| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A cost-effective flexible MEMS technique for temperature sensing
|
Xiao, Suyan
|
|
|
38 |
3 |
p. 360-364
|
artikel
|
| 2 |
An analytical drain current model for graded channel cylindrical/surrounding gate MOSFET
|
Kaur, Harsupreet
|
|
|
38 |
3 |
p. 352-359
|
artikel
|
| 3 |
An in situ technique to measure gold resistance oscillations during the first stages of growth
|
Alonzo-Medina, G.M.
|
|
|
38 |
3 |
p. 388-391
|
artikel
|
| 4 |
A novel all-plastic diode based upon pure polyaniline material
|
Zhao, Chun
|
|
|
38 |
3 |
p. 316-320
|
artikel
|
| 5 |
A novel proposal for ultra-high optical nonlinearity in GaN/AlGaN spherical centered defect quantum dot (SCDQD)
|
Rostami, A.
|
|
|
38 |
3 |
p. 342-351
|
artikel
|
| 6 |
Bias-tunable electron–spin polarization in an antiparallel double δ -magnetic-barrier nanostructure
|
Lu, Mao-Wang
|
|
|
38 |
3 |
p. 401-405
|
artikel
|
| 7 |
CMOS RF class-D power amplifier with bandpass sigma–delta modulation
|
Johnson, Thomas
|
|
|
38 |
3 |
p. 439-446
|
artikel
|
| 8 |
Comparison of photoexcited energy transfer in the organic double-layer and multilayer quantum well structures
|
Zhao, D.W.
|
|
|
38 |
3 |
p. 422-425
|
artikel
|
| 9 |
Crystal growth of Hg1− x Mn x Se for infrared detection
|
Reig, C.
|
|
|
38 |
3 |
p. 327-331
|
artikel
|
| 10 |
Design and fabrication of a vibration sensor using a conductive ball
|
Cho, Yong-Soo
|
|
|
38 |
3 |
p. 416-421
|
artikel
|
| 11 |
Design and simulation of a nanoelectronic single electron 2–4 decoder using a novel simulator
|
Zardalidis, George T.
|
|
|
38 |
3 |
p. 381-387
|
artikel
|
| 12 |
Determination of boron concentration in heavily doped p-type Si1− x Ge x /Si heterostructure by infrared ellipsometric spectroscopy
|
Chen, Changchun
|
|
|
38 |
3 |
p. 392-397
|
artikel
|
| 13 |
Distortion of pulsed signals in carbon nanotube interconnects
|
Shi, Xiaomeng
|
|
|
38 |
3 |
p. 365-370
|
artikel
|
| 14 |
Editorial board
|
|
|
|
38 |
3 |
p. i
|
artikel
|
| 15 |
Effect of In content of the buffer layer on crystalline quality and electrical property of In0.82Ga0.18As/InP grown by LP-MOCVD
|
Zhang, Tiemin
|
|
|
38 |
3 |
p. 398-400
|
artikel
|
| 16 |
Fabrication of low-loss thin film microstrip line on low-resistivity silicon for RF applications
|
Wu, Hung-Wei
|
|
|
38 |
3 |
p. 304-309
|
artikel
|
| 17 |
Harmonic distortion analysis using an improved charge sheet model for PD SOI MOSFETs
|
Alvarado, Joaquín
|
|
|
38 |
3 |
p. 321-326
|
artikel
|
| 18 |
Manufacturing and full characterization of silicon carbide-based multi-sensor micro-probes for biomedical applications
|
Gabriel, Gemma
|
|
|
38 |
3 |
p. 406-415
|
artikel
|
| 19 |
Mechanical behavior of mismatch strain-driven microcantilever
|
Kim, Sang-Hyun
|
|
|
38 |
3 |
p. 371-380
|
artikel
|
| 20 |
Miniature SAW device using MEMS technology
|
Zaki, Amal
|
|
|
38 |
3 |
p. 426-429
|
artikel
|
| 21 |
Multiband k · p Riccati equation for electronic structure and transport in type-II heterostructures
|
Botha, A.E.
|
|
|
38 |
3 |
p. 332-341
|
artikel
|
| 22 |
Parameter-dependent third-order nonlinear susceptibility of parabolic InGaN/GaN quantum dots
|
Gui, Zhouqi
|
|
|
38 |
3 |
p. 447-451
|
artikel
|
| 23 |
Properties of ZnO/Cu/ZnO multilayer films deposited by simultaneous RF and DC magnetron sputtering at different substrate temperatures
|
Sahu, D.R.
|
|
|
38 |
3 |
p. 299-303
|
artikel
|
| 24 |
Reconfigurable approximate pattern matching architectures for nanotechnology
|
Annampedu, Viswanath
|
|
|
38 |
3 |
p. 430-438
|
artikel
|
| 25 |
The study of δ-doped InGaP/InGaAs/GaAs pseudomorphic high electron mobility transistor
|
Lin, Jia-Chuan
|
|
|
38 |
3 |
p. 310-315
|
artikel
|
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