| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Bulk micromachining of silicon in TMAH-based etchants for aluminum passivation and smooth surface
|
Biswas, K.
|
|
|
37 |
4 |
p. 321-327
|
artikel
|
| 2 |
Characterisation of electroplated Sn/Ag solder bumps
|
Bigas, M.
|
|
|
37 |
4 |
p. 308-316
|
artikel
|
| 3 |
Chemical mechanical polishing of polymeric materials for MEMS applications
|
Zhong, Z.W.
|
|
|
37 |
4 |
p. 295-301
|
artikel
|
| 4 |
Circuit models for quasi-3D spice simulation of turn-on transients in four-layer power bipolar devices
|
Quintero, R.
|
|
|
37 |
4 |
p. 371-382
|
artikel
|
| 5 |
Czochralski-grown nitrogen-doped silicon: Electrical properties of MOS structures; A positron annihilation study
|
Harmatha, L.
|
|
|
37 |
4 |
p. 283-289
|
artikel
|
| 6 |
Design and analysis of a novel tunable optical filter
|
Eliahou-Niv, S.
|
|
|
37 |
4 |
p. 302-307
|
artikel
|
| 7 |
Feasible approach to the fabrication of asymmetric Schottky barrier MOSFETs by using the spacer technique
|
Sun, L.
|
|
|
37 |
4 |
p. 332-335
|
artikel
|
| 8 |
GaN MSM photodetectors with photo-CVD annealed Ni/Au electrodes
|
Jhou, Y.D.
|
|
|
37 |
4 |
p. 328-331
|
artikel
|
| 9 |
Impact of technology scaling and process variations on RF CMOS devices
|
Hassan, Hassan
|
|
|
37 |
4 |
p. 275-282
|
artikel
|
| 10 |
Modeling and gradient pattern analysis of irregular SFM structures of porous silicon
|
Baroni, M.P.M.A.
|
|
|
37 |
4 |
p. 290-294
|
artikel
|
| 11 |
Modeling and simulation development of electron beam resist based on cellular automata
|
Ling, Li
|
|
|
37 |
4 |
p. 317-320
|
artikel
|
| 12 |
On self-healing digital system design
|
Lala, P.K.
|
|
|
37 |
4 |
p. 353-362
|
artikel
|
| 13 |
Realisation of ‘Solar Blind’ AlGaN Photodetectors: Measured and calculated spectral response
|
Touzi, C.
|
|
|
37 |
4 |
p. 336-339
|
artikel
|
| 14 |
Simultaneous estimation of heat transfer coefficient and thermal conductivity with application to microelectronic materials
|
Zawada, Tomasz
|
|
|
37 |
4 |
p. 340-352
|
artikel
|
| 15 |
Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates
|
Sghaier, N.
|
|
|
37 |
4 |
p. 363-370
|
artikel
|
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