nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
An analytical 2D model for drain-induced barrier lowering in subquarter micrometer gate length InAlAs/InGaAs/InAlAs/InP LMHEMT
|
Jogi, Jyotika |
|
|
33 |
8 |
p. 633-638 |
artikel |
2 |
Characterization of interface degradation in deep submicron MOSFETs by gate-controlled-diode measurement
|
Huang, J |
|
|
33 |
8 |
p. 639-643 |
artikel |
3 |
Effect of different etching processes on edge breakdown suppression for planar InP/InGaAs avalanche photodiodes
|
Lee, Bongyong |
|
|
33 |
8 |
p. 645-649 |
artikel |
4 |
High-voltage solutions in CMOS technology
|
Santos, P.M |
|
|
33 |
8 |
p. 609-617 |
artikel |
5 |
Neural network based modeling of diffusion process for high-speed avalanche photodiodes fabrication
|
Ko, Young-Don |
|
|
33 |
8 |
p. 675-680 |
artikel |
6 |
Novel method of low-vacuum plasma triode sputtering
|
Golan, G |
|
|
33 |
8 |
p. 651-657 |
artikel |
7 |
Optimization of a 0.6μm, single polysilicon emitter bipolar technology versus narrow emitter effects
|
Ullán, M |
|
|
33 |
8 |
p. 659-665 |
artikel |
8 |
Patents alert 33/7
|
|
|
|
33 |
8 |
p. 683-686 |
artikel |
9 |
Principles of Electronic Materials and Devices (Second Edition)
|
Henini, M |
|
|
33 |
8 |
p. 681 |
artikel |
10 |
RETRACTED: Normalized mutual integral difference operator: a novel experimental method for extracting threshold voltage of MOSFETs
|
He, Jin |
|
|
33 |
8 |
p. 667-670 |
artikel |
11 |
Thermal model of thin film anemometer
|
Giani, A. |
|
|
33 |
8 |
p. 619-625 |
artikel |
12 |
Thickness dependent soft-breakdown phenomena of low dielectric constant thin films and corresponding activation energy
|
Lee, Shih-Wei |
|
|
33 |
8 |
p. 605-608 |
artikel |
13 |
Validation of a novel dielectric constant simulation model and the determination of its physical parameters
|
Todd, Michael G |
|
|
33 |
8 |
p. 627-632 |
artikel |
14 |
Weak light effect in multicrystalline silicon solar cells
|
Wang, He |
|
|
33 |
8 |
p. 671-674 |
artikel |