices:
|
Papež, V.
|
|
|
39 |
6 |
p. 851-856
|
artikel
|
| 9 |
Ruggedness analysis of 3.3kV high voltage diodes considering various buffer structures and edge terminations
|
Heinze, B.
|
|
|
39 |
6 |
p. 868-877
|
artikel
|
| 10 |
Superjunction LDMOS on thick-SOI technology for RF applications
|
Cortés, I.
|
|
|
39 |
6 |
p. 922-927
|
artikel
|
| 11 |
Switching performance of 65V vertical N-channel FLYMOSFETs
|
Théolier, L.
|
|
|
39 |
6 |
p. 914-921
|
artikel
|
| 12 |
Theoretical study about the RBSOA of a monolithic ESBT® (emitter-switched bipolar transistor) versus the saturation level before the switching-off
|
Enea, V.
|
|
|
39 |
6 |
p. 890-898
|
artikel
|
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