| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A dual-gate shorted-anode silicon-on-insulator lateral insulated gate bipolar transistor with floating ohmic contact for suppressing snapback and fast switching characteristics
|
Oh, J.K
|
|
|
30 |
6 |
p. 577-581
|
artikel
|
| 2 |
A lumped-charge model for gate turn-off thyristors suitable for circuit simulation
|
Iannuzzo, F
|
|
|
30 |
6 |
p. 543-550
|
artikel
|
| 3 |
A new generation of fast-switching thyristors
|
Park, J.M
|
|
|
30 |
6 |
p. 535-541
|
artikel
|
| 4 |
A new lateral power MOSFET for smart power ICs: the “LUDMOS concept”
|
Zitouni, M
|
|
|
30 |
6 |
p. 551-561
|
artikel
|
| 5 |
A new self-firing MOS-thyristor device: optimization of the turn-off performance and experimental results
|
Breil, M.
|
|
|
30 |
6 |
p. 599-610
|
artikel
|
| 6 |
Design considerations of the diode effective area with regard to the reverse recovery performance
|
Rahimo, M.T.
|
|
|
30 |
6 |
p. 499-503
|
artikel
|
| 7 |
Double gate MOS-thyristor devices with and without forward bias safe operating area capability: the insulated base MOS-controlled thyristor and the dual MOS-gated thyristor
|
Flores, D
|
|
|
30 |
6 |
p. 591-597
|
artikel
|
| 8 |
Experimental and simulation results on the switching behaviour of lateral insulated gate bipolar transistor structures
|
Vellvehı́, M.
|
|
|
30 |
6 |
p. 583-589
|
artikel
|
| 9 |
Fast power rectifier design using local lifetime and emitter efficiency control techniques
|
Napoli, Ettore
|
|
|
30 |
6 |
p. 505-512
|
artikel
|
| 10 |
Open circuit voltage decay lifetime of ion irradiated devices
|
Vobecký, J.
|
|
|
30 |
6 |
p. 513-520
|
artikel
|
| 11 |
Patent report
|
|
|
|
30 |
6 |
p. 611-623
|
artikel
|
| 12 |
Rare earth doped high barrier height Schottky devices
|
Chang, L.B
|
|
|
30 |
6 |
p. 521-526
|
artikel
|
| 13 |
The numerical modelling of silicon carbide high power semiconductor devices
|
Elford, A.
|
|
|
30 |
6 |
p. 527-534
|
artikel
|
| 14 |
The quest for the perfect switch
|
Benda, Viteszlav
|
|
|
30 |
6 |
p. 497-498
|
artikel
|
| 15 |
The separated shorted-anode insulated gate bipolar transistor with the suppressed negative differential resistance regime
|
Byeon, D.S
|
|
|
30 |
6 |
p. 571-575
|
artikel
|
| 16 |
Turn-off losses estimation for charge injection controlled non-punch through IGBTs
|
Lefebvre, S
|
|
|
30 |
6 |
p. 563-569
|
artikel
|
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