| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Adaptive analog VLSI neural systems
|
Picton, P.D.
|
|
|
28 |
1 |
p. 103-104
|
artikel
|
| 2 |
Advance circuits facilities in Minnesota receive ISO 9002 certification
|
|
|
|
28 |
1 |
p. iii
|
artikel
|
| 3 |
A study of static RAM cell using the lambda bipolar transistor (LBT)
|
Sarkar, Manju
|
|
|
28 |
1 |
p. 65-72
|
artikel
|
| 4 |
Character recognition using Fourier descriptors and a new form of dynamic semisupervised neural network
|
Morns, Ian P.
|
|
|
28 |
1 |
p. 73-84
|
artikel
|
| 5 |
Dispensing answers the call: Speed, accuracy, and flexibility meet PCB assembly needs
|
Prentice, Thomas
|
|
|
28 |
1 |
p. vii-xi
|
artikel
|
| 6 |
Dynamic model of silicon devices with energy-localized trap centers
|
Valdinoci, M.
|
|
|
28 |
1 |
p. 93-100
|
artikel
|
| 7 |
Editorial
|
Szweda, Roy
|
|
|
28 |
1 |
p. III
|
artikel
|
| 8 |
Editorial Board
|
|
|
|
28 |
1 |
p. II
|
artikel
|
| 9 |
Electronically-tunable polysilicon-MOS resistors
|
Wilson, G.
|
|
|
28 |
1 |
p. 23-27
|
artikel
|
| 10 |
ESD in silicon integrated circuits
|
Hurst, S.L.
|
|
|
28 |
1 |
p. 102-103
|
artikel
|
| 11 |
Field programmable gate arrays
|
Hurst, S.L.
|
|
|
28 |
1 |
p. 102
|
artikel
|
| 12 |
Fourier transforms: An introduction for engineers
|
Harris, M.S.
|
|
|
28 |
1 |
p. 104
|
artikel
|
| 13 |
FPGAs achieve superior speed and density with antifuse advancements
|
Graf, Al
|
|
|
28 |
1 |
p. xxi-xxiv
|
artikel
|
| 14 |
Free-standing submicrometre filament crystals of Si and Ge x Si1 − x
|
Klimovskaya, A.I.
|
|
|
28 |
1 |
p. 13-22
|
artikel
|
| 15 |
Fujitsu introduces the CE56 series 0.5 μm CMOS embedded sea-of-gates array ASIC
|
|
|
|
28 |
1 |
p. xii
|
artikel
|
| 16 |
IEDM 1996 highlights
|
|
|
|
28 |
1 |
p. iv-vi
|
artikel
|
| 17 |
III-V Quantum system research
|
Henini, M.
|
|
|
28 |
1 |
p. 101
|
artikel
|
| 18 |
Ionization equipment orders from disk drive manufacturers exceed $1,000,000
|
|
|
|
28 |
1 |
p. iii
|
artikel
|
| 19 |
Logic and architecture synthesis: State-of-the-art and novel approaches
|
Hurst, S.L.
|
|
|
28 |
1 |
p. 104-105
|
artikel
|
| 20 |
Modelling of high-injection effects in bipolar devices
|
Rinaldi, Niccolò
|
|
|
28 |
1 |
p. 55-63
|
artikel
|
| 21 |
Modelling of resolution enhancement processes in lithography
|
Arshak, K.I.
|
|
|
28 |
1 |
p. 41-47
|
artikel
|
| 22 |
Newly formed subsidiary to expand software resources
|
|
|
|
28 |
1 |
p. iii
|
artikel
|
| 23 |
New Tencor HRP-200 high resolution profiler meets surface planarity challenges posed by submicron features and complex processes such as metal CMP
|
|
|
|
28 |
1 |
p. ii
|
artikel
|
| 24 |
OTA-based evenphase sinusoidal oscillators
|
Hou, Chun-Li
|
|
|
28 |
1 |
p. 49-54
|
artikel
|
| 25 |
Physics of optoelectronic devices
|
Henini, M.
|
|
|
28 |
1 |
p. 101-102
|
artikel
|
| 26 |
Power electronics converters, applications and design
|
Robinson, F.V.P.
|
|
|
28 |
1 |
p. 105-106
|
artikel
|
| 27 |
Relation between the leakage currents and the defects created in the oxide and at the interface in a short channel NMOS transistor
|
Bouhdada, A.
|
|
|
28 |
1 |
p. 85-91
|
artikel
|
| 28 |
Semifab orders for Taiwanese factory
|
|
|
|
28 |
1 |
p. iii
|
artikel
|
| 29 |
Siemens applies IC technology to discrete capacitors
|
|
|
|
28 |
1 |
p. i
|
artikel
|
| 30 |
Siemens selects sub-0.5 μm tools to support 20,000 wafers per month at new production line beginning in February 1997
|
|
|
|
28 |
1 |
p. ii
|
artikel
|
| 31 |
Sixteen microwave downstream single wafer ashers included in combined orders
|
|
|
|
28 |
1 |
p. ii-iii
|
artikel
|
| 32 |
Thermal interface material performance in microelectronics packaging applications
|
Lee, Seri
|
|
|
28 |
1 |
p. xiii-xx
|
artikel
|
| 33 |
The trench Insulated Gate Bipolar Transistor— a high power switching device
|
Udrea, Florin
|
|
|
28 |
1 |
p. 1-12
|
artikel
|
| 34 |
Universal TSC module and its application to the design of TSC circuits
|
Pagey, S.
|
|
|
28 |
1 |
p. 29-39
|
artikel
|
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