nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Bulk micromachining of silicon in TMAH-based etchants for aluminum passivation and smooth surface
|
Biswas, K. |
|
|
37 |
4 |
p. 321-327 |
artikel |
2 |
Characterisation of electroplated Sn/Ag solder bumps
|
Bigas, M. |
|
|
37 |
4 |
p. 308-316 |
artikel |
3 |
Chemical mechanical polishing of polymeric materials for MEMS applications
|
Zhong, Z.W. |
|
|
37 |
4 |
p. 295-301 |
artikel |
4 |
Circuit models for quasi-3D spice simulation of turn-on transients in four-layer power bipolar devices
|
Quintero, R. |
|
|
37 |
4 |
p. 371-382 |
artikel |
5 |
Czochralski-grown nitrogen-doped silicon: Electrical properties of MOS structures; A positron annihilation study
|
Harmatha, L. |
|
|
37 |
4 |
p. 283-289 |
artikel |
6 |
Design and analysis of a novel tunable optical filter
|
Eliahou-Niv, S. |
|
|
37 |
4 |
p. 302-307 |
artikel |
7 |
Feasible approach to the fabrication of asymmetric Schottky barrier MOSFETs by using the spacer technique
|
Sun, L. |
|
|
37 |
4 |
p. 332-335 |
artikel |
8 |
GaN MSM photodetectors with photo-CVD annealed Ni/Au electrodes
|
Jhou, Y.D. |
|
|
37 |
4 |
p. 328-331 |
artikel |
9 |
Impact of technology scaling and process variations on RF CMOS devices
|
Hassan, Hassan |
|
|
37 |
4 |
p. 275-282 |
artikel |
10 |
Modeling and gradient pattern analysis of irregular SFM structures of porous silicon
|
Baroni, M.P.M.A. |
|
|
37 |
4 |
p. 290-294 |
artikel |
11 |
Modeling and simulation development of electron beam resist based on cellular automata
|
Ling, Li |
|
|
37 |
4 |
p. 317-320 |
artikel |
12 |
On self-healing digital system design
|
Lala, P.K. |
|
|
37 |
4 |
p. 353-362 |
artikel |
13 |
Realisation of ‘Solar Blind’ AlGaN Photodetectors: Measured and calculated spectral response
|
Touzi, C. |
|
|
37 |
4 |
p. 336-339 |
artikel |
14 |
Simultaneous estimation of heat transfer coefficient and thermal conductivity with application to microelectronic materials
|
Zawada, Tomasz |
|
|
37 |
4 |
p. 340-352 |
artikel |
15 |
Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates
|
Sghaier, N. |
|
|
37 |
4 |
p. 363-370 |
artikel |