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Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 11 of 15 found articles
| Title: |
Heavily silicon-doped GaN by MOVPE |
| Author: |
Halidou, I Benzarti, Z Chine, Z Boufaden, T El Jani, B |
| Appeared in: |
Microelectronics journal |
| Paging: | Volume 32 () nr. 2 pages 137-142 |
| Year: |
2001 |
| Contents: | |
| Publisher: |
Elsevier Science Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 11 of 15 found articles
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