| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of DC characteristics of GaAs double heterojunction bipolar transistors (DHBTs) with a pseudomorphic GaAsSb base
|
Tian, Yuan
|
|
|
37 |
1 |
p. 38-43
|
artikel
|
| 2 |
CMOS compatible bulk micromachined silicon piezoresistive accelerometer with low off-axis sensitivity
|
Kal, S.
|
|
|
37 |
1 |
p. 22-30
|
artikel
|
| 3 |
CMOS planar spiral inductor modeling and low noise amplifier design
|
Telli, A.
|
|
|
37 |
1 |
p. 71-78
|
artikel
|
| 4 |
Design of a tunable frequency CMOS fully differential fourth-order Chebyshev filter
|
Jiang, Jinguang
|
|
|
37 |
1 |
p. 84-90
|
artikel
|
| 5 |
Diaphragm design guidelines and an optical pressure sensor based on MEMS technique
|
Wang, Xiaodong
|
|
|
37 |
1 |
p. 50-56
|
artikel
|
| 6 |
Electronic conductance in binomially tailored quantum wire
|
Ashour, H.S.
|
|
|
37 |
1 |
p. 79-83
|
artikel
|
| 7 |
Gain improvement in operational transconductance amplifiers using Graded-Channel SOI nMOSFETS
|
Gimenez, Salvador Pinillos
|
|
|
37 |
1 |
p. 31-37
|
artikel
|
| 8 |
High quality silicon nitride deposited by Ar/N2/H2/SiH4 high-density and low energy plasma at low temperature
|
Zhong, Chuan Jie
|
|
|
37 |
1 |
p. 44-49
|
artikel
|
| 9 |
Luminescent properties of Be x Cd1−x Se thin films
|
Maksimov, O.
|
|
|
37 |
1 |
p. 19-21
|
artikel
|
| 10 |
Optical properties of (001) GaN/AlN quantum wells
|
Rodríguez-Coppola, H.
|
|
|
37 |
1 |
p. 12-18
|
artikel
|
| 11 |
Photoluminescence of V-doped GaN thin films grown by MOVPE technique
|
Souissi, M.
|
|
|
37 |
1 |
p. 1-4
|
artikel
|
| 12 |
Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices
|
Szekeres, A.
|
|
|
37 |
1 |
p. 64-70
|
artikel
|
| 13 |
Reinforcement of a PDMS master using an oxide-coated silicon plate
|
Luo, Cheng
|
|
|
37 |
1 |
p. 5-11
|
artikel
|
| 14 |
Two-dimensional optical mask design and atom lithography
|
Rostami, A.
|
|
|
37 |
1 |
p. 57-63
|
artikel
|
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