| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Acoustic Signal Processing for Telecommunication
|
Saidane, A
|
|
|
32 |
2 |
p. 178
|
artikel
|
| 2 |
A design based on proven concepts of an SEU-immune CMOS configuration data cell for reprogrammable FPGAs
|
Rockett, L.R.
|
|
|
32 |
2 |
p. 99-111
|
artikel
|
| 3 |
A finite element simulator for three-dimensional analysis of interconnect structures
|
Sabelka, R
|
|
|
32 |
2 |
p. 163-171
|
artikel
|
| 4 |
A hardware mid-value select voter architecture
|
Stojcev, M.K.
|
|
|
32 |
2 |
p. 149-162
|
artikel
|
| 5 |
An investigation into the mechanisms limiting the safe operating area of a LIGBT in DI and DELDI technologies
|
Hardikar, S
|
|
|
32 |
2 |
p. 121-126
|
artikel
|
| 6 |
A single-electron XOR gate
|
Dasigenis, M.M
|
|
|
32 |
2 |
p. 117-119
|
artikel
|
| 7 |
Copper — Fundamental Mechanisms for Microelectronic Applications
|
Saidane, A
|
|
|
32 |
2 |
p. 179
|
artikel
|
| 8 |
Development of screen-printed polymer thick film planner transformer using Mn–Zn ferrite as core material
|
Arshak, K.I.
|
|
|
32 |
2 |
p. 113-116
|
artikel
|
| 9 |
Flicker noise modelling of small geometry LDD MOSFETs
|
Kalra, E.
|
|
|
32 |
2 |
p. 143-147
|
artikel
|
| 10 |
Handbook of Semiconductor Manufacturing Technology
|
Henini, M
|
|
|
32 |
2 |
p. 180
|
artikel
|
| 11 |
Heavily silicon-doped GaN by MOVPE
|
Halidou, I
|
|
|
32 |
2 |
p. 137-142
|
artikel
|
| 12 |
Modelling of vacuum-silicon solid microwave diodes and triodes based on P++–N and on tungsten cathodes
|
Koshevaya, S.V
|
|
|
32 |
2 |
p. 133-136
|
artikel
|
| 13 |
The Blue Laser Diode: The Complete Story (2nd and extended edition)
|
Henini, M
|
|
|
32 |
2 |
p. 177
|
artikel
|
| 14 |
The influence of doping density on short channel effects immunity in deep sub-micron grooved-gate PMOSFETs
|
Ren, Hongxia
|
|
|
32 |
2 |
p. 127-132
|
artikel
|
| 15 |
Vacuum-silicon solid microwave diodes and triodes based on P++–N and on tungsten cathodes
|
Koshevaya, S.V
|
|
|
32 |
2 |
p. 173-175
|
artikel
|
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