| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A study of the Au/Pd interface formation using the elastic peak electron spectroscopy method
|
Gruzza, B.
|
|
|
30 |
7 |
p. 625-629
|
artikel
|
| 2 |
Characterisation of semiconductor heterostructures by capacitance methods
|
Palmer, D.W
|
|
|
30 |
7 |
p. 665-672
|
artikel
|
| 3 |
Characterization of the M.S structure by the surface photoelectrical voltage method
|
Benamara, Z
|
|
|
30 |
7 |
p. 659-664
|
artikel
|
| 4 |
C(V) characterization of metal/polysilicon/oxide/monosilicon structure
|
Dib, H
|
|
|
30 |
7 |
p. 679-683
|
artikel
|
| 5 |
Effect of lateral diffusion on the photoluminescence intensity of semiconductor compounds: study of theoretical three-dimensional photoluminescence
|
Benbakhti, T.
|
|
|
30 |
7 |
p. 643-649
|
artikel
|
| 6 |
Electrical characterization of the Au/InP(100) and Au/InSb/InP(100) structures
|
Akkal, B.
|
|
|
30 |
7 |
p. 673-678
|
artikel
|
| 7 |
Investigation of two-dimensional electron gas concentration in selectively doped n-Al x Ga1−x As/In y Ga1−yAs/GaAs heterostructures
|
Bouzaı̈ene, L.
|
|
|
30 |
7 |
p. 705-709
|
artikel
|
| 8 |
Optical properties of (In,Ga)As/GaAs heterostructures grown on conventional (100) and (111)B GaAs substrates
|
Disseix, P.
|
|
|
30 |
7 |
p. 689-693
|
artikel
|
| 9 |
Optical properties of type II short-period GaAs/AlAs superlattices under stress effects
|
Smaoui, F.
|
|
|
30 |
7 |
p. 631-636
|
artikel
|
| 10 |
Porous silicon: photoluminescence decay in the nanosecond range
|
M’ghaı̈eth, R
|
|
|
30 |
7 |
p. 695-698
|
artikel
|
| 11 |
Residual strain mapping in III–V materials by spectrally resolved scanning photoluminescence
|
Buchheit, M.
|
|
|
30 |
7 |
p. 651-657
|
artikel
|
| 12 |
Self-organized growth, ripening, and optical properties of uncapped InP/GaP (100) islands
|
Borgi, K.
|
|
|
30 |
7 |
p. 637-641
|
artikel
|
| 13 |
Structural and mechanical characterization of in-situ phosphorus-doped rapid transport low pressure chemical vapor deposition polycrystalline silicon films
|
Kallel, S.
|
|
|
30 |
7 |
p. 699-703
|
artikel
|
| 14 |
Temperature range for re-emission of carriers in GaAs/Ga1−x Al x As superlattices
|
Kraiem, S.
|
|
|
30 |
7 |
p. 685-688
|
artikel
|
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